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    2SC4525 Search Results

    2SC4525 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SC4525 Mitsubishi NPN EPITAXIAL PLANAR TYPE Scan PDF
    2SC4525 Mitsubishi MITSUBISHI RF POWER TRANSISTOR Scan PDF
    2SC4525 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC4525 Unknown High Frequency Device Data Book (Japanese) Scan PDF

    2SC4525 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C42V5964

    Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
    Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION


    Original     		PDF M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776

    2SC4525

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC4525 NPN EPITAXIAL PLANAR TYPE D IS C R E T IO N 2SC4525 is a silicon NPN epitaxial planar type transistor specifically designed fo r RF power amplifiers applications in 1,65GHz. FEATURES • High power gain: Gpb ^ 6.0dB, P0 = 20W


    OCR Scan     		PDF 2SC4525 65GHz. 65GHz X-139

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC4525 NPN EPITAXIAL PLANAR T Y P E D IS C R E T IO N 2 S C 45 2 5 is a silicon N P N epitaxial planar type transistor sp e cifica lly designed fo r R F power am plifiers applications in 1 .65 G H z. FEATURES • High power gain: G p b ^ 6.0dB , P0 = 20W


    OCR Scan     		PDF 2SC4525

    2sc4525

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC4525 NPN EPITAXIAL PLANAR TYPE D IS C R E T IO N 2 S C 4 5 2 5 is a silicon N P N epitaxial planar type transistor specifically designed for R F power amplifiers applications in 1.65G H z. FEATURES • • High power gain: G p b ^ 6.0dB, P0 = 2 0W


    OCR Scan     		PDF 2SC4525 2SC4525

    transistor D 2331

    Abstract: 2331 TRANSISTOR T31B
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC4838 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC4838 is a silicon NPN epitaxial planar type transistor OUTLINE DRAWING Dimension in mm specifically designed fo r RF power amplifiers in 1.65GHz. 4 + 0.5 C1.5MAX C1.5MAX FEATURES


    OCR Scan     		PDF 2SC4838 2SC4838 65GHz. 65GHz, transistor D 2331 2331 TRANSISTOR T31B

    2SC4515

    Abstract: 2SC4536 2SC4561 2SC4550 c455 2SC4516 2SC4519 2SC4520 2SC4521 2SC4523
    Text: - 206 - m X Ë f à <Ta=25,C 1*EPÍ¿Tc=25'C 2SC4515 föT HF LN A n VcBO Vc e o IcCDO Pc Pc* V) (V) (A) (W) (W) 15 10 0.05 "(max) (/¿A) 0.2 VcB (V) 1 10 % (min) ft 4# (max) iê (Ta=25<C ) (max) (V) ic/ÏE (A) Vc e (V) [*EP(atypffi] 50 300 8 0.01 (max) (V)


    OCR Scan     		PDF 2SC4515 2SC4516 2SC4519 2SC4520 2SC4521 2SC4522 2SC4523 2SC4524 2SC4547 SC-62 2SC4515 2SC4536 2SC4561 2SC4550 c455 2SC4519 2SC4520 2SC4521 2SC4523

    HPA C band

    Abstract: No abstract text available
    Text: • 15V Series for C A TV /M A T V Amplifiers <Tc = 25’C> Max. ratines Type No. Application HPA 2SC1324 Structur# Si,NPN,EP > fa {A} Pc W 35 4.0 0.15 3 A + 175 (ài (min) .{Hh-c leao w UA) Sf f (MHz) •c (mA) dB 50 50 15 770 0.03 9 Wm Package outline


    OCR Scan     		PDF 2SC1324 z/400M 2SC2055 2SC3017 2SC20S6 2SC3018 2SC300I 2SC3404 2SC3103 2SC3104 HPA C band

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC4838 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC4838 is a silicon NPN epitaxial planar type transistor OUTLINE DRAWING Dimension in mm specifically designed -for RF power amplifiers in 1,65GHz. FEATURES High power gain : Gpb S 9.3dB, Po fe 6W


    OCR Scan     		PDF 2SC4838 2SC4838 65GHz. 65GHz, 2SC4525

    TE 2556

    Abstract: T31B 2SC4526 2SC4525 2SC4838 286j
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC4838 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2S C 4838 is a silicon NPN epitaxial planar typ e transistor Dimension in mm specifically designed fo r RF pow er am plifiers in 1.65GHz. FEATURES • High pow er gain : Gob £ 9.3dB, Po 6 6W


    OCR Scan     		PDF 2SC4838 2SC4838 65GHz. 65GHz, 2SC4525 2SC4526 2SC4526 TE 2556 T31B 2SC4525 286j

    2sc4526 mitsubishi

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC4526 NPN EPITAXIAL PLANAR T Y P E D IS C R IP T IO N O U T L IN E D R A W IN G 2SC 4526 is a silicon NPN epitaxial planar type transistor specifically designed for R F power amplifier applications in 1.65GHz. D im e n sio n s in m m


    OCR Scan     		PDF 2SC4526 2SC4526 65GHz. 65GHz, 2SC4525 2sc4526 mitsubishi