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    2SC3858 TRANSISTOR Search Results

    2SC3858 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2SC3858 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 2sa1494

    Abstract: TRANSISTOR 2sc3858 2sc3858 transistor 2SC3858 2sa1494 data sheet transistor 2sc3858 transistor pnp 12v 1a 2SC3858 2SA1494
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1494 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -200V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3858 APPLICATIONS ·For audio and general purpose applications


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    PDF 2SA1494 -200V 2SC3858 -200V transistor 2sa1494 TRANSISTOR 2sc3858 2sc3858 transistor 2SC3858 2sa1494 data sheet transistor 2sc3858 transistor pnp 12v 1a 2SC3858 2SA1494

    2sc3858

    Abstract: 2SC3858 2SA1494 characteristics 2SC3858 2SA1494
    Text: SavantIC Semiconductor Product Specification 2SC3858 Silicon NPN Power Transistors DESCRIPTION •With MT-200 package ·Complement to type 2SA1494 APPLICATIONS ·Audio and general purpose PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base


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    PDF 2SC3858 MT-200 2SA1494 MT-200) 2sc3858 2SC3858 2SA1494 characteristics 2SC3858 2SA1494

    2SA1494

    Abstract: transistor 2sc3858 transistor pnp VCEO 12V Ic 1A 2SC3858 data sheet transistor 2sc3858 2SA1494 equivalent 2sc3858 transistor characteristics 2SC3858 transistor 2sa1494
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1494 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -200V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3858 APPLICATIONS ·For audio and general purpose applications


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    PDF 2SA1494 -200V 2SC3858 -200V 2SA1494 transistor 2sc3858 transistor pnp VCEO 12V Ic 1A 2SC3858 data sheet transistor 2sc3858 2SA1494 equivalent 2sc3858 transistor characteristics 2SC3858 transistor 2sa1494

    2SC3858

    Abstract: 2SA1494 2SC3858 2SA1494
    Text: www.jmnic.com Product Specification 2SC3858 Silicon NPN Power Transistors ・ DESCRIPTION ・With MT-200 package ・Complement to type 2SA1494 APPLICATIONS ・Audio and general purpose PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base


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    PDF 2SC3858 MT-200 2SA1494 MT-200) 2SC3858 2SA1494 2SC3858 2SA1494

    2SC3858

    Abstract: 2SC3858 2SA1494 2sa1494 characteristics 2SC3858 PACKAGE MT-200 MT200 package
    Text: Inchange Semiconductor Product Specification 2SC3858 Silicon NPN Power Transistors ・ DESCRIPTION ・With MT-200 package ・Complement to type 2SA1494 APPLICATIONS ・Audio and general purpose PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Collector;connected to


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    PDF 2SC3858 MT-200 2SA1494 MT-200) 2SC3858 2SC3858 2SA1494 2sa1494 characteristics 2SC3858 PACKAGE MT-200 MT200 package

    2SA1494

    Abstract: 2SC3858 200v 4A pnp RL4A 2SC3858 2SA1494
    Text: SavantIC Semiconductor Product Specification 2SA1494 Silicon PNP Power Transistors DESCRIPTION •With MT-200 package ·Complement to type 2SC3858 · APPLICATIONS ·Audio and general purpose PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Collector;connected to


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    PDF 2SA1494 MT-200 2SC3858 MT-200) 2SA1494 2SC3858 200v 4A pnp RL4A 2SC3858 2SA1494

    2SA1494

    Abstract: 2SC3858 characteristics 2SC3858 2SA1494 equivalent MT200 package
    Text: JMnic Product Specification 2SA1494 Silicon PNP Power Transistors ・ DESCRIPTION ・With MT-200 package ・Complement to type 2SC3858 APPLICATIONS ・Audio and general purpose PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base


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    PDF 2SA1494 MT-200 2SC3858 MT-200) -200V; 2SA1494 2SC3858 characteristics 2SC3858 2SA1494 equivalent MT200 package

    2SA1494

    Abstract: 2SC3858 DSA0016503
    Text: 2SA1494 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC3858 •Electrical Characteristics ICBO Ratings Unit VCB=–200V –100max µA 36.4±0.3 24.4±0.2 VEB=–6V –100max µA IC=–50mA –200min V VCEO –200 V IEBO VEBO –6 V V(BR)CEO


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    PDF 2SA1494 2SC3858) MT-200 100max 200min 50min 20typ 500typ 55ase 2SA1494 2SC3858 DSA0016503

    2sa1494

    Abstract: 2SC3858 30C50 transistor 2sa1494
    Text: 2SA1494 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC3858 •Electrical Characteristics ICBO 2SA1494 Unit VCB=–200V –100max µA 36.4±0.3 24.4±0.2 VEB=–6V –100max µA IC=–50mA –200min V VCEO –200 V IEBO VEBO –6 V V(BR)CEO


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    PDF 2SA1494 2SC3858) MT-200 100max 200min 50min 20typ 2sa1494 2SC3858 30C50 transistor 2sa1494

    2SC3858

    Abstract: 2SA1494 2sc3858 transistor transistor 2sc3858 DSA0016508
    Text: 2SC3858 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1494 Symbol Conditions Ratings Unit VCB=200V 100max µA VEB=6V 100max µA IC=50mA 200min V Ratings Unit VCBO 200 V ICBO VCEO 200 V IEBO VEBO 6 V V(BR)CEO IC 17 A hFE VCE=4V, IC=8A


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    PDF 2SC3858 2SA1494) 100max MT-200 200min 50min 20typ 300typ 2SC3858 2SA1494 2sc3858 transistor transistor 2sc3858 DSA0016508

    transistor 2sc3858

    Abstract: 2SC3858 2sc3858 transistor 2sa1494 characteristics 2SC3858 2sc3858 safe operating area
    Text: 2SC3858 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1494 200 V ICBO VCB=200V 100max µA IEBO VEB=6V 100max µA 200min V VEBO 6 V V(BR)CEO IC 17 A hFE VCE=4V, IC=8A 50min∗ IC=10A, IB=1A 2.5max V IC=50mA 24.4±0.2 A PC 200(Tc=25°C)


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    PDF 2SC3858 2SA1494) 100max 200min MT-200 50min 20typ transistor 2sc3858 2SC3858 2sc3858 transistor 2sa1494 characteristics 2SC3858 2sc3858 safe operating area

    Untitled

    Abstract: No abstract text available
    Text: 2SC3858 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)200 V(BR)CBO (V)200 I(C) Max. (A)17 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF 2SC3858 Freq20M

    2SA1295 2SC3264

    Abstract: 2SA1694 2SC4467 2SA1186 2SC2837 MT100 2sa1492 2sc3856 T03PF transistor 2sa1494 2SB1560 2SD2493 transistor 2sb1624 2sd2493
    Text: 2-1. Power Transistors Transistors for Audio Amplifier Single emitter Type No. PC W 2SA1725/2SC4511 30 2SA1726/2SC4512 50 VCEO (V) IC (A) hFE (min) fT (MH Z) Package FM20 (T0220F) MT-25 (T0220) 80 6 2SA1693/2SC4466 MT-100 (T03P) 60 2SA1907/2SC5099 FM100 (T03PF)


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    PDF 2SA1725/2SC4511 2SA1726/2SC4512 2SA1693/2SC4466 2SA1907/2SC5099 FM100 T03PF) 2SA1908/2SC5100 2SA1694/2SC4467 2SA1909/2SC5101 2SA1673/2SC4388 2SA1295 2SC3264 2SA1694 2SC4467 2SA1186 2SC2837 MT100 2sa1492 2sc3856 T03PF transistor 2sa1494 2SB1560 2SD2493 transistor 2sb1624 2sd2493

    SAP16

    Abstract: 2Sc4495 2SD2562 2SD2401 2SC3858 2SA1494 SAP16N 2SB1686 2sa1216 2sc2837 SAP09n to 3p
    Text: Power Transistors 2-1 2-1-1 Transistors for Audio Amplifiers •Complementary Transistors for Output Pc Ic VCEO W (A) (V) 30 50 60 75 80 85 100 125 130 150 200 6 80 6 110 Chip Single Transistor General 2SA1725 Package Darlington LAPT 2SC4511 2SA1726 TO-220F


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    PDF 2SA1725 2SA1726 2SA1693 2SA1907 2SC4511 2SB1686 2SC4512 2SB1659 2SC4466 2SC5099 SAP16 2Sc4495 2SD2562 2SD2401 2SC3858 2SA1494 SAP16N 2sa1216 2sc2837 SAP09n to 3p

    C4517

    Abstract: c5287 C4138 a1695 power transistor transistor c4381 C4517A C3678 C3852A A1216 C2922 transistor c5287
    Text: Transistor Selection Guide • VCEO-IC 800 C3678 C4020 C4299 C4304 C4445 C4908 C5249 C4517 C4517A C5239 600 550 C3679 C4300 C4706 C3927 C4557 C3830 C4907 400 C4073 C4418 C4662 C5130 C3831 C3832 C3890 C4130 C4546 C4138 C4296 C3833 C4297 C5071 D2017 200 A1668


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    PDF C3678 C4020 C4299 C4304 C4445 C4908 C5249 C4517 C4517A C5239 c5287 C4138 a1695 power transistor transistor c4381 C3852A A1216 C2922 transistor c5287

    sanken power transistor 2SA1216

    Abstract: 2SC2922 sanken transistor 2SC2922 SANKEN 2sc3263 sanken 2SA1186 SANKEN Sanken Transistor Mt 200 2SD2494 sanken power transistor 2sa1295 D01EC0 2sc2837
    Text: DISCRETE DEVICES DISCRETE BIPOLAR POWER TRANSISTORS Part Numbers PNP NPN PD W VCEO (V) IC (A) 80 80 80 80 120 120 140 180 140 180 200 200 6 6 6 6 8 8 10 15 10 15 15 17 fT (MHz) hfe (min) PNP/NPN Package Standard, Single-Emitter Types 2SA1725 2SA1726 2SA1693


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    PDF 2SA1725 2SA1726 2SA1693 2SA1907 2SA1908 2SA1694 2SA1909 2SA1673 2SA1695 2SA1492 sanken power transistor 2SA1216 2SC2922 sanken transistor 2SC2922 SANKEN 2sc3263 sanken 2SA1186 SANKEN Sanken Transistor Mt 200 2SD2494 sanken power transistor 2sa1295 D01EC0 2sc2837

    sanken power transistor 2SA1216

    Abstract: 2SC2922 SANKEN 2SC2922 sanken transistor sanken 2sc2922 Sanken 2SC2921 transistor 2sb1624 2sd2493 Sanken Transistor Mt 200 sanken 2sa1216 D01EC0 2sc2921 sanken
    Text: DISCRETE DEVICES DISCRETE BIPOLAR POWER TRANSISTORS Part Numbers PNP NPN PD W VCEO (V) IC (A) 80 80 80 80 120 120 140 180 140 180 200 200 6 6 6 6 8 8 10 15 10 15 15 17 fT (MHz) hfe (min) PNP/NPN Package Standard, Single-Emitter Types 2SA1725 2SA1726 2SA1693


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    PDF 2SA1725 2SA1726 2SA1693 2SA1907 2SA1908 2SA1694 2SA1909 2SA1673 2SA1695 2SA1492 sanken power transistor 2SA1216 2SC2922 SANKEN 2SC2922 sanken transistor sanken 2sc2922 Sanken 2SC2921 transistor 2sb1624 2sd2493 Sanken Transistor Mt 200 sanken 2sa1216 D01EC0 2sc2921 sanken

    2SC5487

    Abstract: 2sc5586 2SA2003 2Sb1352 2sa2042 PACKAGE MT-200 2SB1686 2SA200 MT-200
    Text: 2-1 Power Transistors 2-1-4 Part No. List of General Purpose Transistors by Part No. VCBO V VCEO(V) Ic(A) PC(W) 2SA1186 –150 –150 –10 100 TO-3P Package LAPT Remarks 2SA1215 –160 –160 –15 150 MT-200 (2-screw mount) LAPT 2SA1216 –180 –180 –17


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    PDF 2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1386A 2SA1488 2SC5487 2sc5586 2SA2003 2Sb1352 2sa2042 PACKAGE MT-200 2SB1686 2SA200 MT-200

    TRANSISTOR 2sc3858

    Abstract: 2SC3858 2sc3858 transistor 150W TRANSISTOR AUDIO AMPLIFIER 2sa1494 2SC3858 2SA1494
    Text: ü Am o s p e c HIGH-POWER NPN SILICON POWER TRANSISTORS NPN .designed for use in general-purpose amplifier and switching application. 2SC3858 FEATURES: * Recommend for 150W High Fidelity Audio Frequency Amplifier Output stage * Complementary to 2SA1494


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    PDF 2SA1494 2SC3858 TRANSISTOR 2sc3858 2sc3858 transistor 150W TRANSISTOR AUDIO AMPLIFIER 2sa1494 2SC3858 2SA1494

    2sa1494

    Abstract: transistor 2sa1494 2SC3858 2SC3858 2SA1494
    Text: ÆàMOSPEC HIGH-POWER PNP SILICON POW ER TRANSISTORS PN P .designed for use in general-purpose am plifier and switching application 2SA1494 FEATURES: » Recommend for 150W High Fiderity Audio Frequency Am plifier Output stage * Complementary to 2SC3858 17 AMPERE


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    PDF 2SC3858 2SA1494 lc-10A transistor 2sa1494 2SC3858 2SC3858 2SA1494

    Untitled

    Abstract: No abstract text available
    Text: I S A NK EN E L E C T R I C CO LTD SSE D • 7TìG7m DDDDin TSb « S A K J Silicon PNP Epitaxial Planar ☆Complement to type 2SC3858 2SA1494 Application Example : • Outline Drawing 3 . . M T -2 0 0 A u d io and G eneral Purpose Ta=25'C Electrical Characteristics


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    PDF 2SC3858 2SA1494 30min 20typ 200min T0220)

    2SC3858

    Abstract: No abstract text available
    Text: SANKEN ELECTRIC CO LT» SSE D • 7^0741 □ D D D t170 2T3 « S A K J Silicon N P N Triple Diffused Planar 2SC3858 -F 3 S r ß ☆ Com plem en t to type 2 S A 1 4 9 4 Application Example : e Outline Drawing 3 . . M T -2 0 0 A u d io and General Purpose


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    PDF 2SC3858 100max 200min 45x01 T0220) 2SC3858

    sanken power transistor 2SA1216

    Abstract: 2SC2922 SANKEN 2SC3855 SANKEN sanken power transistor 2sa1295 SANKEN 2sc3909 2SC3854 sanken 2SC2922 sanken transistor 2Sa1491 SANKEN 2SA1186 SANKEN 2SC4138
    Text: CONTENTS • Transistor Selection SANKEN POWER TRANSISTORS 2SC3854 •83 2SC4512 125 Guide .2 2SA1860 .43 2SA1907 . .4 4 2SC3855 84 2SC4517 126 ■ Reliability. 8 2SA1908 . 45


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    PDF 2SA1186. 2SA1215. 2SA1216. 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386A 2SA1488 2SA1860 sanken power transistor 2SA1216 2SC2922 SANKEN 2SC3855 SANKEN sanken power transistor 2sa1295 SANKEN 2sc3909 2SC3854 sanken 2SC2922 sanken transistor 2Sa1491 SANKEN 2SA1186 SANKEN 2SC4138

    2sa11

    Abstract: 2SA12 2SA17 2SB1560 2SA16 2SD2390 2SD2401 2SA13 2SD2493 2SC3264
    Text: 2-1. Power Transistors • Transistors for Audio Amplifier # Single emitter Type No. Pc W 2SA17 2 5 / 2SC4511 30 2SA17 2 6 / 2SC4512 50 Vceo (V' I- A hFE (min) fT (MHz'! Package FM20ÌT0220F) MT-25(T0220) 80 6 2SA16 9 3 / 2SC4466 MT-100ÌT03P) 60 2SA19 0 7 / 2SC5099


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    PDF 2SA17 2SC4511 2SC4512 2SA16 2SC4466 2SA19 2SC5099 FM100 T03PF) 2sa11 2SA12 2SB1560 2SD2390 2SD2401 2SA13 2SD2493 2SC3264