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    2SC3356W Price and Stock

    LRC Leshan Radio Co Ltd L2SC3356WT1G

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Karl Kruse GmbH & Co KG L2SC3356WT1G 10,000
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    2SC3356W Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SC3356W Galaxy Semi-Conductor Holdings Silicon Epitaxial Planar Transistor Original PDF

    2SC3356W Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: 2SC3356W High-Frequency Amplifier Transistors P b Lead Pb -Free COLLECTOR 3 3 DESCRIPTION: The 2SC3356W is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. 1 BASE 1 2 2 EMITTER SOT-323(SC-70) FEATURES: * We declare that the material of product


    Original     		PDF 2SC3356W 2SC3356W OT-323 SC-70) 24-Jan-2013 OT-323

    transistor code R24

    Abstract: R24 marking code transistor SOT R23 Transistor R25 r25 transistor transistor R24 r23 transistor SOT R25 2SC3356W R24 transistor
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC3356W FEATURES z Low noise and high gain: NF=1.1dB TYP, Ga=11dB TYP. @VCE=10V,IC=7mA,f=1.0GHz z Pb Lead-free High power gain:MAG=13dB TYP. @VCE=10V.IC=20mA,f=1.0GHz APPLICATIONS


    Original     		PDF 2SC3356W OT-323 R23/R24/R25 200taxial BL/SSSTF001 transistor code R24 R24 marking code transistor SOT R23 Transistor R25 r25 transistor transistor R24 r23 transistor SOT R25 2SC3356W R24 transistor