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    2SC3303 Search Results

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    2SC3303 Price and Stock

    Toshiba America Electronic Components 2SC3303-Y(T6L1,NQ)

    TRANS NPN 80V 5A PW-MOLD
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    DigiKey 2SC3303-Y(T6L1,NQ) Cut Tape 935 1
    • 1 $1.29
    • 10 $1.053
    • 100 $0.8191
    • 1000 $0.56556
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    2SC3303-Y(T6L1,NQ) Reel 2,000
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    • 10000 $0.4975
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    2SC3303-Y(T6L1,NQ) Digi-Reel 1
    • 1 $1.29
    • 10 $1.053
    • 100 $0.8191
    • 1000 $0.56556
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    Mouser Electronics 2SC3303-Y(T6L1,NQ) 148
    • 1 $1.29
    • 10 $1.06
    • 100 $0.82
    • 1000 $0.577
    • 10000 $0.532
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    Chip1Stop 2SC3303-Y(T6L1,NQ) Cut Tape 2
    • 1 -
    • 10 $0.884
    • 100 $0.884
    • 1000 $0.884
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    EBV Elektronik 2SC3303-Y(T6L1,NQ) 17 Weeks 2,000
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    Micro Commercial Components 2SC3303-BP

    TRANS NPN 80V 5A TO251
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    DigiKey 2SC3303-BP Bulk
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    Micro Commercial Components 2SC3303-Y-TP

    TRANS NPN 80V 5A DPAK
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    Micro Commercial Components 2SC3303-O-TP

    TRANS NPN 80V 5A TO251
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    DigiKey 2SC3303-O-TP Reel
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    Toshiba America Electronic Components 2SC3303-Y(T6L1NQ)

    Trans GP BJT NPN 80V 5A 3-Pin(2+Tab) New PW-Mold T/R - Tape and Reel (Alt: 2SC3303-Y(T6L1,NQ))
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 2SC3303-Y(T6L1NQ) Reel 18 Weeks 2,000
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    • 10000 $0.56516
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    2SC3303 Datasheets (38)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SC3303 Toshiba Silicon NPN Transistor Original PDF
    2SC3303 Toshiba NPN Transistor Original PDF
    2SC3303 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC3303 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC3303 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SC3303 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SC3303 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC3303 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC3303 Unknown Scan PDF
    2SC3303 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC3303 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC3303 Toshiba Toshiba Shortform Catalog Scan PDF
    2SC3303 Toshiba Silicon NPN transistor for high current switching applications Scan PDF
    2SC3303 Toshiba SILICON NPN EPITAXIAL TYPE (PCT PROCESS) TRANSISTOR Scan PDF
    2SC3303(2-7B1A) Toshiba 2SC3303 - TRANSISTOR 5000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-7B1A, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SC3303(2-7B2A) Toshiba 2SC3303 - TRANSISTOR 5000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-7B2A, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SC3303(2-7J1A) Toshiba 2SC3303 - TRANSISTOR 5000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-7J1A, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SC3303-BP Micro Commercial Components TRANSISTOR TO-92 MOD Original PDF
    2SC3303O Toshiba 2SC3303 - TRANSISTOR 5000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal Original PDF
    2SC3303-O Unknown Transistor Shortform Datasheet & Cross References Scan PDF

    2SC3303 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC3303

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors 2SC3303 TRANSISTOR NPN TO – 251 FEATURES z Low Collector Saturation Voltage z High Speed Switching Time 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


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    PDF O-251 2SC3303 150mA 2SC3303

    C3303 transistor

    Abstract: 2SC3303 C3303 C3303 npn 2SC330
    Text: 2SC3303 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3303 Industrial Applications High Current Switching Applications DC-DC Converter Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 s (typ.)


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    PDF 2SC3303 C3303 transistor 2SC3303 C3303 C3303 npn 2SC330

    C3303 transistor

    Abstract: 2SC3303 C3303 C3303 npn
    Text: 2SC3303 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3303 Industrial Applications High Current Switching Applications DC-DC Converter Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) · High speed switching time: tstg = 1.0 µs (typ.)


    Original
    PDF 2SC3303 C3303 transistor 2SC3303 C3303 C3303 npn

    2SC3303

    Abstract: No abstract text available
    Text: 2SC3303 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3303 ○ 大電流高速スイッチング用 ○ DC − DC コンバータ用 単位: mm • コレクタ飽和電圧が低い。: VCE (sat) = 0.4 V (最大) (IC = 3 A)


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    PDF 2SC3303 2SC3303

    2SC3303

    Abstract: No abstract text available
    Text: Reliability Tests Report Product Name: 2SC3303 Package Name: New PW-Mold 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Flow) Heat resistance (Iron) Temperature cycling Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s


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    PDF 2SC3303 2SC3303

    C3303 transistor

    Abstract: 2SC3303 C3303 npn C3303
    Text: 2SC3303 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3303 Industrial Applications High Current Switching Applications DC-DC Converter Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 s (typ.)


    Original
    PDF 2SC3303 C3303 transistor 2SC3303 C3303 npn C3303

    2SC3303

    Abstract: No abstract text available
    Text: 2SC3303 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3303 Industrial Applications High Current Switching Applications DC-DC Converter Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 s (typ.)


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    PDF 2SC3303 2SC3303

    2SC3303

    Abstract: C3303 npn C3303 2SC330
    Text: 2SC3303 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3303 ○ 大電流高速スイッチング用 ○ DC − DC コンバータ用 単位: mm • コレクタ飽和電圧が低い。: VCE (sat) = 0.4 V (最大) (IC = 3 A)


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    PDF 2SC3303 20070701-JA 2SC3303 C3303 npn C3303 2SC330

    C3303 transistor

    Abstract: 2SC3303
    Text: 2SC3303 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3303 Industrial Applications High Current Switching Applications DC-DC Converter Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 µs (typ.)


    Original
    PDF 2SC3303 C3303 transistor 2SC3303

    C3303 transistor

    Abstract: C3303 C3303 npn 2SC3303
    Text: 2SC3303 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3303 Industrial Applications High Current Switching Applications DC-DC Converter Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 µs (typ.)


    Original
    PDF 2SC3303 C3303 transistor C3303 C3303 npn 2SC3303

    2SC3303

    Abstract: No abstract text available
    Text: 2SC3303 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3303 Industrial Applications High Current Switching Applications DC-DC Converter Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 µs (typ.)


    Original
    PDF 2SC3303 2SC3303

    C3303 transistor

    Abstract: 2SC3303 C3303 C3303 npn
    Text: 2SC3303 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3303 Industrial Applications High Current Switching Applications DC-DC Converter Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 µs (typ.)


    Original
    PDF 2SC3303 C3303 transistor 2SC3303 C3303 C3303 npn

    2SC3303

    Abstract: No abstract text available
    Text: 2SC3303 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3303 Industrial Applications High Current Switching Applications DC-DC Converter Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 s (typ.)


    Original
    PDF 2SC3303 2SC3303

    C3303 npn

    Abstract: 2SC3303 C3303
    Text: 2SC3303 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3303 ○ 大電流高速スイッチング用 ○ DC − DC コンバータ用 単位: mm • コレクタ飽和電圧が低い。: VCE (sat) = 0.4 V (最大) (IC = 3 A)


    Original
    PDF 2SC3303 C3303 npn 2SC3303 C3303

    2SC3303

    Abstract: No abstract text available
    Text: TO SH IBA 2SC3303 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3303 HIGH CURRENT SWITCHING APPLICATIONS • • Unit in mm Low Collector Saturation Voltage : VCE (saf) = 0.4 V (Max.) (at In = 3 A) High Speed Switching Time : tstg = 1.0 jus (Typ.)


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    PDF 2SC3303 2SC3303

    2SC3303

    Abstract: No abstract text available
    Text: TOSHIBA 2SC3303 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3303 HIGH CURRENT SWITCHING APPLICATIONS • INDUSTRIAL APPLICATIONS Low Collector Saturation Voltage : VCE (sat) = °-4 v (Max.) (at If; = 3 A) High Speed Switching Time : ts^g = 1.0 /j s (Typ.)


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    PDF 2SC3303 2SC3303

    2SC3303

    Abstract: No abstract text available
    Text: TOSHIBA 2SC3303 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3303 HIGH CURRENT SWITCHING APPLICATIONS • • INDUSTRIAL APPLICATIONS Low Collector Saturation Voltage : VCE (sat) - °-4 v (Max.) (at l£ = 3 A) High Speed Switching Time : tstg = 1.0 /us (Typ.)


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    PDF 2SC3303 95IV1AX. 2SC3303

    2sc3288

    Abstract: 2SC3284 2SC3311 2SC3289 2-4F1C 2SA1306 2SC3298 2SA1309 2SC3303 2-21F1A 2SC3287
    Text: - 152 - mXËfâ M 2SC3279 2SC3280 2SC3281 2SC3282A 2SC3283A 2SC3284 2SC3285 2SC3286-M 2SC3287 2SC3288 2SC3289 2SC3292 2SC3293 2SC3294 2SC3296 2SC3298 2SC3298A 2SC3298B 2SC3299 2SC3302 2SC3303 2SC3306 2SC3307 2SC3309 2SC3310 2SC3311 2SC3311A 2SC3312 2SC3313


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    PDF 2SC3279 2SC3280 2SC3281 2SC3282A 800MHz 2SC3283A 2SC3284 2SC3285 2SC3286-M 2sc3288 2SC3284 2SC3311 2SC3289 2-4F1C 2SA1306 2SC3298 2SA1309 2SC3303 2-21F1A 2SC3287

    2SC3303

    Abstract: No abstract text available
    Text: T O SH IB A 2SC3303 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3303 HIGH CURRENT SWITCHING APPLICATIONS. • Low Collector Saturation Voltage : VCE (sat) = 0.4V (Max.) (at IC = 3A) High Speed Switching Time : tg^g—1.0/^s (Typ.) INDUSTRIAL APPLICATIONS


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    PDF 2SC3303 2SC3303

    2SDI80

    Abstract: 2sc2238 2SD1431 2SC3303 2SC212Q 2sd1855 2SD1877 2SC3257 2SD1212 2SD1409
    Text: - m £ Type No. 2SD 1442 / fé T 2SÖ 1442A fé T 2SD fé T fé T tt 1443 2SD 1443A 2SD 1444 € M anuf. ✓ m h SANYO 2SD1235 2SD1409 2SC27Q3 2SC3303 2SD471 2SD 1446 ^ fé T 2SD 1447 ~ h m 2SD400 2SD B Ü n 2SDÎ802 2SD1802 a 2SD 1450 ^ 2SD 1451 a 2SD 1452


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    PDF 2SD1442 2SD1235 2SD1212 2SD1212 2SD400 2SD553 2SD1444 2SD1445 2SD1445A 2SDI80 2sc2238 2SD1431 2SC3303 2SC212Q 2sd1855 2SD1877 2SC3257 2SD1409

    2SC3303

    Abstract: No abstract text available
    Text: TO SH IB A 2SC3303 T O S H IB A TRA N SIST O R SILICON NPN EPIT A X IA L TYPE PCT PRO CESS 2SC 3303 HIGH C URREN T SW ITC H IN G A PPLIC A TIO N S • IN D U S T R IA L A P P L IC A T IO N S Low C ollector S a tu ra tio n V o lta g e : V CE (sat) = 0 .4 V (M ax.) (a t Ip = 3 A )


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    PDF 2SC3303 2SC3303

    2SC3303

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE 2SC3303 INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. 68MAX. FEATURES: "I 5.2Í0.2 3 o 02 . Low Collector Saturation Voltage J 1" : vCE sat =°-4 v (Max.) 0.6 MAX. (at IC=3A) . High Speed Switching Time : tstg=l.0,us (Typ .)


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    PDF 2SC3303 68MAX. n-i--30 2SC3303

    2SC3303

    Abstract: No abstract text available
    Text: T O SH IB A 2SC3303 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS INDUSTRIAL APPLICATIONS HIGH CURRENT SWITCHING APPLICATIONS • Low Collector Saturation Voltage : VCE (sat) = °-4 v (Max.) (at Iß = 3 A) High Speed Switching Time : tstg = 1.0 jus (Typ.)


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    PDF 2SC3303 2SC3303

    Transistor 2SA 2SB 2SC 2SD

    Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
    Text: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)


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    PDF O-126 O-126 T0-220AB, O-220 2SC4544 2SC4448 2SC3612 2BC4201 Transistor 2SA 2SB 2SC 2SD S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346