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    2SC305 Search Results

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    2SC305 Price and Stock

    Micro Commercial Components 2SC3052-F-TP

    TRANSISTOR NPN SOT-23
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    Micro Commercial Components 2SC3052-G-TP

    TRANSISTOR NPN SOT-23
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    Micro Commercial Components 2SC3052-E-TP

    TRANSISTOR NPN SOT-23
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    FUJITSU Limited 2SC3058A

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    Bristol Electronics 2SC3058A 54
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    Bristol Electronics 2SC3052-T15-1E 2,305 3
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    Quest Components 2SC3052-T15-1E 1,844
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    2SC305 Datasheets (77)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SC305 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC305 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC305 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SC305 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC305 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC305 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC305 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC305 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC305 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC305 Unknown Cross Reference Datasheet Scan PDF
    2SC3050 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC3050 Unknown Cross Reference Datasheet Scan PDF
    2SC3051 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC3051 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC3051 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC3051 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC3051 Toshiba Silicon NPN Triple Diffused Type Transistor Scan PDF
    2SC3052 Jiangsu Changjiang Electronics Technology TRANSISTOR (NPN) Original PDF
    2SC3052 Kexin NPN Transistor Original PDF
    2SC3052 Mitsubishi TRANS GP BJT NPN 50V 0.2A 3TO-236 Original PDF

    2SC305 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC3055

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification 2SC3055 Silicon NPN Power Transistors • DESCRIPTION ·With TO-220C package ·High breakdown voltage ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING PIN DESCRIPTION 1 Base


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    PDF 2SC3055 O-220C PW300s cycle10% 2SC3055

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 2SC3052-E 2SC3052-F 2SC3052-G   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • Halogen free available upon request by adding suffix "-HF"


    Original
    PDF 2SC3052-E 2SC3052-F 2SC3052-G 100mA OT-23

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 2SC3052 TRANSISTOR(NPN ) 1. BASE 2. EMITTER 3. COLLECTOR 1.0 FEATURES Power dissipation PCM : 0.15 W(Tamb=25℃) Collector current ICM: 0.2 A Collector-base voltage


    Original
    PDF OT-23 2SC3052 037TPY 950TPY 550REF 022REF

    Untitled

    Abstract: No abstract text available
    Text: SOT-23-3L Plastic-Encapsulate Transistors 2SC3052 TRANSISTOR NPN SOT-23-3L 1. BASE FEATURES 2. EMITTER 3. COLLECTOR 0.15 W (Tamb=25℃) 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current 0.2 A ICM: Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range


    Original
    PDF OT-23-3L 2SC3052 OT-23-3L 100mA,

    2SC3052

    Abstract: RT2C00M
    Text: RT2C00M COMPOSITE TRANSISTOR FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 SC-88 package. 1.25 0.2 RT2C00M is a composite transistor built with two 2SC3052 chips in FEATURE ① 0.65 ⑤ 2.0 Each transistor elements are independent.


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    PDF RT2C00M SC-88 RT2C00M 2SC3052

    2sc3052

    Abstract: MARKING lf npn
    Text: 2SC3052 2SC3052 TRANSISTOR NPN SOT-23-3L 1. BASE FEATURES 2. EMITTER 3. COLLECTOR 0.15 W (Tamb=25℃) 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current ICM: 0.2 A Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range 0. 35


    Original
    PDF 2SC3052 OT-23-3L 100mA, 2sc3052 MARKING lf npn

    2SC3058

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification 2SC3058 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High voltage ,high speed APPLICATIONS ・For switching regulator and DC/DC converter applications PINNING See Fig.2 PIN DESCRIPTION 1 Base


    Original
    PDF 2SC3058 2SC3058

    2SC3052-G

    Abstract: 2SC3052 2sc3052f
    Text: MCC TM Micro Commercial Components 2SC3052-E 2SC3052-F 2SC3052-G   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • Halogen free available upon request by adding suffix "-HF"


    Original
    PDF 2SC3052-E 2SC3052-F 2SC3052-G 100mA OT-23 2SC3052-G 2SC3052 2sc3052f

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC3052 TRANSISTOR NPN FEATURES 1. BASE z z 2. EMITTER Low collector to emitter saturation voltage VCE(sat)=0.3V max(@IC=100mA,IB=10mA) Excellent linearity of DC forward current gain


    Original
    PDF OT-23 OT-23 2SC3052 100mA 100mA,

    2sc3055

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SC3055 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High breakdown voltage ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING PIN DESCRIPTION 1 Base


    Original
    PDF 2SC3055 O-220C PW-300 cycle-10% 2sc3055

    2sc3052

    Abstract: 2SC3052F 2SC3052E 2SC3052-F 2SC3052G transistor 2sc3052 MARKING lf npn transistor marking LF marking LE 2SC3052-E
    Text: 2SC3052 0.2A , 50V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE A Excellent linearity of DC forward current gain. Low collector to emitter saturation voltage


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    PDF 2SC3052 OT-23 100mA, 2SC3052-E 2SC3052-F 2SC3052-G 2sc3052 2SC3052F 2SC3052E 2SC3052-F 2SC3052G transistor 2sc3052 MARKING lf npn transistor marking LF marking LE 2SC3052-E

    BC125

    Abstract: 2N907 G700M BC232B 2N1410 kt384a LOW-POWER SILICON NPN 2N474 BFY33 3N35
    Text: LOW-POWER SILICON NPN Item Number Part Number 2SC3246K 2SD1627 2SC3053 BFY72 2N2414 2N4968 V BR CEO 10 15 TP5451 40080 MPS3566 MPS3566 2S741 2S741 2S741A PET3704 PET3705 2N471 ~~1~~~ 20 25 - 30 35 D4C28 4C28 2N546 2N1252A 2N1252A 2N907 2N761 BC120 ~g~~g SE8oo1


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    PDF 2SC3246K 2SD1627 2SC3053 BFY72 2N2414 2N4968 TP5451 MPS3566 2S741 BC125 2N907 G700M BC232B 2N1410 kt384a LOW-POWER SILICON NPN 2N474 BFY33 3N35

    Untitled

    Abstract: No abstract text available
    Text: 2SC3059 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)850 V(BR)CBO (V)1.2k I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original
    PDF 2SC3059 time500n

    2SC3058A

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SC3058A Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High voltage ,high speed APPLICATIONS ·For switching regulator and DC/DC converter applications PINNING See Fig.2 PIN DESCRIPTION 1 Base


    Original
    PDF 2SC3058A 2SC3058A

    sot-23 Marking Lf

    Abstract: sot-23 Marking LG 2sc3052 MARKING LG
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC3052 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 0 FEATURES Power dissipation 2. 4 1. 3 W (Tamb=25℃) TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃


    Original
    PDF OT-23 OT-23 2SC3052 100mA, sot-23 Marking Lf sot-23 Marking LG 2sc3052 MARKING LG

    .5J1

    Abstract: 2SC3056A 1S80 2SC3056 high frequency npn transistors collector to emitter voltage 400V 3A 1Mhz transistor 9036 Q01t
    Text: FUJITSU MICROELE CT RON IC S 31E D Di 3 7 4 m 2 OOlbStt. 3 D F H I T'33"H January 1990 Edition 1.1 O r. FUJITSU P R O D U C T P R O F IL E - 2SC3056, 2SC30S6A Silicon High Speed Power Transistor DESCRIPTION The 2SC3056/2SC3056A are silicon N PN planar general purpose, high power


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    PDF 2SC3056, 2SC3056A 2SC3056/2SC3056A Q01tiS70 9036-f .5J1 2SC3056A 1S80 2SC3056 high frequency npn transistors collector to emitter voltage 400V 3A 1Mhz transistor 9036 Q01t

    Untitled

    Abstract: No abstract text available
    Text: Power T ransistors 2SC3054 2SC3054 Silicon NPN Triple-Diffused Junction M esa Darlington Type High Breakdown Voltage, High Speed Switching • Features Package Dimensions, • High breakdow n voltage and high reliability by glass passivation • High DC cu rre n t gain


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    PDF 2SC3054

    2SG3053

    Abstract: 2SC3053
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC3053 FOR HIGH FREQUENCY AMPLIFY, MEDIUM FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SG3053 is a super mini silicon NPN epitaxial type transistor OUTLINE DRAWING „ „


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    PDF 2SC3053 2SG3053 -100MH2 2SC3053

    Untitled

    Abstract: No abstract text available
    Text: January 1990 Edition 1.1 PRODUCT PROFILE . 2SC3058A Silicon High Speed Power Transistor DESCRIPTION T h e 2 S C 3 0 5 8 A is a silicon N P N plan ar general purpose, high p ow er switching tra n ­ sistor fabricated w ith Fujitsu's unique Ring E m itte r Transistor R E T te chnology.


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    PDF 2SC3058A 2SC3058A

    2SC3058

    Abstract: No abstract text available
    Text: January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE. 2SC3058 Silicon High Speed Power Transistor DESCRIPTION The 2SC3058 is a silicon NPN planar general purpose, high power switching tran ­ sistor fabricated w ith Fujitsu's unique Ring E m itter Transistor {RET technology.


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    PDF 2SC3058 2SC3058

    2SC3055

    Abstract: E3 37497 2sc3055 transistor high power switching transistor
    Text: FUJITSU MICROEL ECT RONICS 31E D E3 3?»H7b2 QQlbSbD a S F M I January 1990 i 9 i T - r 'T m!on1-1_ P R O D U C T P R O F I L E = ¥ FUJITSU - ' 2SC3055 Silicon High Speed Power Transistor DESCRIPTION Th e 2SC 3055 is a silicon NPN planar general purpose, high power switching tran*


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    PDF 2SC3055 2SC3055 laC3055 374CJ7LB T-33-07 E3 37497 2sc3055 transistor high power switching transistor

    2SC3056

    Abstract: No abstract text available
    Text: Ç p January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE: 2SC3056, 2SC3056A Silicon High Speed Power Transistor DESCRIPTION The 2SC3056/2SC3056A are silicon NPN planar general purpose, high power switching transistors fabricated with Fujitsu's unique Ring Emitter Transistor


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    PDF 2SC3056, 2SC3056A 2SC3056/2SC3056A 2SC3056

    2SC3058

    Abstract: high power switching transistor
    Text: FUJITSU M I C R O E L E C T R O N I C S 31E » O 3 7 4 c17tiE G01L.57Ô T ESFMI T -3 3 5 ' January 1990 Edition 1.1 FUJITSU P R O D U C T P R O F IL E - 2SC3058 Silicon High Speed Power Transistor DESCRIPTION The 2SC3058 is a silicon NPN planar general purpose, high power switching tran­


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    PDF 374c17tiE T-33-ir 2SC3058 2SC3058 T-33-15 VclamD-450V high power switching transistor

    2SC3058

    Abstract: No abstract text available
    Text: FU JI TSU M I C R O E L E C T R O N I C S 31E D ES BTLHTbH 001bS7ô T E1FI1I T -3 3 -l 5” January 1990 Edition 1.1 FUJITSU 2SC3058 Silicon High Speed Power Transistor DESCRIPTION The 2SC3058 is a silicon NPN planar general purpose, high power switching tran­


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    PDF 37417b2 2SC3058 2SC3058 374T7b2 VclamD-450V