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    2SC2655 Search Results

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    2SC2655 Price and Stock

    Micro Commercial Components 2SC2655L-Y-AP

    TRANS NPN 50V 2A TO92
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    Micro Commercial Components 2SC2655L-O-AP

    TRANS NPN 50V 2A TO92
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    Toshiba America Electronic Components 2SC2655-Y,T6F(J

    TRANS NPN 50V 2A TO92MOD
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    Toshiba America Electronic Components 2SC2655-O(ND1,AF)

    TRANS NPN 50V 2A TO92MOD
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    Toshiba America Electronic Components 2SC2655-O(ND2,AF)

    TRANS NPN 50V 2A TO92MOD
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    Find more 2SC2655 price and stock on Findchips.com

    2SC2655 Datasheets (50)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SC2655 Unisonic Technologies POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS Original PDF
    2SC2655 Various Russian Datasheets Transistor Original PDF
    2SC2655 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC2655 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC2655 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC2655 Unknown Cross Reference Datasheet Scan PDF
    2SC2655 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SC2655 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC2655 Unknown Scan PDF
    2SC2655 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC2655 Unknown Silicon NPN high speed power switching transisor Scan PDF
    2SC2655 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC2655 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC2655 Toshiba Toshiba Shortform Catalog Scan PDF
    2SC2655 Toshiba TO-92MOD Audio / TV Transistors Scan PDF
    2SC2655 Toshiba Silicon NPN transistor for power amplifier and power switching applications Scan PDF
    2SC2655 Toshiba TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) Scan PDF
    2SC2655 Toshiba Integrated Circuits for TV Systems Scan PDF
    2SC2655L-O-AP Micro Commercial Components TRANSISTOR TO-92 MOD Original PDF
    2SC2655L-Y-AP Micro Commercial Components TRANSISTOR TO-92 MOD Original PDF

    2SC2655 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2sc2655

    Abstract: 1345 NPN
    Text: 2SC2655 NPN General Purpose Transistors P b Lead Pb -Free 1 2 3 1.EMITTER 3.BASE 2.COLLECTOR TO-92MOD ELECTRICAL CHARACTERISTICS（Tamb=25℃ Symbol Parameter Test unless otherwise conditions specified） MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO


    Original     		PDF 2SC2655 O-92MOD 500mA 19-Feb-09 O-92MOD 50Typ 2sc2655 1345 NPN

    2sc2655

    Abstract: equivalent 2SC2655 2SA1020
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC2655 TRANSISTOR NPN TO-92MOD FEATURES z Low saturation voltage: VCE(sat)=0.5V(Max)(IC=1A) z High speed switching time: tstg=1 s(Typ.) z Complementary to 2SA1020


    Original     		PDF O-92MOD 2SC2655 O-92MOD 2SA1020 500mA 2sc2655 equivalent 2SC2655 2SA1020

    equivalent 2SC2655

    Abstract: 2sc2655 1.5A NPN power transistor TO-92 transistor 2SC2655
    Text: ST 2SC2655 TO-92 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC2655 equivalent 2SC2655 2sc2655 1.5A NPN power transistor TO-92 transistor 2SC2655

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC2655 TO-92MOD TRANSISTOR NPN 1. EMITTER FEATURES Power dissipation 2. COLLECTOR PCM: 900 mW (Tamb=25℃) 3. BASE Collector current 2 A ICM: Collector-base voltage


    Original     		PDF O-92MOD 2SC2655 O-92MOD 500mA

    2SC2655L

    Abstract: 2SC2655
    Text: ST 2SC2655L NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC2655L O-92L 2SC2655L 2SC2655

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2655 NPN SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS „ FEATURES * Low saturation voltage: VCE SAT = 0.5V (Max.) * High speed switching time: TSTG=1.0 s (Typ.) „ ORDERING INFORMATION Ordering Number


    Original     		PDF 2SC2655 2SC2655L-x-AE3-R 2SC2655L-x-T9N-B 2SC2655L-x-T9N-K 2SC2655L-x-T9N-R 2SC2655Gx-AE3-R 2SC2655Gx-T9N-B 2SC2655Gx-T9N-K 2SC2655Gx-T9N-R OT-23

    C2655 NPN Transistor

    Abstract: transistor C2655 c2655 c2655 transistor C2655 characteristics C2655 Y C2655(Y)-T 2sc2655 c2655 equivalent BR C2655
    Text: 2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2655 Industrial Applications Power Amplifier Applications Power Switching Applications • Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW


    Original     		PDF 2SC2655 2SA1020. 15oducts C2655 NPN Transistor transistor C2655 c2655 c2655 transistor C2655 characteristics C2655 Y C2655(Y)-T 2sc2655 c2655 equivalent BR C2655

    2SC2655

    Abstract: transistor 2SC2655 IC 1730 2sc2655 y TO-92MOD transistor ic1A
    Text: 2SC2655 TO-92MOD Transistor NPN TO-92MOD 1.EMITTER 1 2 3 5.800 6.200 2.COLLECTOR 3.BASE 8.400 8.800 Features — 0.900 1.100 0.400 0.600 Low saturation voltage: VCE(sat)=0.5V(Max)(IC=1A) High speed switching time: tstg=1 s(Typ.) Complementary to 2SA1020


    Original     		PDF 2SC2655 O-92MOD O-92MOD 2SA1020 500mA 2SC2655 transistor 2SC2655 IC 1730 2sc2655 y TO-92MOD transistor ic1A

    2SC2655

    Abstract: transistor 2SC2655 TO-92L transistor ic1A to92l 2SC2655 Y IC 7800 2sC2655 NPN Transistor transistor 7800 TO 92L NPN Transistor
    Text: 2SC2655 TO-92L Transistor NPN TO-92L 1.EMITTER 4.700 5.100 2.COLLECTOR 7.800 8.200 3.BASE Features — 1 2 3 0.600 0.800 Low saturation voltage: VCE(sat)=0.5V(Max)(IC=1A) High speed switching time: tstg=1 s(Typ.) Complementary to 2SA1020 — — 0.350 0.550


    Original     		PDF O-92L 2SC2655 O-92L 2SA1020 500mA 2SC2655 transistor 2SC2655 TO-92L transistor ic1A to92l 2SC2655 Y IC 7800 2sC2655 NPN Transistor transistor 7800 TO 92L NPN Transistor

    equivalent 2SC2655

    Abstract: 2sc2655 2SC2655 datasheet
    Text: 2SC2655 2SC2655 TO-92MOD TRANSISTOR NPN FEATURES Power dissipation 1. EMITTER 2. COLLECTOR PCM: 900 mW (Tamb=25℃) 3. BASE Collector current 2 A ICM: Collector-base voltage V(BR)CBO: 50 V Operating and storage junction temperature range 123 TJ, Tstg: -55℃ to +150℃


    Original     		PDF 2SC2655 O-92MOD 500mA equivalent 2SC2655 2sc2655 2SC2655 datasheet

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SC2655 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES *Low saturation voltage VCE sat = 0.5V (Max.) *High speed switching time tstg=1.0 s (Typ.) 1 TO-92NL 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )


    Original     		PDF 2SC2655 O-92NL QW-R211-013

    2sc2655

    Abstract: equivalent 2SC2655 2SA1020
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SC2655 TRANSISTOR NPN TO-92L FEATURES z Low saturation voltage: VCE(sat)=0.5V(Max)(IC=1A) z High speed switching time: tstg=1 s(Typ.) z Complementary to 2SA1020 1.EMITTER


    Original     		PDF O-92L 2SC2655 O-92L 2SA1020 500mA 2sc2655 equivalent 2SC2655 2SA1020

    C2655 NPN Transistor

    Abstract: C2655 toshiba marking code transistor 2sc2655 C2655 Y transistor C2655 BR C2655 C2655 characteristics C2655 Y 06 C2655 TRANSISTOR 2SC2655
    Text: 2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2655 Industrial Applications Power Amplifier Applications Power Switching Applications • Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW


    Original     		PDF 2SC2655 2SA1020. O-92MOD C2655 NPN Transistor C2655 toshiba marking code transistor 2sc2655 C2655 Y transistor C2655 BR C2655 C2655 characteristics C2655 Y 06 C2655 TRANSISTOR 2SC2655

    2SC2655L

    Abstract: No abstract text available
    Text: ST 2SC2655L NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC2655L O-92L 2SC2655L

    C2655

    Abstract: C2655 Y 2SC2655 BR C2655 C2655 Y 06 C2655 Y.8g C2655 Y 40 C2655 y 05 2SA1020
    Text: 2SC2655 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC2655 ○ 電力増幅用 ○ 電力スイッチング用 単位: mm • 飽和電圧が低い。 • 許容コレクタ損失が大きい。 : PC = 900 mW • スイッチング時間が速い。


    Original     		PDF 2SC2655 2SA1020 O-92MOD 20070701-JA C2655 C2655 Y 2SC2655 BR C2655 C2655 Y 06 C2655 Y.8g C2655 Y 40 C2655 y 05 2SA1020

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components Features • • • • • • 2SC2655L-O 2SC2655L-Y   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Collector of 0.9Watts of Power Dissipation. Collector-current 2.0A


    Original     		PDF 2SC2655L-O 2SC2655L-Y 10mAdc, 100uAdc, 100mAdc, 50Vdc,

    c2655

    Abstract: C2655 Y BR C2655 2SC2655 C2655 Y 06 C2655 BR 2sc2655 y C2655 Y 40 C2655 y 05 2SA1020
    Text: 2SC2655 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC2655 ○ 電力増幅用 ○ 電力スイッチング用 単位: mm • 飽和電圧が低い。 • 許容コレクタ損失が大きい。 : PC = 900 mW • スイッチング時間が速い。


    Original     		PDF 2SC2655 2SA1020 O-92MOD c2655 C2655 Y BR C2655 2SC2655 C2655 Y 06 C2655 BR 2sc2655 y C2655 Y 40 C2655 y 05 2SA1020

    C2655 NPN Transistor

    Abstract: transistor C2655 C2655 C2655 Y toshiba marking code transistor 2sc2655 C2655 transistor c2655 equivalent C2655 characteristics BR C2655 C2655 Y 06
    Text: 2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2655 Industrial Applications Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW


    Original     		PDF 2SC2655 2SA1020. C2655 NPN Transistor transistor C2655 C2655 C2655 Y toshiba marking code transistor 2sc2655 C2655 transistor c2655 equivalent C2655 characteristics BR C2655 C2655 Y 06

    2sc2655

    Abstract: 2SC2655 NPN Transistor equivalent 2SC2655
    Text: ST 2SC2655 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC2655 O-92L 2sc2655 2SC2655 NPN Transistor equivalent 2SC2655

    2SC2655

    Abstract: 2SC2655 Silicon NPN Epitaxial Type transistor 2SC2655 2sc2655 y
    Text: T O SH IB A 2SC2655 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2655 INDUSTRIAL APPLICATIONS POWER SWITCHING APPLICATIONS. • Low Saturation Voltage : VCE (sat) = 0.5V (Max.) (IC = 1A) High Speed Switching Time : tgtg =1.0/^s (Typ.)


    OCR Scan     		PDF 2SC2655 2SA1020. 2SC2655 2SC2655 Silicon NPN Epitaxial Type transistor 2SC2655 2sc2655 y

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC2655 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S C2 6 5 5 PO W ER AM PLIFIER APPLICATIONS. INDUSTRIAL APPLICATIONS PO W ER SWITCHING APPLICATIONS. • Low Saturation Voltage : VCE ( s a t ) = 0-5V (Max.) (Iç = lA) • High Speed Switching Time : ts^g=1.0/^s (Typ.)


    OCR Scan     		PDF 2SC2655 2SA1020.

    2SC2655

    Abstract: 2SC2655 Silicon NPN Epitaxial Type 2SA1020
    Text: TOSHIBA 2SC2655 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS. SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2655 INDUSTRIAL APPLICATIONS PO W ER SWITCHING APPLICATIONS. • Low Saturation Voltage : v CE(sat) = °-5V (Max.) (Ie = lA) High Speed Switching Time : tgtg^l.O/^s (Typ.)


    OCR Scan     		PDF 2SC2655 2SA1020. 75MAX O-92MOD 2SC2655 2SC2655 Silicon NPN Epitaxial Type 2SA1020

    2SC2655 Silicon NPN Epitaxial Type

    Abstract: 2SA1020 2SC2655
    Text: TO SH IBA 2SC2655 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2655 5.1 MAX. POWER SWITCHING APPLICATIONS • • • Unit in mm Low Saturation Voltage : v CE(sat) = °-5V (Max.) (Ie = lA) High Speed Switching Time : tgtg^l.O/^s (Typ.)


    OCR Scan     		PDF 2SC2655 2SA1020. O-92MOD -55-15truments, 2SC2655 Silicon NPN Epitaxial Type 2SA1020 2SC2655

    2SC2655 Silicon NPN Epitaxial Type

    Abstract: 2SA1020 2SC2655
    Text: TO SH IBA 2SC2655 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2655 INDUSTRIAL APPLICATIONS POWER SWITCHING APPLICATIONS. • Low Saturation Voltage : VfJE (sat) “ 0.5V (Max.) (If; = lA) • High Speed Switching Time : tgtg^l.O/^s (Typ.)


    OCR Scan     		PDF 2SC2655 2SA1020. 75MAX O-92MOD 2SC2655 Silicon NPN Epitaxial Type 2SA1020 2SC2655