2sc2440
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1463G Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SC2440G • Package • High collector-emitter voltage (Base open) VCEO
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Original
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PDF
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2002/95/EC)
2SB1463G
2SC2440G
2sc2440
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1463G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high breakdown voltage low-noise amplification Complementary to 2SC2440G • Features ue pl d in an c
|
Original
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PDF
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2002/95/EC)
2SB1463G
2SC2440G
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1463G Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SC2440G • Package • High collector-emitter voltage (Base open) VCEO
|
Original
|
PDF
|
2002/95/EC)
2SB1463G
2SC2440G
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1463G Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SC2440G • Features ■ Package • High collector-emitter voltage (Base open) VCEO
|
Original
|
PDF
|
2002/95/EC)
2SB1463G
2SC2440G
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1463G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high breakdown voltage low-noise amplification Complementary to 2SC2440G • Package • High collector-emitter voltage (Base open) VCEO
|
Original
|
PDF
|
2002/95/EC)
2SB1463G
2SC2440G
|