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    2SC235 Search Results

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    2SC235 Price and Stock

    NEC Electronics Group 2SC2351-T1B

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    Bristol Electronics 2SC2351-T1B 3,728 7
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    Quest Components 2SC2351-T1B 1,404
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    2SC2351-T1B 1,392
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    2SC2351-T1B 654
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    NEC Electronics Group 2SC2351T1B

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    Bristol Electronics 2SC2351T1B 818
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    NEC Electronics Group 2SC2351-LF

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    Bristol Electronics 2SC2351-LF 65
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    NEC Electronics Group 2SC2351-T1B(Q)

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    Quest Components 2SC2351-T1B(Q) 16,741
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    NEC Electronics Group 2SC2351-T1B (R2)

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    Quest Components 2SC2351-T1B (R2) 806
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    2SC235 Datasheets (82)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC235 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC235 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC235 Unknown Cross Reference Datasheet Scan PDF
    2SC235 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC235 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC235 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC235 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC2350 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC2350 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SC2350 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC2350 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC2351 NEC HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD Original PDF
    2SC2351 NEC Semiconductor Selection Guide 1995 Original PDF
    2SC2351 NEC Semiconductor Selection Guide Original PDF
    2SC2351 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC2351 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SC2351 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC2351 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    2SC2351 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC2351 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    2SC235 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC2351

    Abstract: marking R2
    Text: DATA SHEET SILICON TRANSISTOR 2SC2351 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • NF 1.5 dB TYP. @ f = 1.0 GHz • MAG 14 dB TYP. @ f = 1.0 GHz PACKAGE DIMENSIONS Units: mm +0.1 0.4 −0.05 2.8±0.2 +0.1 1.5


    Original     		PDF 2SC2351 2SC2351 marking R2

    2sc2358

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SC2358 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High voltage,high speed APPLICATIONS ·Designed for switching-mode power supplies ,CRT scanning,inverters, and other industrial applications


    Original     		PDF 2SC2358 2sc2358

    Untitled

    Abstract: No abstract text available
    Text: 2SC2357 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)700 V(BR)CBO (V)1.0k I(C) Max. (A)10 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2SC2357

    Untitled

    Abstract: No abstract text available
    Text: 2SC2351 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)12è V(BR)CBO (V)25 I(C) Max. (A)70m Absolute Max. Power Diss. (W)150m Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition)15


    Original     		PDF 2SC2351

    Untitled

    Abstract: No abstract text available
    Text: 2SC2352L Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)30 I(C) Max. (A)30m Absolute Max. Power Diss. (W)250m Minimum Operating Temp (øC) Maximum Operating Temp (øC)125õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


    Original     		PDF 2SC2352L

    Untitled

    Abstract: No abstract text available
    Text: 2SC235 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)100 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)1.8 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0mØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.20Ž


    Original     		PDF 2SC235 Freq120M

    Untitled

    Abstract: No abstract text available
    Text: 2SC2359 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)450 I(C) Max. (A)4.0 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2SC2359 time300nÃ

    Untitled

    Abstract: No abstract text available
    Text: 2SC2353L Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)30 I(C) Max. (A)30m Absolute Max. Power Diss. (W)250m Minimum Operating Temp (øC) Maximum Operating Temp (øC)125õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


    Original     		PDF 2SC2353L

    Untitled

    Abstract: No abstract text available
    Text: 2SC2353 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)30 I(C) Max. (A)50m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)125õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


    Original     		PDF 2SC2353

    2SA1424

    Abstract: NEC 2532 276-137 2SA1978 2SC2351 NPN transistor mhz s-parameter 2sc2351 equivalent
    Text: DATA SHEET PRELIMINARY DATA SHEET Silicon Transistor 2SA1978 PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER FEATURES High fT _0.2 2.8+ Equivalent NPN transistor is the 2SC2351. • Alternative of the 2SA1424. _0.2 2.9+ Symbol Rating Unit Collector to Base Voltage


    Original     		PDF 2SA1978 2SC2351. 2SA1424. 2SA1424 NEC 2532 276-137 2SA1978 2SC2351 NPN transistor mhz s-parameter 2sc2351 equivalent

    2SC2351

    Abstract: RF TRANSISTOR 10GHZ low noise 10GHz mixer 10GHz RF mixer marking r2 RF TRANSISTOR 10GHZ RF POWER TRANSISTOR NPN UHF transistor GHz rf ghz transistor marking r3 RF TRANSISTOR
    Text: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2351 DESCRIPTION •Low Noise NF = 1.5 dB TYP. ; @ f = 1 GHz ·High Maximum Available Gain MAG = 14 dB TYP. ; @ f = 1 GHz APPLICATIONS ·Designed for use as UHF oscillators and a UHF mixer in a


    Original     		PDF 2SC2351 S21e2 2SC2351 RF TRANSISTOR 10GHZ low noise 10GHz mixer 10GHz RF mixer marking r2 RF TRANSISTOR 10GHZ RF POWER TRANSISTOR NPN UHF transistor GHz rf ghz transistor marking r3 RF TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: 2SC2358 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)800 V(BR)CBO (V)1.0k I(C) Max. (A)10 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2SC2358

    Untitled

    Abstract: No abstract text available
    Text: 2SC2354 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)250 V(BR)CBO (V)300 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)1.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2SC2354 Freq10M

    Untitled

    Abstract: No abstract text available
    Text: 2SC2356 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)500 I(C) Max. (A)10 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2SC2356

    2sc2358

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification 2SC2358 Silicon NPN Power Transistors • DESCRIPTION ·With TO-3 package ·High voltage,high speed APPLICATIONS ·Designed for switching-mode power supplies ,CRT scanning,inverters, and other industrial applications


    Original     		PDF 2SC2358 2sc2358

    2SC2353

    Abstract: VCB10
    Text: NEC NPN SILICON TRANSISTOR ELECTRON DEVICE DESCRIPTION The 2SC2353 is specially designed for use as VH F and UHF mixer in a tuner of T V receiver. The influence of mirror PACKAGE DIMENSIONS effect is little by balanced base. FEATURES in millimeters inches


    OCR Scan     		PDF 2SC2353 f-900 VcE-10 VCB10

    Untitled

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR 2SC2351 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS • NF 1.5 dB TY P. ' f = 1 .0 G H z M AG 14 dB TV P. • f = 1.0 GHz in millimeters ABSOLUTE M AXIM UM RATINGS { T ,« 2 5 ° C


    OCR Scan     		PDF 2SC2351

    transistor eb 2030

    Abstract: 2SC2350
    Text: 2SC2350 High Frequency Low Noise Amplifier NPN Silicon Epitaxial Transistor PACK A G E D IM E N S IO N S in m illim eters inches • Low Noise Figure: N F = 2 .3 d B T Y P . (f=500M H z) • High Maximum Available Gain: M AG = 17dB TY P . (f= 500M H z) z.5 ’ § ?


    OCR Scan     		PDF 2SC2350 transistor eb 2030 2SC2350

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC2351 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • NF 1.5 dB TYP. f= 1.0 GHz * MAG 14 dB TYP. f= 1.0 GHz PACKAGE DIMENSIONS Units: mm ABSOLUTE MAXIMUM RATINGS T a = 25 °C Collector to Base Voltage


    OCR Scan     		PDF 2SC2351

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC2351 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • NF • MAG 1.5 dB TYP. @ f = 1.0 GHz PACKAGE DIMENSIONS 14 dB TYP. @ f = 1.0 GHz U nits: m m 2 .8 ± 0.2 1.5 "3- Ò ABSOLUTE MAXIMUM RATINGS (T a = 25 °C)


    OCR Scan     		PDF 2SC2351

    PR240

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC2351 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • NF 1.5 dB TYP. f = 1.0 G H z * M AG 14 dB TYP. f = 1.0 G H z PACKAGE DIMENSIONS Units: mm 2 .8± 0.2 1.5 .0.65-0-5 ABSOLUTE MAXIMUM RATINGS (T a = 25 °C)


    OCR Scan     		PDF 2SC2351 PR240

    2SC2352

    Abstract: SC-43A transistor GC
    Text: NEC NPN SILICON TRANSISTOR ELECTRON DEVICE DESCRIPTION \ 2SC2352 The 2SC2352 is an NPN silicon epitaxial transistor intended PACKAGE DIMENSIONS for use as a VHF mixer in a tuner of a TV receiver. The in millimeters inches device features are high conversion gain and low distortion.


    OCR Scan     		PDF 2SC2352 2SC2352 sc-43a to-92 SC-43A transistor GC

    jb transistor

    Abstract: 2SC2356 374C
    Text: h'UdlTSU niC R O ELEC T R O N IC S "37 DE | 3 7 4 ‘ì 7 t . E □□□1751 FMICROELECTRONICS U JIT S U 2SC2356 SILICON HIGH SPEED TRIPLE DIFFUSED ^ NPN POWER TRANSISTOR 10 AMP, 400 VOLT r- J3-/J 3 7 4 9 7 1>2 FUJITSU MICROELECTRONICS 37C 01751 ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF 374T7bE 2SC2356 O-220 jb transistor 2SC2356 374C

    2SC2351

    Abstract: No abstract text available
    Text: 2SC2351 High Frequency Low Noise Amplifier NPN Silicon Epitaxial Transistor PACKAGE DIMENSIONS in m illim eters inches • Low Noise Figure: NF=1.5 dB TYP. (f= 1.0 GHz) • High Maximum Available Gain: MAG=14dB TYP. (f—1.0 GHz) 2.5 *8 ! {0 098) 0 5 l 8f|


    OCR Scan     		PDF 2SC2351 2SC2351