A940A
Abstract: 2SA940A A940 2SC2073A
Text: 2SA940A TOSHIBA Transistor Silicon PNP Triple Diffused Type PCT Process 2SA940A Power Amplifier Applications Vertical Output Applications • Unit: mm Complementary to 2SC2073A Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage
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2SA940A
2SC2073A
SC-67
A940A
2SA940A
A940
2SC2073A
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2SA940
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SC2073 Features • • • • • • Halogen free available upon request by adding suffix "-HF" Wide safe Operating Area.
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2SC2073
2SA940
O-220
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2SA940
Abstract: 2SC2073
Text: JMnic Product Specification 2SA940 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SC2073 APPLICATIONS ・Power amplifier applications ・Vertical output applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to
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2SA940
O-220
2SC2073
-120V
2SA940
2SC2073
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2SC2073
Abstract: 2sc2073 amplifier transistor 2sc2073 2SA940
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2073 DESCRIPTION •Collector-Emitter Breakdown Voltage:V BR CEO= 150V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SA940 APPLICATIONS ·Power amplifier applications.
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2SC2073
2SA940
500mA;
500mA
2SC2073
2sc2073 amplifier
transistor 2sc2073
2SA940
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SC2073 TRANSISTOR NPN TO-220 1. BASE FEATURES z Wide safe Operating Area. z Complementary to 2SA940 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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O-220
2SC2073
O-220
2SA940
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2SA940
Abstract: 2SA940 equivalent 2SC2073
Text: PNP 2SA940 EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT TO-220 ! Complementary to 2SC2073 ABSOLUTE MAXIMUM RATING Ta=25°c c Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC)
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2SA940
O-220
2SC2073
-120V
-50mA
2SA940
2SA940 equivalent
2SC2073
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2SC2073
Abstract: 2SA940
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SC2073 TRANSISTOR NPN TO-220 1. BASE FEATURES z Wide safe Operating Area. z Complementary to 2SA940 2. COLLECTOR 3. EMITTER 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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O-220
2SC2073
O-220
2SA940
2SC2073
2SA940
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2SC2073
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SC2073 TRANSISTOR NPN TO-220 1. BASE FEATURES Power dissipation PCM: 2. COLLECTOR 1.5 W (Tamb=25℃) 3. EMITTER Collector current 1.5 A ICM: Collector-base voltage
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O-220
2SC2073
O-220
500mA
500mA,
2SC2073
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mx 2sb834
Abstract: 2sb834 mx LB125 2sa940 2sc2073 MJE13005 tip41c pins tip127 data REG lm317 IC LM317 DATA SHEET 2SC2073
Text: TO-220 PACKAGE MX MICROELECTRONICS ● Applied widely for TV,Av,power amplifiers power drive e.c.t. Pd TYPE NPN *Tc= OR 25℃ W PNP 2SA940 2SC2073 2SD880 2SB834 2SD313 BD941 BD949 BD950 BU406 BUT11 BUT11A PNP NPN NPN PNP NPN NPN NPN PNP NPN NPN NPN ICBO
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O-220
2SA940
2SC2073
2SD880
2SB834
2SD313
BD941
BD949
BD950
BU406
mx 2sb834
2sb834 mx
LB125
2sa940 2sc2073
MJE13005
tip41c pins
tip127 data
REG lm317
IC LM317 DATA SHEET
2SC2073
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2SC2073
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2073 Preliminary NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION The UTC 2SC2073 is an NPN silicon power transistors, it uses UTC’s advanced technology to provide customers with high collector
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2SC2073
2SC2073
2SC2073L-
2SC2073G-TA3-T
O-220
QW-R221-021
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2SC2073
Abstract: transistor 2sc2073
Text: 2SC2073 NPN TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER Features 1 2 3 Wide safe Operating Area. Complementary to 2SA940 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Dimensions in inches and (millimeters) Paramenter Value Units
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2SC2073
O-220
O-220
2SA940
transistor 2sc2073
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A940A
Abstract: No abstract text available
Text: 2SA940A TOSHIBA Transistor Silicon PNP Triple Diffused Type PCT Process 2SA940A Power Amplifier Applications Vertical Output Applications • Unit: mm Complementary to 2SC2073A Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage
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2SA940A
2SC2073A
SC-67
A940A
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Untitled
Abstract: No abstract text available
Text: 2SC2073 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)150 V(BR)CBO (V)150 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)1.5 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10uØ @V(CBO) (V) (Test Condition)120 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)500m
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2SC2073
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2SA940
Abstract: 2SA940 equivalent 2SC2073
Text: SavantIC Semiconductor Product Specification 2SA940 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC2073 APPLICATIONS ·Power amplifier applications ·Vertical output applications PINNING PIN DESCRIPTION 1 Emitter 2
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2SA940
O-220
2SC2073
-120V
2SA940
2SA940 equivalent
2SC2073
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2SA940
Abstract: 2SA940 equivalent 2SC2073
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA940 DESCRIPTION •Collector-Emitter Breakdown Voltage : V BR CEO= -150V(Min) ·DC Current Gain : hFE= 40-140@ IC= -0.5A ·Complement to Type 2SC2073 APPLICATIONS ·Designed for use in general purpose power amplifier ,
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2SA940
-150V
2SC2073
-50mA
-120V
2SA940
2SA940 equivalent
2SC2073
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transistor 2SA
Abstract: 2SA940 AC550 2sa 940 2SC2073
Text: S / U D > P N P = * # « * - t t f é h ^ : / 5; 3 ^ SILICON PNP TRIPLE DIFFUSED M ESA TRANSISTOR o nummm O MflilpJttiaffl 940 2SA Unit in m m 0Z.6±O.2 o Power Amplifier o Vertical Output 2302073 Applications Applications t ^ i' '/ >J Complementary to 2SC2073
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2SC2073
220AB
AC550
-120v,
-500mA,
IHJ11
-500ma
2sa940
transistor 2SA
2SA940
AC550
2sa 940
2SC2073
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2SA940A
Abstract: 2SC2073A
Text: TOSHIBA 2SA940A TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2SA940A Unit in mm PO W ER AM PLIFIER APPLICATIONS VERTICAL OUTPUT APPLICATIONS 10 ± 0.3 03.2 ± 0.2 I- "L - • 2.7± 0.2 Complementary to 2SC2073A
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2SA940A
2SC2073A
SC-67
2SA940A
2SC2073A
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2SA940
Abstract: Z10A1 2sc2073
Text: SILICON PNP TRIPLE DIFFUSED TYPE 2SA940 Unit in nan POWER A M P L I F I E R 10.31ÍAX. 0:s.6±az AP P LIC A TIO N S . V E R T IC A L OUTPUT A P P L IC A T IO N S - FEATURES: . Complementary to 2SC2073 MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING
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2SA940
2SC2073
Z-10A1A
-120V,
-500mA
-500mA,
-50mA
2SA940
Z10A1
2sc2073
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2sa940 2sc2073
Abstract: 2SA940
Text: SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm POVER A M P L I F I E R A P P L IC A T IO N S . VE R TIC A L A P P L IC A T IO N S . O U T PU T j a 3 M A X . 0 1 .tS zO .ll c r f ir i FEATURES: «Ô . Complementary to 2SC2073 i_ i . 5 MAX . MAXIMUM RATINGS (Ta=25°C)
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2SC2073
AC55C
-120V
-500mA
-500mA
-50niA
2SA940
2sa940 2sc2073
2SA940
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2SA940
Abstract: 2SC2073 2SA94 PEC 120V
Text: ÆàMOS PEC PNP SILICON POWER TRANSISTORS PNP 2SA940 2SA940 transistor is designed for use in general purpose power amplifier,vertical output application FEATURES: * Collector-Emitter Voltage VCEO= 150V Min * DC Current Gain hFE= 40-140@lc= 500mA * Complementary NPN 2SC2073
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2SA940
500mA
2SC2073
2SC2073
2SA94
PEC 120V
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2SC2804
Abstract: 2SC517 2Sd428 2sc1279 2SC503 2SC1515 2SC1923 2sc1907 2SC1047 2SC1809
Text: m s T y p e No. tt € Manuf. = » SANYO X S TOSHIBA 2SC 778 / = # 2SC51" 2 SC 779 3K 3E 2SC2073 2SC 780A Ä 2 * 2 SC 780AGTM X £ 2SC2551 * 2SC 781 S 9 2SC503 * 2SC 782 X 2SC 782A K S 2SC782 * - » * 2SC 783 , * 2SC 784 * 2SC 785 „ * * * 2 SC 786 * 2SC 787
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2SC51T
2SC2166
2SC2073
2SD859A
2SC3968
2SC780ACG)
2SC1279
2SC1515
2SC1573
2SC1914A
2SC2804
2SC517
2Sd428
2SC503
2SC1923
2sc1907
2SC1047
2SC1809
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SA940A TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 7 <; A Q A H A Unit in mm POWER AMPLIFIER APPLICATIONS VERTICAL OUTPUT APPLICATIONS 101 0.3 • ^3.2 ±0.2 2_,7±g Complementary to 2SC2073A MAXIMUM RATINGS (Ta=25°C) SYMBOL RATING
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2SA940A
2SC2073A
SC-67
2-10R1A
100xlOOx2mmAf
50X50X2mmA£
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Untitled
Abstract: No abstract text available
Text: TOSHIBA {DISCRETE/OPTO} 9097250 T O S H IB A St. DE J TOTTaSO Q0074t.ñ S 5óC 0 7 4 6 8 D IS C R E T E /O P T O 0 r-3 3 -0 ? 2SC2073 SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) Unit in mm PCWER A M P LIF IE R APPLICATIO NS. 1Q3M AX. V E R TIC A L OUTPUT APPLICATIO NS.
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Q0074t.
2SC2073
2SA940
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2SA940
Abstract: No abstract text available
Text: TO SH IBA TOSHIBA TRANSISTOR 2SA940 SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2SA940 Unit in mm POWER AMPLIFIER APPLICATIONS VERTICAL OUTPUT APPLICATIONS ^ 3.6 ± 0.2 10.3MAX iT * 7 U .C • • Complementary to 2SC2073 M AXIM UM RATINGS (Ta = 25°C)
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2SA940
2SC2073
2SA940
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