2SC1584 Search Results

2SC1584 Datasheets (12)

Part	Manufacturer	Description	Datasheet Type	PDF
2SC1584	Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF
2SC1584	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF
2SC1584	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SC1584	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2SC1584	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SC1584	Unknown	Cross Reference Datasheet	Scan	PDF
2SC1584	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
2SC1584	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SC1584	Unknown	The Japanese Transistor Manual 1981	Scan	PDF
2SC1584	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2SC1584	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SC1584	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF

2SC1584 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SA909 Abstract: 2SA908 2SA907 2SC1584 Text: Inchange Semiconductor Product Specification 2SA907/908/909 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2SC1584/1585/1586 APPLICATIONS ·For power switching and general purpose applications PINNING see Fig.2 PIN DESCRIPTION	Original	2SA907/908/909 2SC1584/1585/1586 2SA907 2SA908 2SA909 2SA909 2SA908 2SA907 2SC1584	PDF
2SC1584 Abstract: 2SA907 Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA907 DESCRIPTION •High Power Dissipation: PC= 150W Max. @TC=25℃ ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -100V(Min.) ·Complement to Type 2SC1584 APPLICATIONS ·Designed for amplifier and general purpose applications.	Original	2SA907 -100V 2SC1584 -50mA; -100V; 2SC1584 2SA907	PDF
2SA909 Abstract: 2SA907 2SA908 2SC1584 Text: JMnic Product Specification 2SA907/908/909 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2SC1584/1585/1586 APPLICATIONS ・For power switching and general purpose applications PINNING see Fig.2 PIN DESCRIPTION 1 Base	Original	2SA907/908/909 2SC1584/1585/1586 2SA907 2SA908 2SA909 2SA909 2SA907 2SA908 2SC1584	PDF
2SC1584 Abstract: No abstract text available Text: Inchange Semiconductor Product Specification 2SC1584 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High power dissipation ·High current capability APPLICATIONS ·For audio power amplifier and general purpose applications PINNING see Fig.2	Original	2SC1584 2SC1584	PDF
2SC1584 Abstract: No abstract text available Text: SavantIC Semiconductor Product Specification 2SC1584 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High power dissipation ·High current capability APPLICATIONS ·For audio power amplifier and general purpose applications PINNING see Fig.2	Original	2SC1584 2SC1584	PDF
SK 18752 Abstract: SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751 Text: Bulletin No O03ED0 （May, 2008） SEMICONDUCTORS GENERAL CATALOG ICS TRANSISTORS THYRISTORS DIODES LEDS LE D Diode I C Thyristor Tr a n s i s t o r SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/index.html Warning ● The contents in this document are subject to changes, for improvement and other purposes,	Original	O03ED0 dete7837 H1-O03ED0-0805020NM SK 18752 SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751	PDF
Transistor 2sc1915 Abstract: 2SC1951 2SC1586 2SC1915 2SC1762 2SC1811 2SC1584 2SC1940 Tbb 38 138B Text: - 5 - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English	OCR Scan	2SC1940 2SC1941 2SC1951 150pS Transistor 2sc1915 2SC1951 2SC1586 2SC1915 2SC1762 2SC1811 2SC1584 2SC1940 Tbb 38 138B	PDF
2SC144 Abstract: 2SD466 2sc5266 Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l\|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *	OCR Scan	T258-OMI FAX06 2SC144 2SD466 2sc5266	PDF
2N3055 plastic Abstract: BUT11Af equivalent BU108 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 bdx54d BDX54 BUX98A 2SC140 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Full Pak High Voltage NPN Power Transistor For Isolated Package Applications The BUT11AF was designed for use in line operated switching power supplies in a wide range of end use applications. This device combines the latest state of the art	Original	BUT11AF BUT11AF TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N3055 plastic BUT11Af equivalent BU108 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 bdx54d BDX54 BUX98A 2SC140 BU326 BU100	PDF
transistor rc 3866 Abstract: t 3866 to220 power transistor t 3866 transistor equivalent transistor EQUIVALENT FOR mjf18004 bs170 replacement EIA/transistor rc 3866 pin configuration transistor bd140 TRANSISTOR REPLACEMENT table for transistor transistor cross reference BU108 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF18002 See MJE18002 MJF18004 (See MJE18004) MJF18006 (See MJE18006) MJF18008 (See MJE18008) SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors MJW16212* The MJW16212 is a state–of–the–art SWITCHMODE bipolar power transistor. It	Original	MJF18002 MJE18002) MJF18004 MJE18004) MJF18006 MJE18006) MJW16212 TIP73B TIP74 TIP74A transistor rc 3866 t 3866 to220 power transistor t 3866 transistor equivalent transistor EQUIVALENT FOR mjf18004 bs170 replacement EIA/transistor rc 3866 pin configuration transistor bd140 TRANSISTOR REPLACEMENT table for transistor transistor cross reference BU108	PDF
BU108 Abstract: BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. • •	Original	TIP47, TIP50 MJD47* MJD50* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BU108 BU326 BU100	PDF
D45H11 equivalent replacement Abstract: transistor equivalent book 2SC2073 BDX36 equivalent bd139 equivalent transistor BUT11Af equivalent BU108 334 bdw93c f P6042 2SA818 equivalent transistor mj11028 equivalent Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE16002* MJE16004*  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Transistors *Motorola Preferred Device These transistors are designed for high–voltage, high–speed switching of inductive circuits where fall time and RBSOA are critical. They are particularly well–suited for	Original	MJE16004 MJE16002 MJH16002 Designe32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A D45H11 equivalent replacement transistor equivalent book 2SC2073 BDX36 equivalent bd139 equivalent transistor BUT11Af equivalent BU108 334 bdw93c f P6042 2SA818 equivalent transistor mj11028 equivalent	PDF
tip122 tip127 audio amp Abstract: TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT BD226-BD227 tip122 tip127 audio board D45H111 3904 Transistor BU108 tip120 darlington TIP41 amplifier TIP121 TEXAS Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 Typ @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc	Original	TIP120, TIP125 TIP121, TIP126 TIP122, TIP127 220AB tip122 tip127 audio amp TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT BD226-BD227 tip122 tip127 audio board D45H111 3904 Transistor BU108 tip120 darlington TIP41 amplifier TIP121 TEXAS	PDF
MJL21194 equivalent Abstract: MJL21193 equivalent bux48a equivalent 2N6107 equivalent BU108 MJ4502 pair BD140 npn transistor MJL21194 2N5981 pnp transistor 2N3055 typical applications Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJL21193* NPN MJL21194* Silicon Power Transistors The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.	Original	MJL21193 MJL21194 MJL21193* MJL21194* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A MJL21194 equivalent MJL21193 equivalent bux48a equivalent 2N6107 equivalent BU108 MJ4502 pair BD140 npn transistor MJL21194 2N5981 pnp transistor 2N3055 typical applications	PDF

BU108 Abstract: 2SC7 RCA1C03 to-126 HIGH SPEED SWITCHING transistor BDX54 2SC1943 2SC1419 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD437 BD441 Plastic Medium Power Silicon NPN Transistor . . . for amplifier and switching applications. Complementary types are BD438 and BD442. 4.0 AMPERES POWER TRANSISTORS NPN SILICON CASE 77–08 TO–225AA TYPE ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ	Original	BD438 BD442. BD437 BD441 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BU108 2SC7 RCA1C03 to-126 HIGH SPEED SWITCHING transistor BDX54 2SC1943 2SC1419 BU326 BU100	PDF
mje13009 equivalent Abstract: buv48 equivalent TRANSISTOR REPLACEMENT table for transistor BUV47 BD241A MOTOROLA BU108 TIP33C equivalent TIP41C EQUIVALENT BD4202 buv48 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV48 BUV48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 150 WATTS The BUV48/BUV48A transistors are designed for high–voltage, high–speed, power	Original	BUV48/BUV48A BUV48 BUV48A TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B mje13009 equivalent buv48 equivalent TRANSISTOR REPLACEMENT table for transistor BUV47 BD241A MOTOROLA BU108 TIP33C equivalent TIP41C EQUIVALENT BD4202	PDF
ST T4 3580 Abstract: BU108 bdw93c applications transistor bd136 in dpak packaging 2SC103 ir411 TRANSISTOR BC 384 BDX54 2SB56 IC 714 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJD243* Plastic Power Transistor DPAK For Surface Mount Applications *Motorola Preferred Device . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO sus = 100 Vdc (Min) @ IC = 10 mAdc	Original	MJD243* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 ST T4 3580 BU108 bdw93c applications transistor bd136 in dpak packaging 2SC103 ir411 TRANSISTOR BC 384 BDX54 2SB56 IC 714	PDF
TRANSISTOR 2SC2366 TO220 Abstract: K 3569 7.v equivalent 2N3792 MOTOROLA 2N3055 transistor equivalent BU108 mjf18204 equivalent TRANSISTOR 2SC1669 motorola AN485 RCA1C07 D45H111 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18204 MJF18204  Data Sheet SWITCHMODE NPN Designer's Bipolar Power Transistor for Electronic Light Ballast and Switching Power Supply Applications POWER TRANSISTORS 5 AMPERES 1200 VOLTS 35 and 75 WATTS The MJE/MJF18204 have an application specific state–of–the–art die dedicated to	Original	MJE/MJF18204 MJE18204 MJF18204 POW32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TRANSISTOR 2SC2366 TO220 K 3569 7.v equivalent 2N3792 MOTOROLA 2N3055 transistor equivalent BU108 mjf18204 equivalent TRANSISTOR 2SC1669 motorola AN485 RCA1C07 D45H111	PDF
bu806 REPLACEMENT Abstract: k 3569 BU108 2SD211 BU806 NSP2100 TL MJE2955T 2SC1943 2SC1419 BU326 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU806 NPN Darlington Power Transistor 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS This Darlington transistor is a high voltage, high speed device for use in horizontal deflection circuits in TV’s and CRT’s.	Original	220AB BU806 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C bu806 REPLACEMENT k 3569 BU108 2SD211 BU806 NSP2100 TL MJE2955T 2SC1943 2SC1419 BU326	PDF
MJE15020 Abstract: DTS423 mje15033 replacement 2SC243 BD388-5 2SC1826 BD263 2SC1903 SE9302 2SA698 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE340 Plastic Medium Power NPN Silicon Transistor 0.5 AMPERE POWER TRANSISTOR NPN SILICON 300 VOLTS 20 WATTS . . . useful for high–voltage general purpose applications. • Suitable for Transformerless, Line–Operated Equipment	Original	MJE340 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 MJE15020 DTS423 mje15033 replacement 2SC243 BD388-5 2SC1826 BD263 2SC1903 SE9302 2SA698	PDF
pin configuration NPN transistor BD679 Abstract: 2SC101 pin configuration NPN transistor BD 677 BU108 TIP120 equivalent 2SC7 2N6052 equivalent 2SC558 BDX54 2SC1943 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD675 BD675A BD677 BD677A BD679 BD679A BD681* Plastic Medium-Power Silicon NPN Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 Min @ IC = 1.5 and 2.0 Adc	Original	BD675, BD676, BD675 BD675A BD677 BD677A BD679 BD679A BD681* TIP73B pin configuration NPN transistor BD679 2SC101 pin configuration NPN transistor BD 677 BU108 TIP120 equivalent 2SC7 2N6052 equivalent 2SC558 BDX54 2SC1943	PDF
2N5686 motorola Abstract: 2N5685 equivalent BU108 MJ15024 MJ15025 AUDIO AMPLIFIER 2N5686 2SA49 2SC140 2N5685 MJ1000 NSP2100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP 2N5684 High-Current Complementary Silicon Power Transistors NPN 2N5685 2N5686* . . . designed for use in high–power amplifier and switching circuit applications. • High Current Capability — IC Continuous = 50 Amperes.	Original	2N5684 2N5685 2N5686* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5686 motorola 2N5685 equivalent BU108 MJ15024 MJ15025 AUDIO AMPLIFIER 2N5686 2SA49 2SC140 MJ1000 NSP2100	PDF
BU108 Abstract: 2SA1046 driver amplifier tip31 TRANSISTOR BDX54 MJE5190 2SB56 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5191 2N5192* Silicon NPN Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to PNP 2N5194, 2N5195. *Motorola Preferred Device 4 AMPERE POWER TRANSISTORS	Original	2N5194, 2N5195. 2N5191 2N5192* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BU108 2SA1046 driver amplifier tip31 TRANSISTOR BDX54 MJE5190 2SB56 BU326 BU100	PDF
BDV65B equivalent Abstract: buv48 equivalent BU108 tip127 pin details 2SD424 BDX54 BU326 BU100 mje340 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BDV65B PNP BDV64B Complementary Silicon Plastic Power Darlingtons . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain HFE = 1000 min. @ 5 Adc • Monolithic Construction with Built–in Base Emitter Shunt Resistors	Original	BDV65B BDV64B TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C BDV65B equivalent buv48 equivalent BU108 tip127 pin details 2SD424 BDX54 BU326 BU100 mje340	PDF

2SC1584 Search Results

2SC1584 Datasheets (12)

2SC1584 Datasheets Context Search

2SA909

2SC1584

2SA909

2SC1584

2SC1584

SK 18752

Transistor 2sc1915

2SC144

2N3055 plastic

transistor rc 3866

BU108

D45H11 equivalent replacement

tip122 tip127 audio amp

MJL21194 equivalent

BU108

mje13009 equivalent

ST T4 3580

TRANSISTOR 2SC2366 TO220

bu806 REPLACEMENT

MJE15020

pin configuration NPN transistor BD679

2N5686 motorola

BU108

BDV65B equivalent