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    2SC LOW NOISE Search Results

    2SC LOW NOISE Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DM18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, DFN4 Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DG18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, WCSP4E Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR3RM28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 300 mA, DFN4C Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    2SC LOW NOISE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA1083

    Abstract: 2sa1084 2SA1085
    Text: 2SA1083,2SA1084,2SA1085 Silicon PNP Epitaxial HITACHI Application • Low frequency low noise amplifier • Complementary pair with 2SC 2545, 2SC 2546 and 2SC 2547 Outline T O -9 2 1 1. E m itte r 2. Collector 3. B a s e 126 2SA1083, 2SA1084, 2SA1085 Absolute Maximum Ratings (Ta = 25°C)


    OCR Scan     		PDF 2SA1083 2SA1084 2SA1085 2SA1083, 2SA1084, 2SA1085

    2sc 1203

    Abstract: 2Sc1923 equivalent 2SK241 equivalent 2sa 1300 equivalent 2SC 1902 2sc2240 equivalent 2sc1815 equivalent 2SC 1207 N1408 2SC1815 NPN SOT-23
    Text: 5. List of Lead Type and Surface Mount Type Interchangeable Products CTransistors for Low Frequency Small Signal Equipm ent> TO-92 VCEO k V (mA) N PN 50 150 2SC 1815 50 MINI PNP 2SA 1015 N PN 2SC 2458 SSM PNP 2S A 1048 2SA 1015L 2SC 2458L 2SA 1048L 100 2SC2240


    OCR Scan     		PDF 1815L 2SC2240 2SC1627 2SC752G SC-70) SC-59) 2SC2713 2SC4210 2SA1621 2SC4209 2sc 1203 2Sc1923 equivalent 2SK241 equivalent 2sa 1300 equivalent 2SC 1902 2sc2240 equivalent 2sc1815 equivalent 2SC 1207 N1408 2SC1815 NPN SOT-23

    C 2021M

    Abstract: No abstract text available
    Text: h ~7 > y 7 s £ / J ransistors 2SC2021LN/2SC2021MLN 2SC 2021LN 2SC 2021M LN i t r.$ * sS T \ r f \ s —? B NPN y ' J =1> b 7 > y z $ Epitaxial Planar NPN Silicon Transistors Freq. Low Noise Amp. • ÿfjg ^J -^H /D im e n s io n s Unit : mm) 1) VcE(sat)#,' i& '-'o


    OCR Scan     		PDF 2SC2021LN/2SC2021MLN 2021LN 2021M 2SC2021LN/2SC2021MLN C 2021M

    2SC605

    Abstract: 2SC606
    Text: NEC SILICON TRANSISTORS ELECTRON DEVICE 2 SC 605 B , 2SC606(B) FOR TV TUNER 2SC 606(B ) : VHF RF AMPLIFIER 2SC 605(B ) : VHF MIXER NPN SILICON EPITAXIAL TRANSISTOR FEATURES PACKAGE D IM EN SIO N S (U nit : mm) • Low NF high Gpe. NF = 2.0 dB TY P . Gpe = 24 dB TY P . <f = 200 MHz)


    OCR Scan     		PDF 2SC606 606IB 2SC605

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm The 2SC 3587 is an NPN epitaxial transistor designed for lownoise am plification at 0.5 to 6.0 GHz. This transistor has low-noise


    OCR Scan     		PDF 2SC3587

    2SA1031

    Abstract: 2SA1032
    Text: 2SA1031,2SA1032 Silicon PNP Epitaxial HITACHI Application • Low frequency low noise amplifier • Complementary pair with 2SC 458 LG and 2 S C 2310 Outline TO-92 (1 ) 1. Emitter 2. Collector 3. Base 118 2SA1031, 2SA1032 Absolute Maximum Ratings (Ta = 25°C)


    OCR Scan     		PDF 2SA1031 2SA1032 2SC458 2SC2310 2SA1031, 2SA1032

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC2240 TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE PCT PROCESS 2SC 2240 LOW NOISE AUDIO AMPLIFIER APPLICATIONS The 2SC2240 is a transistor for low frequency and low noise applications. This device is designed to lower noise figure in the region of low signal source impedance, and to lower the pulse


    OCR Scan     		PDF 2SC2240 2SC2240

    2SC3779

    Abstract: U40j 2SC3779 transistor
    Text: Ordering number : EN 1954C 2SC 3779 NPN Epitaxial Planar Silicon Transistor S A \ Y O i UHF Low-Noise Amp, Wide-Band Amp Applications Applications . OHF low-noise amplifiers,wide-band amplifiers Features . Small noise figure: NF=1.5dB typ f=0.9GHz . . High power gain: MAG*l4dB typ(f=0.9GHz).


    OCR Scan     		PDF 1954C 2SC3779 SC-51 rO-92 3C-43 2SC3779 U40j 2SC3779 transistor

    2SC 3531

    Abstract: No abstract text available
    Text: T O SH IB A 2SC5092 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC 5092 Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Low Noise Figure, High Gain. NF= 1.8dB, |S2 1 el2= 9.5dB f=2GHz MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC


    OCR Scan     		PDF 2SC5092 2SC 3531

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC5085 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC 508 5 V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure, High Gain. N F =l.ldB , |S2 1 el2= lldB f=lGHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage


    OCR Scan     		PDF 2SC5085 V7-j250

    1951b

    Abstract: 2SC3778 transistor UHF Marking TRANSISTOR 777
    Text: ,| O rd e rin g n u m b e r :EN 1 9 5 l l T 2SC 3778 NPN Epitaxial Planar Silicon Transistor S A N Y O i UHF Low-Noise Amp, Wide-Band Amp Applications Applications . UHF low-noise amplifieres,wide-band amplifiers Features . Small noise figure: NF=2.2dB typ f=0.9GHz .


    OCR Scan     		PDF 1951B 2SC3778 2034/2034A SC-43 7tlt17D7b 1951b 2SC3778 transistor UHF Marking TRANSISTOR 777

    2SC5316

    Abstract: No abstract text available
    Text: TO SH IBA TENTATIVE 2SC5316 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC 5316 VH F-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16 GHz series • • U nit in mm 2.1 ±0.1 I m —r 1 o +| +1 m O o — Low Noise Figure : NF = 1.3 dB (f = 2 GHz)


    OCR Scan     		PDF 2SC5316 2SC5316

    2SC5316

    Abstract: No abstract text available
    Text: 2SC5316 TO SH IBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC 5316 VH F-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16 GHz series U nit in mm 2.1 ±0.1 ,1.25 ± 0.1, • • —r m I +| +1 om O o — Low Noise Figure : NF = 1.3 dB (f = 2 GHz)


    OCR Scan     		PDF 2SC5316 2SC5316

    3722K

    Abstract: No abstract text available
    Text: K "7 > y $ / T ransistors 2SC3722K 2SC 3722K I k°$ * '> 5 K NPN BW EßH /High Voltage Low Freq. Low Noise Amp. Epitaxial Planar Super Mini-Mold NPN Silicon Transistor h y 1 ¡ s w a t 5* 2) * V c i eo = 1 2 0V ) •(N F=0.2dB Typ.) 1.9 C.950.95 3) 2SA1455K


    OCR Scan     		PDF 2SC3722K 3722K 2SA1455K 2SA1455K. 2SC3722K Fig12 3722K

    Untitled

    Abstract: No abstract text available
    Text: HITACHI 2SC 4900-Silicon NPN Bipolar Transistor Application M P A K -4 VHF & UHF wide band amplifire 2 Features • High gain bandwidth product f j = 9 GHz typ • High gain, low noise figure PG = 13.0 dB typ, NF = 1.2 dB typ at f = 900 MHz 4 1. 2. 3.


    OCR Scan     		PDF 2SC4900

    BFQ60

    Abstract: BI10-M30T-AP6X Q62702-F655 bfq 85 Siemens Microwave S12PS2
    Text: 2SC D m fl23Sb05 QQQ4b43 T H S I E G — *- — — • » « * w r i u u _ Low Noise NPN Silicon Microwave Transistor BFQ 60 up to 2 GHz_T ?sr. D '7 ^ 3 / - < 3 3 _ SIEMENS AKTIENGESELLSCHAF BFQ 60 is a bipolar silicon NPN microwave transistor in hermetically sealed metal


    OCR Scan     		PDF fl23Sb05 QQ04b43 -TZ3/-33_ Q62702-F655 fl23SbOS BFQ60 BFQ60 BI10-M30T-AP6X Q62702-F655 bfq 85 Siemens Microwave S12PS2

    TRANSISTOR D 570

    Abstract: BF 145 transistor transistor bf
    Text: 2SC D • Ö23SLQS 0GQ4S23 Q H S I E G r - 3 t-rs ~ BF 568 PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF BF 5 6 8 is a PNP silicon planar transistor with passivated surface in TO 2 3 6 plastic package 2 3 A 3 DIN 4.1869 . The transistor is particularly suitable for use in low-noise gain-controlled


    OCR Scan     		PDF 23SLQS 0GQ4S23 TRANSISTOR D 570 BF 145 transistor transistor bf

    Transistor BFR 35

    Abstract: Transistor BFR 38 Transistor BFR Transistor BFR 97 K 2056 transistor Transistor BFR 39 transistor npn d 2058 transistor K 2056 Transistor BFR 98 Transistor BFR 91
    Text: 2SC D • fl23SbOS Q0QMb74 T H S I E G NPN Silicon Transistor for Low-Noise RF Broadband Amplifiers and High-Speed Switching Applications BFR 35 A BFR 35 AR 0 '7 Z3 I - / S 2 N 6619 SIEMENS AKTIENGESELLSCHAF ’4 BFR 35 A is an epitaxial NPN silicon planar RF transistor in TO 2 3 6 plastic package


    OCR Scan     		PDF fl23SbOS Q0QMb74 2N6619, 023SbOS 00G4b77 BFR35A 2N6619 Transistor BFR 35 Transistor BFR 38 Transistor BFR Transistor BFR 97 K 2056 transistor Transistor BFR 39 transistor npn d 2058 transistor K 2056 Transistor BFR 98 Transistor BFR 91

    Transistor BFR 97

    Abstract: Transistor BFR 39 transistor npn d 2058 Transistor BFR 35 Transistor BFR 98 Transistor BFR 38 Transistor BFR 80 Transistor BFR 91 K 2056 transistor Transistor BFR 79
    Text: 2SC D • fl23SbOS Q0QMb74 T H S I E G NPN Silicon Transistor for Low-Noise RF Broadband Amplifiers and High-Speed Switching Applications BFR 35 A BFR 35 AR 0 '7 Z3 I - / S 2 N 6619 SIEMENS AKTIENGESELLSCHAF ’4 BFR 35 A is an epitaxial NPN silicon planar RF transistor in TO 2 3 6 plastic package


    OCR Scan     		PDF fl23SbOS Q0QMb74 2N6619, 023SbOS 00G4b77 BFR35A 2N6619 Transistor BFR 97 Transistor BFR 39 transistor npn d 2058 Transistor BFR 35 Transistor BFR 98 Transistor BFR 38 Transistor BFR 80 Transistor BFR 91 K 2056 transistor Transistor BFR 79

    TRANSISTOR MARKING YB 1L

    Abstract: 2SK 2SA 2SC equivalent ON 4497 HF transistor 1B01F transistor 2sc 1586 i203 transistor transistor 2sk power amp transistor bc 2sk transistor 2sk 70 TBC846
    Text: 2. List of Principal Characteristics of Transistors 2. List of Principal Characteristics of Transistors 2.1 Small Super Mini Type SSM < T ra n s is to r for G eneral Purpose, Low Frequency E q u ip m e n t> VCEtMÜ MAX. hFE Type No. V CEO (V) NPN PNP 2SC 4738


    OCR Scan     		PDF 2SC4841 OT89/SC62) TRANSISTOR MARKING YB 1L 2SK 2SA 2SC equivalent ON 4497 HF transistor 1B01F transistor 2sc 1586 i203 transistor transistor 2sk power amp transistor bc 2sk transistor 2sk 70 TBC846

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE 2SC 5315 T O SH IBA TRANSISTOR H MT SILICON NPN EPITAXIAL PLANAR TYPE f ^ V 1• H5T V H F -U H F B A N D LOW NOISE AM PLIFIER APPLICATIONS U n it in mm 3 f l. M T fl fl 1 2 M IC R O W A V E CHARACTERISTICS Ta = 25°C CHARACTERISTIC Transition Frequency


    OCR Scan     		PDF 2SC5315 --15mA,

    zo 107 NA P 611

    Abstract: TRANSISTOR 2SC 2026 642p 2sc 643
    Text: 2SC D m fl23Sb05 QQQ4b43 T « S I E G — *- — — •» «* w n u u Low Noise NPN Silicon Microwave Transistor UJ? t 0 2 G H z ~ ?<5r. n^643 _ BFQ 60 D '7 ^ '3 l ~ £ 3 _ SIEMENS A K T IE NGES EL LS CH AF BFQ 60 is a bipolar silicon NPN microwave transistor in hermetically sealed metal


    OCR Scan     		PDF fl23Sb05 QQQ4b43 Q62702-F655 023SbQS BFQ60 zo 107 NA P 611 TRANSISTOR 2SC 2026 642p 2sc 643

    2SC644

    Abstract: 2SC644 S 2SC644 R
    Text: 2SC644 2SCÓ44 V ij.l] > N P N + U —± ? Ö / S i N P N E p ita x ia l P la n a r Low Noise Amplifier í# $£ / Features • Stia illIfc N F ¿ î{ Ê l'0 / L o w noise figure • hFE / " L a r g e hFE Absolute Maximum Ratings T a=25°C Sym bol Item 'SEE


    OCR Scan     		PDF 2SC644 65jSmax. 10//A, 100Hz 2SC644 2SC644 S 2SC644 R

    2SC2785

    Abstract: transistor IR 324 C to 220 2SA1175 2sc2785 ef VCE-60
    Text: NEC D ES C R IP TIO N NPN SILICON TRANSISTOR 2SC2785 The 2SC 2785 is designed for use in driver stage of A F amplifier and PACKAG E D IM E N S IO N S low speed switching. in millimeters inches FEATURES • High Voltage 4 .2 M A X . V c E O : 5 0 V M IN .


    OCR Scan     		PDF 2SC2785 2SA1175 transistor IR 324 C to 220 2sc2785 ef VCE-60