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    2sc897 hitachi

    Abstract: nec 2sd218 2sd316 2sd188 nec 2SA1103 SANKEN NEC 2SB618 2SC897 nec 2sa649 2sb618a RCA1B06
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CEO on PD Max hFE «T ON) Min (Hz) r ICBO Max (A) (CE)sat Max (s) Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . . .15 .


    Original     		PDF 2SA648 2SA663 2SC793 2SD188 2N5347 2N5478 2N6316 2N6318 2N5872 2N5874 2sc897 hitachi nec 2sd218 2sd316 2sd188 nec 2SA1103 SANKEN NEC 2SB618 2SC897 nec 2sa649 2sb618a RCA1B06

    transistor 2SB

    Abstract: c103 m TRANSISTOR 2SB558 c103 TRANSISTOR 2SB558-R MTT 65 A 12 N 8SD4 2SD428 2SB5580 C103 pnp
    Text: 2SB SILICON PNP TRIPLE DIFFUSED MESA TRANSISTOR 558 U n i t i n mm o • Power A m p l i f i e r A p p l i c a t i o n s JZfe&OMAX. SiWfch-c-i- ; p c = 6 0W ; Vqjjq = - l o o v 2SD488 y 7 '1 * y f i ' K i b t - t o 4 ow t Hi - P i * - r < * r y y 't n j j g k i r c ^ m r - t o


    OCR Scan     		PDF 2SD428 8SD488 -C103 300X300X1 200X200X1-5 transistor 2SB c103 m TRANSISTOR 2SB558 c103 TRANSISTOR 2SB558-R MTT 65 A 12 N 8SD4 2SB5580 C103 pnp