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    2SB164 Search Results

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    2SB164 Price and Stock

    Sanken Electric Co Ltd 2SB1648

    TRANS PNP DARL 150V 17A MT-200
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    Chip1Stop 2SB1648 79
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    Sanken Electric Co Ltd 2SB1649

    TRANS PNP DARL 150V 15A TO3PF
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    DigiKey 2SB1649 Bulk 1,000
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    Sanken Electric Co Ltd 2SB1647

    TRANS PNP DARL 150V 15A TO3P
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    Verical 2SB1647 15 8
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    TME 2SB1647 1
    • 1 $7.79
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    Chip1Stop 2SB1647 Bulk 15
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    Allegro MicroSystems LLC 2SB1647

    Transistor, Type: P-Darl, Voltage: 150 V, Current: 15 A |Allegro Sanken 2SB1647
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    Newark 2SB1647 Bulk 1,000
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    Toshiba America Electronic Components 2SB1640(TP,Q)

    Trans GP BJT PNP 60V 3A T/R
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    Chip1Stop 2SB1640(TP,Q) 950
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    2SB164 Datasheets (61)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SB164 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SB164 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SB164 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SB164 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SB164 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB164 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB164 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB164 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SB164 Unknown Cross Reference Datasheet Scan PDF
    2SB1640 Toshiba Low-Frequency Power Transistors (2SB Series, 2SD Series); Surface Mount Type: N; Package: TPL; Number Of Pins: 3; Viewing Angle: taping only; Publication Class: Low-Frequency Power Transistor; Part Number: 2SD2525 Original PDF
    2SB1640 Toshiba Transistor Silicon Pnp Triple Diffused Type Original PDF
    2SB1640 Unknown Scan PDF
    2SB1640 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1640 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1640 Toshiba PNP transistor Scan PDF
    2SB1640 Toshiba TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE Scan PDF
    2SB1641 Toshiba TRANS DARLINGTON PNP 100V 5A 3(2-10T1A) Original PDF
    2SB1641 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1641 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1641 Toshiba PNP transistor Scan PDF

    2SB164 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB1647

    Abstract: 2SD2560
    Text: JMnic Product Specification Silicon PNP Darlington Power Transistors 2SB1647 DESCRIPTION ・With TO-3PN package ・Complement to type 2SD2560 APPLICATIONS ・Audio ,regulator and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base


    Original     		PDF 2SB1647 2SD2560 -150V; -10mA 2SB1647 2SD2560

    2SB1643

    Abstract: No abstract text available
    Text: Transistors SMD Type Silicon PNP Epitaxial Planar Type 2SB1643 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1


    Original     		PDF 2SB1643 O-252 2SB1643

    2SD2560

    Abstract: 2SB1647 pnp 10A 12v 10a regulator ic
    Text: Inchange Semiconductor Product Specification 2SB1647 Silicon PNP Darlington Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type 2SD2560 APPLICATIONS ・Audio ,regulator and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to


    Original     		PDF 2SB1647 2SD2560 -10mA 2SD2560 2SB1647 pnp 10A 12v 10a regulator ic

    B1642 transistor

    Abstract: B1642 2SB1642
    Text: 2SB1642 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1642 Audio Frequency Power Amplifier Applications • Low collector saturation voltage: VCE sat = −1.5 V (max) • Collector power dissipation: PC = 25 W (Tc = 25°C) • Collector metal (fin) is fully covered with mold resin.


    Original     		PDF 2SB1642 B1642 transistor B1642 2SB1642

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SB1643 Silicon PNP epitaxial planar type 3.4±0.3 8.5±0.2 For power amplification 1.0±0.1 M Di ain sc te on na tin nc ue e/ d 1.5±0.1 10.0±0.3 6.0±0.5 • Features ● ● 1.1max. 2.0 1.5max. High collector to emitter VCEO High collector power dissipation PC


    Original     		PDF 2SB1643

    TRANSISTOR B1640

    Abstract: No abstract text available
    Text: 2SB1640 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1640 Audio Frequency Power Amplifier Unit: mm • Low saturation voltage: VCE sat = −1.5 V (max) • Collector metal (fin) is covered with mold region. • Complementary to 2SD2525 (IC = −2 A, IB = −0.2 A)


    Original     		PDF 2SB1640 2SD2525 TRANSISTOR B1640

    2SD2560

    Abstract: 2SB1647 DSA0016513
    Text: Equivalent circuit 2SD2560 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1647 100max µA V IEBO VEB=5V 100max µA V V(BR)CEO A hFE IB 1 A PC 130(Tc=25°C) 150min 5000min∗ VCE(sat) IC=10A, IB=10mA 2.5max W VBE(sat) IC=10A, IB=10mA


    Original     		PDF 2SD2560 2SB1647) MT-100 100max 150min 5000min 70typ 120typ 2SD2560 2SB1647 DSA0016513

    2SD2562

    Abstract: 2sb1649
    Text: Equivalent circuit 2SD2562 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1649 100max µA V IEBO VEB=5V 100max µA V 150min 5000min∗ 1 A VCE(sat) IC=10A, IB=10mA 2.5max PC 85(Tc=25°C) W VBE(sat) IC=10A, IB=10mA 3.0max V Tj 150 °C


    Original     		PDF 2SD2562 2SB1649) FM100 100max 150min 5000min 70typ 120typ 2SD2562 2sb1649

    2sb1649

    Abstract: CASET 2SD2561
    Text: 7 0 Ω E 2SB1649 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2561) 2SB1649 Unit ICBO VCB=–150V –100max µA VCEO –150 V IEBO VEB=–5V –100max µA V °C fT –55 to +150 °C COB Tstg IC=–10A, IB=–10mA –3.0max V VCE=–12V, IE=2A


    Original     		PDF 2SB1649 2SD2561) FM100 100max 45typ 320typ 150min 2sb1649 CASET 2SD2561

    2SB1641

    Abstract: 2SD2526 B1641
    Text: 2SB1641 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1641 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm • High DC current gain: hFE = 1500 min (VCE = −3 V, IC = −2.5 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −2.5 A)


    Original     		PDF 2SB1641 2SD2526 2SB1641 2SD2526 B1641

    TRANSISTOR D2525

    Abstract: D2525 2SD2525 2SB1640
    Text: 2SD2525 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2525 Audio Frequency Power Amplifier Applications • Unit: mm High DC current gain: 100 min · Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2 A, IB = 0.2 A) · Complementary to 2SB1640


    Original     		PDF 2SD2525 2SB1640 TRANSISTOR D2525 D2525 2SD2525 2SB1640

    TRANSISTOR D2525

    Abstract: 2sd2525 2SB1640 D2525
    Text: 2SD2525 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2525 Audio Frequency Power Amplifier Applications Unit: mm • High DC current gain: 100 min • Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2 A, IB = 0.2 A) • Complementary to 2SB1640


    Original     		PDF 2SD2525 2SB1640 TRANSISTOR D2525 2sd2525 2SB1640 D2525

    B1642 transistor

    Abstract: B1642 2sb1642
    Text: 2SB1642 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1642 Audio Frequency Power Amplifier Applications • Low collector saturation voltage: VCE sat = −1.5 V (max) • Collector power dissipation: PC = 25 W (Tc = 25°C) • Collector metal (fin) is fully covered with mold resin.


    Original     		PDF 2SB1642 B1642 transistor B1642 2sb1642

    2SB1642

    Abstract: No abstract text available
    Text: JMnic Product Specification 2SB1642 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Low collector saturation voltage: VCE SAT =-1.5V(Max) at IC=-2.5A,IB=-0.25A ・Collector power dissipation: PC=25W(TC=25℃) APPLICATIONS ・Audio frequency power amplifier applications


    Original     		PDF 2SB1642 O-220F O-220F) 2SB1642

    2SB1645

    Abstract: No abstract text available
    Text: Power Transistors 2SB1645 Silicon PNP triple diffusion planar type Darlington Unit: mm 15.5±0.5 Rating Unit VCBO −160 V Collector to emitter voltage VCEO −160 V Emitter to base voltage VEBO −5 V Peak collector current ICP −15 A Collector current IC


    Original     		PDF 2SB1645 2SB1645

    b1644

    Abstract: No abstract text available
    Text: 2SB1644JFRA 2SB1644J Datasheet PNP -4A -80V Power Transistor AEC-Q101 Qualified Outline Parameter Value VCEO IC 80V 4A LPT S (D2-PAK) Collector Base Emitter 2SB1644J 2SB1644JFRA (SC-83) Features 1) Suitable for Power Driver 2) Low VCE(sat) VCE(sat)= 1.5V(Max.) (IC/IB= 3A/ 300mA)


    Original     		PDF 2SB1644JFRA 2SB1644J AEC-Q101 SC-83) 300mA) B1644 b1644

    2SD2560

    Abstract: 2SB1647 2sd25
    Text: Equivalent circuit 2SD2560 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1647 100max µA V IEBO VEB=5V 100max µA V V(BR)CEO A hFE IB 1 A PC 130(Tc=25°C) Tj 150 –55to+150 °C Tstg IC=30mA 150min VCE=4V, IC=10A 5000min∗ VCE(sat)


    Original     		PDF 2SD2560 2SB1647) 100max 150min 5000min 70typ 120typ MT-100 2SD2560 2SB1647 2sd25

    2sb1648

    Abstract: 2SD2561
    Text: 7 0Ω E 2SB1648 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2561) Unit –150 V Symbol ICBO VCEO –150 V IEBO VEBO –5 V V(BR)CEO IC –17 A hFE IB –1 A VCE(sat) PC 200(Tc=25°C) W VBE(sat) Tj 150 °C fT Tstg –55 to +150 2SB1648


    Original     		PDF 2SB1648 2SD2561) 5000min 45typ 150min 100max 320typ MT-200 2sb1648 2SD2561

    Untitled

    Abstract: No abstract text available
    Text: 2SB1641 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1641 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm • High DC current gain: hFE = 1500 min (VCE = −3 V, IC = −2.5 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −2.5 A)


    Original     		PDF 2SB1641 2SD2526

    B1641

    Abstract: 2SB1641 2SD2526
    Text: TO SH IBA 2SB1641 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 641 Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • • High DC Current Gain : hEE = 1500 Min. (VCE= -3 V , IC= -2 .5 A ) Low Saturation Voltage


    OCR Scan     		PDF 2SB1641 2SD2526 B1641 2SB1641 2SD2526

    Untitled

    Abstract: No abstract text available
    Text: SILICON PNP TRIPLE DIFFUSED TYPE DARLINGTON POWER 2SB1641 H IGH POW ER SW ITCHING APPLICATIONS. H A M M E R DRIVE, PULSE M O T O R DRIVE APPLICATIONS. • H ig h DC C u rre n t G ain : h FE = 1500 (M in.) (V c • e = - 3 V , Iq = - 2 .5 A ) Low S a tu ra tio n V oltage


    OCR Scan     		PDF 2SB1641 --100V, --30m --20m 20//S --25V

    B1642 transistor

    Abstract: B1642 2sb1642
    Text: TOSHIBA 2SB1642 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 642 Unit in mm AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATIONS « • • Low Collector Saturation Voltage : V ce sat = -1.5V (Max.) d c = -2.5A , IB = -0.25A) Collector Power Dissipation : P q = 25W (Tc = 25°C)


    OCR Scan     		PDF 2SB1642 B1642 transistor B1642 2sb1642

    2SB1644

    Abstract: SC-83A T100
    Text: 2SB1644 Transistors Power Transistor -80V, -4A 2SB1644 ! Features ! External dim ensions (Units : mm) 1) Low saturation voltage. (Typ. VcE(sat) = -0 .5 V at Ic / = -3 A / -0.3A ) Ib 2) Excellent DC current gain characteristics. ! Absolute maximum ratings (Ta = 25°C)


    OCR Scan     		PDF 2SB1644 SC-83A 100ms 2SB1644 SC-83A T100

    Untitled

    Abstract: No abstract text available
    Text: 2SB1642 T O SH IB A TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1642 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS « « • Low Collector Saturation Voltage : V ce sat = - 1.5V (Max.) (IC = - 2.5A, IB = - 0.25A) Collector Power Dissipation : P q = 25W (Tc = 25°C)


    OCR Scan     		PDF 2SB1642