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    2SB1561 Search Results

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    2SB1561 Price and Stock

    ROHM Semiconductor 2SB1561T100Q

    TRANS PNP 60V 2A MPT3
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    DigiKey 2SB1561T100Q Digi-Reel 500 1
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    2SB1561T100Q Cut Tape 500 1
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    Quest Components 2SB1561T100Q 240
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    Chip One Stop 2SB1561T100Q Cut Tape 8,840
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    CoreStaff Co Ltd 2SB1561T100Q 400
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    2SB1561 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB1561 ROHM Medium Power Transistor (-60V, -2A, 60V, 2A) Original PDF
    2SB1561 ROHM Medium Power Transistor(-60V, -2A) Original PDF
    2SB1561 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB1561 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1561 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1561-Q Kexin PNP Transistors Original PDF
    2SB1561-Q TY Semiconductor PNP Transistors - SOT-89 Original PDF
    2SB1561T100Q ROHM Medium Power Transistor (-60 V, -2 A) Original PDF
    2SB1561T100Q ROHM TRANS PNP 60V 2A SOT-89 Original PDF
    2SB1561T100Q ROHM Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP 60V 2A SOT-89 Original PDF

    2SB1561 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SB1561

    Abstract: 2SD2391 T100
    Text: 2SB1561 Transistors Medium Power Transistor −60V, −2A 2SB1561 zExternal dimensions (Unit : mm) zFeatures 1) Low saturation voltage , typically VCE (sat) = −0.15V at IC / IB = −1A / −50mA. 2) Collector-emitter voltage = −60V 3) Pc = 2W (on 40x40×0.7mm ceramic board).


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    2SB1561 -50mA. 2SD2391. 2SB1561 2SD2391 T100 PDF

    100M200M

    Abstract: 2SB1561 2SD2391 T100
    Text: Medium Power Transistor −60V, −2A 2SB1561 Dimensions (Unit : mm) Features 1) Low saturation voltage , typically VCE (sat) = −0.15V at IC / IB = −1A / −50mA. 2) Collector-emitter voltage = −60V 3) Pc = 2W (on 40400.7mm ceramic board).


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    2SB1561 -50mA. 2SD2391. R0039A 100M200M 2SB1561 2SD2391 T100 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SB1561 Datasheet PNP -2.0A -60V Middle Power Transistor lOutline Parameter Value VCEO IC -60V -2.0A MPT3 Base Collector Emitter 2SB1561 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD2391 3) Low VCE(sat) VCE(sat)= -0.35V(Max.)


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    2SB1561 SC-62) OT-89> 2SD2391 -50mA) R1102A PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SB1561-Q SOT-89 • Features Unit: mm +0.1 -0.1 +0.1 -0.1 4.50 1.50 +0.1 1.80-0.1 +0.1 2.50-0.1 1 3 2 +0.1 0.53-0.1 +0.1 0.48-0.1 +0.1 0.44-0.1 +0.1 0.40-0.1 +0.1 2.60-0.1 VCE SAT =-0.15Vat IC/IB=-1A/-50mA +0.1 0.80-0.1 ● Low saturation Voltage typically


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    2SB1561-Q OT-89 15Vat -1A/-50mA PDF

    Untitled

    Abstract: No abstract text available
    Text: Medium Power Transistor 60V, 2A 2SD2391 Dimensions (Unit : mm) Features 1) Low saturation voltage , typically VCE (sat) =0.13V at IC / IB =1A /50mA. 2) Collector-emitter voltage =60V 3) Pc = 2W (on 40400.7mm ceramic board). 4) Complements the 2SB1561.


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    2SD2391 /50mA. 2SB1561. R0039A PDF

    Untitled

    Abstract: No abstract text available
    Text: Medium Power Transistor −60V, −2A 2SB1561 Dimensions (Unit : mm) Features 1) Low saturation voltage , typically VCE (sat) = −0.15V at IC / IB = −1A / −50mA. 2) Collector-emitter voltage = −60V 3) Pc = 2W (on 40400.7mm ceramic board).


    Original
    2SB1561 2SD2391. R0039A PDF

    2SB1561

    Abstract: 2SD2391 T100 60V2A
    Text: Medium Power Transistor 60V, 2A 2SD2391 Dimensions (Unit : mm) Features 1) Low saturation voltage , typically VCE (sat) =0.13V at IC / IB =1A /50mA. 2) Collector-emitter voltage =60V 3) Pc = 2W (on 40400.7mm ceramic board). 4) Complements the 2SB1561.


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    2SD2391 /50mA. 2SB1561. R0039A 2SB1561 2SD2391 T100 60V2A PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SD2391 Datasheet NPN 2.0A 60V Middle Power Transistor lOutline Parameter Value VCEO IC 60V 2.0A MPT3 Base Collector Emitter 2SD2391 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1561 3) Low VCE(sat) VCE(sat)=0.35V(Max.)


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    2SD2391 SC-62) OT-89> 2SB1561 A/50mA) R1102A PDF

    transistor b228

    Abstract: 2SB1561 2SD2391
    Text: Transistors 2SB1561 2SD2391 94S-191-B228 (94S-380-D228) 294 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the


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    2SB1561 2SD2391 94S-191-B228) 94S-380-D228) transistor b228 2SB1561 2SD2391 PDF

    SMD MARKING A16

    Abstract: No abstract text available
    Text: Transistors IC SMD Type PNP Transistors 2SB1561-Q SOT-89 • Features Unit: mm +0.1 -0.1 +0.1 -0.1 4.50 1.50 +0.1 1.80-0.1 +0.1 2.50-0.1 1 2 3 +0.1 0.53-0.1 +0.1 0.48-0.1 +0.1 0.44-0.1 +0.1 0.40-0.1 +0.1 2.60-0.1 VCE SAT =-0.15Vat IC/IB=-1A/-50mA +0.1 0.80-0.1


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    2SB1561-Q OT-89 15Vat -1A/-50mA SMD MARKING A16 PDF

    B-228

    Abstract: 94S-380-D228 transistor b228 2SB1561 2SD2391
    Text: Transistors 2SB1561 2SD2391 94S-191-B228 (94S-380-D228) 294


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    2SB1561 2SD2391 94S-191-B228) 94S-380-D228) B-228 94S-380-D228 transistor b228 2SB1561 2SD2391 PDF

    2sb1561

    Abstract: No abstract text available
    Text: SPICE PARAMETER 2SB1561 by ROHM TR Div. * 2SB1561 PNP BJT model * Date: 2006/11/17 .MODEL 2SB1561 PNP + IS=300.00E-15 + BF=123.73 + VAF=10.700 + IKF=4.2781 + ISE=300.00E-15 + NE=1.3969 + BR=214.02 + VAR=100 + IKR=.15167 + ISC=1.2849E-9 + NC=1.8301 + NK=.83786


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    2SB1561 Q2SB1561 00E-15 2849E-9 000E-3 934E-3 45E-12 842E-12 2sb1561 PDF

    Untitled

    Abstract: No abstract text available
    Text: Medium Power Transistor −60V, −2A 2SB1561 Dimensions (Unit : mm) Features 1) Low saturation voltage , typically VCE (sat) = −0.15V at IC / IB = −1A / −50mA. 2) Collector-emitter voltage = −60V 3) Pc = 2W (on 40400.7mm ceramic board).


    Original
    2SB1561 -50mA. 2SD2391. R0039A PDF

    Untitled

    Abstract: No abstract text available
    Text: Medium Power Transistor 60V, 2A 2SD2391 Dimensions (Unit : mm) Features 1) Low saturation voltage , typically VCE (sat) =0.13V at IC / IB =1A /50mA. 2) Collector-emitter voltage =60V 3) Pc = 2W (on 40400.7mm ceramic board). 4) Complements the 2SB1561.


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    2SD2391 /50mA. 2SB1561. R0039A PDF

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


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    Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent PDF

    113 marking code transistor ROHM

    Abstract: DTDS14GP DTB133HKA rkm transistor 2SC5274 datasheet FMC1A rkm 33 transistor FMC1A rkm 24 DTD133HKA
    Text: Abbreviated markings on mini-mold transistors Transistors Abbreviated markings on mini-mold transistors !MPT3 labels The label on the MPT3 packages indicates the product, hFE rank, and month of manufacture using 4 letters. Codes B and AF indicate products.


    Original
    PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    2SB1561

    Abstract: 2SD2391 T100 T101 SAA 7020
    Text: h7 O 2SB1561 /Transistors C D 4 5 6 1 y 'j3 > h 7 > y X ^ Epitaxial Planar PNP Silicon Transistor ^ ^ ^ ^ ifi^ /M id iu m Power Amp. 1W f i'+ ï É E l/ 'D im e n s io n s U n it : m m • & £ 1) V C E O = - 6 0 V T ' * 5 o 2) H U ? i f } g ^ P c = 2 W T * S 0


    OCR Scan
    2SB1561 -60VT* -1A/-50mA) 2SD2391 2SD2391. SC-62 40X40X0 2SD2391 T100 T101 SAA 7020 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SB1561 2SD2391 Transistors Medium Power Transistor —60V, —2A I 2SB1561 •F e a tu re s 1) Low VcetMt). (Typ.—0.15V at Ic/I b = — 1V/—50mA) 2) Collector-emltter voltage = —60 V 3) Pc * 2 W (on 40 x 40 x 0.7 mm ceramic board). 4) Complements the 2SD2391.


    OCR Scan
    2SB1561 2SD2391 2SD2391. 0Dlb713 O-220FN O-220FN O220FP T0-220FP, PDF

    t3d2

    Abstract: No abstract text available
    Text: by> v7>$/ Transistors 2SB1561 O C R 4 5 6 4 y ' j 3 > h 7 > v 7 i Epitaxial Planar PNP Silicon Transistor ^ ^ ^ ^ ifiJ l/M id iu m Power Amp. • • jim /Dim ensions (U nit: mm 1) V c E O = - 6 0 V T ' i > ' 5 o 2) H U - ? £ } l£ P c = 2 W T '£ > 3 o


    OCR Scan
    2SB1561 2SD2391 t3d2 PDF

    280lu

    Abstract: transistor b228 SAJ 280
    Text: 2SB1561 2SD2391 Transistors I Medium Power Transistor — 60V, — 2A 2SB1561 • F e a tu re s 1) L ow VcE(saj). (Typ.— 0 .1 5 V at I c /Ib 351— 1V/— 5 0m A ) 2 ) Collector-emitter voltage * — 6 0 V 3) P c = 2 W {on 4 0 X 4 0 X 0.7 m m ceram ic board).


    OCR Scan
    2SB1561 2SD2391 2SB1561 A/50m 94S-380-D228) 280lu transistor b228 SAJ 280 PDF

    Untitled

    Abstract: No abstract text available
    Text: RDNITI MPT • CPT F5 • PSD Application MPT CPT F5 PSD lc A VcEO (V) *VcB*VcER -3 2 -1 - 2* - 82—390 P Q R -3 -1 0 0 - -5 0 -1 -2 2* - 82—390 P Q R -3 -5 0 0 - 2SB1184 - -5 0 -3 - - 15 82—390 P Q R -3 -5 0 0 - 2SB1182 - -3 2 -2 - 2* 10 82—390


    OCR Scan
    Ta-25 2SB1132 2SA1900 2SB1184 2SB1182 2SB1181 OT-89) PDF

    KY 719

    Abstract: 122JK TB163TK TB143TK
    Text: MZ-um ransistors M % i— M ü / T y p e Number List POWER MOSFET 2SK1973F5 .70 2SK2041 . 74 2SK2042 . 75


    OCR Scan
    2SK1973F5 2SK2041 2SK2042 2SK2094F5 2SK2103 2SA1036K 2SA1037AK 2SA1037AKLN 2SA1455K RU101 KY 719 122JK TB163TK TB143TK PDF

    rkm 33 transistor

    Abstract: bkd transistor DTD133HKA BKD C6 DTB133HKA Transistor BJD 2SA1885 rkm 20 transistor 2SC5274 rkm transistor
    Text: Transistors Abbreviated label symbols on mini molded type Abbreviated label symbols on mini molded type •E M T 3 and UMT3 labels On general transistors, the product and hpE rank are in­ dicated by 2 or 3 letters. On digital transistors, the product type is indicated by a 2-digit number.


    OCR Scan
    FMA10A FMA11A IMB10A IMB11A IMB16 IMB17A IMD10A IMD14 IMD16A IMH10A rkm 33 transistor bkd transistor DTD133HKA BKD C6 DTB133HKA Transistor BJD 2SA1885 rkm 20 transistor 2SC5274 rkm transistor PDF