Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SB1495 Search Results

    SF Impression Pixel

    2SB1495 Price and Stock

    Toshiba America Electronic Components 2SB1495,Q(J

    TRANS PNP 100V 3A TO-220NIS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SB1495,Q(J Bulk
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Toshiba America Electronic Components 2SB1495,Q(M

    TRANS PNP 100V 3A TO-220NIS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SB1495,Q(M Bulk
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    2SB1495 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB1495 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB1495 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1495 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SB1495 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB1495 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1495 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1495 Toshiba Silicon PNP transistor for high power switching applications Scan PDF
    2SB1495 Toshiba TRANS DARLINGTON PNP 100V 3A 3(2-10R1A) Scan PDF
    2SB1495,Q(J Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 3A 100V TO220-3 Original PDF
    2SB1495,Q(M Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 3A 100V TO220-3 Original PDF

    2SB1495 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    B1495

    Abstract: 2SB1495 2SD2257 100-C3000
    Text: 2SB1495 東芝トランジスタ シリコンPNPエピタキシャル形 2SB1495 ○ スイッチング用 ○ ハンマドライブパルスモータドライブ用 ○ 電力増幅用 単位: mm • 直流電流増幅率が高い。 • 飽和電圧が低い。 : VCE sat = −1.5 V (最大) (IC = −1.5 A)


    Original     		2SB1495 2SD2257 2-10R1A 20070701-JA B1495 2SB1495 2SD2257 100-C3000 PDF

    D2257

    Abstract: 2SB1495 2SD2257
    Text: 2SD2257 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2257 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 min • Low saturation voltage: VCE (sat) = 1.5 V (max) • Complementary to 2SB1495


    Original     		2SD2257 2SB1495 D2257 2SB1495 2SD2257 PDF

    2SB1495

    Abstract: 2SD2257
    Text: SavantIC Semiconductor Product Specification 2SB1495 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SD2257 ·High DC current gain. ·Low saturation voltage. ·DARLINGTON APPLICATIONS ·High power switching applications


    Original     		2SB1495 O-220F 2SD2257 O-220F) -100V 2SB1495 2SD2257 PDF

    b1495

    Abstract: 2SB1495 2SD2257
    Text: 2SB1495 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1495 High-Power Switching Applications Unit: mm • High DC current gain: hFE = 2000 min (VCE = −2 V, IC = −2 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −1.5 A) • Complementary to 2SD2257


    Original     		2SB1495 2SD2257 b1495 2SB1495 2SD2257 PDF

    B1495

    Abstract: 2SB1495 2SD2257
    Text: 2SB1495 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1495 High-Power Switching Applications Unit: mm • High DC current gain: hFE = 2000 min (VCE = −2 V, IC = −2 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −1.5 A) • Complementary to 2SD2257


    Original     		2SB1495 2SD2257 B1495 2SB1495 2SD2257 PDF

    toshiba b1495

    Abstract: No abstract text available
    Text: 2SB1495 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1495 High-Power Switching Applications Unit: mm • High DC current gain: hFE = 2000 min (VCE = −2 V, IC = −2 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −1.5 A) • Complementary to 2SD2257


    Original     		2SB1495 2SD2257 2-10R1A toshiba b1495 PDF

    Untitled

    Abstract: No abstract text available
    Text: , One. J cs TELEPHONE: 973 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 2SB1495 Silicon PNP Darlington Power Transistor us A DESCRIPTION • High DC Current Gain- "2 : hFE= 2000(Min)@ (VCE= -2V, lc= -2A) • Low-Collector Saturation Voltage: VCE(satr -1.5V(Max.)@lc= -1.5A


    Original     		2SB1495 2SD2257 O-220F -10mA -100V; PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SD2257 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2257 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • Unit: mm High DC current gain: hFE = 2000 min • Low saturation voltage: VCE (sat) = 1.5 V (max) • Complementary to 2SB1495


    Original     		2SD2257 2SB1495 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SB1495 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1495 High-Power Switching Applications Unit: mm • High DC current gain: hFE = 2000 min (VCE = −2 V, IC = −2 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −1.5 A) • Complementary to 2SD2257


    Original     		2SB1495 2SD2257 PDF

    Darlington NPN Silicon Diode

    Abstract: 2SB1495 2SD2257
    Text: Inchange Semiconductor Product Specification 2SD2257 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・High DC current gain ・Low saturation voltage ・Complement to type 2SB1495 ・DARLINGTON APPLICATIONS ・High power switching applications


    Original     		2SD2257 O-220F 2SB1495 O-220F) Darlington NPN Silicon Diode 2SB1495 2SD2257 PDF

    2SB1495

    Abstract: 2SD2257
    Text: SavantIC Semiconductor Product Specification 2SD2257 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·High DC current gain ·Low saturation voltage ·Complement to type 2SB1495 ·DARLINGTON APPLICATIONS ·High power switching applications


    Original     		2SD2257 O-220F 2SB1495 O-220F) 2SB1495 2SD2257 PDF

    D2257

    Abstract: 2SB1495 2SD2257
    Text: 2SD2257 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2257 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • Unit: mm High DC current gain: hFE = 2000 min • Low saturation voltage: VCE (sat) = 1.5 V (max) • Complementary to 2SB1495


    Original     		2SD2257 2SB1495 D2257 2SB1495 2SD2257 PDF

    d2257

    Abstract: No abstract text available
    Text: 2SD2257 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2257 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • Unit: mm High DC current gain: hFE = 2000 min • Low saturation voltage: VCE (sat) = 1.5 V (max) • Complementary to 2SB1495


    Original     		2SD2257 2SB1495 SC-67 2-10R1A d2257 PDF

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 PDF

    2SB1495

    Abstract: 2SD2257
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 2000 Min @ (VCE= -2V, IC= -2A) ·Low-Collector Saturation Voltage: VCE(sat)= -1.5V(Max.)@IC= -1.5A ·Complement to Type 2SD2257


    Original     		2SD2257 -10mA; -100V; 2SB1495 2SD2257 PDF

    D2257

    Abstract: 2SB1495 2SD2257
    Text: 2SD2257 東芝トランジスタ シリコンNPNエピタキシャル形 2SD2257 ○ スイッチング用 ○ ハンマドライブパルスモータドライブ用 ○ 電力増幅用 単位: mm • 直流電流増幅率が高い。 : hFE = 2000 最小 (VCE = 2 V, IC = 2 A)


    Original     		2SD2257 2SB1495 SC-67 2-10R1A 20070701-JA D2257 2SB1495 2SD2257 PDF

    Untitled

    Abstract: No abstract text available
    Text: SILIC O N P N P EP IT A X IA L T Y P E 2SB1495 U nit in mm HIGH PO W ER SW ITCH IN G APPLICATIONS. I0 ± 0 .3 • • • High DC Current Gain : h p E = 2000 M in. (at V cE = _ 2V, I c = —2A) Low Saturation Voltage : VCE(sat) = - 1-5V(MAX.)(at IC = -1 .5 A )


    OCR Scan     		2SB1495 2SD2257 PDF

    2SB1495

    Abstract: 2SD2257
    Text: TO SH IBA 2SB1495 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S B 1 495 Unit in mm HIGH POWER SWITCHING APPLICATIONS • • • High DC Current Gain : hFE = 2000 Min. (VCE= _ 2 V , Ic = -2A ) Low Saturation Voltage : VCE (sa t)= -l-5 V (MAX.) (IC= -1 .5 A )


    OCR Scan     		2SB1495 2SD2257 2SB1495 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SB1495 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2SB1495 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS • • High DC Current Gain : hpE = 2000 Min. (VCE = - 2 V , I c = - 2 A ) Low Saturation Voltage • Complementary to 2SD2257 10±0.3


    OCR Scan     		2SB1495 2SD2257 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SB1495 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S B 149 5 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS • 10 +0.3 High DC Current Gain : hFE = 2000 Min. (VCe = -2 V , IC = -2 A ) Low Saturation Voltage : VCE( s a t ) =— (MAX.) (IC = -1.5A )


    OCR Scan     		2SB1495 2SD2257 PDF

    2SB1495

    Abstract: 2SD2257
    Text: TOSHIBA 2SB1495 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S B 1 495 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS • High DC Current Gain : hFE = 2000 Min. (VCE= -2 V , IC= -2 A ) Low Saturation Voltage : VCE(sat)=—1-5V (MAX.) (IC= -1.5A ) Complementary to 2SD2257


    OCR Scan     		2SB1495 2SD2257 2SB1495 PDF

    2SB1495

    Abstract: 2SD2257
    Text: TO SH IBA 2SB1495 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S B 1 495 Unit in mm HIGH POWER SWITCHING APPLICATIONS • • • High DC Current Gain : hFE = 2000 Min. (VCE= _ 2 V , Ic = -2A ) Low Saturation Voltage : VCE (sa t)= -l-5 V (MAX.) (IC= -1 .5 A )


    OCR Scan     		2SB1495 2SD2257 2SB1495 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SD2257 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SD2257 Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 1 Q ± 0 -3 • • • High DC Current Gain : hjrj; = 2000 MIN. Low Saturation Voltage : V^ e (sat) = 1.5V (MAX.)


    OCR Scan     		2SD2257 2SB1495 PDF

    2SB1495

    Abstract: 2SD2257
    Text: TO SH IBA 2SD2257 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SD2257 Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 10 ±0.3 r ^3.2 ± 0.2 2.7±Q 2 CO • • • High DC Current Gain : hjrE = 2000 MIN. Low Saturation Voltage :


    OCR Scan     		2SD2257 2SB1495 2SB1495 2SD2257 PDF