2SB1416
Abstract: 2SD2136
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2136 Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1416 Unit: mm Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)
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2002/95/EC)
2SD2136
2SB1416
2SB1416
2SD2136
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2136 Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1416 Unit: mm • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit
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2002/95/EC)
2SD2136
2SB1416
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2SB1416
Abstract: 2SD2136
Text: Power Transistors 2SD2136 Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1416 Unit: mm • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO 60 V Collector-emitter voltage (Base open)
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2SD2136
2SB1416
2SB1416
2SD2136
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SD2136 Silicon NPN triple diffusion planar type Unit: mm For power amplification Complementary to 2SB1416 90˚ 10.8±0.2 • Features 4.5±0.2 3.8±0.2 7.5±0.2 0.85±0.1 1.0±0.1 0.8 C 16.0±1.0 2.5±0.1 0.65±0.1 • High forward current transfer ratio hFE which has satisfactory
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2SD2136
2SB1416
100ms
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SB1416 Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SD2136 • Features 4.5±0.2 90˚ 3.8±0.2 10.8±0.2 7.5±0.2 0.85±0.1 1.0±0.1 0.8 C 16.0±1.0 2.5±0.1 0.65±0.1 • High forward current transfer ratio hFE which has satisfactory
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2SB1416
2SD2136
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2SB1416
Abstract: 2SD2136
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1416 Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD2136 Unit: mm 3.8±0.2 10.8±0.2 ue pl d in an c se ed lud pl vi an m m es
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2002/95/EC)
2SB1416
2SD2136
2SB1416
2SD2136
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2SB1416
Abstract: 2SD2136
Text: Power Transistors 2SB1416 Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD2136 Unit: mm 90˚ 10.8±0.2 0.65±0.1 0.85±0.1 1.0±0.1 0.8 C 2.5±0.1 • High forward current transfer ratio hFE which has satisfactory
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2SB1416
2SD2136
2SB1416
2SD2136
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2SB1416
Abstract: 2SD2136
Text: Power Transistors 2SD2136 Silicon NPN triple diffusion planar type Unit: mm For power amplification Complementary to 2SB1416 90˚ 10.8±0.2 • Features 4.5±0.2 3.8±0.2 7.5±0.2 0.85±0.1 1.0±0.1 0.8 C 16.0±1.0 2.5±0.1 0.65±0.1 • High forward current transfer ratio hFE which has satisfactory
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Original
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2SD2136
2SB1416
2SB1416
2SD2136
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2136 Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1416 Unit: mm • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit
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2002/95/EC)
2SD2136
2SB1416
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2SB1416
Abstract: 2SD2136
Text: Power Transistors 2SB1416 Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SD2136 • Features 4.5±0.2 90˚ 3.8±0.2 10.8±0.2 7.5±0.2 0.85±0.1 1.0±0.1 0.8 C 16.0±1.0 2.5±0.1 0.65±0.1 • High forward current transfer ratio hFE which has satisfactory
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2SB1416
2SD2136
2SB1416
2SD2136
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1416 Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD2136 Unit: mm 90˚ 10.8±0.2 0.65±0.1 0.85±0.1 1.0±0.1 0.8 C 2.5±0.1 • High forward current transfer ratio hFE which has satisfactory
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Original
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2002/95/EC)
2SB1416
2SD2136
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2136 Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1416 Unit: mm Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 60 V Collector-emitter voltage (Base open)
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2002/95/EC)
2SD2136
2SB1416
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2SB1416
Abstract: 2SD2136
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1416 Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD2136 Unit: mm 3.8±0.2 10.8±0.2 ue pl d in an c se ed lud pl vi an m m es
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2002/95/EC)
2SB1416
2SD2136
2SB1416
2SD2136
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2SD2136
Abstract: 2SB1416
Text: Power Transistors 2SD2136 Silicon NPN triple diffusion planar type Unit: mm For power amplification Complementary to 2SB1416 90˚ 10.8±0.2 • Features 4.5±0.2 3.8±0.2 7.5±0.2 0.85±0.1 1.0±0.1 0.8 C 16.0±1.0 2.5±0.1 0.65±0.1 • High forward current transfer ratio hFE which has satisfactory
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2SD2136
2SB1416
2SD2136
2SB1416
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2SB1416
Abstract: 2SD2136
Text: Power Transistors 2SB1416 Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SD2136 • Features 4.5±0.2 90˚ 3.8±0.2 10.8±0.2 7.5±0.2 0.85±0.1 1.0±0.1 0.8 C 16.0±1.0 2.5±0.1 0.65±0.1 • High forward current transfer ratio hFE which has satisfactory
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2SB1416
2SD2136
2SB1416
2SD2136
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2SB1416
Abstract: 2SD2136
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2136 Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1416 Unit: mm Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)
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Original
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2002/95/EC)
2SD2136
2SB1416
2SB1416
2SD2136
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1416 Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD2136 Unit: mm 3.8±0.2 10.8±0.2 0.65±0.1 0.85±0.1 1.0±0.1 0.8 C 0.8 C 16.0±1.0
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2002/95/EC)
2SB1416
2SD2136
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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PDF
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SB1416 2SB1416 Silicon PNP Epitaxial Planar Type Package Dimensions AF Power Amplifier Complementary Pair with 2SD2136 •Features • High DC current gain Iife and good linearity • Low collector-emitter saturation voltage (Vc e m )
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OCR Scan
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2SB1416
2SD2136
Glh321
52ETE00
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PDF
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Untitled
Abstract: No abstract text available
Text: Power T ransistors 2SD213Ó 2SD2136 Silicon NPN Triple-Diffused Planar Type Package Dim ensions Pow er Amplifier Com plem entary Pair with 2SB1416 • Features • H igh DC c u r re n t gain hFE and good lin earity • L ow c o lle c to r-e m itte r sa tu ra tio n v o ltag e
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OCR Scan
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2SD213Ã
2SD2136
2SB1416
200MHz
bT32flSe
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PDF
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25814
Abstract: 2SB141 2SB1416 2SD2136
Text: Power Transistors 2SB141Ó 2SB1416 Silicon PNP Epitaxial Planar Type • Package Dim ensions A F Pow er Amplifier Com plem entary Pair with 2SD2136 ■ Features • H igh D C c u r re n t gain Iife and good lin earity • L o w c o lle c to r-e m itte r s a tu ra tio n v o ltag e (VcEtaau)
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OCR Scan
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2SB141Ã
2SB1416
2SD2136
-20mA
25814
2SB141
2SB1416
2SD2136
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PDF
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2SB1424
Abstract: 2SB1426 2SB1413 2SB1414 2SB1416 2SB1417 2SB1417A 2SB1418 2SB1418A 2SB1419
Text: - 90 - 1 I W Ta=25cC, *Ep[àTc=25‘C m 2SBH13 2SB1414 2SB1415 2SB1416 2SBH17 2SB14Ì7A 2SB1418 2SB1418A 2SB1419 2SB1421 *)CD1 A 1) 1) i.'JUL'tOL 2SB1424 2SB1426 2SB1428 2SB1430 2SB1431 2SB1432 2SB1433 2SB1434 2SB1435 2SB1437 2SB1438 2SB1439 2SB1440 2SB1446
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OCR Scan
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2SB1413
2SB1414
ZSB1415
2SB1416
2SB1417
2SB1417A
2SB1418
2SD2185
SC-59
2SB1440
2SB1424
2SB1426
2SB1414
2SB1418
2SB1418A
2SB1419
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PDF
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2SD2136
Abstract: 957a 2SB1416
Text: Power Transistors 2SD213Ó 2SD2136 Silicon NPN Triple-Diffused Planar Type Package Dimensions Power Amplifier Complementary Pair with 2SB1416 • Features • High DC current gain hFE and good linearity • Low coliector-em itter saturation voltage (Vceisso)
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OCR Scan
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2SD2136
2SB1416
2SD2136
957a
2SB1416
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PDF
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2SB816
Abstract: 2SB1212 2SB921 2SB873 2SA1120 2SB1085B 2sb 989 2SB941 2SC4341 2SB1416
Text: 59 - fi 2SB 980 2SB 2SB 2SB 2SB 2S8 2SB 981 982 983 , 984 _ • 985 986 , 2S8 987 2SB 988 « Manuf. T K T tfi T fö T S tB t u q n 989 991 992 993 994 995 996 2SB 2SB 2SB 2SB 2SB 997 ^ 998 999 1000 1000A H 3 SANYO 9ÇR77C; 2SB775 2SB816 2SB825 2SB816 * 2SA17Q3
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OCR Scan
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2SA1253
2SB849
2SB775
2SA1264
2SB965
2SB1371
2SA1264
2SB1372
2SB816
2SA1265
2SB1212
2SB921
2SB873
2SA1120
2SB1085B
2sb 989
2SB941
2SC4341
2SB1416
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