LLO14
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1322 Silicon PNP epitaxial planar type For low frequency power amplification Complementary to 2SD1994 • Package M Di ain sc te on na tin nc ue e/ d Features Allowing supply with the radial taping
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2002/95/EC)
2SB1322
2SD1994
LLO14
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1994A Silicon NPN epitaxial planar type For low-frequency power strengthening and drive Complementary to 2SB1322A Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat)
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2002/95/EC)
2SD1994A
2SB1322A
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1322A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1994A Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Allowing supply with the radial taping
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2002/95/EC)
2SB1322A
2SD1994A
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2sb1322
Abstract: No abstract text available
Text: Transistor 2SB1322A Silicon PNP epitaxial planer type For low-frequency power amplification Complementary to 2SD1994A Unit: mm 1.05 2.5±0.1 ±0.05 0.15 6.9±0.1 0.7 4.0 0.8 1.0 1.0 0.2 Allowing supply with the radial taping. 0.5 4.5±0.1 • Features ●
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2SB1322A
2SD1994A
2sb1322
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2SB1322A
Abstract: No abstract text available
Text: 2SB1322A 2SB1322A TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. EMITTER PCM: 1 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: -1 A Collector-base voltage -60 V V(BR)CBO: Operating and storage junction temperature range 3. BASE 1 2 3 TJ, Tstg: -55℃ to +150℃
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2SB1322A
-50mA
2SB1322A
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1322A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1994A Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Allowing supply with the radial taping
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2002/95/EC)
2SB1322A
2SD1994A
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2SB1322A
Abstract: 2SD1994A
Text: Transistors 2SB1322A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1994A Unit: mm 6.9±0.1 4.0 2.5±0.1 0.8 • Features • Allowing supply with the radial taping (0.5) (1.0) (0.2) 4.5±0.1 0.7 14.5±0.5 (1.0)
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2SB1322A
2SD1994A
2SB1322A
2SD1994A
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2SB1322A
Abstract: 2SD1994A
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1322A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1994A Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) Th an W is k y Th e a pro ou Fo an po du fo
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2002/95/EC)
2SB1322A
2SD1994A
2SB1322A
2SD1994A
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2SB1322A
Abstract: 2SD1994A
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1994A Silicon NPN epitaxial planar type For low-frequency power strengthening and drive Complementary to 2SB1322A Unit: mm 2.5±0.1 (0.8) (1.0) (0.2) 4.5±0.1 0.7 Th an W is k y
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2002/95/EC)
2SD1994A
2SB1322A
2SB1322A
2SD1994A
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2SD1994A
Abstract: 2SB1322A 2SD1994
Text: Transistor 2SD1994A Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SB1322A Unit: mm 1.05 2.5±0.1 ±0.05 0.15 6.9±0.1 0.7 4.0 0.8 0.2 0.65 max. 14.5±0.5 ● Low collector to emitter saturation voltage VCE sat .
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2SD1994A
2SB1322A
2SB1322A.
2SD1994A
2SB1322A
2SD1994
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2SB1322A
Abstract: 2SD1994A
Text: Transistors 2SD1994A Silicon NPN epitaxial planar type For low-frequency power strengthening and drive Complementary to 2SB1322A Unit: mm 6.9±0.1 4.0 2.5±0.1 0.8 • Features • Low collector-emitter saturation voltage VCE(sat) • Allowing supply with the radial taping
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Original
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2SD1994A
2SB1322A
2SB1322A
2SD1994A
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1322A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1994A Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Allowing supply with the radial taping
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2002/95/EC)
2SB1322A
2SD1994A
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2SB1322A
Abstract: No abstract text available
Text: Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2SB1322A TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. EMITTER PCM: 1 W (Tamb=25℃) 2. COLLECTOR Collector current -1 A ICM: Collector-base voltage -60 V V(BR)CBO: Operating and storage junction temperature range
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2SB1322A
-50mA
2SB1322A
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2SB1322A
Abstract: 2SD1994A
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1322A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1994A Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) ue pl d in an c se ed lud pl vi an m m es
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2002/95/EC)
2SB1322A
2SD1994A
2SB1322A
2SD1994A
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2SB1322A
Abstract: 2sb1322ar 2SB1322AQ 2SB1322AS
Text: 2SB1322A -1A , -60V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES G Allow Supply with The Radial Taping H Emitter Collector Base J CLASSIFICATION OF hFE 1
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2SB1322A
2SB1322A-Q
2SB1322A-R
2SB1322A-S
14-Feb-2011
200MHz
2SB1322A
2sb1322ar
2SB1322AQ
2SB1322AS
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1994A Silicon NPN epitaxial planar type For low-frequency power strengthening and drive Complementary to 2SB1322A Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat)
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Original
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2002/95/EC)
2SD1994A
2SB1322A
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SB1322A TRANSISTOR PNP 1. EMITTER 2. COLLECTOR FEATURES z Allowing Supply with The Radial Taping 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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2SB1322A
200MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SB1322A TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. EMITTER PCM: 1 W (Tamb=25℃) 2. COLLECTOR Collector current -1 A ICM: Collector-base voltage -60 V V(BR)CBO:
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2SB1322A
-50mA
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PDF
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2SD1994A
Abstract: 2SB1322A
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1994A Silicon NPN epitaxial planar type For low-frequency power strengthening and drive Complementary to 2SB1322A Unit: mm M Di ain sc te on na tin nc ue e/ d 6.9±0.1 4.0 • Low collector-emitter saturation voltage VCE(sat)
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Original
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2002/95/EC)
2SD1994A
2SB1322A
2SD1994A
2SB1322A
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PDF
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2SB1322A
Abstract: 2SD1994A
Text: Transistors 2SB1322A Silicon PNP epitaxial planer type Unit: mm 1.05 2.5±0.1 ±0.05 0.15 6.9±0.1 4.0 0.8 0.2 0.7 14.5±0.5 0.65 max. +0.1 • Absolute Maximum Ratings Ta = 25°C Rating Unit Collector to base voltage VCBO −60 V Collector to emitter voltage
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Original
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2SB1322A
2SB1322A
2SD1994A
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1994A Silicon NPN epitaxial planar type For low-frequency power strengthening and drive Complementary to 2SB1322A Unit: mm 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat)
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Original
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2002/95/EC)
2SD1994A
2SB1322A
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SD1994A TRANSISTOR NPN 1. EMITTER FEATURES z Low Collector to Emitter Saturation Voltage z Complementary Pair with 2SB1322A z Allowing Supply with the Radial Taping
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2SD1994A
2SB1322A
200MHz
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2SD1994
Abstract: 2SB1322 2SB1322A 2SD1994A
Text: Panasonic 2SB1322, 2SB1322A -> [J = 1 > P N P I f ÿ d f > 7 ’ J U 7 ‘ U 2SD1994, 2SD1994A ¿ =1 >7°U • # - i ' J f i U Ä • 2SD1994, 2SD1994A t =1 y -f' ¿ ^ 7 0 • ÿ'Jr^T- ■ Ta=25°C) ; Item n V9 9 * 3 1 / ^ - Unit -3 0 2SB1322 V cbo 2SB1322A
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OCR Scan
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2SB1322,
2SB1322A
2SD1994,
2SD1994A
2SB1322
2SD1994
2SB1322A
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PDF
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2SB1335A
Abstract: 2SB1333 2SB1365 2SD2021 2SB1320A 2SB1353 2sb1355 2SB1335 2SB1342 2sb1357
Text: - 86 - Ta=250C, *EPÍÍTc=25T; m 2SB1320A 2SB1321A 2SB1322A 2SB1323 2SB1324 2SB1325 2SB1326 2SB1333 2SB1334 2SB1334A î± % fôT fòT & T H# Hi* H # a—A a —A D— A a —A ¿0 010 03 D— A 2SB1335A 2SB1339 2SB1340 2SB1341 2SB1342 2SB1343 2SB1344 2SB1346
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OCR Scan
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2SB1320A
2SB1321A
2SB132ZA
2SB1323
2SB1324
2SB1325
2SB1326
2SD2027
O-220ABÂ
2SB1346
2SB1335A
2SB1333
2SB1365
2SD2021
2SB1353
2sb1355
2SB1335
2SB1342
2sb1357
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