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    Panasonic Electronic Components 2SB1322A0A

    TRANS PNP 50V 1A MT-2
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    2SB1322 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB1322 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB1322 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1322 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1322 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1322 Panasonic PNP Transistor Scan PDF
    2SB1322A Panasonic Silicon PNP Transistor Original PDF
    2SB1322A Panasonic PNP Transistor Original PDF
    2SB1322A Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF
    2SB1322A Transys Electronics Plastic-Encapsulated Transistors Original PDF
    2SB1322A Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB1322A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1322A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1322A Panasonic PNP Transistor Scan PDF
    2SB1322A0A Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP LF AMP 50VCEO MT-2 Original PDF
    2SB1322AR Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF
    2SB1322AR Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF
    2SB1322AS Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF
    2SB1322AS Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF

    2SB1322 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LLO14

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1322 Silicon PNP epitaxial planar type For low frequency power amplification Complementary to 2SD1994 • Package M Di ain sc te on na tin nc ue e/ d  Features  Allowing supply with the radial taping


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    PDF 2002/95/EC) 2SB1322 2SD1994 LLO14

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1994A Silicon NPN epitaxial planar type For low-frequency power strengthening and drive Complementary to 2SB1322A Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat)


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    PDF 2002/95/EC) 2SD1994A 2SB1322A

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1322A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1994A Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Allowing supply with the radial taping


    Original
    PDF 2002/95/EC) 2SB1322A 2SD1994A

    2sb1322

    Abstract: No abstract text available
    Text: Transistor 2SB1322A Silicon PNP epitaxial planer type For low-frequency power amplification Complementary to 2SD1994A Unit: mm 1.05 2.5±0.1 ±0.05 0.15 6.9±0.1 0.7 4.0 0.8 1.0 1.0 0.2 Allowing supply with the radial taping. 0.5 4.5±0.1 • Features ●


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    PDF 2SB1322A 2SD1994A 2sb1322

    2SB1322A

    Abstract: No abstract text available
    Text: 2SB1322A 2SB1322A TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. EMITTER PCM: 1 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: -1 A Collector-base voltage -60 V V(BR)CBO: Operating and storage junction temperature range 3. BASE 1 2 3 TJ, Tstg: -55℃ to +150℃


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    PDF 2SB1322A -50mA 2SB1322A

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1322A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1994A Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Allowing supply with the radial taping


    Original
    PDF 2002/95/EC) 2SB1322A 2SD1994A

    2SB1322A

    Abstract: 2SD1994A
    Text: Transistors 2SB1322A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1994A Unit: mm 6.9±0.1 4.0 2.5±0.1 0.8 • Features • Allowing supply with the radial taping (0.5) (1.0) (0.2) 4.5±0.1 0.7 14.5±0.5 (1.0)


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    PDF 2SB1322A 2SD1994A 2SB1322A 2SD1994A

    2SB1322A

    Abstract: 2SD1994A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1322A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1994A Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) Th an W is k y Th e a pro ou Fo an po du fo


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    PDF 2002/95/EC) 2SB1322A 2SD1994A 2SB1322A 2SD1994A

    2SB1322A

    Abstract: 2SD1994A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1994A Silicon NPN epitaxial planar type For low-frequency power strengthening and drive Complementary to 2SB1322A Unit: mm 2.5±0.1 (0.8) (1.0) (0.2) 4.5±0.1 0.7 Th an W is k y


    Original
    PDF 2002/95/EC) 2SD1994A 2SB1322A 2SB1322A 2SD1994A

    2SD1994A

    Abstract: 2SB1322A 2SD1994
    Text: Transistor 2SD1994A Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SB1322A Unit: mm 1.05 2.5±0.1 ±0.05 0.15 6.9±0.1 0.7 4.0 0.8 0.2 0.65 max. 14.5±0.5 ● Low collector to emitter saturation voltage VCE sat .


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    PDF 2SD1994A 2SB1322A 2SB1322A. 2SD1994A 2SB1322A 2SD1994

    2SB1322A

    Abstract: 2SD1994A
    Text: Transistors 2SD1994A Silicon NPN epitaxial planar type For low-frequency power strengthening and drive Complementary to 2SB1322A Unit: mm 6.9±0.1 4.0 2.5±0.1 0.8 • Features • Low collector-emitter saturation voltage VCE(sat) • Allowing supply with the radial taping


    Original
    PDF 2SD1994A 2SB1322A 2SB1322A 2SD1994A

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1322A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1994A Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Allowing supply with the radial taping


    Original
    PDF 2002/95/EC) 2SB1322A 2SD1994A

    2SB1322A

    Abstract: No abstract text available
    Text: Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2SB1322A TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. EMITTER PCM: 1 W (Tamb=25℃) 2. COLLECTOR Collector current -1 A ICM: Collector-base voltage -60 V V(BR)CBO: Operating and storage junction temperature range


    Original
    PDF 2SB1322A -50mA 2SB1322A

    2SB1322A

    Abstract: 2SD1994A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1322A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1994A Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) ue pl d in an c se ed lud pl vi an m m es


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    PDF 2002/95/EC) 2SB1322A 2SD1994A 2SB1322A 2SD1994A

    2SB1322A

    Abstract: 2sb1322ar 2SB1322AQ 2SB1322AS
    Text: 2SB1322A -1A , -60V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES  G Allow Supply with The Radial Taping H Emitter Collector Base J CLASSIFICATION OF hFE 1


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    PDF 2SB1322A 2SB1322A-Q 2SB1322A-R 2SB1322A-S 14-Feb-2011 200MHz 2SB1322A 2sb1322ar 2SB1322AQ 2SB1322AS

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1994A Silicon NPN epitaxial planar type For low-frequency power strengthening and drive Complementary to 2SB1322A Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat)


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    PDF 2002/95/EC) 2SD1994A 2SB1322A

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SB1322A TRANSISTOR PNP 1. EMITTER 2. COLLECTOR FEATURES z Allowing Supply with The Radial Taping 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


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    PDF 2SB1322A 200MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SB1322A TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. EMITTER PCM: 1 W (Tamb=25℃) 2. COLLECTOR Collector current -1 A ICM: Collector-base voltage -60 V V(BR)CBO:


    Original
    PDF 2SB1322A -50mA

    2SD1994A

    Abstract: 2SB1322A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1994A Silicon NPN epitaxial planar type For low-frequency power strengthening and drive Complementary to 2SB1322A Unit: mm M Di ain sc te on na tin nc ue e/ d 6.9±0.1 4.0 • Low collector-emitter saturation voltage VCE(sat)


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    PDF 2002/95/EC) 2SD1994A 2SB1322A 2SD1994A 2SB1322A

    2SB1322A

    Abstract: 2SD1994A
    Text: Transistors 2SB1322A Silicon PNP epitaxial planer type Unit: mm 1.05 2.5±0.1 ±0.05 0.15 6.9±0.1 4.0 0.8 0.2 0.7 14.5±0.5 0.65 max. +0.1 • Absolute Maximum Ratings Ta = 25°C Rating Unit Collector to base voltage VCBO −60 V Collector to emitter voltage


    Original
    PDF 2SB1322A 2SB1322A 2SD1994A

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1994A Silicon NPN epitaxial planar type For low-frequency power strengthening and drive Complementary to 2SB1322A Unit: mm 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat)


    Original
    PDF 2002/95/EC) 2SD1994A 2SB1322A

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SD1994A TRANSISTOR NPN 1. EMITTER FEATURES z Low Collector to Emitter Saturation Voltage z Complementary Pair with 2SB1322A z Allowing Supply with the Radial Taping


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    PDF 2SD1994A 2SB1322A 200MHz

    2SD1994

    Abstract: 2SB1322 2SB1322A 2SD1994A
    Text: Panasonic 2SB1322, 2SB1322A -> [J = 1 > P N P I f ÿ d f > 7 ’ J U 7 ‘ U 2SD1994, 2SD1994A ¿ =1 >7°U • # - i ' J f i U Ä • 2SD1994, 2SD1994A t =1 y -f' ¿ ^ 7 0 • ÿ'Jr^T- ■ Ta=25°C) ; Item n V9 9 * 3 1 / ^ - Unit -3 0 2SB1322 V cbo 2SB1322A


    OCR Scan
    PDF 2SB1322, 2SB1322A 2SD1994, 2SD1994A 2SB1322 2SD1994 2SB1322A

    2SB1335A

    Abstract: 2SB1333 2SB1365 2SD2021 2SB1320A 2SB1353 2sb1355 2SB1335 2SB1342 2sb1357
    Text: - 86 - Ta=250C, *EPÍÍTc=25T; m 2SB1320A 2SB1321A 2SB1322A 2SB1323 2SB1324 2SB1325 2SB1326 2SB1333 2SB1334 2SB1334A î± % fôT fòT & T H# Hi* H # a—A a —A D— A a —A ¿0 010 03 D— A 2SB1335A 2SB1339 2SB1340 2SB1341 2SB1342 2SB1343 2SB1344 2SB1346


    OCR Scan
    PDF 2SB1320A 2SB1321A 2SB132ZA 2SB1323 2SB1324 2SB1325 2SB1326 2SD2027 O-220ABÂ 2SB1346 2SB1335A 2SB1333 2SB1365 2SD2021 2SB1353 2sb1355 2SB1335 2SB1342 2sb1357