SMD TRANSISTOR MARKING 2A

Abstract: smd transistor 2A MARKING 2A smd 2a transistor BC MARKING 05AF 2SB1188 transistor smd marking BC TRANSISTOR SMD w smd transistor marking bc
Contextual Info: Transistors SMD Type Medium Power Transistor 2SB1188 Features Low VCE sat . VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base Voltage VCBO -40 V Collector-emitter Voltage VCEO -32 V Emitter-base Voltage

Contextual Info: Product specification 2SB1188 Features Low VCE sat . VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base Voltage VCBO -40 V Collector-emitter Voltage VCEO -32 V Emitter-base Voltage VEBO

2SB1188-R

Contextual Info: MCC TM Micro Commercial Components 2SB1188-P 2SB1188-Q 2SB1188-R
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features Lead Free Finish/RoHS Compliant "P" Suffix designates • • •

Contextual Info: MP6Z2 Transistors Medium Power Transistor 32V, 2A MP6Z2 zApplications Low frequency amplifier zDimensions (Unit : mm) MPT6 zFeatures 1) Low VCE(sat) VCE(sat) = 0.5V(Typ.) (IC / IB = 2A / 0.2A) 2) Contains 2SD1766-die and 2SB1188-die in a package. (6) (5)

d1189f

Abstract: 2SB891 d1758 2SB891F 2sb1188 2sb1277
Contextual Info: Transistors Medium power Transistor -32V, -2A 2 S B 1 1 8 8 /2 S B 1 1 8 2 /2 S B 1 2 4 0 /2 S B 8 9 1 F / 2 S B 8 2 2 /2 S B 1 2 7 7 /2 S B 9 1 1 M •F e a tu re s 1) ^External dim ensions (Units: m m ) LOW VcE(sat). 2SB1188 VcElsat; = —0 .5 V (Typ.)

2SB1188

Abstract: 2SB1188 SOT89
Contextual Info: 2SB1188 2SB1188 FEATURES Power dissipation PCM: 0.5 Collector current -2 ICM: Collector-base voltage V BR CBO: SOT-89 TRANSISTOR (PNP) 1. BASE W (Tamb=25℃) 2. COLLECTOR1 2 A -40 3. EMITTER 3 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-89 Plastic-Encapsulate Transistors 2SB1188 ＳＯＴ－８９ TRANSISTOR（PNP ） FEATURES Power dissipation PCM : 0.5 W （Tamb=25℃） Collector current ICM: -2 A Collector-base voltage １．ＢＡＳＥ

2SB1188K

Contextual Info: 2SB1188K PNP Silicon Medium Power Transistors SOT-89 P b Lead Pb -Free 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous

LT 500-t

Abstract: 2SB1188
Contextual Info: 2SB1188 Epitaxial Planar PNP Transistors SOT-89 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 ABSOLUTE MAXIMUM RATINGS Ta=25%C Rating Symbol Limits Unit Collector-Base Voltage VCBO -40 Vdc Collector-Emitter Voltage VCEO -32 Vdc Emitter-Base Voltage VEBO -5 Vdc

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1188 PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION  The UTC 2SB1188 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator.  1 FEATURES

2SB1188

Contextual Info: Transys Electronics L I M I T E D SOT-89 Plastic-Encapsulated Transistors 2SB1188 FEATURES Power dissipation PCM: 0.5 Collector current -2 ICM: Collector-base voltage V BR CBO: SOT-89 TRANSISTOR (PNP) 1. BASE W (Tamb=25℃) 2. COLLECTOR1 2 A -40 3. EMITTER

DC TO DC convertor

Abstract: Q1188 2SB1188PT R1188 transistor 2A pnp
Contextual Info: CHENMKO ENTERPRISE CO.,LTD 2SB1188PT SURFACE MOUNT PNP Medium Power Transistor VOLTAGE 32 Volts CURRENT 2 Ampere APPLICATION * Power driver and Dc to DC convertor . FEATURE SC-62/SOT-89 * Small flat package. SC-62/SOT-89 * Low saturation voltage VCE(sat)=-0.5V(typ.)(IC/IB=-2A/-0.2A)

Contextual Info: 2SD1766 SOT-89 Transistor NPN 1. BASE SOT-89 2. COLLECTOR 1 2 3. EMITTER 3 4.6 4.4 1.8 1.4 1.6 1.4 B Features — — 2.6 4.25 2.4 3.75 Low VCE(sat).VCE(sat)=0.16V(Typ.)(IC/IB=2A/0.2A) Complements to 2SB1188 0.8 MIN 0.44 0.37 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: MP6T2 Transistors Medium Power Transistor −32V, −2A MP6T2 zDimensions (Unit : mm) zApplications Low frequency amplifier MPT6 zFeatures 1) Low VCE(sat), VCE(sat) = −0.5V(Typ.) (IC / IB = −2A / −0.2A) 2) Contain two 2SB1188-dies in a package. zStructure

2SB1188-Q

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • 2SB1188-P 2SB1188-Q 2SB1188-R PNP Plastic-Encapsulate Transistors Case Material:Molded Plastic. UL Flammability

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SB1188 TRANSISTOR PNP SOT-89-3L FEATURES 1. BASE 2. COLLECTOR 1 z Low VCE(sat). z Complements the 2SD1766 2 3 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2SB1240

Abstract: transistor 2SB1240 2SB1182 2SB1188 2SD1758 2SD1766 2SD1862 T100
Contextual Info: 2SB1188 / 2SB1182 / 2SB1240 Transistors Medium power transistor −32V, −2A 2SB1188 / 2SB1182 / 2SB1240 zExternal dimensions (Unit : mm) 2SB1182 (2) (3) 0.5±0.1 0.4±0.1 1.5±0.1 0.1 0.4+ −0.05 0.4±0.1 1.5±0.1 2.3+0.2 −0.1 C0.5 0.65±0.1 0.75 9.5±0.5

2sb1188

Abstract: 2SB1188R
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • 2SB1188 2SB1188-P 2SB1188-Q 2SB1188-R PNP Plastic-Encapsulate Transistors Power dissipation: PCM = 0.5W Tamb=25ć

Contextual Info: 2SB1188 Epitaxial Planar PNP Transistors SOT-89 * “G” Lead Pb -Free 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25%C ) Rating Symbol Limits Unit Collector-Base Voltage VCBO -40 Vdc Collector-Emitter Voltage VCEO -32 Vdc Emitter-Base Voltage

2SB1188

Contextual Info: 2SB1188 Epitaxial Planar PNP Transistors SOT-89 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 ABSOLUTE MAXIMUM RATINGS Ta=25%C Rating Symbol Limits Unit Collector-Base Voltage VCBO -40 Vdc Collector-Emitter Voltage VCEO -32 Vdc Emitter-Base Voltage VEBO -5 Vdc

2SB891

Abstract: 2SB1240 2SB911 2SB1182 2SB1188 2SB891F 2SD1766 TO-126F BC 390 Transistor 1-02R
Contextual Info: Transistors Medium power Transistor -32V, -2A 2SB1188/2SB1182/2SB1240/2SB891 F/ 2SB822/2SB1277/2SB911M • E x t e r n a l d im e n s io n s (U nits: m m ) •F e a tu re s 1) LOW VcE(sat). 2SB1182 2SB1188 VcE(sat) = - 0 . 5 V (Typ.) (Ic / I b = - 2 A / - 0 . 2 A )

PNP 200V 2A SOT89

Abstract: cj sot 89
Contextual Info: 2SB1188 SOT-89 Plastic-Encapsulate Transistors TRANSISTOR PNP FEATURES z Low VCE(sat).VCE(sat) = -0.5V (Typ.)(IC/IB = -2A / -0.2A) z Complements the 2SD1766 z Weight: 0.05 g z RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H"

2SD1766

Contextual Info: 2SB1188 SOT-89 Transistor PNP 1. BASE SOT-89 2. COLLECTOR 1 2 4.6 4.4 1.8 1.4 1.6 1.4 3. EMITTER 3 B 2.6 4.25 2.4 3.75 Features 0.8 MIN — Low VCE(sat). — 0.44 0.37 Complements the 2SD1766 Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage

transistor bc 132

Abstract: B1188 BC transistor series
Contextual Info: 2SB1188 Transistor, PNP Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62)package • package marking: 2SB1188; BC^, where ★ is hFE code 2SB1188 (MPT3) • collector power dissipation, P c = 2 W, when mounted on 40 x 40 x 0.7 mm