2SB1086A
Abstract: 2SD1563A
Text: Inchange Semiconductor Product Specification 2SB1086A Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SD1563A ・Low collector saturation voltage ・Large current capability APPLICATIONS ・Designed for use in low frequency
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2SB1086A
O-126
2SD1563A
-120V;
2SB1086A
2SD1563A
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2SB1086
Abstract: 2SD1563
Text: JMnic Product Specification 2SB1086 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SD1563 ・Low collector saturation voltage ・Large current capability APPLICATIONS ・Designed for use in low frequency power amplifier applications
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2SB1086
O-126
2SD1563
-100V;
2SB1086
2SD1563
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2SB1089
Abstract: 2SD1567
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1089 DESCRIPTION •High Collector Current: IC= -3A ·Low Collector Saturation Voltage : VCE sat = -1.5V(Max)@IC= -2A ·Complement to Type 2SD1567 APPLICATIONS ·Designed for power supplies or a variety of drives in audio
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2SB1089
2SD1567
-50mA;
2SB1089
2SD1567
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2SB1086
Abstract: 2SD1563
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1086 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V (Min) ·Wide Area of Safe Operation ·Complement to Type 2SD1563 APPLICATIONS ·Designed for low frequency power amplifier applications.
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2SB1086
-120V
2SD1563
-100V;
2SB1086
2SD1563
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2SB1085
Abstract: 2SD1562
Text: Inchange Semiconductor Product Specification 2SB1085 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SD1562 ・Low collector saturation voltage APPLICATIONS ・Designed for use in low frequency power amplifier applications
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2SB1085
O-220
2SD1562
O-220)
-100V;
2SB1085
2SD1562
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silan
Abstract: No abstract text available
Text: 2SB108040AML 2SB108040AML SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB108040AML is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø High ESD capability; Ø High surge capability;
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2SB108040AML
2SB108040AML
2SB108040AMLYY
343dice/wafer
silan
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2SB1085A
Abstract: 2SD1562A
Text: JMnic Product Specification 2SB1085A Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SD1562A ・Low collector saturation voltage APPLICATIONS ・Designed for use in low frequency power amplifier applications PINNING
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2SB1085A
O-220
2SD1562A
O-220)
-120V;
2SB1085A
2SD1562A
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2SB1086A
Abstract: 2SD1563A
Text: JMnic Product Specification 2SB1086A Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SD1563A ・Low collector saturation voltage ・Large current capability APPLICATIONS ・Designed for use in low frequency power amplifier applications
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Original
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2SB1086A
O-126
2SD1563A
-120V;
2SB1086A
2SD1563A
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2SD1565
Abstract: 2SB1087
Text: Inchange Semiconductor Product Specification 2SD1565 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・High DC current gain ・DARLINGTON ・Complement type 2SB1087 APPLICATIONS ・For low frequency power amplifier and power switching applications
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2SD1565
O-220
2SB1087
O-220)
VCC50V
2SD1565
2SB1087
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2SB1087
Abstract: No abstract text available
Text: Inchange Semiconductor Product Specification 2SB1087 Silicon PNP Power Transistors DESCRIPTION ・With TO-220C package ・High DC current gain ・DARLINGTON APPLICATIONS ・For low frequency power amplifier and low speed power switching applications PINNING
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2SB1087
O-220C
-30mA,
-100V,
2SB1087
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2SB1085
Abstract: 2SD1562
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1085 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V (Min) ·Wide Area of Safe Operation ·Complement to Type 2SD1562 APPLICATIONS ·Designed for low frequency power amplifier applications.
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2SB1085
-120V
2SD1562
-100V;
2SB1085
2SD1562
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nec 2sd381
Abstract: TIP65 MJ4361 2SD608A 2SD382 2SD1459R SD1478 idc2073
Text: POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 25 30 2SD1080 2SD1562 2SD1562 2SD1763 2SD1763 2SD1953 40349 40349L 40349S 40349Vl 40349V2 40349V2 IDC2073 2SC1448 KSC2073 2SC1669 2SC1669 2SC1669R ~~g~~~~o 35 40 2SD1459Q 2SD1459R 2SC1669Y 2SD608 2SB1086A
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2SC522
2N1482
BDC01D
2SD381
2SD382
2SB1086
nec 2sd381
TIP65
MJ4361
2SD608A
2SD1459R
SD1478
idc2073
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Untitled
Abstract: No abstract text available
Text: 2SB108100MA 2SB108100MA LOW IR SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION 2SB108100MA is a schottky barrier diode chips Ø Due to special schottky barrier structure, the Lb fabricated in silicon epitaxial planar technology; La Ø chips have very low reverse leakage current typical
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2SB108100MA
2SB108100MA
002mA@
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2SD1563A
Abstract: 2SB1086A
Text: SavantIC Semiconductor Product Specification 2SD1563A Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SB1086A ·Wide area of safe operation ·High breakdown voltage :BVCEO=160V min APPLICATIONS ·For low frequency power amplifier
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2SD1563A
O-126
2SB1086A
2SD1563A
2SB1086A
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2SA1015
Abstract: 2SB1041 2SA935 2SA934 2SA854 2SA933 2SA1358 2SA1096 2SA1309A 2SA1339
Text: - Si € Type No. tt Í5 Manuf. n H SANYO M S TOSHIBA i NEC B ÎL HITACHI M ± FUJITSU il fâ T MATSUSHITA h m MITSUBISHI P — A ROHM * 2SA 5 1 2 —" It £ 2SA1358 2SA1096 2SB1086 * 2 SA 513 ^ JK 2SAÌ358 2SA1096 2SA934 * 2SA 516 ^ 2SA1096 2SB1086 * 2SA 516A
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2SA1358
2SA1096
2SB1086
2SA934
2SA1015
2SB1041
2SA935
2SA934
2SA854
2SA933
2SA1358
2SA1096
2SA1309A
2SA1339
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Untitled
Abstract: No abstract text available
Text: ROHM CO LTD - MOE D 000SS3T h 7 > y X ^ / T ransistors 2SB1085 — 2SB11 ^ BBRHF1 PNP y >J□ > ' 1T -3 3 - / ^ h7>y'z$ fi£J§5j£11>^^ffl/Low Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor • íl-Jfé \f-;£ !3 /'D im e n s io n s U n it: mm
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000SS3T
2SB1085
2SB11
2SD1562.
G00SS41
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Untitled
Abstract: No abstract text available
Text: 2SB1086A / T ransistors PNP y ' J ^ > fiH ? l& tS ^ iifllffl/L o w Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor • ^i-}fi\f>±0/D im en sio n s U n it: mm 1) m M I Z T & Z (B V c e o = -1 6 0 V )„ 2) A s o * > 'E : < a i c ? i t 'o 3) 2SD1563A£ □
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2SB1086A
2SD1563A£
2SD1563A.
O-126
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Untitled
Abstract: No abstract text available
Text: Iv 7 > y ^ £ /Transistors 2SB1086 PNP v U n > h 7 > v 'X ^ 2 S B 1 8 6 I S J i i l f c l ^ M / L o w Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor • 1 5 \t ii0 /D im e n s io n s Unit : mm) (B V c e o = - 1 2 0 V ) o 2) 3) 2 S D 1 5 6 3 t z i> y U T ' * 5 „
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2SB1086
2SD1563.
2SB1086
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d1563a
Abstract: No abstract text available
Text: 2SB1086A Is ~7 > ' / X $ /Transistors o q r i 8 6 A Epitaxial Planar PNP Silicon Transistor iililfc S ^ iS llffl/L o w Freq. Power Amp. • v tiilH /D im en sio n s U nit: mm 2.5±0.2 r 1 BVc eo = -1 6 0 V & 2) S O A f r 'E i- 'o 3) 2SD1563At = I> 7 U T '& 3 0
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2SD1563At
O-126
2SB1086A
d1563a
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Untitled
Abstract: No abstract text available
Text: F ~7 > v ^ $ /Transistors 2 S D 2SD1563A 1 5 6 3 A ^ ^ ^ v t v - ^ npn Freq. Power Amp. Epitaxial Planar NPN Silicon Transistor • ^ /D im e n s io n s U n it: mm (BVCEO= 160 V ) o 2) A S O ^ K < « a i ; ? l i t ' 0 3) 2SB1086A £ 3 > ') X' & -5 „ 4) S fc ift& 'v W K tttt
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2SD1563A
2SB1086A
2SB1086A.
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2sc4137
Abstract: TO126FP 2SB1423 2SB1311 2SD1379 2S02166 2SA1775 to-126fp 2SB1086A 2SB1007
Text: ROHM CO MOE LT» TñSñW ]> G0035ñb 2 IRHM 1 Irl 7=33- 0 } • TO-126, TO-126FP Types Type TO-126 2SB1007 2SB1009 2SB1065 2SB1086 2SB1086A 2SD1378 2SD1380 2SD1382 2SD1506 2SD1563 2SD1563A 2SB1423 2SD2147 2SC3272 — — 2SB1008 2SB1272 2SD1379 2SD1637 2SD1638
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7fi20W
O-126,
O-126FP
O-126
O-126FP
JO-126FP
2SB1007
2SB1309
2SB1009
2sc4137
TO126FP
2SB1423
2SB1311
2SD1379
2S02166
2SA1775
to-126fp
2SB1086A
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2SB1085A
Abstract: No abstract text available
Text: 2SB1085A h ~p > y X £ /T ra n s is to rs 9 C D 4 8 5 A I ^ + ' > 7 ^ 7 pU - ^ P N P y 'J = i > h 7 > y ^ ^ Epitaxial Planar PNP Silicon Transistor filÜ S ^ ^ lS 'U ffl/L o w Freq. Power Amp. • W Ï& r j- ^ i a / D im e n s i o n s Unit : mm 1) S W E E T ' * * (B V Ce o = - 1 6 0 V ) o
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2SB1085A
O-220
SC-46
2SB1085A
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2SB1085A
Abstract: No abstract text available
Text: S "7 > v 7, £ /Transistors 2SB1085A PNP '> ';= !> Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor • &M : • i>|.JfiT|-;£|I]/Dim ensions U n it: mm 1) 7 i . 5 (BVC e o = - 1 60V )o 2) A S O A 'l l 'o 3 ) W l i < , C o b A ^ J ^ l ' o 4) 2 S D 1 5 6 2 A t = J > y j T i > 5 o
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2SB1085A
-160V
2SD1562A.
2SB1085A
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Untitled
Abstract: No abstract text available
Text: 2SB1085 / T ransistors i W + y W l ' -fls—m PNP '>•;=!> Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor • • T T /ilH / Dimensions U n it: mm 1) ¡ S t E ? <£>-3 (B V CEo = - 1 2 0 V ) o 2) A S O t f £ ^ „ 3 ) f r A 4 < , C o b W 'S l'o
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2SB1085
Tc--25
S80I-8S2
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