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    2SB1020 PNP DARLINGTON Search Results

    2SB1020 PNP DARLINGTON Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    ULS2003H/R Rochester Electronics LLC ULS2003 - High Voltage High Current Darlington Array Visit Rochester Electronics LLC Buy
    ULS2022R/B Rochester Electronics LLC ULS2022 - High Voltage High Current Darlington Array Visit Rochester Electronics LLC Buy
    PS2502L-1-A Renesas Electronics Corporation DC Input Darlington, , / Visit Renesas Electronics Corporation
    PS2502L-4-A Renesas Electronics Corporation DC Input Darlington, , / Visit Renesas Electronics Corporation

    2SB1020 PNP DARLINGTON Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    box54c

    Abstract: BOX34C b0336 BOW84C B0650 2SB1100K 2SB1098L BOW24C 2SB1099 2SB897
    Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ie Max (A) PD Max (W) fT hFE Min Max (Hz) leBO Max (A) t, Max tf Max (s) (s) TOper Max (Oe) Package Style PNP Darlington Transistors, (Co nt' d) 5 10 B0262B B0262B B0682 2SB1098M 2SB1098L


    Original     		PDF B0262B B0682 2SB1098M 2SB1098L 2SB1098K 2SB1227 2SB885 SGS127 box54c BOX34C b0336 BOW84C B0650 2SB1100K BOW24C 2SB1099 2SB897

    SGS-Ates

    Abstract: sgs-ates transistors BD698 2SB1146 bd266 Motorola TIP125
    Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer Ic Max A V(BR)CEO Of) PD hFE Max ON) Min Max *T 'CBO Max tr Max (Hz) (A) (8) r (CE)sat Max (Ohms) T Oper Max Package Style <°C) Darlington Transistors, PNP (Cont'd) . . . .5 . . . .10 . . 15 .


    Original     		PDF SDM3203 SDM3201 SDM3204 SGS125 TIP125 TIP625 MJE1090 SGS-Ates sgs-ates transistors BD698 2SB1146 bd266 Motorola TIP125

    2SA1941 amp circuit

    Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
    Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including


    Original     		PDF BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943

    mje15033 replacement

    Abstract: BU108 2SC25 Replacements for BDW84 724 motorola NPN Transistor with heat pad BDX54 BD-375 BU326 BU100 2SC144
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD6036 PNP MJD6039 Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, convertors, and power amplifiers.


    Original     		PDF 2N6034 2N6039 MJD6036 MJD6039 POW32 TIP73B TIP74 TIP74A TIP74B TIP75 mje15033 replacement BU108 2SC25 Replacements for BDW84 724 motorola NPN Transistor with heat pad BDX54 BD-375 BU326 BU100 2SC144

    MJH11021 equivalent

    Abstract: BUV44 FT317 SDT9202 2SC1903 BD262 DARLINGTON BD133 mje15033 replacement IR641 2SC2159
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJH10012 See MJ10012 Complementary Darlington Silicon Power Transistors PNP MJH11017* . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. MJH11019* • High DC Current Gain @ 10 Adc — hFE = 400 Min (All Types)


    Original     		PDF MJH10012 MJ10012) MJH11018, MJH11020, MJH11022, MJH11017* MJH11019* MJH11021* MJH11018* MJH11020* MJH11021 equivalent BUV44 FT317 SDT9202 2SC1903 BD262 DARLINGTON BD133 mje15033 replacement IR641 2SC2159

    TIP142 TRANSISTOR REPLACEMENT

    Abstract: replacement for TIP147 high end amplifier schematics 2n3055 pin configuration NPN transistor tip41c BDW51C schematics TIP142 TIP147 BD262 DARLINGTON 2N6022 BU108 transistor tip142
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP140 TIP141* TIP142* PNP TIP145 TIP146* TIP147* Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V


    Original     		PDF TIP140, TIP145 TIP141, TIP146 TIP142, TIP147 TIP73B TIP74 TIP74A TIP74B TIP142 TRANSISTOR REPLACEMENT replacement for TIP147 high end amplifier schematics 2n3055 pin configuration NPN transistor tip41c BDW51C schematics TIP142 TIP147 BD262 DARLINGTON 2N6022 BU108 transistor tip142

    2SC2246

    Abstract: 2SD669 equivalent RCA1C03 BUW84 BD875 equivalent 2N6407 BU108 2N6026 2SD1178 NSD134
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low–speed switching motor control applications. • Similar to the Popular NPN 2N6282, 2N6283, 2N6284 and the PNP 2N6285,


    Original     		PDF 2N6282, 2N6283, 2N6284 2N6285, 2N6286, 2N6287 TIP73B TIP74 TIP74A TIP74B 2SC2246 2SD669 equivalent RCA1C03 BUW84 BD875 equivalent 2N6407 BU108 2N6026 2SD1178 NSD134

    MJ11017 equivalent

    Abstract: BU108 MJ11021 BU326 BU100 MJE3055T
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJ11017 MJ11021* NPN MJ11018* Complementary Darlington Silicon Power Transistors . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. MJ11022 • High dc Current Gain @ 10 Adc — hFE = 400 Min All Types


    Original     		PDF MJ11018, MJ11022, MJ11017 MJ11021* MJ11018* MJ11022 TIP73B TIP74 TIP74A TIP74B MJ11017 equivalent BU108 MJ11021 BU326 BU100 MJE3055T

    2sa1046

    Abstract: 2SD436 BD133 BD878 2SC1013 2SC1943 BD419 2SC1014 IR425 2sc2168
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BDX33B BDX33C* Darlington Complementary Silicon Power Transistors PNP BDX34B BDX34C* . . . designed for general purpose and low speed switching applications. • High DC Current Gain — hFE = 2500 typ. at IC = 4.0


    Original     		PDF BDX33B, BDX33C, 33C/34B, 220AB BDX33B BDX33C* BDX34B BDX34C* TIP73B 2sa1046 2SD436 BD133 BD878 2SC1013 2SC1943 BD419 2SC1014 IR425 2sc2168

    Motorola transistor 388 TO-204AA

    Abstract: 714 ic BC 458 2SC124 BU108 BU326 2SA1046 2SC7 BDX54 2SD214
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6030 thru 2N6031 See 2N5630 Plastic Darlington Complementary Silicon Power Transistors PNP 2N6035 . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain —


    Original     		PDF 2N6030 2N6031 2N5630) 2N6035, 2N6038 2N6036, 2N6039 225AA 2N6035 2N6036* Motorola transistor 388 TO-204AA 714 ic BC 458 2SC124 BU108 BU326 2SA1046 2SC7 BDX54 2SD214

    BU108

    Abstract: TRANSISTOR REPLACEMENT GUIDE BD676 BD676A application note BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD676 BD676A BD678 BD678A BD680 BD680A BD682 Plastic Medium-Power Silicon PNP Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 Min @ IC = 1.5 and 2.0 Adc


    Original     		PDF BD676, BD675, BD676 BD676A BD678 BD678A BD680 BD680A BD682 TIP73B BU108 TRANSISTOR REPLACEMENT GUIDE BD676 BD676A application note BU326 BU100

    transistor K 3596

    Abstract: TIP-106 motorola power transistor to-126 2N6109 equivalent MJE3055 TO-126 BU326 BU108 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE700,T Plastic Darlington Complementary Silicon Power MJE702 Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 Typ @ IC = 2.0 Adc


    Original     		PDF MJE700 MJE800 T0220AB, MJE700T MJE800T MJE702 MJE703 MJE802 transistor K 3596 TIP-106 motorola power transistor to-126 2N6109 equivalent MJE3055 TO-126 BU326 BU108 BU100

    2Sd331 npn transistor

    Abstract: 724 motorola NPN Transistor with collector heat pad BU108 2SA1046 MJ15003 300 watts amplifier MOTOROLA MJD122 application note ST T4 3580 724 motorola NPN Transistor with heat pad BDX54 BU326
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD122* PNP MJD127* Complementary Darlington Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS


    Original     		PDF 2N6040 2N6045 TIP120 TIP122 TIP125 TIP127 MJD122* MJD127* TIP73B TIP74 2Sd331 npn transistor 724 motorola NPN Transistor with collector heat pad BU108 2SA1046 MJ15003 300 watts amplifier MOTOROLA MJD122 application note ST T4 3580 724 motorola NPN Transistor with heat pad BDX54 BU326

    mj150* darlington mj15002

    Abstract: BU108 2SA1046 bc 574 All similar transistor 2sa715 silicon npn 2SD716 transistor PNP transistor motorola mj2268 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low–frequency switching applications. • High DC Current Gain @ IC = 10 Adc — hFE = 2400 Typ — 2N6282, 2N6283, 2N6284


    Original     		PDF 2N6282, 2N6283, 2N6284 2N6285, 2N6286, 2N6287 2N6285 2N6286 mj150* darlington mj15002 BU108 2SA1046 bc 574 All similar transistor 2sa715 silicon npn 2SD716 transistor PNP transistor motorola mj2268 BU326 BU100

    bd775

    Abstract: 2SC7 BD779 Diode BAY 61 bd776 MDS20 BD776-778-780 BUX98A AMPLIFIER 2SD718 2sb688 schematic MJW16010
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BD777 PNP BD776 BD778 BD780 * Plastic Darlington Complementary Silicon Power Transistors . . . designed for general purpose amplifier and high–speed switching applications. • High DC Current Gain hFE = 1400 Typ @ IC = 2.0 Adc


    Original     		PDF BD776 BD777, BD780 BD777 BD778 TIP73B TIP74 TIP74A bd775 2SC7 BD779 Diode BAY 61 MDS20 BD776-778-780 BUX98A AMPLIFIER 2SD718 2sb688 schematic MJW16010

    TRANSISTOR C 3807

    Abstract: BU108 2SA1046 2N5034 package motorola 2n5303 2Sd331 npn transistor 724 motorola NPN Transistor with heat pad transistor TIP107 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJF6388* PNP MJF6668* Complementary Power Darlingtons For Isolated Package Applications *Motorola Preferred Devices Designed for general–purpose amplifiers and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink


    Original     		PDF MJF6388* MJF6668* 2N6388, 2N6668, TIP102 TIP107 E69369 TIP73B TIP74 TIP74A TRANSISTOR C 3807 BU108 2SA1046 2N5034 package motorola 2n5303 2Sd331 npn transistor 724 motorola NPN Transistor with heat pad transistor TIP107 BU326 BU100

    BDV65B equivalent

    Abstract: buv48 equivalent BU108 tip127 pin details 2SD424 BDX54 BU326 BU100 mje340
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BDV65B PNP BDV64B Complementary Silicon Plastic Power Darlingtons . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain HFE = 1000 min. @ 5 Adc • Monolithic Construction with Built–in Base Emitter Shunt Resistors


    Original     		PDF BDV65B BDV64B TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C BDV65B equivalent buv48 equivalent BU108 tip127 pin details 2SD424 BDX54 BU326 BU100 mje340

    Untitled

    Abstract: No abstract text available
    Text: 2SB1020 SILICON PNP TRIPLE DIFFUSED TYPE DARLINGTON POWER HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. I Q 3 MAX. 7.0 FEA TU R ES: . High DC Current Gain: hpE=2000(Min.) (at V c e =-3V, Ic =-3A


    OCR Scan     		PDF 2SB1020 2SD1415.

    transistor regulator tv

    Abstract: 2SC2242 2SC3346 2sd1407 2SA1012 transistor 2Sb1020 npn 2SC3558 2sd1408 transistor 2sd525 2sb1018
    Text: T0-220 Type Power Transistors TO-22QAB, TQ-220 dg Interchangeability List Type No. NPN TV chroma output 2SC1569 TV Audio output 2SC2242 TV Vertical output Ic TO-220AB Application PNP A) Pc (Tc=25°C) (W) Alternates Type No. TQ-220 NPN PNP 12.5 0.15 2SC2073


    OCR Scan     		PDF T0-220 O-22QAB, TQ-220 2SC1569 2SC2242 2SC2073 2SD1052 2SD1052A 2SD880 2SC2233 transistor regulator tv 2SC3346 2sd1407 2SA1012 transistor 2Sb1020 npn 2SC3558 2sd1408 transistor 2sd525 2sb1018

    2SC3560

    Abstract: 2SC3309 2SC3310 2SC3497 2SC3561 2SD1571 2SC35S9
    Text: Powered by ICminer.com Application MAX. M r NPN SWITCHING REG. ! I I PNP •c A 2SC3309 i' 2SC3560 ! _ ;. .m m rm x .T. 2SC3561 j 2SD1571 ) 2 3 2SC3559 | Pc Tc=25°C (W) ' ; hFE VcE(sat) MAX. Cob TYP. V ce (V) >C (A) (V) 'c (A) 'B


    OCR Scan     		PDF 2SC3309 20MIN. 2SC3560 10MIN. 2SC3561 2SD1571 2SC35S9 2SC3560 2SC3310 2SC3497

    2SC3560

    Abstract: 2SB1020 pnp darlington 2SC3625 2SD1410 2SC3309 2SC3310 2SC3497 2SC3559 2SC3561 2SD1571
    Text: Application MAX. * t r Type No. NPN SWITCHING REG. PNP •c A 2SC3309 2SC3560 2 2SC3561 2SD1571 3 2SC3559 VCE (V) >c (A) (V) Cob TYP. (V) • <c (A) f=1MHz <pF) VCB (V) - 'c (A) 'B (A) (MHz) VCE SWTime TYP. ton tstg ■ (ms) (ms) (ms) *1 .0 *2.5 *1.0 tf ■


    OCR Scan     		PDF 2SC3309 20MIN. 2SC3560 10MIN. 2SC3561 2SD1571 2SC3559 2SC3560 2SB1020 pnp darlington 2SC3625 2SD1410 2SC3309 2SC3310 2SC3497 2SC3559 2SC3561 2SD1571

    2SC3560

    Abstract: 2SC3625 2SB1020 pnp darlington 2SC3309 2SC3310 2SC3497 2SC3559 2SC3561 2SD1571 2SC3562
    Text: T0220 CÜ> Application * MAX. * t r Type No. NPN SWITCHING REG. PNP •c A 2SC3309 2SC3560 2 2SC3561 2SD1571 3 2SC3559 V CE (sat) M AX, h FE PC Tc=25°C (W) VCE (V) >c (A) (V) 'c (A) 'B (A) Cob TYP. (MHz) VCE (V) 1c (A) f=1MHz <pF) VCB (V) , • SWTime TYP.


    OCR Scan     		PDF O-220 2SC3309 20MIN. 2SC3560 10MIN. 2SC3561 2SD1571 2SC3559 2SC3560 2SC3625 2SB1020 pnp darlington 2SC3309 2SC3310 2SC3497 2SC3559 2SC3561 2SD1571 2SC3562

    15J102

    Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
    Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811


    OCR Scan     		PDF 2SA949U50VI 2AC2229 2SA1145U50V) 2SC2705( 2SC2230 2SA817A 2SC1627A 2SA1811 2SC4707 2SA965 15J102 Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346

    Transistor 2SA 2SB 2SC 2SD

    Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
    Text: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)


    OCR Scan     		PDF O-126 O-126 T0-220AB, O-220 2SC4544 2SC4448 2SC3612 2BC4201 Transistor 2SA 2SB 2SC 2SD S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346