2SA821S
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SA821S TRANSISTOR PNP TO-92S 1. EMITTER FEATURES 2. COLLECTOR Power dissipation PD: 0.25 3. BASE W (Tamb=25℃) Collector current ICM: -0.03 A Collector-base voltage
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O-92S
2SA821S
O-92S
-50AX
-150V,
2SA821S
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SA821S TO – 92S TRANSISTOR PNP 1. EMITTER FEATURES z High Breakdown Voltage 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter
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O-92S
2SA821S
-150V
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datasheet of ic 555
Abstract: IC 555 2SA821
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA821 TRANSISTOR PNP TO—92 FEATURES Power dissipation PCM : 0.25 W（Tamb=25℃） Collector current ICM: -0.03 A Collector-base voltage V(BR)CBO : -210 V Operating and storage junction temperature range
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2SA821
O--92
270TYP
050TYP
datasheet of ic 555
IC 555
2SA821
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2SA821
Abstract: No abstract text available
Text: 2SA821 -0.03A , -210 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES High Breakdown Voltage Low Transition Frequency G A 2SA821-P 2SA821-Q 82~180
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2SA821
2SA821-P
2SA821-Q
2SA821-N
14-Feb-2011
-150V,
2SA821
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2SA821S
Abstract: No abstract text available
Text: Transys Electronics L I M I T E D TO-92S Plastic-Encapsulated Transistors 2SA821S TRANSISTOR PNP TO-92S 1. EMITTER FEATURES 2. COLLECTOR Power dissipation PD: 0.25 3. BASE W (Tamb=25℃) Collector current ICM: -0.03 A Collector-base voltage V(BR)CBO : -210 V
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O-92S
2SA821S
O-92S
-150V,
2SA821S
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2Sa821s
Abstract: No abstract text available
Text: 2SA821S Transistors High-voltage Amplifier Transistor −210V, −30mA 2SA821S zExternal dimensions (Unit : mm) zFeatures 1) High breakdown voltage, (VCER = −210V ) 2) Complements the 2SC1651S. SPT 2.0 (15Min.) 3Min. 3.0 4.0 0.45 2.5 0.5 0.45 5.0 (1) (2) (3)
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2SA821S
-210V,
-30mA)
-210V
2SC1651S.
15Min.
2Sa821s
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SA821 TRANSISTOR PNP 1. EMITTER FEATURES z High Breakdown Voltage z Low Transition Frequency 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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2SA821
-150V
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SA821S ＴＯ－９２Ｓ TRANSISTOR PNP 1. EMITTER FEATURES 2. COLLECTOR Power dissipation PD : 0.25W（Tamb=25℃） Collector current ICM: -0.03A Collector-base voltage
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O-92S
2SA821S
-210V
270TYP
050TYP
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2SD2422
Abstract: BC807-25T116 2SB1043 2sd2422 Datasheet DTA123JSATP 2SD2574 MMST8598T146 2SD1960 2sc5072 2SA1886
Text: Transistors Maintenance Product List 638 Transistors FMaintenance product list Maintenance model Alternate model Maintenance model Alternate model 2SA1543M 2SA933ASTP 2SC5040K 2SC2412KT146 2SA1549 2SA830STP 2SC5072 2SC4617TL 2SA1554 2SA821STP 2SD1469M 2SD1865TV2
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2SA1543M
2SA933ASTP
2SC5040K
2SC2412KT146
2SA1549
2SA830STP
2SC5072
2SC4617TL
2SA1554
2SA821STP
2SD2422
BC807-25T116
2SB1043
2sd2422 Datasheet
DTA123JSATP
2SD2574
MMST8598T146
2SD1960
2sc5072
2SA1886
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2SA821S
Abstract: 2SC1651S
Text: Transistors 2SA821S 2SC1651S 94L-183-A35 (94L-519-C35) 274 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the
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2SA821S
2SC1651S
94L-183-A35)
94L-519-C35)
2SA821S
2SC1651S
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2SA821S
Abstract: No abstract text available
Text: 2SA821S 2SA821S TO-92S TRANSISTOR PNP 1. EMITTER FEATURES 2. COLLECTOR Power dissipation PD: 0.25 3. BASE W (Tamb=25℃) Collector current ICM: -0.03 A Collector-base voltage V(BR)CBO : -210 V Operating and storage junction temperature range 123 TJ, Tstg: -55℃ to +150℃
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2SA821S
O-92S
-150V,
2SA821S
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2SA821
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA821 TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. EMITTER PCM : 0.25 W (Tamb=25℃) 2. COLLECTOR Collector current ICM : -0.03 A Collector-base voltage V V(BR)CBO : -210
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2SA821
-150V,
2SA821
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2SC1651S
Abstract: No abstract text available
Text: 2SC1651S Transistors High-voltage Amplifier Transistor 210V, 30mA 2SC1651S zExternal dimensions (Unit : mm) zFeatures 1) High breakdown voltage, (VCER = 210V ) 2) Complements the 2SA821S. SPT 2.0 (15Min.) 3Min. 3.0 4.0 0.45 2.5 0.5 0.45 5.0 (1) (2) (3) (1)Emitter
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2SC1651S
2SA821S.
15Min.
2SC1651S
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2SA821
Abstract: No abstract text available
Text: Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2SA821 TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. EMITTER PCM : 0.25 W (Tamb=25℃) 2. COLLECTOR Collector current ICM : -0.03 A Collector-base voltage V V(BR)CBO : -210 Operating and storage junction temperature range
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2SA821
-150V,
2SA821
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2SA821
Abstract: No abstract text available
Text: 2SA821 2SA821 TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. EMITTER PCM : 0.25 W (Tamb=25℃) 2. COLLECTOR Collector current ICM : -0.03 A Collector-base voltage V V(BR)CBO : -210 Operating and storage junction temperature range 3. BASE 1 2 3 TJ, Tstg: -55℃ to +150℃
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2SA821
-150V,
2SA821
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MBR1620CT
Abstract: 1.5Ke240 MBR5020 MBR5045PT BC337 AP6KE15C S9012 s9018 MP106 MB-106
Text: MCC PART INDEX Diodes PART NUMBER 1.5KE10(C)(A) 1.5KE100(C)(A) 1.5KE11(C)(A) 1.5KE110(C)(A) 1.5KE12(C)(A) 1.5KE120(C)(A) 1.5KE13(C)(A) 1.5KE130(C)(A) 1.5KE15(C)(A) 1.5KE150(C)(A) 1.5KE16(C)(A) 1.5KE160(C)(A) 1.5KE17(C)(A) 1.5KE170(C)(A) 1.5KE18(C)(A) 1.5KE180(C)(A)
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5KE10
5KE100
5KE11
5KE110
5KE12
5KE120
5KE13
5KE130
5KE15
5KE150
MBR1620CT
1.5Ke240
MBR5020
MBR5045PT
BC337
AP6KE15C
S9012
s9018
MP106
MB-106
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2SA821
Abstract: 2SA805 2SA806 2SA832 2sa805a toyo 10KO 2SA802 2SA820
Text: £• tt A I P N P = J = * » » y u » - QUALITY RELIABILITY v Î j ï W Æ J T Ï h ^ V : Ï Physical Dimension (Ta=25°C) ! mm) (Absolute Maximum Ratings) is -§■ 3Ê -180 V CBO 2SA802, 2SA832 -130 2SA806, 2SA821 -210 V -130 -30 T stg 125 °C -5 5-1 2 5
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2SA806,
2SA821
2SA805,
2SA820
2SA802,
2SA832
2SA805
2SA806
2SA832
2sa805a
toyo
10KO
2SA802
2SA820
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IMX5T108
Abstract: DTC144EN 4AE12 MP5C02 2SB1043 ICP-S2.3TN dta115ef DTA144TSATP DTC124EVA mmst8598t146
Text: Transistors •Maintenance product list Maintenance model Alternate model Maintenance model Alternate model 2SA1543M 2SA933ASTP 2SC5040K 2SC2412KT146 2SA1549 2SA830STP 2SC5072 2SC4617TL 2SA1554 2SA821STP 2SD1469M 2SD1865TV2 2SA1809 2SA1776TV2 2SD1778 2SD1855
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2SA1543M
2SA1549
2SA1554
2SA1809
2SA1861
2SA1886
2SA806
2SA825S
2SB1008
2SB1033
IMX5T108
DTC144EN
4AE12
MP5C02
2SB1043
ICP-S2.3TN
dta115ef
DTA144TSATP
DTC124EVA
mmst8598t146
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2SA821
Abstract: No abstract text available
Text: 2SA821 h ~ 7 > y X $ / T ransistors 9 Q A A 9 1 i t f ^ + v 7 ^ u - t ^ P N P '>>;=]> h 7 > v ' x $ • ¡g ^ J E fllJ i^ iiiW H ig h Voltage Amp. Epitaxial Planar PNP Silicon Transistor • • ^ U fix liilS I/D im e n s io n s U n it: mm ¥ i& 1) V c e r = — 2 1 0 V i : ¡ ^ ¡ B E E T ¿ 6 -So
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2SA821
2SA821
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Untitled
Abstract: No abstract text available
Text: ROHM CO LT] 40E •. 7 8 2 6 ^ » 000S3fi5 I RHM 3 2SA821 h 7 > y X ^ /'Transistors '7 ^ 2 7 - 0 ^ 7° ~ ^ P N P V U =l > h 7 > V X ^ /High Voltage Amp. Epitaxial Planar PNP Silicon Transistor 2SA821 • ftJF i\l'> £ l|/'D im en sio n s U n it: mm) • « ft
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000S3fi5
2SA821
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2SA821
Abstract: No abstract text available
Text: 2SA821S 2SC1651S Transistors I High-voltage Amplifier Transistor —210V, —30mA 2SA821S •F e a tu re s •A b s o lu te maximum ratings (T a = 2 5 1C ) -2 1 0 V ) ) H igh breakdow n voltage. (V c e r= * 2 ) C om plem ents the 2S C 1651 S. 1 •P a c ka g in g specifications and hra
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2SA821S
2SC1651S
--210V,
--30mA)
2SA821S
2SA821
94L-519-C
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2SA821
Abstract: No abstract text available
Text: 2SA821 h *7 > V ^ £ / T ransistors 2SA821 Epitaxial xk0^^'> 77;u:70u""^PNP Planar PNP Silicon Transistor ¡lE iÎJ ± ÎiJ Œ ^ ^ ffl/H ig h Voltage Amp. • 1 ^ t> i0 / D im e n s io n s U n it : mm) & & o V cer= - 2 1 0 V V • F e a tu re s I 1) High b reakd o w n voltag:
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2SA821
2SA821
-210V.
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1651S
Abstract: 2sC1651 transistor
Text: 2SA821S 2SC1651S Transistors High-voltage Amplifier Transistor —210V, —30mA I 2SA821S •F e a tu re s 1 ) High breakdown voltage, (V cer = — 2 1 0 V ) 2 ) Complements the 2SC1651 S. •A b s o lu te maximum ratings ( T a = 2 5 t ) Parameter Collector-base voltage
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2SA821S
2SC1651S
--210V,
--30mA)
2SA821S
2SA821
2SC1651
O-220,
0Dlb713
O-220FN
1651S
2sC1651 transistor
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2SD1960
Abstract: 2SD1468 2SB737 L120A 2SC1740 transistor 2SD786 2SD786S 2SC1740SLN 2SA933A 2SC2808
Text: Transistors TO-92 •SPT TO-92 and its smaller version, the SPT transistors, have conventional leads that fit into PWB mounting holes. Ammo box taped packaging for automated insertion is standard packaging, however, bulk is also available. Package Application
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00G7427
2SA1137
2SB737
2SD786
2SD786S
2SA825
2SA825S
2SA933A
2SA933AS
2SA933ALN
2SD1960
2SD1468
L120A
2SC1740 transistor
2SC1740SLN
2SC2808
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