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    2SA812QLT1

    Abstract: ESILICON
    Text: WILLAS FM120-M+ 2SA812xLT1 THRU General Purpose Transistors FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.


    Original     		PDF OD-123+ FM120-M+ 2SA812xLT1 OD-123H FM1200-M+ 2SC1623 FM120-MH FM130-MH FM140-M FM150-MH 2SA812QLT1 ESILICON

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    Abstract: No abstract text available
    Text: P & 2SA812S SEMICONDUCTOR FORW ARD INTERNATIONAL B L B C IR O H R S LTD. T EC H N IC A L DATA PNP EPITAXIAL SILICON TRANSISTOR L O W FR E Q U E N C Y A M PL IFIE R Package: SOT-23 * Complement to2SC1623S * Collector-Base Voltage: Vcbo—60V * Excellent Hfe linearity.


    OCR Scan     		PDF 2SA812S OT-23 to2SC1623S b-25V 062ii 300uS, -100uA -100mA -10mA