A1356 transistor
Abstract: 2SA1356 a1356 2SC3419
Text: 2SA1356 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1356 Audio Power Amplifier Applications • Unit: mm Low saturation voltage: VCE (sat) = −0.32 V (typ.) (IC = −500 mA, IB = −50 mA) • High collector power dissipation: PC = 1.2 W (Ta = 25°C)
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2SA1356
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A1356 transistor
2SA1356
a1356
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A1356 transistor
Abstract: 2SA1356
Text: 2SA1356 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1356 Audio Power Amplifier Applications • Unit: mm Low saturation voltage: VCE (sat) = −0.32 V (typ.) (IC = −500 mA, IB = −50 mA) • High collector power dissipation: PC = 1.2 W (Ta = 25°C)
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2SA1356
2SC3419
A1356 transistor
2SA1356
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A1356 transistor
Abstract: 2SA1356 2SA1356 A1356 2SC3419 A1356 A135
Text: 2SA1356 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1356 Audio Power Amplifier Applications • Unit: mm Low saturation voltage: VCE (sat) = −0.32 V (typ.) (IC = −500 mA, IB = −50 mA) • High collector power dissipation: PC = 1.2 W (Ta = 25°C)
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2SA1356
2SC3419
A1356 transistor
2SA1356
2SA1356 A1356
2SC3419
A1356
A135
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2SA1356
Abstract: 2SC3419 A1356 2SA1356 A1356
Text: 2SA1356 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1356 ○ 中電力増幅用 • 単位: mm : VCE (sat) = −0.32 V (標準) 飽和電圧が低い。 • コレクタ損失が大きい。: PC = 1.2 W (Ta = 25°C) •
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2SA1356
2SC3419
20070701-JA
2SA1356
2SC3419
A1356
2SA1356 A1356
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