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    2SA1300 TRANSISTOR Search Results

    2SA1300 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2SA1300 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA1300

    Abstract: 2SA1300GR 2sA1300 transistor 2SA1300-Y 2SA1300-BL 2SA1300-GR
    Text: 2SA1300 -2 A, -20 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES   High DC Current gain and excellent hFE linearity Low Saturation Voltage G 2SA1300-Y


    Original     		PDF 2SA1300 2SA1300-Y 2SA1300-GR 2SA1300-BL 19-Jan-2011 -10mA, 30MHz 2SA1300 2SA1300GR 2sA1300 transistor 2SA1300-Y 2SA1300-BL 2SA1300-GR

    2SA1300

    Abstract: No abstract text available
    Text: 2SA1300 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1300 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140~600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A)


    Original     		PDF 2SA1300 2SA1300

    2sA1300 transistor

    Abstract: 2SA1300
    Text: 2SA1300 2SA1300 TRANSISTOR PNP TO-92 FEATURES Power dissipation PCM : 0.75 W (Tamb=25℃) Collector current A ICM : -2 Collector-base voltage V V(BR)CBO : -20 Operating and storage junction temperature range 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 TJ : 150℃


    Original     		PDF 2SA1300 -10mA -100mA 30MHz 2sA1300 transistor 2SA1300

    2SA1300

    Abstract: No abstract text available
    Text: 2SA1300 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1300 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140~600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A)


    Original     		PDF 2SA1300 2SA1300

    2SA1300

    Abstract: No abstract text available
    Text: 2SA1300 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1300 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140~600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A)


    Original     		PDF 2SA1300 2SA1300

    2SA1300

    Abstract: No abstract text available
    Text: 2SA1300 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1300 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140~600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A)


    Original     		PDF 2SA1300 2SA1300

    2SC1815 NPN SOT-23

    Abstract: ss8050 sot-23 S8050 npn BC337 2N2907 SOT-23 s9018 to-92 S9014 SOT-23 2SC1008 noise S9014 To39 BC212C
    Text: MCC Small Signal Transistors Small Signal General Purpose Transistors Part No. and Polarity NPN PNP 2N3416 2N3904 2N3906 2N4400 2N4402 2N4401 2N4403 2N5172 2N6727 2SA562 2SA673 2SA673A 2SA733 2SA844 2SA950 2SA1015 2SA1300 2SB892 2SC380TM 2SC945 2SC1008 2SC1213


    Original     		PDF 2N3416 2N3904 2N3906 2N4400 2N4402 2N4401 2N4403 2N5172 2N6727 2SA562 2SC1815 NPN SOT-23 ss8050 sot-23 S8050 npn BC337 2N2907 SOT-23 s9018 to-92 S9014 SOT-23 2SC1008 noise S9014 To39 BC212C

    poweramplifier

    Abstract: 2SA1300
    Text: DC COMPONENTS CO., LTD. 2SA1300 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use Strobe flash and medium power amplifier applications. TO-92 Pinning 1 = Emitter 2 = Collector 3 = Base .190 4.83


    Original     		PDF 2SA1300 -50mA -10mA, poweramplifier 2SA1300

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors 2SA1300 TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. EMITTER MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter 2. COLLECTOR Value Units 3. BASE


    Original     		PDF 2SA1300 -10mA -100mA 30MHz

    2SA1300L

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXAL TYPE „ DESCRIPTION * Strobo Flash Applications. * Medium Power Amplifier Applications. „ FEATURES * High DC Current Gain and Excellent hFE Linearity. * hFE 1 =140-600, (VCE= -1V,IC= -0.5A)


    Original     		PDF 2SA1300 -50mA) OT-89 2SA1300L-xx-AB3-R 2SA1300G-xx-AB3-R 2SA1300L-xx-T92-B 2SA1300G-xx-T92-B 2SA1300L-xx-T92-K 2SA1300G-xx-T92-K 2SA1300L-xx-T92-R 2SA1300L

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR SI LI CON PN P EPI T AX AL T Y PE ̈ DESCRI PT I ON * Strobo Flash Applications. * Medium Power Amplifier Applications. ̈ FEAT U RES * High DC Current Gain and Excellent hFE Linearity.


    Original     		PDF 2SA1300 -50mA) 2SA1300L-xx-AB3-R 2SA1300G-xx-AB3-R 2SA1300L-xx-T92-B 2SA1300G-xx-T92-B 2SA1300L-xx-T92-K 2SA1300G-xx-T92-K 2SA1300L-xx-T92-R 2SA1300G-xx-T92-R

    2SA1300

    Abstract: No abstract text available
    Text: ST 2SA1300 PNP Silicon Epitaxial Planar Transistor for strobo flash and medium power amplifier applications. The transistor is subdivided into three groups, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SA1300 2SA1300

    2SA1300

    Abstract: 2sA1300 transistor transistor 2A pnp
    Text: UTC 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXAL TYPE DESCRIPTION *Strobo Flash Applications. *Medium Power Amplifier Applications. FEATURES *High DC Current Gain and Excellent hFE Linearity. *hFE 1 =140-600, (VCE= -1V,IC= -0.5A) *hFE(2)=60(Min.),120(Typ.),(VCE= -1V,IC= -4A)


    Original     		PDF 2SA1300 -50mA) QW-R201-045 2SA1300 2sA1300 transistor transistor 2A pnp

    2SA1300

    Abstract: No abstract text available
    Text: Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2SA1300 TRANSISTOR PNP TO-92 FEATURES Power dissipation PCM : 0.75 W (Tamb=25℃) Collector current A ICM : -2 Collector-base voltage V V(BR)CBO : -20 Operating and storage junction temperature range


    Original     		PDF 2SA1300 -10mA -100mA 30MHz 2SA1300

    2SA1300

    Abstract: QW-R208-012
    Text: UTC 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXAL TYPE DESCRIPTION *Strobo Flash Applications. *Medium Power Amplifier Applications. FEATURES 1 *High DC Current Gain and Excellent hFE Linearity. *hFE 1 =140-600, (VCE= -1V,IC= -0.5A) *hFE(2)=60(Min.),120(Typ.),(VCE= -1V,IC= -4A)


    Original     		PDF 2SA1300 -50mA) OT-89 QW-R208-012 2SA1300

    2SA1300

    Abstract: No abstract text available
    Text: ST 2SA1300 PNP Silicon Epitaxial Planar Transistor for strobo flash and medium power amplifier applications. The transistor is subdivided into three groups, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SA1300 2SA1300

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXAL TYPE DESCRIPTION *Strobo Flash Applications. *Medium Power Amplifier Applications. FEATURES *High DC Current Gain and Excellent hFE Linearity. *hFE 1 =140-600, (VCE= -1V,IC= -0.5A) *hFE(2)=60(Min.),120(Typ.),(VCE= -1V,IC= -4A)


    Original     		PDF 2SA1300 -50mA) -50mA QW-R201-045

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXAL TYPE  DESCRIPTION * Strobo Flash Applications. * Medium Power Amplifier Applications.  FEATURES * High DC Current Gain and Excellent hFE Linearity. * hFE 1 =140-600, (VCE= -1V,IC= -0.5A)


    Original     		PDF 2SA1300 -50mA) 2SA1300L-xx-AB3-R 2SA1300G-xx-AB3-R 2SA1300L-xx-T92-B 2SA1300G-xx-T92-B 2SA1300L-xx-T92-K 2SA1300G-xx-T92-K OT-89 QW-R208-012

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors 2SA1300 TRANSISTOR PNP TO-92 FEATURES z High DC Current Gain and Excellent hFE Linearity z Low Saturation Voltage 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted)


    Original     		PDF 2SA1300 -10mA -100mA 30MHz

    TO92 LOW VCE PNP

    Abstract: No abstract text available
    Text: 2SA1300 PNP TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High DC Current gain and excellent hFE linearity Low saturation voltage MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original     		PDF 2SA1300 -10mA -100mA 30MHz TO92 LOW VCE PNP

    2SA1300

    Abstract: No abstract text available
    Text: ST 2SA1300 PNP Silicon Epitaxial Planar Transistor for strobo flash and medium power amplifier applications. The transistor is subdivided into three groups, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SA1300 2SA1300

    2sA1300 transistor

    Abstract: 2SA1300
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA1300 TRANSISTOR PNP TO-92 FEATURES Power dissipation PCM : 0.75 W (Tamb=25℃) Collector current A ICM : -2 Collector-base voltage V V(BR)CBO : -20 Operating and storage junction temperature range


    Original     		PDF 2SA1300 -10mA -100mA 30MHz 2sA1300 transistor 2SA1300

    2SA1300

    Abstract: No abstract text available
    Text: ST 2SA1300 PNP Silicon Epitaxial Planar Transistor for strobo flash and medium power amplifier applications. The transistor is subdivided into three groups, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SA1300 2SA1300

    IC2A

    Abstract: No abstract text available
    Text: f 2SA1300 SEMICONDUCTOR 9 FORWARD INTERNATIONAL ELECTRONICS L ID . TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER STROBO FLASH APPLICATION * High DC Current Gain and Excellent hfe Linearity : h fe l = 140-600 (Vce=lV, Io=0.5A) : hf<2)=70(M iiL) (V ce=l Vf Ic=2A).


    OCR Scan     		PDF 2SA1300 Tamb-25 -100uA -50mA -500mA IC2A