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    2SA117 Search Results

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    2SA1175-A Renesas Electronics Corporation Bipolar Power Transistors Visit Renesas Electronics Corporation
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    2SA117 Price and Stock

    Rochester Electronics LLC 2SA1179N6-CPA-TB-E

    TRANS PNP 50V 0.15A
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    Rochester Electronics LLC 2SA1179N6-TB-E

    TRANS PNP 50V 0.15A 3CP
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    Rochester Electronics LLC 2SA1179-6-TB-E

    PNP SILICON TRANSISTOR
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    onsemi 2SA1179N6-CPA-TB-E

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    2SA117 Datasheets (117)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA117 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SA117 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA117 Unknown Cross Reference Datasheet Scan PDF
    2SA117 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SA117 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SA117 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA117 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1170 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1170 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SA1170 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1170 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SA1170 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1170 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1170 Sanken Electric Transistor For Power Amplifier Scan PDF
    2SA1171 Hitachi Semiconductor Silicon PNP Epitaxial Original PDF
    2SA1171 Hitachi Semiconductor Silicon PNP Transistor Original PDF
    2SA1171 Kexin Silicon PNP Epitaxial Original PDF
    2SA1171 Renesas Technology Silicon PNP Epitaxial Original PDF
    2SA1171 TY Semiconductor Silicon PNP Epitaxial - SOT-23 Original PDF
    2SA1171 Unknown Transistor Shortform Datasheet & Cross References Scan PDF

    2SA117 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC2774

    Abstract: 2SA1170 transistor 12v 8A
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1170 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -200V(Min) ·High Power Dissipation ·Complement to Type 2SC2774 APPLICATIONS ·Designed for power amplifier and general purpose


    Original     		PDF 2SA1170 -200V 2SC2774 -200V; 2SC2774 2SA1170 transistor 12v 8A

    2SA1179

    Abstract: transistor marking 3k
    Text: 2SA1179 -0.15A , -55V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  High breakdown voltage A L 3 3 C B Top View 1 MARKING 1 K Product Marking Code


    Original     		PDF 2SA1179 OT-23 -50mA, 28-Jan-2011 -10mA 2SA1179 transistor marking 3k

    2SA1175

    Abstract: No abstract text available
    Text: ST 2SA1175 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, R, J, H, F, E and K according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SA1175 100mA, 100Hz 2SA1175

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 2SA1179 TRANSISTOR Plastic-Encapsulate Transistors SOT-23 PNP 3 FEATURES . High breakdown voltage 1 1. BASE 2 2. EMITTER MARKING: M 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol


    Original     		PDF OT-23 2SA1179 -50mA -10mA

    TRANSISTOR BI 340

    Abstract: 2sc2774
    Text: , LJnc. TELEPHONE: 973 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. FAX: (973) 376-8960 2SA1170 Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- PIN 1.BASE 2.COLLECTOR V(BR)CEo= -200V(Min) • High Power Dissipation


    Original     		PDF 2SA1170 -200V 2SC2774 MT-200 -50mA; -200V; TRANSISTOR BI 340 2sc2774

    2SA1177

    Abstract: TA-2005 N851G
    Text: 注文コード No.N 8 5 1 G 2SA1177 No. N851G O0899 単品カタログ No.C851F とさしかえてください。 2SA1177 PNP エピタキシァルプレーナ形シリコントランジスタ 高周波一般増幅用 用途 ・FM RF 増幅 , ミキサ , 発振 , コンバータ , IF 増幅用に最適である。


    Original     		PDF 2SA1177 N851G O0899 C851F 230MHz ITR02986 ITR02985 ITR02987 100MHz 2SA1177 TA-2005 N851G

    Untitled

    Abstract: No abstract text available
    Text: 2SA1171 Silicon PNP Epitaxial REJ03G0638-0200 Previous ADE-208-1010 Rev.2.00 Aug.10.2005 Application Low frequency small signal amplifier Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Emitter 2. Base 3. Collector 3 1 2 Absolute Maximum Ratings


    Original     		PDF 2SA1171 REJ03G0638-0200 ADE-208-1010) PLSP0003ZB-A

    2SA1175

    Abstract: transistor 2sa1175
    Text: ST 2SA1175 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, R, J, H, F, E and K according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SA1175 100mA, 100Hz 2SA1175 transistor 2sa1175

    2SA1175

    Abstract: hfe 300 pin configuration transistor 2sa1175 TRANSISTOR K 135
    Text: ST 2SA1175 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, R, J, H, F, E and K according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SA1175 100mA, 100Hz 2SA1175 hfe 300 pin configuration transistor 2sa1175 TRANSISTOR K 135

    2SA1174

    Abstract: No abstract text available
    Text: ST 2SA1174 PNP Silicon Epitaxial Planar Transistor Audio frequency low noise amplifier. The transistor is subdivided into three group, P, F and E, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SA1174 2SA1174

    2SA1170

    Abstract: 2sc2774
    Text: Inchange Semiconductor Product Specification 2SA1170 Silicon PNP Power Transistors DESCRIPTION •With MT-200 package ·High power dissipation ·Complement to type 2SC2774 APPLICATIONS ·Audio and general purpose applications PINNING see Fig.2 PIN DESCRIPTION


    Original     		PDF 2SA1170 MT-200 2SC2774 MT-200) -200V; 2SA1170 2sc2774

    2SA1171

    Abstract: Hitachi DSA0076 2SA872
    Text: 2SA1171 Silicon PNP Epitaxial ADE-208-1010 Z 1st. Edition Mar. 2001 Application Low frequency small signal amplifier Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SA1171 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage


    Original     		PDF 2SA1171 ADE-208-1010 2SA1171 Hitachi DSA0076 2SA872

    10u 35v

    Abstract: 2SA1179 sot 23 PNP
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 2SA1179 TRANSISTOR Plastic-Encapsulate Transistors SOT-23 PNP FEATURES . High breakdown voltage 1. BASE 2. EMITTER MARKING: M 3. COLLECTOR MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter


    Original     		PDF OT-23 2SA1179 -50mA -10mA 10u 35v 2SA1179 sot 23 PNP

    SMD TRANSISTOR MARKING NK

    Abstract: No abstract text available
    Text: Transistors SMD Type NPN Silicon Epitaxial Transistor 2SC2780 SOT-89 Unit:mm 1.50 ±0.1 4.50±0.1 1.80±0.1 • Features 2.50±0.1 4.00±0.1 ● High Collector-emitter voltage. ● Complements to PNP type 2SA1173 0.53±0.1 0.80±0.1 3 0.44±0.1 0.40±0.1 0.48±0.1


    Original     		PDF 2SC2780 OT-89 2SA1173 -10mA SMD TRANSISTOR MARKING NK

    Untitled

    Abstract: No abstract text available
    Text: 2SA1179 SOT-23 Transistor PNP 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features — High breakdown voltage MARKING: M MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -55 V VCEO Collector-Emitter Voltage


    Original     		PDF 2SA1179 OT-23 OT-23 -50mA -10mA

    2SA1171

    Abstract: 2SA872 Hitachi DSA00397
    Text: 2SA1171 Silicon PNP Epitaxial Application Low frequency small signal amplifier Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SA1171 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO –90 V Collector to emitter voltage


    Original     		PDF 2SA1171 2SA1171 2SA872 Hitachi DSA00397

    2SA1179N6

    Abstract: No abstract text available
    Text: 2SA1179N/2SC2812N Ordering number : EN7198B SANYO Semiconductors DATA SHEET 2SA1179N/2SC2812N PNP / NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amp Applications Features • • Miniature package facilitates miniaturization in end products


    Original     		PDF 2SA1179N/2SC2812N EN7198B 2SA1179N 2SA1179N6

    Untitled

    Abstract: No abstract text available
    Text: 2SA1171PE Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)90è V(BR)CBO (V)90 I(C) Max. (A)50m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)500n @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.400 h(FE) Max. Current gain.


    Original     		PDF 2SA1171PE Freq200M

    2SA1170

    Abstract: 2SC2774 RL4A
    Text: SavantIC Semiconductor Product Specification 2SA1170 Silicon PNP Power Transistors DESCRIPTION •With MT-200 package ·High power dissipation ·Complement to type 2SC2774 APPLICATIONS ·Audio and general purpose applications PINNING see Fig.2 PIN DESCRIPTION


    Original     		PDF 2SA1170 MT-200 2SC2774 MT-200) -200V; 2SA1170 2SC2774 RL4A

    Hitachi 2SA

    Abstract: Hitachi DSA002754 2sa872
    Text: 2SA1171 Silicon PNP Epitaxial Application Low frequency small signal amplifier Outline 2SA1171 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO –90 V Collector to emitter voltage VCEO –90 V Emitter to base voltage


    Original     		PDF 2SA1171 Hitachi 2SA Hitachi DSA002754 2sa872

    2018a

    Abstract: 2SC2812 2SA1179 X-2476 A1179
    Text: S A W f O - 3 .- X - X ^ 0 9 0 0 ,6 9 1 0 ’87 88 7 - 9 ~f v 9 i «IJ-T- * f 2SA1179/2SC2812 7 y «Ä • { nNa32í8 6199 No.6901» t ^ P N P / N P N 1 1 ? 5» =* V 7 J ¡^ ¿ 5 ^ ? VO tzih*\i y h iO ^ Ç H .-ft.ïJlS .H k ^ ô riB îT '*« fit rn "C & £ o


    OCR Scan     		PDF 2SA1179/2SC2812 2SA11790 2SA1179 T370-05 6199KNÂ X-2476, A1179/2SC2812 2018a 2SC2812 2SA1179 X-2476 A1179

    2SA1173

    Abstract: No abstract text available
    Text: NEC SILICON TRANSISTOR ELECTRON DEVICE 2S A 1173 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SA1173 is designed fo r audio frequency pream plifier application, especially in H yb rid Integrated Circuits. FEATURES PACKAGE DIMENSIONS


    OCR Scan     		PDF 2SA1173 2SC2780 2SA1173

    2SA1173

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR 2SA1173 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DE SC R IPTIO N The 2S A 1173 is designed fo r audio frequency p ream plifier app lica tion, especially in H y b rid Integrated Circuits. FEATURES • W orld Standard M inia tu re Package


    OCR Scan     		PDF 2SA1173 2SA1173 2SC2780 A1173

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:EN 851G SAiYO No.851G _ 2SA1177 PNP Epitaxial Planar Silicon Transistor i HF Amp Applications Use . Ideally suited for use in FM RF amplifiers, mixers, oscillators, converters, IF amplifiers. Features . High fT 230MHz typ. and small cre(l.lpF typ.).


    OCR Scan     		PDF 2SA1177 230MHz 3187AT/3075KI/1313/8182/2172KI/TS