Untitled
Abstract: No abstract text available
Text: IGBTs 2PG401 Insulated Gate Bipolar Transistor • Features unit: mm ● High breakdown voltage: VCES = 400V ● Allowing to control large current: IC peak = 130A ● Allowing to provide with the surface mounting package 7.0±0.3 3.5±0.2 7.2±0.3 ■ Applications
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2PG401
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130A
Abstract: 2PG401
Text: IGBTs 2PG401 Insulated Gate Bipolar Transistor • Features unit: mm ● High breakdown voltage: VCES = 400V ● Allowing to control large current: IC peak = 130A ● Allowing to provide with the surface mounting package 7.0±0.3 3.5±0.2 7.2±0.3 ■ Applications
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2PG401
130A
2PG401
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2PG401
Abstract: No abstract text available
Text: IGBTs 2PG401 Insulated Gate Bipolar Transistor • Features unit: mm M Di ain sc te on na tin nc ue e/ d ● High breakdown voltage: VCES = 400V ● Allowing to control large current: IC peak = 130A ● Allowing to provide with the surface mounting package
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Original
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PDF
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2PG401
2PG401
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2PG401
Abstract: No abstract text available
Text: IGBTs 2PG401 Insulated Gate Bipolar Transistor • Features unit: mm ● High breakdown voltage: VCES = 400V ● Allowing to control large current: IC peak = 130A ● Allowing to provide with the surface mounting package 7.0±0.3 3.5±0.2 7.2±0.3 ■ Applications
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2PG401
2PG401
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"Intelligent Power Device"
Abstract: "Solenoid Driver" transistor MIP504 MIP504 MIP508 MIP510 MIP511 MIP512 MIP513 MIP514
Text: FETs, IPD, IGBTs, GaAs MMICs • IPD Intelligent Power Device Application EL Driver Application Part No. Output MOS FET Drive Voltage VCC (V) VDSS (V) ID (mA) Oscillating Frequency fOSC (kHz) 2.5 to 3.5 100 20/70 120 MIP805 Input Voltage VIN (V) Output Breakdown Voltage
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MIP805
MIP504
MIP510
MIP511
O-92NL-A1
MIP512
MIP514
MIP704
"Intelligent Power Device"
"Solenoid Driver"
transistor MIP504
MIP504
MIP508
MIP510
MIP511
MIP512
MIP513
MIP514
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MIP161
Abstract: MIP164 D82R MIP103 mip160
Text: FET, IGBT, IPD • IGBTs Application Type No. Absolute Maximum Ratings lc peak lc (A) (V) (A) VcES Electrical Characteristics td (on) td (off) (ns) (ns) lc (mA) V ce (sat) (V) Packge tf (ns) No. 2PG301 400 20 130 < 2 .2 5 20 25 250 2 N Type D43 2PG302 400
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2PG301
2PG302
2PG351
2PG352
2PG401
oss-650V
controP-28D
MIP160/170
MIP161
MIP162/172
MIP164
D82R
MIP103
mip160
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k3025
Abstract: K3192 k3047 K2538 k2960 K2923 K3035 K3165 K3028 k2576
Text: GaAs MMIC Microwave Monolithic IC # For Amplifiers U /V CATV Wide Band Amp. Buffer Amp. Type No. NF (dB) PG (dB) Measuring Condition Circuit Configuration O .—. > ^ Application (mA) GN1010 2.0 9 3 25 100 to 2000 GN1042 2.2 10 3 40 50 to 800 GN1044 1.8
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GN1010
GN1042
GN1044
GN8061
GN8062
01076B
N01077N
01087B
01091B
01093B
k3025
K3192
k3047
K2538
k2960
K2923
K3035
K3165
K3028
k2576
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