AL102 ATES
Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible
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Trans-611
DT1521
2N2270
BC107-182KS
ESC182KAS
ESC182KBS
ESC1Q8-183KS
EiC183KBS
8C183KCS
BC109-184KS
AL102 ATES
2N2222A mps
KR206
AD149
TIS58
TIS88
SFT353
2N2431
2N4265
BFY29
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2N5586
Abstract: 2N5585 2N5911 2N5584 2N5912 NF5011 NPD5584 NPD5586 U440 U441
Text: National Semiconductor N-Channel JFETs co m Wide Band—Low Noise Dual JFETs n o Operating Conditions for these Characteristics VqS1-2 Drift C fu C n , BV G o. CMRR Vfl» •css Gfe Go k i _2 ■q H G 2 Go n G f. Vr R Of* ■g Igss loss Process Pkg. Vos iftV /X
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2N5584
2N5585
2N5586
2N5911
2NS912
NPD5584
NPD5585
NPD5586
NF5011
NF5012
2N5912
U440
U441
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2N5912
Abstract: 2N5911 2N5912 jfet dss2 IT5911 IT5912
Text: 2N 5911, 2N 5912 IT 5 9 1 1 , IT 5 9 1 2 D ual M onolithic N -C h an n el JF E T FEATURES • Tracking < 20 juV/°C • gfs < 5000 jUmho, 0 - 1 0 0 MHz • Matched V GS. A V GS/ A T . I G.9 fs, PIN CONFIGURATION TO-99 CHIP TOPOGRAPHY TO-71 6022 0037 0037 ' 002? ' 0027
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2N5911,
2N5912
IT5911,
IT5912
IT5911
2N5911
2N5911/W
2N5911/D
2N5912 jfet
dss2
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2N5911
Abstract: 2n5912 2N5911-12 X2N5912 2NS912
Text: Dual N-Channel JFET High Frequency Amplifier CORPORATION 2N5911/2N5912 FEATURES ABSOLUTE MAXIMUM RATINGS T a = 25°C unless otherwise specified • Tight Tracking • Low Insertion Loss • Good Matching Gate-Drain or Gate-Source Voltage . -25V
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2N5911
/2N5912
10sec)
367mW
500mW
2N5911
2NS912
300nA,
1A4432S
000CH33
2n5912
2N5911-12
X2N5912
2NS912
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