CX-1050-SD-HT
Abstract: cx-1050-sd CX-1030-BR-HT CX-1070-SD ac resistance bridge Lake Shore Cryotronics CX-1030-sD CX-1030-BR STYCAST 1070 CX-1080
Text: 1-16 HT Cernox RTDs High Temperature HT Cernox RTDs • 0.3 K to 420 K useful range in a single device • Low magnetic field-induced errors • High sensitivity at low temperatures and good sensitivity over a broad range • Excellent resistance to ionizing
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CX-1050-SD-HT
cx-1050-sd
CX-1030-BR-HT
CX-1070-SD
ac resistance bridge
Lake Shore Cryotronics
CX-1030-sD
CX-1030-BR
STYCAST 1070
CX-1080
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NE461M02
Abstract: NE461M02-T1-AZ 2SC5337 S21E
Text: NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • • PACKAGE OUTLINE M02 HIGH COLLECTOR CURRENT: 250 mA MAX NEW HIGH GAIN POWER MINI-MOLD PACKAGE SOT-89 TYPE HIGH OUTPUT POWER AT 1 dB COMPRESSION: 27 dBm TYP at 1 GHz
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OT-89
NE461M02
NE461M02
NE461M02-T1-AZ
2SC5337
S21E
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TRANSISTOR sot-563
Abstract: 186 diod ISO-14001 ISO-9000 ISO-9002 SC-75 zeners diod continental SOD123 Semicon volume 1
Text: QUALITY PARTS Discrete Semiconductors Diodes Incorporated 2000 Annual Report MAKE Successful Solutions FINANCIAL HIGHLIGHTS in thousands except per share data Net sales Gross profit Selling, general and administrative expenses Income from operations Interest expense, net
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A5109
TRANSISTOR sot-563
186 diod
ISO-14001
ISO-9000
ISO-9002
SC-75
zeners diod
continental SOD123
Semicon volume 1
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UPC3227TB
Abstract: marking C1G
Text: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3227TB 5 V, SILICON GERMANIUM MMIC WIDEBAND AMPLIFIER DESCRIPTION The µPC3227TB is a silicon germanium SiGe monolithic integrated circuit designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.
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UPC3227TB
PC3227TB
UPC3227TB
marking C1G
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ba 2nd years
Abstract: ba 2nd year
Text: Using the Financial Functions of the TI-83 or TI-83 Plus www.ti.com/calc/83 and www.ti.com/calc/83plus This guide is to help you quickly get started using the Time-Value-of-Money features of the TI-83 and TI-83 Plus. Additional features are covered in Chapter 14 of the User Guide available at
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TI-83
com/calc/83
com/calc/83plus
ba 2nd years
ba 2nd year
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disadvantages of the energy meter
Abstract: block diagram of watt meter rogowski coil analog integrator single phase electronic energy meter block diagram rogowski coil integrator Single Phase Energy Meter energy meter circuit diagram energy meter using ade7755 measurement of power using microcontroller rms calculation by microcontroller
Text: Energy Data Converters Reduce Cost and Simplify Meter Design Etienne Moulin, Analog Devices Presentation outline Introduction: Energy Metering requirements and Market Trend Energy Meter Architectures: Pros and Cons 1. Multi-Chip solution 2. Multi-Chip solution
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JEP155
Abstract: No abstract text available
Text: Product Folder Sample & Buy Support & Community Tools & Software Technical Documents TRF37A32, TRF37B32, TRF37C32 SLASE37 – MAY 2014 TRF37x32 Dual Down Converter Mixer With Integrated IF AMP 1 Features 3 Description • • • • • • • • • •
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TRF37A32,
TRF37B32,
TRF37C32
SLASE37
TRF37x32
JEP155
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T491A475K010
Abstract: IS-136 TRF3703 TRF370333
Text: TRF3703 www.ti.com . SLWS184F1 – MARCH 2006 – REVISED APRIL 2008 0.4-GHz TO 4-GHz QUADRATURE MODULATOR
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TRF3703
SLWS184F1
CDMA2000,
IS-136,
EDGE/UWC-136
75-dBc
11-dBm
T491A475K010
IS-136
TRF3703
TRF370333
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transistor marking c3n
Abstract: PC2710TB UPC3226TB C3J marking upc3225tb marking c1d marking c3j
Text: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3226TB 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µPC3226TB is a silicon germanium SiGe monolithic integrated circuit designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.
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UPC3226TB
PC3226TB
transistor marking c3n
PC2710TB
UPC3226TB
C3J marking
upc3225tb
marking c1d
marking c3j
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PC3224TB
Abstract: 2F P marking PC321 UPC3227TB PC2712T PC3227TB-E3-A
Text: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3227TB 5 V, SILICON GERMANIUM MMIC WIDEBAND AMPLIFIER DESCRIPTION The PC3227TB is a silicon germanium SiGe monolithic integrated circuit designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.
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UPC3227TB
PC3227TB
PC3224TB
2F P marking
PC321
UPC3227TB
PC2712T
PC3227TB-E3-A
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EGR Valve Position Sensor
Abstract: Throttle PEDAL Position Sensor RESISTOR 552-1997 miniature mass air flow sensor CTS Series 280 Rotary Potentiometer hudson industries award 586 CTS RESISTOR NETWORK 761 CTS RESISTOR NETWORK circular connector
Text: 1 9 9 8 A N N U A L R E P O R T C O R P O R A T I O N Corporate Profile CTS Corporation designs, manufactures and sells a broad line of electronic components and electronic assemblies, primarily serving the electronic needs of original equipment manufacturers OEMs .
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Untitled
Abstract: No abstract text available
Text: KNP0932, 1145, 1550, 1760, 2480 Wire Wound Leaded Resistors Wire Wound Leaded Resistors •Features －Super heat dissipation, －Instant overload capability －Wide resistance range : 0.1Ω~100Ω －Small linear temperature coefficient －Low noise figure and without annual shift on resistance value
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KNP0932,
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Untitled
Abstract: No abstract text available
Text: •■ b S M 'ìflS 'ì 0G 17134 T77 MITSUBISHI RF POWER MODULE ■ M 5 7 7 1 5 144-148MHZ, 12.5V, 13W, FM MOBILE RADIO BLOCK DIAGRAM PIN : ©Pin @VCCI VCC 2 ®P0 ®GND @> : RF INPUT : 1st. DC SUPPLY : 2nd. DC SUPPLY : RF OUTPUT : FIN ABSOLUTE MAXIMUM RATINGS Tc = 25 “C unless otherwise noted
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144-148MHZ,
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M57719
Abstract: M57719N m577 rf power transistor h2
Text: MITSUBISHI RF POWER MODULE M57719N 142-163MHz, 12.5V, 14W, FM MOBILE RADIO OUTLINE DRAWING Dimensions in mm BLOCK DIAGRAM GHr > II— PIN : P in : RF INPUT @VCC1 : 1st. DC SUPPLY @VCC2 : 2nd. DC SUPPLY 0PO : RF OUTPUT G N D : FIN H2 ABSOLUTE MAXIMUM RATINGS Tc = 25C
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M57719N
142-163MHz,
M57719
M57719N
m577
rf power transistor h2
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P04 transistor
Abstract: transistor p04 12W 02 transistor M57789 transistor zg transistor po3 transistor TC 10 12W 01 TRANSISTOR rf transistor s parameters
Text: MITSUBISHI RF POWER MODULE M57789 889-915MHz, 12.5V, 12W, FM MOBILE RADIO PIN : P in : RF IN P U T © V C C I : 1s t. DC S U P P L Y VBB : B A S E B IA S S U P P L Y © V C C 2 : 2 n d . DC S U P P L Y ©PO : RF O U T P U T © G N D : FIN ABSOLUTE MAXIMUM RATINGS Tc = 2 5 <1C unless otherwise noted
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M57789
889-915MHz,
P04 transistor
transistor p04
12W 02 transistor
M57789
transistor zg
transistor po3
transistor TC 10
12W 01 TRANSISTOR
rf transistor s parameters
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M57735
Abstract: CC212 PQ-32/9060
Text: MITSUBISHI RF POWER MODULE M57735 50-54MHZ, 12.5V, 19W, SSB MOBILE RADIO BLOCK DIAGRAM <D l > PIN : Pin : RF IN PU T © V C C I : 1st. DC SUPPLY VBB : BASE BIAS SUPPLY © VC C 2 : 2nd. DC SUPPLY ®P0 : RF O U TPU T © G N D : FIN ABSOLUTE MAXIMUM RATINGS Tc = 25 °C unless otherwise noted
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M57735
50-54MHZ,
M57735
CC212
PQ-32/9060
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M57774
Abstract: transistor zg 220-225MHZ M5777 X4730 rf power transistor h2 Mitsubishi transistor rf final
Text: MITSUBISHI RF POWER MODULE M57774 220-225MHZ, 12.5V, 30W, FM MOBILE RADIO OUTLINE DRAWING BLOCK DIAGRAM Dimensions in mm — II— IHD PIN : Pin : RF INPUT ©VCC1 : 1st. DC SUPPLY V C C 2 : 2nd. DC SUPPLY ®PO : RF OUTPUT ® G N D : FIN H2 ABSOLUTE MAXIMUM RATINGS Tc = 25 °Q unless otherwise noted
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M57774
220-225MHZ,
in--30
M57774
transistor zg
220-225MHZ
M5777
X4730
rf power transistor h2
Mitsubishi transistor rf final
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE ^ 5 4 ^ 0 5 ^ 0ül712«i bQT • M57714 450-470MHZ, 12.5V, 7W, FM MOBILE RADIO OUTLINE DRAWING Dimensions in mm BLOCK DIAGRAM Hr PIN : © P in : RF INPUT V C C l : 1st. DC SUPPLY @VCC 2 : 2nd. DC SUPPLY ® V c c 3 : 3rd. DC SUPPLY
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M57714
450-470MHZ,
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M67717
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE M67717 872-905MHZ, 12.5V, 7W, FM MOBILE RADIO OUTLINE DRAWING BLOCK DIAGRAM Dimensions in mm © 1 PIN : 5 Pin : RF INPUT © V C C I : 1st. DC SUPPLY ® VC C 2 : 2nd. DC SUPPLY @VCC3 : 3rd. DC SUPPLY @ PO : RF OUTPUT ® G N D : FIN
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M67717
872-905MHZ,
M67717
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TH 2190 Transistor
Abstract: No abstract text available
Text: DG17Eôb E5b • MITSUBISHI RF POWER MODULE M57791 890-915MHz, 12.5V, 7W, FM MOBILE RADIO OUTLINE DRAWING Dimensions in mm P IN : P in : RF IN P U T V c c i : 1 s t. D C S U P P L Y ®VCC2 : 2nd. D C S U P P L Y ®VCC3 : 3rd. D C S U P P L Y ® Po : RF
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DG17EÃ
M57791
890-915MHz,
TH 2190 Transistor
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Untitled
Abstract: No abstract text available
Text: b 2 4 ci f l e cì DDITTST HYBRID ANTENNA SWITCH Ö3S M D 0 0 1 HL 3 3 0 —400M Hz, 25W , ANTENNA SWITCH MINIATURE RF ANTENNA SWITCH MD001HL is designed to cover 330 — 400MHz, 25W, an tenna switch module. • Small, Easilly Mounted Package. • High Isolation: 38dBTyp.
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MD001HL
400MHz,
38dBTyp.
-70dBc
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SC-15
Abstract: EEPROM flotox Japanese Transistor Cross References
Text: u these components. In this paper, we will focus on the technology factors by comparing the three dom inant E2 technologies to date, and giving our own viewpoint on the development in the market place. COMPARISON AND TRENDS IN TO DAY’S DOM INANT E2 TECHNOLOGIES
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transistor p02
Abstract: M57704M transistor 60 13w p02 transistor
Text: MITSUBISHI RF POWER MODULE M57704M 430-450MHZ, 12.5V, 13W, FM MOBILE RADIO O U T LIN E D R AW IN G Dim ensions in mm BLO CK DIAG RAM <§> ©H h h*^>HI— \— PIN : © P in : RF INPUT © V C C I : 1st. DC SUPPLY ® VC C 2 : 2nd. DC SUPPLY © VC C 3 : 3rd. DC SUPPLY
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M57704M
430-450MHz,
transistor p02
M57704M
transistor 60 13w
p02 transistor
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE M57704M 430-450MHZ, 12.5V, 13W, FM MOBILE RADIO O U T LIN E DR A W IN G Dimensions in mm BLO CK DIAG RAM <D ©HH- PIN : © P in © Vcci VCC2 ©VCC3 ©PO ©GND : : : : : : RF INPUT 1st. DC SUPPLY 2nd. DC SUPPLY 3rd. DC SUPPLY
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M57704M
430-450MHZ,
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