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    2N7639-GA SPICE

    Abstract: No abstract text available
    Text: 2N7639-GA Section VII: SPICE Model Parameters Please copy this code from the SPICE model PDF file on our website into LTSPICE (version 4) software for simulation of the 2N7639-GA. * MODEL OF GeneSiC Semiconductor Inc.


    Original     		2N7639-GA sic/sjt/2N7639-GA 2N7639-GA. 12-DEC-2014 2N7639-GA 8338E-48 0733E-26 2281E-10 33957E-9 20E-03 2N7639-GA SPICE PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7639-GA Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •         RoHS Compliant 250 °C maximum operating temperature Temperature independent switching performance Electrically isolated base-plate


    Original     		2N7639-GA 2N7639-GA 03E-47 72E-28 68E-10 72E-09 00E-02 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7639-GA Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •         RoHS Compliant 250 °C maximum operating temperature Temperature independent switching performance Electrically isolated base-plate


    Original     		2N7639-GA 2N7639 03E-47 72E-28 68E-10 72E-09 00E-02 2N7639-GA PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7639-GA Normally – OFF Silicon Carbide Junction Transistor VDS = 600 V RDS ON = 60 mΩ ID (Tc = 25°C) = 32 A hFE (Tc = 25°C) = Features Package •           RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate


    Original     		2N7639-GA 2N7639-GA 8338E-48 0733E-26 2281E-10 33957E-9 20E-03 PDF