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    2N7488 TRANSISTOR Search Results

    2N7488 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2N7488 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N7550

    Abstract: 2N7520 2n7546 2n7545 2N7549 2n7479 2N7481 2N7480 2N7471 2N7476
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 30 April 2009. METRIC MIL-PRF-19500/741A 30 January 2009 SUPERSEDING MIL-PRF-19500/741 14 March 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED


    Original     		PDF MIL-PRF-19500/741A MIL-PRF-19500/741 MIL-PRF-19500. 2N7550 2N7520 2n7546 2n7545 2N7549 2n7479 2N7481 2N7480 2N7471 2N7476