Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encap sulate MOSFETS 2N7002X SOT-89-3L MOSFET N-Channel 11 2 2 3 3 FEA TURES z High density cell design for low RDS(on) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability
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Original
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PDF
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OT-89-3L
2N7002X
OT-89-3L
500mA
200mA
115mA
500mA,
500mA
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encap sulate MOSFETS 2N7002X SOT-89-3L MOSFET N-Channel 11 2 2 3 3 FEA TURES z High density cell design for low RDS(on) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability
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Original
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PDF
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OT-89-3L
2N7002X
OT-89-3L
500mA
200mA
115mA
500mA,
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate MOSFETS SOT-89 2N7002X MOSFET N-Channel 11 2 2 3 3 FEATURES z High density cell design for low RDS(on) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability
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Original
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PDF
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OT-89
OT-89
2N7002X
250mA
200mA
115mA
500mA,
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SOT23 PMOS
Abstract: D0218 diode EGP 30b tSoP38xxx TSOP5700 2N7002x tSoP4xxx jfet to 92 TSOP34XXX SMD DO-213 ZENER DIODE
Text: Si6926ADQ Vishay Siliconix New Product Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.030 @ VGS = 4.5 V 4.5 0.033 @ VGS = 3.0 V 4.2 0.035 @ VGS = 2.5 V 3.9 0.043 @ VGS = 1.8 V 3.6 D1 D2 TSSOP-8 D1 1 S1 2 S1 3 G1 4 8 D2 7 S2
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Original
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PDF
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Si6926ADQ
Si6926ADQ-T1--E3
OP362XX,
TSOP5700,
TSOP52XX
DIP4/8/16,
SOT23 PMOS
D0218
diode EGP 30b
tSoP38xxx
TSOP5700
2N7002x
tSoP4xxx
jfet to 92
TSOP34XXX
SMD DO-213 ZENER DIODE
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AP3039AM
Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
Text: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)
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Original
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PDF
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2000/53/EC
2000/53/EC
2002/95/EC
2011/65/EU
SOR/2014-254
SJ/T11363-2006
GL-106
AP3039AM
12SN7
AZ1117EH-3
AP3031K
zabg6001
SMBJ11CA
ztx689
DMN33D8L
ap1901
AP3502
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2N7002x
Abstract: transistor SOT23 1d 2N7002M
Text: ALPHA SEMICONDUCTOR 2N7002 E xcellence in A n alo g Pow er P roducts N-Channel Enhancement-Mode MOS Transistor PRODUCT DESCRIPTION T he A L PH A S em iconductor’s 2N 7002 device is a vertical D M O S FE T transistor housed in a surface m ount SO T-23 for m icro
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OCR Scan
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PDF
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2N7002
2N7002M
2N7002X
OT-23
OT-23
transistor SOT23 1d
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