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    2N7002K EQUIVALENT Search Results

    2N7002K EQUIVALENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP44-1010-0.80-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1010-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FM82DUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP48-P-0707-0.50D Visit Toshiba Electronic Devices & Storage Corporation

    2N7002K EQUIVALENT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N7002K

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETs 2N7002K N-channel MOSFET SOT-23 FEATURES z High density cell design for Low RDS（on） z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability


    Original     		OT-23 2N7002K OT-23 500mA PDF

    sot-23 Marking k7k

    Abstract: k7k sot-23 2N7002K K7K 2N7002K marking code k7k transistor marking code k7k 2N7002K-7 transistor marking 61 transistor 2N7002K DS30896
    Text: 2N7002K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • • • Mechanical Data • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant Note 2


    Original     		2N7002K AEC-Q101 OT-23 J-STD-020C MIL-STD-202, DS30896 sot-23 Marking k7k k7k sot-23 2N7002K K7K 2N7002K marking code k7k transistor marking code k7k 2N7002K-7 transistor marking 61 transistor 2N7002K PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2N7002K N-channel MOSFET SOT-23 FEATURES z High density cell design for Low RDS（on） z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability


    Original     		OT-23 2N7002K OT-23 300mA -100A/Â PDF

    2N7002K

    Abstract: 2N7002k wc
    Text: SEMICONDUCTOR 2N7002K TECHNICAL DATA N Channel MOSFET ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES ESD Protected 2000V. E B L L High density cell design for low RDS ON . D Voltage controlled small signal switch. 2 A G Rugged and reliable.


    Original     		2N7002K 100ms 100mm2 2N7002K 2N7002k wc PDF

    2N7002K

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N7002K TECHNICAL DATA N Channel MOSFET ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES ・ESD Protected 2000V. E B L L ・High density cell design for low RDS ON . D ・Voltage controlled small signal switch. 2 A 3 G ・Rugged and reliable.


    Original     		2N7002K 10/-0ate 500mA 200mA 190mA, 2N7002K PDF

    marking 72K

    Abstract: n-channel mosfet SOT-23 diode RL-250 SOT23 72k MOSFET 50V 100A MOSFET SOT-23 mosfet Vds 30 Vgs 25 IGSS transistor 2N7002K 2N7002K
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2N7002K N-channel MOSFET SOT-23 FEATURES z High density cell design for Low RDS（on） z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability


    Original     		OT-23 2N7002K OT-23 500mA 300mA 300mA -100A/ marking 72K n-channel mosfet SOT-23 diode RL-250 SOT23 72k MOSFET 50V 100A MOSFET SOT-23 mosfet Vds 30 Vgs 25 IGSS transistor 2N7002K PDF

    2N7002K

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N7002K TECHNICAL DATA N Channel MOSFET ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES ESD Protected 2000V. E B L L High density cell design for low RDS ON . D Voltage controlled small signal switch. 2 A G Rugged and reliable.


    Original     		2N7002K 100ms 100mm2 2N7002K PDF

    2n7002k EQUIVALENT

    Abstract: k7k transistor DS30896
    Text: 2N7002K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • • • Mechanical Data • • Low On-Resistance Low Input Capacitance Fast Switching Speed


    Original     		2N7002K AEC-Q101 OT-23 J-STD-020C MIL-STD-202, DS30896 2n7002k EQUIVALENT k7k transistor PDF

    sot-23 Marking k7k

    Abstract: 2N7002K k7k sot-23 2N7002K-7 2N7002K K7K
    Text: 2N7002K Features Mechanical Data • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device Notes 1 and 2 ESD Protected Up To 2kV


    Original     		2N7002K AEC-Q101 OT-23 J-STD-020 MIL-STD-202, DS30896 sot-23 Marking k7k 2N7002K k7k sot-23 2N7002K-7 2N7002K K7K PDF

    2N7002KQ-7

    Abstract: k7k sot-23 sot-23 Marking k7k 2N7002K-7 2N7002K-2 2N7002K K7K
    Text: 2N7002K Features Mechanical Data • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device Notes 1 and 2 ESD Protected Up To 2kV


    Original     		2N7002K AEC-Q101 OT-23 J-STD-020 MIL-STD-202, OT-23 DS30896 2N7002KQ-7 k7k sot-23 sot-23 Marking k7k 2N7002K-7 2N7002K-2 2N7002K K7K PDF

    2N7002KQ-13

    Abstract: 2N7002KQ-7
    Text: 2N7002K Features Mechanical Data • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device Notes 1 and 2 ESD Protected Up To 2kV


    Original     		2N7002K AEC-Q101 J-STD-020 MIL-STD-202, DS30896 2N7002KQ-13 2N7002KQ-7 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary Features and Benefits V BR DSS RDS(ON) max 60V 2Ω @ VGS = 10V 3Ω @ VGS = 5V ID max TA = +25°C 380mA 310mA Description • Low On-Resistance  Low Input Capacitance  Fast Switching Speed


    Original     		2N7002K 380mA 310mA AEC-Q101 DS30896 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) max 60V 2Ω @ VGS = 10V 3Ω @ VGS = 5V ID max TA = +25°C 380mA 310mA • Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage 


    Original     		2N7002K 380mA 310mA AEC-Q101 DS30896 PDF

    MARKING C7K

    Abstract: MSOT-23 2n7002k EQUIVALENT
    Text: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) max 60V 2Ω @ VGS = 10V 3Ω @ VGS = 5V ID max TA = +25°C 380mA 310mA Description • Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage


    Original     		2N7002K 380mA 310mA AEC-Q101 DS30896 MARKING C7K MSOT-23 2n7002k EQUIVALENT PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) max 60V 2Ω @ VGS = 10V 3Ω @ VGS = 5V ID max TA = +25°C 380mA 310mA Description • Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage


    Original     		2N7002K 380mA 310mA AEC-Q101 DS30896 PDF

    MARKING C7K

    Abstract: 2N7002K-7 2n7002k EQUIVALENT
    Text: 2N7002K Green N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) max 60V 2Ω @ VGS = 10V 3Ω @ VGS = 5V ID max TA = +25°C 380mA 310mA Description • Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage


    Original     		2N7002K 380mA 310mA AEC-Q101 DS30896 MARKING C7K 2N7002K-7 2n7002k EQUIVALENT PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits RDS(ON) max ID max TA = 25°C 2Ω @ VGS = 10V 380mA 3Ω @ VGS = 5V 310mA • • • • • • • Description and Applications Mechanical Data This MOSFET has been designed to minimize the on-state resistance


    Original     		2N7002K 380mA 310mA DS30896 PDF

    2N7002K-7

    Abstract: 2N7002KQ-7 2N7002K1
    Text: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = 25°C 2Ω @ VGS = 10V 380mA 3Ω @ VGS = 5V 310mA • • • • • 60V • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green"


    Original     		2N7002K 380mA 310mA AEC-Q101 DS30896 621-2N7002K-7 2N7002K-7 2N7002K-7 2N7002KQ-7 2N7002K1 PDF

    2n7002k EQUIVALENT

    Abstract: No abstract text available
    Text: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = 25°C 2Ω @ VGS = 10V 380mA 3Ω @ VGS = 5V 310mA • • • • • 60V • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green"


    Original     		2N7002K 380mA 310mA AEC-Q101 DS30896 2n7002k EQUIVALENT PDF

    MARKING C7K

    Abstract: 2N7002KQ-13 2N7002K-7
    Text: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = 25°C 2Ω @ VGS = 10V 380mA 3Ω @ VGS = 5V 310mA • • • • • 60V • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green"


    Original     		2N7002K 380mA 310mA AEC-Q101 DS30896 MARKING C7K 2N7002KQ-13 2N7002K-7 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3VD060060NEJL 3VD060060NEJL N-CH MOSFET CHIPS WITH ESD PROTECTED STRUCTURE DESCRIPTION Ø 3VD060060JL is a N-Channel enhancement mode MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø Zener diode ESD protected up to 2KV Ø High density cell design for low RDS ON


    Original     		3VD060060NEJL 3VD060060NEJL 3VD060060JL OT-23 2N7002K. 500mA PDF

    zener wafer

    Abstract: 2N7002K Power MOSFET Wafer
    Text: 3VD060060NEJL 3VD060060NEJL STRUCTURE N-CH MOSFET CHIPS WITH ESD PROTECTED DESCRIPTION Ø 3VD060060JL is a N-Channel enhancement mode MOSFET chip fabricated in advanced silicon epitaxial planar technology. Ø Zener diode ESD protected up to 4KV HMB . Ø High density cell design for low RDS(ON).


    Original     		3VD060060NEJL 3VD060060JL OT-23 2N7002K. zener wafer 2N7002K Power MOSFET Wafer PDF

    zener wafer

    Abstract: 2N7002K Power MOSFET Wafer
    Text: 3VD050060NEJL 3VD050060NEJL STRUCTURE N-CH MOSFET CHIPS WITH ESD PROTECTED DESCRIPTION Ø 3VD050060NEJL is a N-Channel enhancement mode MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø Zener diode ESD protected up to 4000V HBM Ø


    Original     		3VD050060NEJL 3VD050060NEJL OT-23-3L 2N7002K. zener wafer 2N7002K Power MOSFET Wafer PDF

    Untitled

    Abstract: No abstract text available
    Text: 19-2335; Rev 0; 1/02 Tracking, Sinking and Sourcing, Synchronous Buck Controller for DDR Memory and Termination Supplies Features ♦ 25A Sourcing and Sinking Current ♦ Automatically Sets VTT to 1/2VDDR ♦ VTT and VTTR Within 1% of 1/2VDDR ♦ Smallest Output Capacitors


    Original     		MAX1917 MAX1917 PDF