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    2N7002K 2K Search Results

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    2N7002K 2K Price and Stock

    Vishay Intertechnologies 2N7002K-T1-GE3

    MOSFETs 60V Vds 20V Vgs SOT-23
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    Mouser Electronics 2N7002K-T1-GE3 779,451
    • 1 $0.19
    • 10 $0.135
    • 100 $0.121
    • 1000 $0.062
    • 10000 $0.045
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    Vishay Intertechnologies 2N7002K-T1-E3

    MOSFETs 60V Vds 20V Vgs SOT-23
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 2N7002K-T1-E3 650,914
    • 1 $0.19
    • 10 $0.135
    • 100 $0.121
    • 1000 $0.062
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    onsemi 2N7002ET1G

    MOSFETs NFET SOT23 60V 310mA 2.5Ohms
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 2N7002ET1G 569,967
    • 1 $0.16
    • 10 $0.093
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    PanJit Semiconductor 2N7002K_R1_00001

    MOSFETs 60V N-Channel Enhancement Mode MOSFET - ESD Protected
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    Mouser Electronics 2N7002K_R1_00001 240,893
    • 1 $0.12
    • 10 $0.081
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    onsemi 2N7002KT1G

    MOSFETs NFET SOT23 60V 380mA 2.5Ohms
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 2N7002KT1G 223,125
    • 1 $0.13
    • 10 $0.087
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    2N7002K 2K Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    sot-23 Marking k7k

    Abstract: 2N7002K k7k sot-23 2N7002K-7 2N7002K K7K
    Text: 2N7002K Features Mechanical Data • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device Notes 1 and 2 ESD Protected Up To 2kV


    Original     		2N7002K AEC-Q101 OT-23 J-STD-020 MIL-STD-202, DS30896 sot-23 Marking k7k 2N7002K k7k sot-23 2N7002K-7 2N7002K K7K PDF

    2N7002KQ-7

    Abstract: k7k sot-23 sot-23 Marking k7k 2N7002K-7 2N7002K-2 2N7002K K7K
    Text: 2N7002K Features Mechanical Data • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device Notes 1 and 2 ESD Protected Up To 2kV


    Original     		2N7002K AEC-Q101 OT-23 J-STD-020 MIL-STD-202, OT-23 DS30896 2N7002KQ-7 k7k sot-23 sot-23 Marking k7k 2N7002K-7 2N7002K-2 2N7002K K7K PDF

    2N7002KQ-13

    Abstract: 2N7002KQ-7
    Text: 2N7002K Features Mechanical Data • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device Notes 1 and 2 ESD Protected Up To 2kV


    Original     		2N7002K AEC-Q101 J-STD-020 MIL-STD-202, DS30896 2N7002KQ-13 2N7002KQ-7 PDF

    2N7002K

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETs 2N7002K N-channel MOSFET SOT-23 FEATURES z High density cell design for Low RDS（on） z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability


    Original     		OT-23 2N7002K OT-23 500mA PDF

    sot-23 Marking k7k

    Abstract: k7k sot-23 2N7002K K7K 2N7002K marking code k7k transistor marking code k7k 2N7002K-7 transistor marking 61 transistor 2N7002K DS30896
    Text: 2N7002K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • • • Mechanical Data • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant Note 2


    Original     		2N7002K AEC-Q101 OT-23 J-STD-020C MIL-STD-202, DS30896 sot-23 Marking k7k k7k sot-23 2N7002K K7K 2N7002K marking code k7k transistor marking code k7k 2N7002K-7 transistor marking 61 transistor 2N7002K PDF

    2n7002k EQUIVALENT

    Abstract: k7k transistor DS30896
    Text: 2N7002K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • • • Mechanical Data • • Low On-Resistance Low Input Capacitance Fast Switching Speed


    Original     		2N7002K AEC-Q101 OT-23 J-STD-020C MIL-STD-202, DS30896 2n7002k EQUIVALENT k7k transistor PDF

    2N7002K

    Abstract: MosFET
    Text: 2N7002K 0.3A , 60V , RDS ON 4  N-Ch Small Signal MOSFET with ESD Protection Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES         SOT-23 RDS(ON), VGS@10V, IDS@500mA=3


    Original     		2N7002K OT-23 500mA 200mA 2002/95/EC 30-Mar-2011 2N7002K MosFET PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary Features and Benefits V BR DSS RDS(ON) max 60V 2Ω @ VGS = 10V 3Ω @ VGS = 5V ID max TA = +25°C 380mA 310mA Description • Low On-Resistance  Low Input Capacitance  Fast Switching Speed


    Original     		2N7002K 380mA 310mA AEC-Q101 DS30896 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7002K 60V ESD Protected N-Channel Enhancement Mode MOSFET RDS ON , VGS@10V, IDS@500mA=2Ω RDS(ON), VGS@4.5V, IDS@200mA=3Ω SOT-23 FEATURES • • • • • • Advanced Trench Process Technology Ultra Low On Resistance : 2Ω Fast Switching Speed : 20ns


    Original     		2N7002K 500mA 200mA OT-23 2002/95/EC OT-23 MIL-STD-750, 200mA PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) max 60V 2Ω @ VGS = 10V 3Ω @ VGS = 5V ID max TA = +25°C 380mA 310mA • Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage 


    Original     		2N7002K 380mA 310mA AEC-Q101 DS30896 PDF

    MARKING C7K

    Abstract: MSOT-23 2n7002k EQUIVALENT
    Text: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) max 60V 2Ω @ VGS = 10V 3Ω @ VGS = 5V ID max TA = +25°C 380mA 310mA Description • Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage


    Original     		2N7002K 380mA 310mA AEC-Q101 DS30896 MARKING C7K MSOT-23 2n7002k EQUIVALENT PDF

    k7k transistor

    Abstract: k7k sot-23 transistor k7k sot-23 Marking k7k 2N7002KA 2N7002K-7 marking K7K marking code k7k transistor
    Text: 2N7002K Lead-free Green N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • · · · · · · · · Low On-Resistance: RDS ON SOT-23 Low Gate Threshold Voltage A Low Input Capacitance Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50


    Original     		2N7002K AEC-Q101 OT-23 DS30896 k7k transistor k7k sot-23 transistor k7k sot-23 Marking k7k 2N7002KA 2N7002K-7 marking K7K marking code k7k transistor PDF

    MOSFET N SOT-23

    Abstract: 2N7002K 60V N-Channel Enhancement Mode MOSFET - ESD Protected
    Text: 2N7002K 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition


    Original     		2N7002K 500mA 200mA 2002/95/EC OT-23 MIL-STD-750 008gram MOSFET N SOT-23 2N7002K 60V N-Channel Enhancement Mode MOSFET - ESD Protected PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) max 60V 2Ω @ VGS = 10V 3Ω @ VGS = 5V ID max TA = +25°C 380mA 310mA Description • Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage


    Original     		2N7002K 380mA 310mA AEC-Q101 DS30896 PDF

    2N7002K

    Abstract: No abstract text available
    Text: 2N7002K 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition


    Original     		2N7002K 500mA 200mA 2002/95/EC OT-23 MIL-STD-750 2N7002K PDF

    MARKING C7K

    Abstract: 2N7002K-7 2n7002k EQUIVALENT
    Text: 2N7002K Green N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) max 60V 2Ω @ VGS = 10V 3Ω @ VGS = 5V ID max TA = +25°C 380mA 310mA Description • Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage


    Original     		2N7002K 380mA 310mA AEC-Q101 DS30896 MARKING C7K 2N7002K-7 2n7002k EQUIVALENT PDF

    2N7002K R1

    Abstract: No abstract text available
    Text: 2N7002K 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-23 FEATURES Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology 0.120(3.04) 0.110(2.80) • High Density Cell Design For Ultra Low On-Resistance


    Original     		2N7002K 500mA 200mA 2011/65/EU IEC61249 OT-23 OT-23 2010-REV 2N7002K R1 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7002K 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-23 FEATURES Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology 0.120(3.04) 0.110(2.80) • High Density Cell Design For Ultra Low On-Resistance


    Original     		2N7002K OT-23 500mA 200mA 2002/95/EC IEC61249 2010-REV PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7002K 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-23 FEATURES Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω 0.006(0.15)MIN. • RDS(ON), VGS@4.5V,IDS@200mA=4Ω 0.120(3.04) 0.110(2.80) • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance


    Original     		2N7002K 500mA OT-23 200mA 2010-REV RB500V-40 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits RDS(ON) max ID max TA = 25°C 2Ω @ VGS = 10V 380mA 3Ω @ VGS = 5V 310mA • • • • • • • Description and Applications Mechanical Data This MOSFET has been designed to minimize the on-state resistance


    Original     		2N7002K 380mA 310mA DS30896 PDF

    2N7002KA

    Abstract: No abstract text available
    Text: 2N7002K-AU 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-23 FEATURES Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology 0.120(3.04) 0.110(2.80) • High Density Cell Design For Ultra Low On-Resistance


    Original     		2N7002K-AU 500mA 200mA TS16949 AECQ101 2002/95/EC IEC61249 OT-23 2010-REV 2N7002KA PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7002K 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-23 FEATURES Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology 0.120(3.04) 0.110(2.80) • High Density Cell Design For Ultra Low On-Resistance


    Original     		2N7002K 500mA 200mA 2002/95/EC IEC61249 OT-23 OT-23 2010-REV PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7002K-AU 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-23 FEATURES Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology 0.120(3.04) 0.110(2.80) • High Density Cell Design For Ultra Low On-Resistance


    Original     		2N7002K-AU OT-23 500mA 200mA TS16949 AEC-Q101 2002/95/EC 2010-REV PDF

    2N7002K-7

    Abstract: 2N7002KQ-7 2N7002K1
    Text: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = 25°C 2Ω @ VGS = 10V 380mA 3Ω @ VGS = 5V 310mA • • • • • 60V • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green"


    Original     		2N7002K 380mA 310mA AEC-Q101 DS30896 621-2N7002K-7 2N7002K-7 2N7002K-7 2N7002KQ-7 2N7002K1 PDF