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    2N7000 TRANSISTOR Search Results

    2N7000 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
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    2N7000 TRANSISTOR Price and Stock

    Diotec Semiconductor AG 2N7000

    MOSFET - TO-92 - 60V - 0.2A - N - 0.35W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 2N7000 24,586
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    • 10000 $0.0338
    		Buy Now

    onsemi 2N7000-D26Z

    N-Channel Enhancement Mode Field Effect Transistor 60V, 200mA, 5 Ω
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 2N7000-D26Z 10,000
    • 1 -
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    • 10000 $0.0906
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    onsemi 2N7000

    N-Channel Enhancement Mode Field Effect Transistor 60V, 200mA, 5 Ω
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 2N7000 9,750
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    • 1000 $0.1239
    • 10000 $0.1092
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    onsemi 2N7000-D75Z

    2N7000 Series 60V 5 Ohms N-Ch Enhancement Mode Field Effect Transistor - TO-92
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 2N7000-D75Z 6,000
    • 1 -
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    • 10000 $0.0943
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    NTE Electronics Inc 2N7000

    Small Signal Field-Effect Transistor
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 2N7000 4,300
    • 1 -
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    • 100 $0.498
    • 1000 $0.396
    • 10000 $0.346
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    Find more 2N7000 TRANSISTOR price and stock on Findchips.com

    2N7000 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BS170

    Abstract: 2N7000 2n7000 equivalent transistor BS170 BS170L X2N7000 05ATC to92 rthja
    Text: N-Channel Enhancement-Mode MOS Transistor CORPORATION 2N7000 / BS170L DESCRIPTION ORDERING INFORMATION The 2N7000 utilizes Calogic’s vertical DMOS technology. The device is well suited for switching applications where BV of 60V and low on resistance under 5 ohms are required. The


    Original     		2N7000 BS170L 2N7000 X2N7000 -55oC 150oC BS170 2n7000 equivalent transistor BS170 BS170L X2N7000 05ATC to92 rthja PDF

    2N7000

    Abstract: 10D3
    Text: 2N7000 2N7000 N-Channel Enhancement Mode Field Effect Transistor N-Kanal Feldeffekt Transistor – Anreicherungstyp N N Version 2011-02-16 Power dissipation Verlustleistung 18 9 16 S GD 2 x 2.54 Dimensions - Maße [mm] 350 mW Plastic case Kunststoffgehäuse


    Original     		2N7000 UL94V-0 2N7000 10D3 PDF

    2n7000

    Abstract: siemens fet to92 fet to92
    Text: 2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) 60V 5.0Ω 75mA Order Number / Package TO-92 2N7000 Features Advanced DMOS Technology • Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a


    Original     		2N7000 2n7000 siemens fet to92 fet to92 PDF

    D 92 M 03 DIODE

    Abstract: 2n7000 4W-25 fet 2n7000
    Text: 2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) 60V 5Ω 75mA Order Number / Package TO-92 2N7000 Features Advanced DMOS Technology • Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a


    Original     		2N7000 D 92 M 03 DIODE 2n7000 4W-25 fet 2n7000 PDF

    2N7000

    Abstract: No abstract text available
    Text: 2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) 60V 5.0Ω 75mA Order Number / Package TO-92 2N7000 Features Advanced DMOS Technology ❏ Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a


    Original     		2N7000 2N7000 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7000 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex 2N7000 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original     		2N7000 2N7000 DSFP-2N7000 A110807 PDF

    2n7000 equivalent

    Abstract: equivalent of 2n7000
    Text: 2N7000 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex 2N7000 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original     		2N7000 DSPD-TO92TapingSpec B070610 2n7000 equivalent equivalent of 2n7000 PDF

    2N7000 circuits

    Abstract: 125OC 2N7000 2N7000-G 2n7000g
    Text: 2N7000 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex 2N7000 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original     		2N7000 2N7000 DSFP-2N7000 A042507 2N7000 circuits 125OC 2N7000-G 2n7000g PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC 2N7000 MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC 2N7000 has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents


    Original     		2N7000 2N7000 400mA QW-R201-064 PDF

    07153

    Abstract: 03aa02
    Text: 2N7000 N-channel enhancement mode field-effect transistor Rev. 03 — 19 May 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: 2N7000 in SOT54 TO-92 variant .


    Original     		2N7000 2N7000 03ab40 03ab30 771-2N7000AMO 07153 03aa02 PDF

    2N7000 TO-92

    Abstract: No abstract text available
    Text: 2N7000 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex 2N7000 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original     		2N7000 2N7000 DSFP-2N7000 A021307 2N7000 TO-92 PDF

    TO-92 Package Dimensions diode inc

    Abstract: 2N7000 125OC 2N7000-G transistor 2n7000 2n7000g
    Text: 2N7000 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex 2N7000 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original     		2N7000 2N7000 DSFP-2N7000 B091008 TO-92 Package Dimensions diode inc 125OC 2N7000-G transistor 2n7000 2n7000g PDF

    2n7000 motorola

    Abstract: To92 transistor motorola fet 2n7000 2N7000 MOTOROLA pin out
    Text: MOTOROLA Order this document by 2N7000/D SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor 2N7000 N–Channel — Enhancement Motorola Preferred Device 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ


    Original     		2N7000/D 2N7000 226AA) 2N7000/D 2n7000 motorola To92 transistor motorola fet 2n7000 2N7000 MOTOROLA pin out PDF

    2N7000 MOTOROLA

    Abstract: 2N7000 Fet To92 transistor motorola 2N7000 MOTOROLA pin out 2N7000 fet 2n7000 2N7000 "Motorola"
    Text: MOTOROLA Order this document by 2N7000/D SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor 2N7000 N–Channel — Enhancement Motorola Preferred Device 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ


    Original     		2N7000/D 2N7000 226AA) 2N7000 MOTOROLA 2N7000 Fet To92 transistor motorola 2N7000 MOTOROLA pin out 2N7000 fet 2n7000 2N7000 "Motorola" PDF

    2N7000 MOSFET

    Abstract: Mosfet 2n7000
    Text: 2N7000 N-channel enhancement mode field-effect transistor Rev. 03 — 19 May 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: 2N7000 in SOT54 TO-92 variant .


    Original     		2N7000 2N7000 03ab40 2N7000 MOSFET Mosfet 2n7000 PDF

    2n7000 darlington

    Abstract: 2N7000 ADI1318RI TO226AA
    Text: Order this data shaat by 2N7000/D MOTOROLA • SEMICONDUCTOR TECHNICAL DATA 2N7000 Advance Information Small-Signal Transistor Field Effect N-Channel Enhancement-Mode Silicon Gate TMOS J . are designed for high voltage, high speed applications such as switching regulators, converters, solenoid and relay drivers.


    Original     		2N7000/D 2N7000 O-226AA) 2n7000 darlington 2N7000 ADI1318RI TO226AA PDF

    2n7000 equivalent

    Abstract: VQ1000J 2n7000 2N7002 MARKING 2n7002 siliconix EQUIVALENT FOR bs170 equivalent of BS170 BS170 mosfet bs170 VQ1000J/P
    Text: 2N7000/7002, VQ1000J/P, BS170 N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) 2N7000 5 @ VGS = 10 V 0.8 to 3 0.2 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5 0.225


    Original     		2N7000/7002, VQ1000J/P, BS170 2N7000 2N7002 VQ1000P VQ1000J Capaci02, 2n7000 equivalent VQ1000J 2n7000 2N7002 MARKING 2n7002 siliconix EQUIVALENT FOR bs170 equivalent of BS170 BS170 mosfet bs170 VQ1000J/P PDF

    To92 transistor motorola

    Abstract: 2N7000 fet 2n7000
    Text: MOTOROLA Order this document by 2N7000/D SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor 2N7000 N–Channel — Enhancement Motorola Preferred Device 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ


    Original     		2N7000/D 2N7000 226AA) To92 transistor motorola 2N7000 fet 2n7000 PDF

    2n7000

    Abstract: BS170L X2N7000 TRANSISTOR2N7000
    Text: N-Channel Enhancement-Mode MOS Transistor calocflc CORPORATION 2N7000/BS170L DESCRIPTION ORDERING INFORMATION The 2N7000 utilizes Calogic’s vertical DMOS technology. The device is well suited for switching applications where Bv of 60V and low on resistance under 5 ohms are required. The


    OCR Scan     		2N7000/BS170L 2N7000 BS170L X2N7000 O-226AA) 1A44322 TRANSISTOR2N7000 PDF

    Untitled

    Abstract: No abstract text available
    Text: ^ Supertex inc . 2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information Order Number / Package BVusg/ ^DS O N b v dgs (max) (min) TO-92 60V 5Q 75mA 2N7000 ' d (ON) Features Advanced DMOS Technology □ These enhancement-mode (normally-off) power transistors


    OCR Scan     		2N7000 PDF

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. 2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information ^DS O N BVdgs (max) 60V 5.0ft JI BVdss / Order Number / Package TO-92 2N7000 75mA Features Advanced DMOS Technology □ Free from secondary breakdown □ Low power drive requirement


    OCR Scan     		2N7000 PDF

    Untitled

    Abstract: No abstract text available
    Text: N-ChannelEnhancement-Mode MOS Transistor _ CQIOOIC CORPORATION 2N7000/BS170L DESCRIPTION ORDERING INFORMATION The 2N7000 utilizes Calogic’s vertical DMOS technology. The device is well suited for switching applications where Bv of 60V and low on resistance under 5 ohms are required. The


    OCR Scan     		2N7000/BS170L 2N7000 BS170L X2N7000 2N7000 BS170 PDF

    Untitled

    Abstract: No abstract text available
    Text: N-Channel Enhancement-Mode MOS Transistor caioqic CORPORATION 2N7000/BS170L DESCRIPTION ORDERING INFORMATION The 2N7000 utilizes Calogic’s vertical DMOS technology. The device is well suited for switching applications where Bv of 60V and low on resistance under 5 ohms are required. The


    OCR Scan     		2N7000/BS170L 2N7000 2N7000 BS170L X2N7000 O-226AA) BS170 300fiS PDF

    m2n7000

    Abstract: 1000J sot23 BS170
    Text: Tem ic 2N7000/7002, VQIOOOJ/P, BS170_ slUconix N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V B R D S S Min (V) * * D S (o n ) Max (Q) I d (A) Vr.s(ih) (V) 2N7000 5 @ V gs = 10V 0.8 to 3 0.2 2N7002 7.5 @ V gs = 10 V 1 to 2.5


    OCR Scan     		2N7000/7002, BS170_ 2N7000 2N7002 VQ1000J VQ1000P BS170 P-37993-- VQ1000J/P, m2n7000 1000J sot23 BS170 PDF