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    2N7000 COMPLEMENT Search Results

    2N7000 COMPLEMENT Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CD4041UBPWR Texas Instruments CMOS quad true/complement buffer 14-TSSOP -55 to 125 Visit Texas Instruments Buy
    CD4041UBM Texas Instruments CMOS quad true/complement buffer 14-SOIC -55 to 125 Visit Texas Instruments Buy
    CD4041UBM96 Texas Instruments CMOS quad true/complement buffer 14-SOIC -55 to 125 Visit Texas Instruments Buy
    CD4041UBPW Texas Instruments CMOS quad true/complement buffer 14-TSSOP -55 to 125 Visit Texas Instruments Buy
    CD4041UBF3A Texas Instruments CMOS quad true/complement buffer 14-CDIP -55 to 125 Visit Texas Instruments Buy
    CD4041UBE Texas Instruments CMOS quad true/complement buffer 14-PDIP -55 to 125 Visit Texas Instruments Buy

    2N7000 COMPLEMENT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2n7000

    Abstract: siemens fet to92 fet to92
    Text: 2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) 60V 5.0Ω 75mA Order Number / Package TO-92 2N7000 Features Advanced DMOS Technology • Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a


    Original     		PDF 2N7000 2n7000 siemens fet to92 fet to92

    D 92 M 03 DIODE

    Abstract: 2n7000 4W-25 fet 2n7000
    Text: 2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) 60V 5Ω 75mA Order Number / Package TO-92 2N7000 Features Advanced DMOS Technology • Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a


    Original     		PDF 2N7000 D 92 M 03 DIODE 2n7000 4W-25 fet 2n7000

    2N7000

    Abstract: No abstract text available
    Text: 2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) 60V 5.0Ω 75mA Order Number / Package TO-92 2N7000 Features Advanced DMOS Technology ❏ Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a


    Original     		PDF 2N7000 2N7000

    Untitled

    Abstract: No abstract text available
    Text: 2N7000 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex 2N7000 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original     		PDF 2N7000 2N7000 DSFP-2N7000 A110807

    2n7000 equivalent

    Abstract: equivalent of 2n7000
    Text: 2N7000 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex 2N7000 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original     		PDF 2N7000 DSPD-TO92TapingSpec B070610 2n7000 equivalent equivalent of 2n7000

    2N7000 circuits

    Abstract: 125OC 2N7000 2N7000-G 2n7000g
    Text: 2N7000 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex 2N7000 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original     		PDF 2N7000 2N7000 DSFP-2N7000 A042507 2N7000 circuits 125OC 2N7000-G 2n7000g

    2N7000 TO-92

    Abstract: No abstract text available
    Text: 2N7000 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex 2N7000 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original     		PDF 2N7000 2N7000 DSFP-2N7000 A021307 2N7000 TO-92

    TO-92 Package Dimensions diode inc

    Abstract: 2N7000 125OC 2N7000-G transistor 2n7000 2n7000g
    Text: 2N7000 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex 2N7000 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original     		PDF 2N7000 2N7000 DSFP-2N7000 B091008 TO-92 Package Dimensions diode inc 125OC 2N7000-G transistor 2n7000 2n7000g

    MOSFET P-channel SOT-23

    Abstract: NTD80N02 NTD18N06 NTMS3P03R2 MLD1N06CL NTHD5904N
    Text: Power MOSFET Numeric Data Sheet Listing Chapter 1: Power MOSFET Data Sheets Device Function Page 2N7000 . . . . . . . . . . . . . . . . . . . . . Small Signal MOSFET 200 mAmps, 60 Volts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26


    Original     		PDF 2N7000 2N7002L MOSFET60 OT-23 BS107, BS107A BS108 BS170 NUD3124 NUD3160 MOSFET P-channel SOT-23 NTD80N02 NTD18N06 NTMS3P03R2 MLD1N06CL NTHD5904N

    Untitled

    Abstract: No abstract text available
    Text: 2N7000 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain


    Original     		PDF 2N7000 2N7000 DSFP-2N7000 B091008

    uart 8250

    Abstract: LZ64 8250 uart RS232-specification zener diode 1N4742 8250 uart rxd 8250 uart datasheet DS1982 DS1986 DS1991
    Text: APPLICATION NOTE 74 Application Note 74 Reading and Writing iButtons via Serial Interfaces I. INTRODUCTION An iButtonTM is a chip housed in a stainless steel enclosure. The electrical interface is reduced to the absolute minimum, i.e., a single data line plus a ground reference. The energy needed for operation is either “stolen”


    Original     		PDF 1N5228 1N5234 1N5235 1N5242 2N7000 BSS110 uart 8250 LZ64 8250 uart RS232-specification zener diode 1N4742 8250 uart rxd 8250 uart datasheet DS1982 DS1986 DS1991

    uart 8250

    Abstract: 8250 uart 8250 uart datasheet programmable interval timer 8253 real time microprocessor 8253 applications 100 ohm POT .25W interfacing 8051 with eprom and ram zener diode 1N5232 8253 Programmable Interrupt Controller microprocessors interface 8253 "Real Time Clock"
    Text: APPLICATION NOTE 74 Application Note 74 Reading and Writing iButtons via Serial Interfaces I. INTRODUCTION An iButtonTM is a chip housed in a stainless steel enclosure. The electrical interface is reduced to the absolute minimum, i.e., a single data line plus a ground reference. The energy needed for operation is either “stolen”


    Original     		PDF 1N5228 1N5234 1N5235 1N5242 2N7000 BSS110 uart 8250 8250 uart 8250 uart datasheet programmable interval timer 8253 real time microprocessor 8253 applications 100 ohm POT .25W interfacing 8051 with eprom and ram zener diode 1N5232 8253 Programmable Interrupt Controller microprocessors interface 8253 "Real Time Clock"

    FET pair n-channel p-channel

    Abstract: VN0300L equivalent FET P-Channel Switch 2N7000 MOSFET mosfet discrete totem pole CIRCUIT logic level complementary MOSFET Siliconix "fet" 2n7000 complement mosfet discrete totem pole drive CIRCUIT VP2020L
    Text: AN804 P-Channel MOSFETs, the Best Choice for High-Side Switching Historically, p-channel FETs were not considered as useful as their n-channel counterparts. The higher resistivity of p-type silicon, resulting from its lower carrier mobility, put it at a disadvantage compared to n-type silicon.


    Original     		PDF AN804 10-Mar-97 VP0300L O-226AA VN0300L TP0610L 2N7000 FET pair n-channel p-channel VN0300L equivalent FET P-Channel Switch 2N7000 MOSFET mosfet discrete totem pole CIRCUIT logic level complementary MOSFET Siliconix "fet" 2n7000 complement mosfet discrete totem pole drive CIRCUIT VP2020L

    dallas nvram 120

    Abstract: uart 8250 AN8250
    Text: Application Note 74 Reading and Writing iButtons via Serial Interfaces www.dalsemi.com I. INTRODUCTION An iButtonTM is a chip housed in a stainless steel enclosure. The electrical interface is reduced to the absolute minimum, i.e., a single data line plus a ground reference. The energy needed for operation is


    Original     		PDF communicatioRA-82-004 1N5818 LT1109CN8-12 2N7000 BSS110 RS232 1N5242 dallas nvram 120 uart 8250 AN8250

    UART 8250

    Abstract: 8250 uart datasheet 8250 uart LZ64 Dallas iButton DS1990A microprocessors interface 8253 "Real Time Clock" 8051 microcontroller Assembly language program 8253 programme able interface dallas nvram interfacing 8051 with eprom and ram
    Text: Application Note 74 Reading and Writing iButtons via Serial Interfaces www.dalsemi.com I. INTRODUCTION An iButtonTM is a chip housed in a stainless steel enclosure. The electrical interface is reduced to the absolute minimum, i.e., a single data line plus a ground reference. The energy needed for operation is


    Original     		PDF RS232 1N5242 ERA-82-004 1N5818 ERA-82-004 LT1109CN8-12 2N7000 UART 8250 8250 uart datasheet 8250 uart LZ64 Dallas iButton DS1990A microprocessors interface 8253 "Real Time Clock" 8051 microcontroller Assembly language program 8253 programme able interface dallas nvram interfacing 8051 with eprom and ram

    70611

    Abstract: FET pair n-channel p-channel mosfet discrete totem pole drive CIRCUIT 2n7000+complement 2n7000 complement logic level complementary MOSFET mosfet discrete totem pole CIRCUIT Logic Level p-Channel Power MOSFET AN804 Si9942DY
    Text: AN804 Vishay Siliconix P-Channel MOSFETs, the Best Choice for High-Side Switching Historically, p-channel FETs were not considered as useful as their n-channel counterparts. The higher resistivity of p-type silicon, resulting from its lower carrier mobility, put it at a


    Original     		PDF AN804 retur5600 VP0300L O-226AA VN0300L TP0610L 2N7000 70611 FET pair n-channel p-channel mosfet discrete totem pole drive CIRCUIT 2n7000+complement 2n7000 complement logic level complementary MOSFET mosfet discrete totem pole CIRCUIT Logic Level p-Channel Power MOSFET AN804 Si9942DY

    2n7000 complement

    Abstract: VP0300L mosfet discrete totem pole drive CIRCUIT 2n7000+complement 2n7000 equivalent AN804 Si9939DY Si9942DY Si9958DY TP0610
    Text: AN804 Siliconix PĆChannel MOSFETs, the Best Choice for HighĆSide Switching Ed Oxner Circuit Applications Historically, pĆchannel FETs were not considered as useful as their nĆchannel counterparts. The higher resistivity of pĆtype silicon, resulting from its lower carrier mobility, put


    Original     		PDF AN804 VP0300L O226AA VN0300L TP0610L 2N7000 VP2020L 2n7000 complement VP0300L mosfet discrete totem pole drive CIRCUIT 2n7000+complement 2n7000 equivalent AN804 Si9939DY Si9942DY Si9958DY TP0610

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. 2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information ^DS O N BVdgs (max) 60V 5.0ft JI BVdss / Order Number / Package TO-92 2N7000 75mA Features Advanced DMOS Technology □ Free from secondary breakdown □ Low power drive requirement


    OCR Scan     		PDF 2N7000

    Untitled

    Abstract: No abstract text available
    Text: ^ Supertex inc . 2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information Order Number / Package BVusg/ ^DS O N b v dgs (max) (min) TO-92 60V 5Q 75mA 2N7000 ' d (ON) Features Advanced DMOS Technology □ These enhancement-mode (normally-off) power transistors


    OCR Scan     		PDF 2N7000

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. 2N7000 N-Channel Enhancement-Mode Vertical DMOS FET BVDgs RdS ON (max) If Ordering Information 60V 5n 75mA b v dss / Order Number / Package TO-92 2N7000 Features I i Free from secondary breakdown !J Low power drive requirement r i Ease of paralleling


    OCR Scan     		PDF 2N7000

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. 2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information b v dss/ b v dgs RdS ON (max) Id(ON) (min) 60V 5.0Q. 75mA Order Number / Package TO-92 2N7000 Features Advanced DMOS Technology □ Free from secondary breakdown □ Low power drive requirement


    OCR Scan     		PDF 2N7000

    Untitled

    Abstract: No abstract text available
    Text: N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information BVDSS/ BVdgs RdS ON (max) I d(ON) (min) 60V 5£2 75mA Order Number / Package TO-92 2N7000 Features Advanced DMOS Technology □ Free from secondary breakdown □ Low power drive requirement


    OCR Scan     		PDF 2N7000

    uart 8250

    Abstract: LZ64 uart 8051 115200 2n7000 complement 8250 UART master touch
    Text: APPLICATION NOTE 74 Application Note 74 DALLAS SEMICONDUCTOR Reading and Writing Touch Memories via Serial Interfaces I. INTRODUCTION For read operations all devices are satisfied with a 5kQ pull-up resistor to supply energy and to terminate the 1-W ire bus. Touch Memory devices based on non-vol­


    OCR Scan     		PDF RS232 1N5242 ERA-82-004 1N5818 LT1109CN8-- 2N7000 uart 8250 LZ64 uart 8051 115200 2n7000 complement 8250 UART master touch

    uart 8250

    Abstract: LZ64 programmable interval timer 8253 BPS-8 equivalent RS232-specification 8250 UART 8253 timer master touch nvram 1k
    Text: n A . | • A p p lic a tio n q D A L L A O SEMICONDUCTOR N o te 7 4 Reading and Writing Touch Memories v « Seria| |nterfaces I. INTRODUCTION For read operations all devices are satisfied with a 5kil pull-up resistor to supply energy and to terminate the


    OCR Scan     		PDF RS232 1N5242 ERA-82-004 1N5818 LT1109CN8-12 2N7000 uart 8250 LZ64 programmable interval timer 8253 BPS-8 equivalent RS232-specification 8250 UART 8253 timer master touch nvram 1k