DD 127 D transistor
Abstract: 2N6849
Text: 2N6849 Qualified Levels: JAN, JANTX, JANTXV and JANS P-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/564 DESCRIPTION This 2N6849 switching transistor is military qualified up to the JANS level for high-reliability applications. This device is also available in a low profile U surface mount package.
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2N6849
MIL-PRF-19500/564
2N6849
O-205AF
T4-LDS-0009,
DD 127 D transistor
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MOSFET
Abstract: 2N6849
Text: <£iuni- loneLuikot ZPioauott., Una. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 378-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA 2N6849 MECHANICAL DATA Dimensions in mm (inches) P-CHANNEL POWER MOSFETs VDSS 'D(cont) / / -'- f \ I <« T «
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2N6849
6Mog26>
-100V
00A/u
MOSFET
2N6849
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Untitled
Abstract: No abstract text available
Text: P-CHANNEL POWER MOSFET IRFF9130 / 2N6849 • MOSFET Transistor In A Hermetic Metal TO-205AF Package • Single Pulse Avalanche Energy Rated • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated
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IRFF9130
2N6849
O-205AF
-100V
500mJ
O-205AF)
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2N6849 JANS
Abstract: 2n6849 jantxv 2N6849 p-channel MOSFET 100V
Text: 2N6849 Dimensions in mm inches . P-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. P-Channel MOSFET.
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2N6849
O205AF)
11-Oct-02
2N6849 JANS
2n6849 jantxv
2N6849
p-channel MOSFET 100V
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DIODE 65A
Abstract: 2N6849
Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com P-CHANNEL MOSFET Qualified per MIL-PRF-19500/564 DEVICES LEVELS 2N6849 JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
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MIL-PRF-19500/564
2N6849
-10Vdc,
-40Vdc
-100A/
T4-LDS-0009
DIODE 65A
2N6849
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2n6849
Abstract: TO-205AF Package 2n6849 mosfet irff9130
Text: P-CHANNEL POWER MOSFET IRFF9130 / 2N6849 • MOSFET Transistor In A Hermetic Metal TO-205AF Package • Single Pulse Avalanche Energy Rated • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated
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IRFF9130
2N6849
O-205AF
-100V
-100V
500mJ
-55semelab-tt
O-205AF)
2n6849
TO-205AF Package
2n6849 mosfet
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2n6849 mosfet
Abstract: 2N6849 2N6849 JANTX 80v P-Channel MOSFET 2n6849u ADC 0803 datasheet
Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com P-CHANNEL MOSFET Qualified per MIL-PRF-19500/564 DEVICES LEVELS 2N6849 2N6849U JAN JANTX JANTXV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
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MIL-PRF-19500/564
2N6849
2N6849U
T4-LDS-0009
2n6849 mosfet
2N6849
2N6849 JANTX
80v P-Channel MOSFET
2n6849u
ADC 0803 datasheet
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2N6849
Abstract: L1725
Text: 2N6849 MECHANICAL DATA Dimensions in mm inches P–CHANNEL POWER MOSFETs 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 2.54 (0.100) 2 1 VDSS
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2N6849
O-205AF)
2N6849
L1725
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Untitled
Abstract: No abstract text available
Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com P-CHANNEL MOSFET Qualified per MIL-PRF-19500/564 DEVICES LEVELS 2N6849 2N6849U JAN JANTX JANTXV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
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MIL-PRF-19500/564
2N6849
2N6849U
T4-LDS-0009
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Untitled
Abstract: No abstract text available
Text: 2N6849+JANTXV Transistors P-Channel Enhancement MOSFET Military/High-RelY V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)6.5# I(DM) Max. (A) Pulsed I(D)4.1# @Temp (øC)100 IDM Max (@25øC Amb)25# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)25# Minimum Operating Temp (øC)-55õ
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2N6849
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2N6849
Abstract: No abstract text available
Text: 2N6849 Siliconix PĆChannel EnhancementĆMode Transistor Product Summary V BR DSS (V) rDS(on) (W) ID (A) -100 0.30 -6.5 Parametric limits in accordance with MILĆSĆ19500/564 where applicable. S TOĆ205AF (TOĆ39) S G 1 2 3 G D D Top View PĆChannel MOSFET
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2N6849
MILS19500/564
O205AF
P37010Rev.
2N6849
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2N6849
Abstract: W41A
Text: 2N6849 N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) (W) ID (A) –100 0.30 –6.5 Parametric limits in accordance with MIL-S-19500/564 where applicable. S TO-205AF (TO-39) S G 1 2 3 G D Top View D P-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)
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2N6849
MIL-S-19500/564
O-205AF
P-37010--Rev.
06-Jun-94
2N6849
W41A
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Untitled
Abstract: No abstract text available
Text: 2N6849+JANTX Transistors P-Channel Enhancement MOSFET Military/High-RelY V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)6.5# I(DM) Max. (A) Pulsed I(D)4.1# @Temp (øC)100 IDM Max (@25øC Amb)25# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)25# Minimum Operating Temp (øC)-55õ
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2N6849
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Untitled
Abstract: No abstract text available
Text: 2N6849+JANS Transistors P-Channel Enhancement MOSFET Military/High-RelY V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)6.5# I(DM) Max. (A) Pulsed I(D)4.1# @Temp (øC)100 IDM Max (@25øC Amb)25# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)25# Minimum Operating Temp (øC)-55õ
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2N6849
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2N6849
Abstract: No abstract text available
Text: SEME 2N6849 LAB MECHANICAL DATA Dimensions in mm inches P–CHANNEL POWER MOSFETs 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) VDSS ID(cont) RDS(on) 5 .0 8 (0 .2 0 0 ) ty p . 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 4 .1 9 (0 .1 6 5 ) 4 .9 5 (0 .1 9 5 ) ! 2 .5 4 (0 .1 0 0 )
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2N6849
300ms,
2N6849
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transistor 564H
Abstract: 2n6849 jantxv JANHCA2N6849 2N6849 2N6849U 2N6849 JANTX 2N6849 JANS 2N6851 2N6849 datasheet IRFF9232
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 2 September 2009. MIL-PRF-19500/564H 2 June 2009 SUPERSEDING MIL-PRF-19500/564G 13 June 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON,
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MIL-PRF-19500/564H
MIL-PRF-19500/564G
2N6849,
2N6849U,
2N6851
2N6851U,
MIL-PRF-19500.
transistor 564H
2n6849 jantxv
JANHCA2N6849
2N6849
2N6849U
2N6849 JANTX
2N6849 JANS
2N6849 datasheet
IRFF9232
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Untitled
Abstract: No abstract text available
Text: 2N6849U Qualified Levels: JAN, JANTX, JANTXV and JANS P-CHANNEL MOSFET Compliant Qualified per MIL-PRF-19500/564 DESCRIPTION This 2N6849U switching transistor is military qualified up to the JANS level for high-reliability applications. This device is also available in a thru hole TO-205AF package. Microsemi also
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2N6849U
MIL-PRF-19500/564
2N6849U
O-205AF
2N6849
MIL-PRF-19500/564.
T4-LDS-0009-1,
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DD 127 D TRANSISTOR
Abstract: transistor DD 127 D 2N6849 2N6849 JANTX u18 transistor
Text: 2N6849U Qualified Levels: JAN, JANTX, JANTXV and JANS P-CHANNEL MOSFET Compliant Qualified per MIL-PRF-19500/564 DESCRIPTION This 2N6849U switching transistor is military qualified up to the JANS level for high-reliability applications. This device is also available in a thru hole TO-205AF package. Microsemi also
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Original
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2N6849U
MIL-PRF-19500/564
2N6849U
O-205AF
2N6849
MIL-PRF-19500/564.
T4-LDS-0009-1,
DD 127 D TRANSISTOR
transistor DD 127 D
2N6849 JANTX
u18 transistor
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p12p10
Abstract: IRF9530* p-channel power MOSFET 2N6898 Power MOSFETs Field-Effect Transistors IRFP9140/P9141 irf9640 mosfet IRF9530 P-channel power p-channel irfp9240
Text: - POWER MOSFETs 5 P-CHANNEL POWER MOSFETs PAGE 2N6804 Avalanche Energy Rated P-Channel Power M OSFET. 5-3 2N6849 Avalanche Energy Rated P-Channel Power MOSFET. 5-8 2N6851
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OCR Scan
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2N6804
2N6849
2N6851
2N6895
2N6896
2N6897
2N6898
IRF9130,
IRF9131,
IRF9132,
p12p10
IRF9530* p-channel power MOSFET
Power MOSFETs
Field-Effect Transistors
IRFP9140/P9141
irf9640 mosfet
IRF9530 P-channel power
p-channel
irfp9240
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2N6849
Abstract: 2N6849 JANTX b 43306 2n6800 2n6849 mosfet 2n6849 jantxv
Text: Rugged Power MOSFETs File N u m b e r 2N6849 2219 Avalanche-Energy-Rated P-Channel Power MOSFETs -6.5A, and -100V ib s on = 0.30Q TERMINAL DIAGRAM D Features: • Single pulse avalanche energy rated m SOA is pow er-dissipation lim ited m N anosecond sw itching speeds
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OCR Scan
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2N6849
-100V
92CS-43262
2N6849
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6849 JANTX
b 43306
2n6849 mosfet
2n6849 jantxv
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2N6849
Abstract: 2n6849 mosfet
Text: 2N6849 23 HARRIS Avalanche-Energy-Rated P-Channel Power MOSFETs A u g u s t 19 91 Features Package T0 -20 5A F BOTTOM VIEW 4 ftr •m -bCCA .5 A , -lU U tll V • rDS on = 0 .3 0 n • Single Pulse Avalanche Energy Rated SOURCE • S O A is P ow er-D issip atio n Lim ited
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OCR Scan
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2N6849
92CS-4329B
92CS-43320
92CS-43300
92CS-43307
2N6849
2n6849 mosfet
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Untitled
Abstract: No abstract text available
Text: •I 4302271 ^ h a 0DS4MTS r r 1Û5 ■ HAS 2N6849 i s Avalanche-Energy-Rated P-Channel Power MOSFETs August 1991 Features Package T 0 -2 0 5 A F BOTTOM VIEW • - 6 .5 A , - 1 OOV * rDS on = 0.30H • S in g le P u ls e A v a la n c h e E n e rg y R a te d
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OCR Scan
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2N6849
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JANTX2N6845
Abstract: No abstract text available
Text: Government and Space International HEXFET Power MOSFETs lI O R B e c t if ie r Hermetic Package P-Channel Part Number BVpss V RDS(on) (Ohms) •d @ Tc = 25-C lD@ Tc = 100"C (A) (A) RthJC Max. (K/W) Pd@ TC= 25°C (W) IRFF9024 -60 0.28 -6.4 -4.1 6.25 20 IRFF9110
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OCR Scan
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IRFF9024
IRFF9110
IRFF9120
2N6845
JANTX2N6845
JANTXV2N6845
IRFF9130
2N6849
JANTX2N6849
JANTXV2N6849
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IRF024
Abstract: 2N6845 IRF035 33MIL
Text: International Í^ R ÍF W 4 Íf¡ÖT HEXFFT n C A rC I ^ r ie u m ie r un Power MOSFETs Hermetic Package TO-39 N-Channel Part Number Vos Drain Source Voltage Volts IRFF9010 IRFF9020 IRFF9030 -50 IRFF9113 IRFF9111 IRFF9123 IRFF9121 IRFF9133 IRFF9131 -80
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OCR Scan
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IRFF9010
IRFF9020
IRFF9030
IRFF9113
IRFF9111
IRFF9123
IRFF9121
IRFF9133
IRFF9131
IRFF9112
IRF024
2N6845
IRF035
33MIL
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