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    2N6796 Price and Stock

    Microchip Technology Inc 2N6796

    MOSFET N-CH 100V 8A TO39
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    Microchip Technology Inc 2N6796U

    MOSFET N-CH 100V 8A 18ULCC
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    Microchip Technology Inc JAN2N6796

    MOSFET N-CH 100V 8A TO39
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    Microchip Technology Inc JAN2N6796U

    MOSFET N-CH 100V 8A 18ULCC
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    Microchip Technology Inc JANTX2N6796

    MOSFET N-CH 100V 8A TO205AF
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    2N6796 Datasheets (31)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N6796 Defense Supply Center Columbus N-Channel FET Original PDF
    2N6796 Fairchild Semiconductor TRANS MOSFET N-CH 100V 8A 3TO-205AF Original PDF
    2N6796 International Rectifier HEXFET TRANSISTORS Original PDF
    2N6796 Intersil 8A, 100V, 0.180 ?, N-Channel Power MOSFET Original PDF
    2N6796 Microsemi FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V TO-205AF TO-39 Original PDF
    2N6796 Omnirel 100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power Transistor Original PDF
    2N6796 Semelab N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. Original PDF
    2N6796 Semelab TMOS FET Enhancement N-Channel Original PDF
    2N6796 General Electric N-channel enhancement-mode power field-effect transistor. 8.0 A, 100V. Scan PDF
    2N6796 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    2N6796 International Rectifier TO-39 Package N-Channel HEXFET Scan PDF
    2N6796 International Rectifier TO-39 N-Channel HEXFET Power MOSFETs Scan PDF
    2N6796 Motorola European Master Selection Guide 1986 Scan PDF
    2N6796 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6796 Unknown FET Data Book Scan PDF
    2N6796 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6796 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2N6796 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6796 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6796 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    2N6796 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6796U

    Abstract: 2N6796
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 DEVICES LEVELS 2N6796 2N6796U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)


    Original     		PDF MIL-PRF-19500/557 2N6796 2N6796U 10Vdc, 30Vdc T4-LDS-0047 2N6796U 2N6796

    2N6796

    Abstract: TB334
    Text: 2N6796 Data Sheet December 2001 8A, 100V, 0.180 Ohm, N-Channel Power MOSFET Features • 8A, 100V The 2N6796 is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor


    Original     		PDF 2N6796 2N6796 O-205AF TB334

    Untitled

    Abstract: No abstract text available
    Text: 2N6796 MECHANICAL DATA Dimensions in mm inches TMOS FET ENHANCEMENT N - CHANNEL 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) FEATURES 0.41 (0.016) 0.53 (0.021) dia. • V(BR)DSS = 100V 5.08 (0.200)


    Original     		PDF 2N6796 O-205AF)

    JANTX2N6796

    Abstract: 2N6798 transistor c 557 2N6800 2N6802 JANTX2N6798 JANTX2N6800 JANTX2N6802 JANTXV2N6796 JANTXV2N6798
    Text: 2N6796, 2N6796 2N6796 2N6798, JANTX2N6798 JANTXV2N6798 2N6800, JANTX2N6800, JANTXV2N6800 2N6802, JANTX2N6802, JANTXV2N6802 JANTX, JANTXV POWER MOSFET IN TO-205 AF PACKAGE, QUALIFIED TO MIL-PRF-19500/557 100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power Transistor


    Original     		PDF 2N6796, JANTX2N6796 JANTXV2N6796 2N6798, JANTX2N6798 JANTXV2N6798 2N6800, JANTX2N6800, JANTXV2N6800 2N6802, 2N6798 transistor c 557 2N6800 2N6802 JANTX2N6800 JANTX2N6802 JANTXV2N6796 JANTXV2N6798

    2N6796

    Abstract: No abstract text available
    Text: 2N6796 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET.


    Original     		PDF 2N6796 O205AF) 11-Oct-02 2N6796

    Untitled

    Abstract: No abstract text available
    Text: 2N6796U, 2N6798U, 2N6800U, 2N6802U Qualified Levels: JAN, JANTX, JANTXV and JANS* N-CHANNEL MOSFET Compliant Qualified per MIL-PRF-19500/557 DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level for highreliability applications. The 2N6798U part number is also qualified to the JANS level. These


    Original     		PDF 2N6796U, 2N6798U, 2N6800U, 2N6802U MIL-PRF-19500/557 2N6798U O-205AF T4-LDS-0047-1,

    2N6880

    Abstract: 2N6798 JANTXV
    Text: 2N6796, 2N6798, 2N6800, 2N6802 Qualified Levels: JAN, JANTX, JANTXV and JANS* N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/557 DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level for highreliability applications. The 2N6798 part number is also qualified to the JANS level. These


    Original     		PDF 2N6796, 2N6798, 2N6800, 2N6802 MIL-PRF-19500/557 2N6798 T4-LDS-0047, 2N6880 2N6798 JANTXV

    2N6796

    Abstract: No abstract text available
    Text: 2N6796 MECHANICAL DATA Dimensions in mm inches TMOS FET TRANSISTOR N – CHANNEL 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 .7 0 (0 .5 0 0 ) m in . 0 .8 9 m a x . (0 .0 3 5 ) 7 .7 5 (0 .3 0 5 )


    Original     		PDF 2N6796 2N6796

    2N6796

    Abstract: TB334
    Text: 2N6796 Data Sheet November 1998 8A, 100V, 0.180 Ohm, N-Channel Power MOSFET • 8A, 100V • rDS ON = 0.180Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device


    Original     		PDF 2N6796 O-205AF 2N6796 TB334

    NS3001

    Abstract: No abstract text available
    Text: 2N6796 MECHANICAL DATA Dimensions in mm inches TMOS FET TRANSISTOR N – CHANNEL 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 .7 0 (0 .5 0 0 ) m in . 0 .8 9 m a x . (0 .0 3 5 ) 0.41 (0.016)


    Original     		PDF 2N6796 NS3001

    2N6796

    Abstract: TB334
    Text: 2N6796 Data Sheet November 1998 8A, 100V, 0.180 Ohm, N-Channel Power MOSFET Features The 2N6796 is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor


    Original     		PDF 2N6796 2N6796 O-205AF TB334

    DD 127 D TRANSISTOR

    Abstract: transistor DD 127 D 2N6880 2N6798 2N6796 2n6796 jantx 2N6796 JANTXV 2N6802 2n6800 2N6798 JANTXV
    Text: 2N6796, 2N6798, 2N6800, 2N6802 Qualified Levels: JAN, JANTX, JANTXV and JANS* N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/557 DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level for highreliability applications. The 2N6798 part number is also qualified to the JANS level. These


    Original     		PDF 2N6796, 2N6798, 2N6800, 2N6802 MIL-PRF-19500/557 2N6798 2N67n T4-LDS-0047, DD 127 D TRANSISTOR transistor DD 127 D 2N6880 2N6796 2n6796 jantx 2N6796 JANTXV 2N6802 2n6800 2N6798 JANTXV

    DD 127 D transistor

    Abstract: 2n6798u 2N6796U
    Text: 2N6796U, 2N6798U, 2N6800U, 2N6802U Qualified Levels: JAN, JANTX, JANTXV and JANS* N-CHANNEL MOSFET Compliant Qualified per MIL-PRF-19500/557 DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level for highreliability applications. The 2N6798U part number is also qualified to the JANS level. These


    Original     		PDF 2N6796U, 2N6798U, 2N6800U, 2N6802U MIL-PRF-19500/557 2N6798U O-205AF 2N6796, 2N67mensions T4-LDS-0047-1, DD 127 D transistor 2N6796U

    Untitled

    Abstract: No abstract text available
    Text: 2N6796+JANTXV Transistors N-Channel Enhancement MOSFET Military/High-RelY V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)8.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)25 Minimum Operating Temp (øC)


    Original     		PDF 2N6796

    2n6796

    Abstract: MOSFET
    Text: TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINQRELO, NEW JERSEY 07081 U.SA 2N6796 8A, 100V, 0.180 Ohm, N-Channel Power MOSFET Features • 8A, 100V The 2N6796 is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications


    Original     		PDF 2N6796 2N6796 310mA 00A/HS MOSFET

    2N6796

    Abstract: No abstract text available
    Text: MOTORCLA SC XSTRS/R F 12E D | fc.3b?554 QGflbbbS S | 2N6796 M A X IM U M RATINGS Symbol Value U nit Drain-Source Voltage Vd s s 100 Vdc Drain-Gate Voltage Rq s = 1.0 m fi Vd g r 100 Vdc Vg s ±20 Vdc Id 8.0 32 Rating Gate-Source Voltage CASE 79-05, STYLE 6


    OCR Scan     		PDF 2N6796 O-20SAF) 2N6796

    Untitled

    Abstract: No abstract text available
    Text: 4302271 0053701 m b • HAS 2N6796 2 HARRIS N-Channel Enhancement-Mode Power Field-Effect Transistor August 1991 Package Features TO-205AF BOTTOM VIEW • 8.0A, 100V • rDS(on = 0 .1 8 « • SOA is Power-Dissipation Limited SOURCE • Nanosecond Switching Speeds


    OCR Scan     		PDF 2N6796 O-205AF 2N6796 LH0063

    1RF9130

    Abstract: jantx2n1800 JAN2N1793 2N6849 2N1915 2n6845 563 j 400v JAN2N3095 T0-209AC IRFF9120
    Text: Government/ Space Products bitematinnai ¡¡¡F te S ? H E X F E T , Mil-Qualified N-Channel Types JEDEC 2N6782 2N6784 2N6786 2N6788 2N6790 2N6792 2N6794 2N6796 2N6798 2N6800 2N6802 Part Numbers JANTX JANTX2N6782 JANTX2N6784 JANTX2N6786 JANTX2N6788 JANTX2N6790


    OCR Scan     		PDF JANTX2N6782 JANTX2N6784 JANTX2N6786 JANTX2N6788 JANTX2N6790 JANTX2N6792 JANTX2N6794 JANTX2N6796 JANTX2N6798 JANTX2N6800 1RF9130 jantx2n1800 JAN2N1793 2N6849 2N1915 2n6845 563 j 400v JAN2N3095 T0-209AC IRFF9120

    2N6796

    Abstract: 2N6795
    Text: POWER MOSFET TRANSISTORS 100 Volt, 0.18 Ohm N-Channel FEATURES • • • • • ITX 2N6795 JTX, JTXV 2N6796 DESCRIPTION The U nitrode power M O SFET design utilizes the m ost advan ce d technology available. This efficien t design a ch ieves a very low Rosiom and a high transconductance.


    OCR Scan     		PDF 2N6795 2N6796 2N6796

    2N6796

    Abstract: No abstract text available
    Text: 0 3 H A R R 2N6796 I S N-Channel Enhancem ent-M ode Power Field-Effect Transistor A u g u st 1991 Package Features T 0 -2 0 5 A F BOTTOM VIEW • 8.0A, 100V • rDS on = 0 .1 8 0 • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics


    OCR Scan     		PDF 2N6796 2N6796 LM0063

    2N6796 HARRIS

    Abstract: 2n6796 jantx qpl-19500 2N6756 2N6796 diode332 2N6770 JANTX 2N6897
    Text: Standard Power MOSFETs 2N6796 F ile N u m b e r 1594 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 8.0A, 100V ros on = 0.18 fi Features: • SOA is po w e r-d issip ation lim ite d


    OCR Scan     		PDF 2N6796 2N6796 O-205AF O-2I35AF 2N6800 T0-205AF 2N6796 HARRIS 2n6796 jantx qpl-19500 2N6756 diode332 2N6770 JANTX 2N6897

    1N7001

    Abstract: 2N6155 4900 SIEMENS 1N7000 BUZ54 2N6759 2n6800 2N6823 BUZ211 IXTP4N90
    Text: - 248 - f M € tt € ft * V 2N6755 2N6756 2N6757 2N6758 2N6759 2N6Ï6Û 2N6761 2N6762 2K6763 2N6764 2N6765 2N6766 2N6767 2N6768 2N6769 2N6770 2N6782 2N6784 2Ü6736 2N6788 2N679Û 2N6792 2N6794 2N6796 2K6798 2N6800 2N6802 2N6804 2N6806 2N6845 IR IR IR IR


    OCR Scan     		PDF 2N6755 T0-204AA 2N6756 O-204AA 2N6757 2N6758 2N6659 O-205AF 1N7001 2N6155 4900 SIEMENS 1N7000 BUZ54 2N6759 2n6800 2N6823 BUZ211 IXTP4N90

    2N7003

    Abstract: 2N7009 2N7011 2N7073 G50-12C1 2N6755 2N6756 2N6757 2N6758 2N6759
    Text: - 248 M - € 2N6755 2N6756 2N6757 2N6758 2N6759 2N6Ï6Û 2N6761 2N6762 2K6763 2N6764 2N6765 2N6766 2N6767 2N6768 2N6769 2N6770 2N6782 2N6784 2Ü6736 2N6788 2N679Û 2N6792 2N6794 2N6796 2K6798 2N6800 2N6802 2N6804 2N6806 2N6845 f- +• */!/ * tt € f f t * £ ÍS T a = 2 5 '0


    OCR Scan     		PDF 2N6755 T0-204AA 2N6756 O-204AA 2N6757 2N6758 O-254AA 2N7003 2N7009 2N7011 2N7073 G50-12C1 2N6759

    diode by 26E

    Abstract: diagram pulsa 2N6796 DIODE ON u1E
    Text: 3875081 G E SOLID STATE Dll dÎF| 3fl7SDfil DD1Û41A □ I T ’ S ?-£>? sian a a ra row er M O SFET s 2N6796 File Num ber 1594 Power MOS Field-Effect Transistors p N-Channel Enhancement-Mode Power Field-Effect Transistors


    OCR Scan     		PDF GDlfl41fl 2N6796 2N6796 diode by 26E diagram pulsa DIODE ON u1E