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    2N6678 Price and Stock

    Microchip Technology Inc 2N6678

    TRANS NPN 400V 15A TO204AD
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    TRANS NPN TO3
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    Microchip Technology Inc 2N6678T1

    NPN TRANSISTOR
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    Microchip Technology Inc JAN2N6678

    TRANS NPN 400V 15A TO204AA
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    Microchip Technology Inc JANS2N6678

    TRANS NPN 400V 15A TO3
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    2N6678 Datasheets (37)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N6678 Microsemi NPN Transistor Original PDF
    2N6678 Semelab High Voltage NPN Power Transistor - Pol=NPN / Pkg=TO3 / Vceo=400 / Ic=15 / Hfe=8min / fT(Hz)=15M / Pwr(W)=175 Original PDF
    2N6678 Allen-Bradley Electronic Component Data Book 1985 Scan PDF
    2N6678 Boca Semiconductor NPN SILICON POWER TRANSISTORS - Pol=NPN / Pkg=TO3 / Vceo=400 / Ic=15 / Hfe=8min / fT(Hz)=15M / Pwr(W)=175 Scan PDF
    2N6678 Diode Transistor Transistor Short Form Data Scan PDF
    2N6678 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
    2N6678 General Electric Power Transistor Data Book 1985 Scan PDF
    2N6678 General Electric 15 A SwitchMax power transistor. High voltage N-P-N type. - Pol=NPN / Pkg=TO3 / Vceo=400 / Ic=15 / Hfe=8min / fT(Hz)=15M / Pwr(W)=175 Scan PDF
    2N6678 General Electric High Voltage Bipolar Power Transistors Scan PDF
    2N6678 General Semiconductor Low Frequency Silicon Power NPN Transistor Scan PDF
    2N6678 Mospec NPN Silicon Power Transistor Scan PDF
    2N6678 Mospec POWER TRANSISTORS(15A,175W) - Pol=NPN / Pkg=TO3 / Vceo=400 / Ic=15 / Hfe=8min / fT(Hz)=15M / Pwr(W)=175 Scan PDF
    2N6678 Motorola European Master Selection Guide 1986 Scan PDF
    2N6678 Motorola NPN silicon power transistor. 15 A, 400 V, 175 W. - Pol=NPN / Pkg=TO3 / Vceo=400 / Ic=15 / Hfe=8min / fT(Hz)=15M / Pwr(W)=175 Scan PDF
    2N6678 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6678 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6678 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6678 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6678 Unknown Transistor Replacements Scan PDF
    2N6678 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    2N6678 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6678

    Abstract: 2N6676 2N6691 2N6693
    Text: TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/538 Devices 2N6676 Qualified Level 2N6678 2N6691 JAN JANTX JANTXV 2N6693 MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Collector-Base Voltage Emitter-Base Voltage


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    PDF MIL-PRF-19500/538 2N6676 2N6678 2N6691 2N6693 2N6676 2N6691 2N6678 2N6693

    Untitled

    Abstract: No abstract text available
    Text: NPN High Power Silicon Transistors 2N6676 & 2N6678 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/538 • TO-3 TO-204AA Package Maximum Ratings Symbol 2N6676 2N6678 Units Collector - Emitter Voltage Ratings VCEO 300 400 Vdc Collector - Base Voltage


    Original
    PDF 2N6676 2N6678 MIL-PRF-19500/538 O-204AA)

    Untitled

    Abstract: No abstract text available
    Text: 2N6678+JANTXV Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)400 V(BR)CBO (V)650 I(C) Max. (A)15 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u¶ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF 2N6678 Freq15M time600n

    Untitled

    Abstract: No abstract text available
    Text: 2N6678+JANTX Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)400 V(BR)CBO (V)650 I(C) Max. (A)15 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u¶ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original
    PDF 2N6678 Freq15M time600n

    power transistor 200V, 30A

    Abstract: 2N6678 Rl135 2n6677
    Text: 2N6676 2N6677 2N6678 NPN SILICON POWER TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6676 SERIES types are NPN Silicon Power Transistors designed for high voltage switching applications. MARKING: FULL PART NUMBER


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    PDF 2N6676 2N6677 2N6678 200mA 2N6676) power transistor 200V, 30A Rl135

    Untitled

    Abstract: No abstract text available
    Text: 2N6678 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N6678 Availability Online Store


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    PDF 2N6678 2N6678 O-204AA STV3208 LM3909N

    Untitled

    Abstract: No abstract text available
    Text: 2N6678+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)400 V(BR)CBO (V)650 I(C) Max. (A)15 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u¶ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original
    PDF 2N6678 Freq15M time600n

    Untitled

    Abstract: No abstract text available
    Text: TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/ 538 Qualified Level Devices 2N6676 2N6678 2N6691 JAN JANTX JANTXV 2N6693 MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Collector-Base Voltage Emitter-Base Voltage


    Original
    PDF MIL-PRF-19500/ 2N6676 2N6678 2N6691 2N6693 2N6676 2N6691

    npn C 1740

    Abstract: No abstract text available
    Text: SILICON MULTI-EPITAXIAL NPN TRANSISTOR 2N6678M3A • High Voltage, Fast Switching. • Hermetic TO-254AA Isolated Metal Package. • Ideally suited for PWM Regulators, Power Supplies and Converter Circuits • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated


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    PDF 2N6678M3A O-254AA O-254AA npn C 1740

    2N6678

    Abstract: 2N6677 2N6676
    Text: SavantIC Semiconductor Product Specification 2N6676 2N6677 2N6678 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High voltage capability ·Fast switching speeds ·Low saturation voltage APPLICATIONS Designed for high voltage switching applications such as :


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    PDF 2N6676 2N6677 2N6678 2N6676 2N6677 2N6678

    2N6676

    Abstract: 2N6677 2N6678
    Text: Æ&m o s p e c NPN SILICON POWER TRANSISTORS NPN 2N6676 2N6677 2N6678 The 2N6676,2N6677and 2N6678 transistor are designed for high voltage switching applications such as: FEATURES ‘ Off-Line Power Supplies ‘ Converter Circuits *Pulse Width Modulated Regulators


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    PDF 2N6676 2N6677and 2N6678 2N6677 2N6678 2N6676

    BC140-16

    Abstract: T053 BC109C NPN BC108A BC107A bc108 IC hr 2N6589 2N6590 2N6609 2N6653
    Text: MAE D • 0133187 0 0 0 D M4 5 SEM ELABE G31 I S ML B SEMELAB LTD BI-POLAR TRANSISTO RS CECC AND HIGH REL & HIGH ENERGY Rel Code 2N6589 2N6590 2N6594 2N6609 2N6653 2N6654 2N6655 2N6671 2N6672 2N6673 2N6674 2N6675 2N6676 2N6677 2N6678 2N6686 2N6687 2N6688


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    PDF ai331fl7 0000MH5 2N6589 2N6590 2N6594 2N6609 2N6653 10min 2N6654 BC140-16 T053 BC109C NPN BC108A BC107A bc108 IC hr

    Untitled

    Abstract: No abstract text available
    Text: ¡lU CROSEMl CORP/POüJER 02 I ^ F |t ,l l S ^ S O 0 0 0 0 4 5 0 b "J~ D T '3 3 - / . 5 2N6676 2N6677 2N6678 - .T ^ H N O C O G Y .;_V V ; Po we r Tec h nö ió gÿ Co m poh e nis HIGH VOLTAGE NPN TRANSISTORS 15 AMPERES : 400 VOLTS 30 <01 1 » 3 Ï3901 139961 MAX


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    PDF 2N6676 2N6677 2N6678 2N6676, 2N6677 2N6678 0D00431

    2C3303

    Abstract: ca3725 6676 transistor transistor C200 2N6676 2CS9
    Text: File Number 2N6676, 2N6677, 2N6678 HARRIS SEMICOND SECTOR 1165.1 M 3 0 S 2 7 1 D D 4 0 b 20 EfiM • HAS SbE D T ’3 3 ~ / 9 15-A Sw ItehM aX Power Transistors TERMINAL DESIGNATIONS High-Voltage N-P-N Types for Off-Line Power Supplies and Other High-Voltage Switching Applications


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    PDF 2N6676, 2N6677, 2N6678 2N6676 2N6677 2N6678 2N6676. 2C3303 ca3725 6676 transistor transistor C200 2CS9

    2N6678

    Abstract: No abstract text available
    Text: SGS-THOMSON RülD@œi[LI BTIs! IS!lBCi 2N6678 SILICON NPN TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE APPLICATIONS . SWITCHING REGULATORS . INVERTERS . SOLENOID AND REU\Y DRIERS • MOTOR CONTROLS . DEFLECTION CIRCUITS 2 DESCRIPTIONS ■ High voltage, high speed switching power


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    PDF 2N6678 2N6678

    NPN power transistor 15A amperes

    Abstract: 135AI L50C1 EM2030 D64VS3 2N66 2N667 2N6676 2N6677 2N6678
    Text: HIGH VOLTAQE/HIQH SPEED 2N6676.77.78 NPN POWER TRANSISTORS 300-400 VOLTS 15 AMP, 175 WATTS G E EQUIVALENT D64VS3,4, 5 The 2N6676, 2N6677 and 2N6678 series of NPN power transistors is designed for use in power switching applica­ tions requiring high-voltage capability, fast switching speeds


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    PDF D64VS3 2N6676, 2N6677 2N6678 2N667 in5626j NPN power transistor 15A amperes 135AI L50C1 EM2030 2N66 2N6676

    CA3725

    Abstract: MJH6678 2N6678 transistor MJH6678 2N6350 2N6677 motorola 3-251 2N6678 motorola MJH6677 2N6648
    Text: MOTOROLA SC 6367254 íXSTRS/R "Tb F> M O T OR O L A SC CXSTRS/R F DE Jt.Btz.7SSM O O ñ D S l b H 96D 6 0 5 1 6 D T-33-/3 2N6648 See Page 3-209 MOTOROLA SEMICONDUCTOR TECHNICAL DATA N P N S ilic o n P o w e r T ran sisto rs 2N6676 2N6677 2N6678 The 2N6676, 2N6677, 2N6678, MJH6676, MJH6677, and MJH6678 transistors are


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    PDF 2N6676, 2N6677, 2N6678, MJH6676, MJH6677, MJH6678 2N6676 MJH6676 2N6677 MJH6677 CA3725 2N6678 transistor MJH6678 2N6350 motorola 3-251 2N6678 motorola MJH6677 2N6648

    2N6676

    Abstract: 40321 40361 2N6677 2N6678 2N6738 2N6739 2N6740 40406 2N6752
    Text: 0258354 ADVANCED SEM ICONDUCTOR 1 fl2 TRANSISTORS Po @ Tc=25°C DEVICE TYPE NO. 2N6676 2N6677 2N6678 2N6738 2N6739 2N6740 2N6751 2N6752 2N6753 2N6754 2N6834 2N6835 2N6836 40080 40081 40084 40231 40232 40232 40234 40235 40236 40237 40238 40239 40240 40242 40243


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    PDF 2N6676 2N6677 2N6678 2N6738 T0220 2N6739 2N6740 2N6751 2N6752 T0220 40321 40361 40406

    aX 010

    Abstract: 2N6693 JS 027
    Text: ,lk 2N6676 2N6677 2N6678 2N6691 2N6692 2N6693 General 3 ^ Semiconductor ^ « Industries, Inc. HIGH POWER NPN twitch P/iff TRANSISTORS NPN 300, 350, 400V 15 A M P S W IT C H IN G t, — 300ns T Y P IC A L This rugged series o f NPN tra n s ito rs is designed fo r high speed s w itch in g


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    PDF 2N6676 2N6677 2N6678 2N6691 2N6692 2N6693 2N6676-78 2N6691-93 -61/lso aX 010 2N6693 JS 027

    2N6678 motorola

    Abstract: Motorola 3-252 ca3725 Motorola Transistor 3-252 JH transistor 6676 transistor Motorola 3-252 to-3
    Text: "Tb MOTOROLA SC iXSTRS/R F> 6367254 M OT O R O L A SC CXSTRS/R F DE Jt.3t.72SM OOÛOSlt. 2 96D 60 516 D T-33-13 2IM6648 M O TO RO LA See Page S E M IC O N D U C T O R TECH N ICAL DATA 3-209 N P N Silico n Pow er T ransistors 2N6676 2N6677 2N6678 The 2N6676, 2N6677, 2N6678, MJH6676, MJH6677, and MJH6678 transistors are


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    PDF T-33-13 2IM6648 2N6676 2N6677 2N6678 MJH6676 MJH6677 MJH6678 2N6676, 2N6677, 2N6678 motorola Motorola 3-252 ca3725 Motorola Transistor 3-252 JH transistor 6676 transistor Motorola 3-252 to-3

    Untitled

    Abstract: No abstract text available
    Text: m 2N6678 \ \ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N6678 Power Transistor is Designed for General Purpose Switching and Amplifier Applications. PACKAGE STYLE T O - 3 INCHES 875 MAX. A MAXIMUM RATINGS B 135 MAX. .2 5 0- 043 DIA. C MILLIMETERS 22.23 MAX.


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    PDF 2N6678 2N6678

    Untitled

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-3 PACKAGE NPN TO-3 * Tc = 25°C ’ Typical 6 DEVICE TYPE 2N6032 2N6033 2N6274 2N6275 2N6276 2N6277 2N6322 2N6323 2N6326 2N6327 2N6338 2N6340 2N6341 2N6354 2N6510 2N6511 2N6512 2N6677 2N6678 2N6686 2N6687


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    PDF 2N6032 2N6033 2N6274 2N6275 2N6276 2N6277 2N6322 2N6323 2N6326 2N6327

    2N6678

    Abstract: transformerless inverter 2N6676 2N6677 DO820
    Text: Series 2N6676, 2N6677, 2N6678 High Voltage NPN Transistors 15 Amperes • 400 Volts FEA TURES • High Voltage Rating— 400 Volts • Glass Passivation • Superior Resistance to Thermal Fatigue • Industrial and Military Applications APPLICATIONS • Switching Regulators


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    PDF 2N6676, 2N6677 2N6678 2N6677, 2N6678 transformerless inverter 2N6676 DO820

    LM875

    Abstract: TRANSISTOR L 043 A 2N6678
    Text: 2N6678 SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N6678 Power Transistor is Designed for General Purpose Switching and Amplifier Applications. PACKAGE STYLE TO- 3 INCHES A MAXIMUM RATINGS 15 A Ib 5.0 A < B le 400 V O m 875 MAX. 135 MAX. .2 5 0- 043 DIA.


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    PDF 2N6678 2N6678 LM875 TRANSISTOR L 043 A