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    2N6426 Price and Stock

    onsemi 2N6426

    TRANS NPN DARL 40V 0.5A TO92
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    onsemi 2N6426G

    TRANS NPN DARL 40V 0.5A TO92
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    onsemi 2N6426RLRA

    TRANS NPN DARL 40V 0.5A TO92
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    Rochester Electronics 2N6426RLRA 198,994 1
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    Rochester Electronics LLC 2N6426RLRA

    TRANS NPN DARL 40V 0.5A TO92
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    onsemi 2N6426_D26Z

    TRANS NPN DARL 40V 1.2A TO92-3
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    2N6426 Datasheets (41)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N6426 Central Semiconductor Leaded Small Signal Transistor Darlington Original PDF
    2N6426 Central Semiconductor Original PDF
    2N6426 Fairchild Semiconductor NPN Darlington Transistor Original PDF
    2N6426 Fairchild Semiconductor NPN Darlington Transistor Original PDF
    2N6426 Motorola Bipolar Transistor, NPN Silicon Annular Darlington Transistor Original PDF
    2N6426 On Semiconductor Darlington Transistors NPN Original PDF
    2N6426 On Semiconductor Darlington Transistors NPN Silicon Original PDF
    2N6426 ROHM TRANS DARLINGTON NPN 40 MINV 0.5A 3TO-92 Original PDF
    2N6426 Siemens Cross Reference Guide 1998 Original PDF
    2N6426 Sinyork Mini size of Discrete semiconductor elements Original PDF
    2N6426 Central Semiconductor SMALL SIGNAL DARLINGTON TRANSISTORS (EPOXY) Scan PDF
    2N6426 Fairchild Semiconductor NPN Darlington Transistor Scan PDF
    2N6426 Motorola European Master Selection Guide 1986 Scan PDF
    2N6426 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6426 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6426 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N6426 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6426 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N6426 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6426 Unknown Shortform Transistor PDF Datasheet Short Form PDF

    2N6426 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6427

    Abstract: 2N6426
    Text: ON Semiconductort 2N6426* 2N6427 Darlington Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 40 Vdc Emitter–Base Voltage VEBO 12 Vdc


    Original     		PDF 2N6426* 2N6427 r14525 2N6426/D 2N6427 2N6426

    2N6426G

    Abstract: 2N6427 2N6426 2N6426RLRA 2N6427RLRA 2N6427RLRAG 2n64
    Text: 2N6426*, 2N6427 Preferred Device Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available* • Device Marking: Device Type, e.g., 2N6426, Date Code http://onsemi.com COLLECTOR 3 BASE 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage


    Original     		PDF 2N6426* 2N6427 2N6426, 2N6426/D 2N6426G 2N6427 2N6426 2N6426RLRA 2N6427RLRA 2N6427RLRAG 2n64

    Untitled

    Abstract: No abstract text available
    Text: 2N6426 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF 2N6426 MPSA14

    BC237

    Abstract: 2n6426 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistors 2N6426* 2N6427 NPN Silicon *Motorola Preferred Device COLLECTOR 3 BASE 2 EMITTER 1 1 2 MAXIMUM RATINGS Symbol Value Unit Collector – Emitter Voltage Rating VCEO 40 Vdc Collector – Base Voltage


    Original     		PDF 2N6426* 2N6427 226AA) Juncti218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237 2n6426 equivalent

    PN2222N

    Abstract: 2N6426 CBVK741B019 F63TNR MPSA14 transistor k 0247
    Text: 2N6426 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF 2N6426 MPSA14 PN2222N 2N6426 CBVK741B019 F63TNR transistor k 0247

    2N6426

    Abstract: MPSA14
    Text: 2N6426 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF 2N6426 MPSA14 2N6426

    2N6426

    Abstract: 2N6427 2N6426G 2N6426RLRAG 2N6427G 2N6427RLRAG
    Text: 2N6426, 2N6427 2N6426 is a Preferred Device Darlington Transistors NPN Silicon Features • These are Pb−Free Devices* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 40 Vdc Collector − Base Voltage


    Original     		PDF 2N6426, 2N6427 2N6426 2N6426/D 2N6427 2N6426G 2N6426RLRAG 2N6427G 2N6427RLRAG

    2N6427

    Abstract: No abstract text available
    Text: ON Semiconductort 2N6426* 2N6427 Darlington Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 40 Vdc Emitter–Base Voltage VEBO 12 Vdc


    Original     		PDF 2N6426* 2N6427 226AA) 2N6427

    2N6426

    Abstract: No abstract text available
    Text: 2N6426*, 2N6427 Preferred Device Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available* • Device Marking: Device Type, e.g., 2N6426, Date Code http://onsemi.com COLLECTOR 3 BASE 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage


    Original     		PDF 2N6426* 2N6427 2N6426, 2N6426 2N6426G 2N6426RLRA 2N6427 2N6427RLRA 2N6427RLRAG BRD8011/D.

    2n6426

    Abstract: No abstract text available
    Text: 2N6426, 2N6427 2N6426 is a Preferred Device Darlington Transistors NPN Silicon Features • These are Pb−Free Devices* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 40 Vdc Collector − Base Voltage


    Original     		PDF 2N6426, 2N6427 2N6426 2N6426/D

    2N6426

    Abstract: 2N6427
    Text: 2N6426* 2N6427 Darlington Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 40 Vdc Emitter–Base Voltage VEBO 12 Vdc Collector Current — Continuous


    Original     		PDF 2N6426* 2N6427 226AA) r14525 2N6426/D 2N6426 2N6427

    TRANSISTOR c 5578 B

    Abstract: 2N6427 2N6426 AN-41 AN-569 IC 2030 TRANSISTOR 5578 2902 transistor
    Text: 2N6426 2N6427 NPN SILICON ANNULAR+ DAR LINGTON TRANSISTORS . . . designed for use as high-gain amplifiers control . circuits; drivers Collector-Emitter BVCEO for displays, Breakdown = 40 Vdc Min ● DC Current ● Low Noise Figure — Gain specified ●


    Original     		PDF 2N6426 2N6427 AN-41 AN-569. TRANSISTOR c 5578 B 2N6427 2N6426 AN-569 IC 2030 TRANSISTOR 5578 2902 transistor

    2N6426

    Abstract: 2N6427 2N6427 MOTOROLA
    Text: MOTOROLA Order this document by 2N6426/D SEMICONDUCTOR TECHNICAL DATA Darlington Transistors 2N6426* 2N6427 NPN Silicon *Motorola Preferred Device COLLECTOR 3 BASE 2 EMITTER 1 1 2 MAXIMUM RATINGS Symbol Value Unit Collector – Emitter Voltage Rating VCEO


    Original     		PDF 2N6426/D 2N6426* 2N6427 2N6426/D* 2N6426 2N6427 2N6427 MOTOROLA

    MPSA13

    Abstract: MPSA14 SILICON TRANSISTOR CORP 2N6426 2N6427 CMPT6427 CMPTA13 CMPTA14 CP307 CXTA14
    Text: Central TM Semiconductor Corp. PROCESS CP307 Small Signal Transistor NPN - Silicon Darlington Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 27 x 27 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 5.3 x 3.8 MILS Emitter Bonding Pad Area


    Original     		PDF CP307 2N6426 2N6427 CMPT6427 CMPTA13 CMPTA14 CXTA14 CZTA14 MPSA13 MPSA14 MPSA13 MPSA14 SILICON TRANSISTOR CORP 2N6426 2N6427 CMPT6427 CMPTA13 CMPTA14 CP307 CXTA14

    2N5963

    Abstract: 2N5812 2N5813 2N5816 2N5817 2N5818 2N5819 2N5822 2N5823 2N5830
    Text: Small Signal Transistors TO-92 Case Continued TO-92 TYPE NO. DESCRIPTION LEAD VCBO VCEO CODE (V) (V) *VCES VEBO ICBO @ VCB (nA) (V) *ICES (V) *ICEV hFE *hFE (1kHZ) TO-92-18R @ VCE @ IC VCE (SAT) @ IC Cob (V) (mA) (V) (mA) fT NF toff (pF) (MHz) (dB) *Crb *TYP


    Original     		PDF O-92-18R 2N5812 2N5813 2N5816 2N5817 MPS3706 MPS3707 MPS3708 2N5963 2N5812 2N5813 2N5816 2N5817 2N5818 2N5819 2N5822 2N5823 2N5830

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR • 2N6426 . TO-92 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum RatinQS TA = 25°C unless otherwise noted


    OCR Scan     		PDF 2N6426 MPSA14

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N6426 NPN Darlington Transistor T his device is designed for applications requiring extrem ely high current gain at currents to 1.0 A. Sourced from Process 05. See M PSA14 for characteristics. AbSOlUtG Maximum RâtinÇjS Symbol T A = 2 5°C unless o th e rw ise noted


    OCR Scan     		PDF 2N6426 PSA14

    2N6426

    Abstract: 2N6427
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistors 2N6426* 2 N6427 NPN Silicon 'Motorola Preferred Device COLLECTOR 3 EMITTER 1 MAXIMUM RATINGS Rating C ollecto r- Emitter Voltage C ollector-B ase Voltage E m itter-B ase Voltage Symbol Value Unit


    OCR Scan     		PDF 2N6426* N6427 2N6426 2N6427 2N6427

    2N6426

    Abstract: MPSA14
    Text: SEMICONDUCTOR 2N6426 NPN Darlington Transistor This device is designed for applications requiring extrem ely high current gain at currents to 1.0 A. Sourced from Process 05. See M PSA14 for characteristics. Absolute Màximum RStinQS TA = 2 5 ° C unless o th e rw ise noted


    OCR Scan     		PDF 2N6426 MPSA14 2N6426

    2N6427

    Abstract: 2n6426
    Text: 2N6426* 2N6427 M A X IM U M R A T IN G S Rating 2 Sym b o l Value Unit Collector-Emitter Voltage v CEO 40 Vdc Collector-Base Voltage V cBO 40 V dc Emitter-Base Voltage Vebo 12 V dc Collector Current — C o n tinu ous 'c 500 m A dc Total Device Dissip ation <a- T a = 25’C


    OCR Scan     		PDF 2N6426* 2N6427 O-226AA) 2N6426, 2N6427 2n6426

    2n6427

    Abstract: 2N6426
    Text: 2N6426* 2N6427 M A X IM U M RATINGS Rating Symbol Value U n it v CEO 40 Vdc C ollector-Base V o ltage v CBO 40 Vdc Em itter-Base V o ltage v EBO 12 Vdc C o lle ctor-E m itter V o ltage CASE 29-04, STYLE 1 TO-92 TO-226AA C ollector C u rrent — C o ntinuous


    OCR Scan     		PDF 2N6426* 2N6427 O-226AA) 2N6426 2n6427

    2N6427

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 2N6426/D SEMICONDUCTOR TECHNICAL DATA Darlington Transistors 2 N6 4 2 6 * 2N 64 27 NPN Silicon COLLECTOR 3 EMITTER 1 MAXIMUM RATINGS Rating Unit VCEO 40 Vdc C o lle c to r-B a s e Voltage VCBO 40 Vdc E m itte r-B a s e Voltage


    OCR Scan     		PDF 2N6426/D 2N6427

    2N5832

    Abstract: 2n6008
    Text: ALLEGRO MICROSYSTEMS 8514019 INC SPRA G U E. =13 » • 0SD433Ô G 0 G 3 S Ô C1 Ô ■ S E M IC O N D S / I C S 93D 03589 ALGR D T 'ü - 1 - PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘2N’ and ‘TP’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C


    OCR Scan     		PDF 0SD433Ô TP5810 TP5812 TP5814 TP5816 TP5818 TP5820 TP5822 TP5824 TP5825 2N5832 2n6008

    tpq2907

    Abstract: No abstract text available
    Text: ALLEGRO MICROSYSTEMS INC 8 5 1 4 0 1 9 S P R A GU E. T3 D • 05G433Ô GGD3ÔD7 3 ■ ALGR S E M I C O N D S / ICS 93 D 0 3 8 0 7 3 SE R IE S TPQ QUAD TRANSISTOR ARRAYS SERIES TPQ QUAD TRANSISTOR ARRAYS O P R A G U E SERIES TPQ quad transistor arrays ^ are general-purpose silicon tran sisto r arrays


    OCR Scan     		PDF 05G433Ã 14-pin TPQ7051 TPQ6700 TPQ6600A TPQ6600 TPQ6502 2N3904 2N3906 tpq2907