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Microchip Technology Inc 2N6420 TRANS PNP 175V 1A TO66
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DigiKey	2N6420	Bulk			100	1 - 10 - 100 $26.4501 1000 $26.4501 10000 $26.4501	Buy Now
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Microchip Technology Inc	2N6420			36 Weeks		1 $28.49 10 $28.49 100 $28.49 1000 $28.49 10000 $28.49	Buy Now

Onlinecomponents.com	2N6420					1 - 10 - 100 $25.26 1000 $25.26 10000 $25.26	Buy Now
NAC	2N6420	Tray			12	1 $29.07 10 $29.07 100 $26.78 1000 $24.82 10000 $24.82	Buy Now
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Master Electronics	2N6420					1 - 10 - 100 $25.26 1000 $25.26 10000 $25.26	Buy Now
Microchip Technology Inc 2N6421 TRANS PNP 250V 2A TO66
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DigiKey	2N6421	Bulk			100	1 - 10 - 100 $26.4501 1000 $26.4501 10000 $26.4501	Buy Now
Avnet Americas	2N6421	Bulk		36 Weeks	100	1 - 10 - 100 $27.77778 1000 $25.33584 10000 $25.33584	Buy Now
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Newark	2N6421	Bulk			100	1 - 10 - 100 $26.45 1000 $25.43 10000 $25.43	Buy Now
Microchip Technology Inc	2N6421			36 Weeks		1 $28.49 10 $28.49 100 $28.49 1000 $28.49 10000 $28.49	Buy Now

Onlinecomponents.com	2N6421					1 - 10 - 100 $25.26 1000 $25.26 10000 $25.26	Buy Now
NAC	2N6421	Tray			12	1 $29.07 10 $29.07 100 $26.78 1000 $24.82 10000 $24.82	Buy Now
Master Electronics	2N6421					1 - 10 - 100 $25.26 1000 $25.26 10000 $25.26	Buy Now
onsemi 2N6427 TRANS NPN DARL 40V 0.5A TO92
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DigiKey	2N6427	Bulk			5,000	1 - 10 - 100 - 1000 - 10000 $0.06501	Buy Now
NexGen Digital	2N6427		200			1 - 10 - 100 - 1000 - 10000 -	Get Quote
New Advantage Corporation	2N6427		199		1	1 $1 10 $1 100 $0.03 1000 $0.03 10000 $0.03	Buy Now
Microchip Technology Inc 2N6425 TRANS PNP 300V 1A TO66
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DigiKey	2N6425	Bulk			100	1 - 10 - 100 $26.4501 1000 $26.4501 10000 $26.4501	Buy Now
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Newark	2N6425	Bulk			100	1 - 10 - 100 $26.45 1000 $25.43 10000 $25.43	Buy Now
Microchip Technology Inc	2N6425			36 Weeks		1 $28.49 10 $28.49 100 $28.49 1000 $28.49 10000 $28.49	Buy Now
Onlinecomponents.com	2N6425					1 - 10 - 100 $25.26 1000 $25.26 10000 $25.26	Buy Now

NAC	2N6425	Tray			12	1 $29.07 10 $29.07 100 $26.78 1000 $24.82 10000 $24.82	Buy Now
Master Electronics	2N6425					1 - 10 - 100 $25.26 1000 $25.26 10000 $25.26	Buy Now
Microchip Technology Inc 2N6424 TRANS PNP 225V 1A TO66
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DigiKey	2N6424	Bulk			100	1 - 10 - 100 $26.4501 1000 $26.4501 10000 $26.4501	Buy Now
Mouser Electronics	2N6424					1 - 10 - 100 $26.45 1000 $26.45 10000 $26.45	Get Quote
Newark	2N6424	Bulk			100	1 - 10 - 100 $26.45 1000 $25.43 10000 $25.43	Buy Now
Microchip Technology Inc	2N6424			36 Weeks		1 $28.49 10 $28.49 100 $28.49 1000 $28.49 10000 $28.49	Buy Now
Onlinecomponents.com	2N6424					1 - 10 - 100 $25.26 1000 $25.26 10000 $25.26	Buy Now

NAC	2N6424	Tray			12	1 $29.07 10 $29.07 100 $26.78 1000 $24.82 10000 $24.82	Buy Now
Master Electronics	2N6424					1 - 10 - 100 $25.26 1000 $25.26 10000 $25.26	Buy Now

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2N642 Datasheets (238)

Part	Manufacturer	Description	Datasheet Type	PDF
2N642	Motorola	Motorola Semiconductor Datasheet Library	Scan	PDF
2N642	Unknown	Discontinued Transistor Data Book 1975	Scan	PDF
2N642	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2N642	Unknown	Vintage Transistor Datasheets	Scan	PDF
2N642	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2N642	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2N642	Unknown	GE Transistor Specifications	Scan	PDF
2N642	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2N642	RCA	RCA Transistor and Diode Data	Scan	PDF
2N6420	Central Semiconductor	Power Transistors	Original	PDF
2N6420	Semelab	Bipolar PNP Device in a Hermetically Sealed TO66 Metal Package - Pol=PNP / Pkg=TO66 / Vceo=175 / Ic=1 / Hfe=40/200 / fT(Hz)=10M / Pwr(W)=35	Original	PDF
2N6420	Boca Semiconductor	COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS - Pol=PNP / Pkg=TO66 / Vceo=175 / Ic=1 / Hfe=40/200 / fT(Hz)=10M / Pwr(W)=35	Scan	PDF
2N6420	General Electric	High-voltage, medium-power silicon P-N-P transistor. - Pol=PNP / Pkg=TO66 / Vceo=175 / Ic=1 / Hfe=40/200 / fT(Hz)=10M / Pwr(W)=35	Scan	PDF
2N6420	Mospec	POWER TRANSISTORS(35W) - Pol=PNP / Pkg=TO66 / Vceo=175 / Ic=1 / Hfe=40/200 / fT(Hz)=10M / Pwr(W)=35	Scan	PDF

2N6420	Mospec	Complementary Medium-Power High Voltage Power Transistor	Scan	PDF
2N6420	Motorola	The European Selection Data Book 1976	Scan	PDF
2N6420	Motorola	European Master Selection Guide 1986	Scan	PDF
2N6420	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF
2N6420	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
2N6420	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF

...

2N642 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2N6427 Abstract: 2N6426 Text: ON Semiconductort 2N6426* 2N6427 Darlington Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 40 Vdc Emitter–Base Voltage VEBO 12 Vdc	Original	2N6426* 2N6427 r14525 2N6426/D 2N6427 2N6426	PDF
2N6426G Abstract: 2N6427 2N6426 2N6426RLRA 2N6427RLRA 2N6427RLRAG 2n64 Text: 2N6426, 2N6427 Preferred Device Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available • Device Marking: Device Type, e.g., 2N6426, Date Code http://onsemi.com COLLECTOR 3 BASE 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage	Original	2N6426* 2N6427 2N6426, 2N6426/D 2N6426G 2N6427 2N6426 2N6426RLRA 2N6427RLRA 2N6427RLRAG 2n64	PDF
2N6428 Abstract: as dc hfe nv 2N6428A 2N5088 Text: 2N6428/6428A 2N6428/6428A Amplifier Transistor • Collector-Emitter Voltage: VCEO= 50V • Collector Dissipation: PC max =625mW TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted	Original	2N6428/6428A 625mW 2N5088 2N6428 as dc hfe nv 2N6428A	PDF
Untitled Abstract: No abstract text available Text: 2N6428/6428A NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: VCEO= 50V • Collector Dissipation: PC max =625mW ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Symbol VCBO VCEO VEBO IC PC TJ T STG Collector-Base Voltage	Original	2N6428/6428A 625mW 2N5088	PDF
Untitled Abstract: No abstract text available Text: 2N6421 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a	Original	2N6421 O213AA) 30-Jul-02	PDF
Untitled Abstract: No abstract text available Text: 2N6425A Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a	Original	2N6425A O213AA) 30-Jul-02	PDF
Untitled Abstract: No abstract text available Text: 2N6420 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a	Original	2N6420 O213AA) 30-Jul-02	PDF
Untitled Abstract: No abstract text available Text: 2N6426 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted	Original	2N6426 MPSA14	PDF
2SA1402E Abstract: 2SC2224 2SA1371E Text: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 30 i:;:'''', .U(U 2SA1407E 2SA1407F 2N2894 KF3509 2N3209 2N3209L PZT3906 RXT3906 RXT3906 2SA1404D 2SA1404E 2SA1404F 2SA1541 2SA1476 2SA964 2SC2224 BFN19 ~~~J~A 35 40 2SA795 MJ373B 2N6424 MJ3739 2N6425	Original	2SA1407E 2SA1407F 2N2894 KF3509 2N3209 2N3209L PZT3906 RXT3906 2SA1404D 2SA1402E 2SC2224 2SA1371E	PDF
2N6420 Abstract: transistor pnp 1a operational amplifier power 1A Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2N6420 DESCRIPTION •Contunuous Collector Current-IC= -1A ·Power Dissipation-PC= 35W @TC= 25℃ ·Collector-Emitter Saturation Voltage: VCE sat = -5.0 V(Max)@ IC = -1A APPLICATIONS	Original	2N6420 -50mA -150V; -225V; 2N6420 transistor pnp 1a operational amplifier power 1A	PDF
2N3738 equivalent Abstract: 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 2N6049 2N6420 Text: Power Transistors TO-66 Case TYPE NO. NPN 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 PNP 2N6049 2N6420 2N6421 2N6422 2N3740 2N3740A 2N3741 2N3741A 2N3766 2N3767 2N4231 2N4231A 2N4232 2N4232A 2N4233 2N4233A 2N4240 2N4296 2N4298 2N4299 2N4910 2N4911 2N4912	Original	2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 2N6049 2N6420 2N6421 2N3738 equivalent 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 2N6049 2N6420	PDF
2N6422 Abstract: No abstract text available Text: 2N6422 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a	Original	2N6422 O213AA) 1-Aug-02 2N6422	PDF
2N6421 Abstract: No abstract text available Text: 2N6421 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a	Original	2N6421 O213AA) 1-Aug-02 2N6421	PDF
2N6427 Abstract: CBVK741B019 F63TNR MMBT6427 MPSA14 PN2222N sot23 mark code e2 MPS-A14 Text: 2N6427 / MMBT6427 2N6427 MMBT6427 C E C B TO-92 B SOT-23 E Mark: 1V NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.	Original	2N6427 MMBT6427 2N6427 OT-23 MPSA14 CBVK741B019 F63TNR MMBT6427 PN2222N sot23 mark code e2 MPS-A14	PDF

LB 124 transistor Abstract: LB 124 d MPQ6427 transistor BC 236 16-SOIC 2N6427 MMBT6427 Text: 2N6427/MMBT6427/MPQ6427 NATL SEMICOND OISCRETE 11E: D \| k 501130 T-33-21 5 ^ N a tio n a l J l A S e m ic o n d u c to r 2N6427 E llllll Ull MMBT6427 MPQ6427* TO “ 236 S O T - 23 T O -9 2 ^ \| C =E 10-116 TL/G/10100-7 TL/Q/10100-5 Bc TUG/10100-1 NPN Darlington Transistor	OCR Scan	bSD1130 00372b0 T-33-21 2N6427 MMBT6427 MPQ6427* to-236 sot-23) TL/G/10100-7 TL/Q/10100-5 LB 124 transistor LB 124 d MPQ6427 transistor BC 236 16-SOIC	PDF
clare mercury relay Abstract: P609 30343 power 2N6422 2N6421 30343 2N6422 GE Text: HARRIS SEMICOND SECTOR SbE ì> 2N6420, 2N6421, 2N6422, 2N6423 4302 27 1 QD4D552 ^03 • H A S File Number 1100 T 3 3 -R High-Voltage Medium-Power Silicon P-N-P Transistors For High-Speed Switching and Linear-Amplifier Applications Features: ■ High voltage ratings:	OCR Scan	2N6420, 2N6421, 2N6422, 2N6423 QD4D552 2N6420) 2N6421) 2N6422) 2N6423) clare mercury relay P609 30343 power 2N6422 2N6421 30343 2N6422 GE	PDF
2N6427 Abstract: MMBT6427 MPSA14 Text: N 2N6427 MMBT6427 Mark: 1V NPN Darlington Transistor T his device is designed for applications requiring extrem ely high current gain at collector currents to 1.0 A. Sourced from Process 05. See M PSA14 for characteristics. Absolute Maximum Ratings* ta = 2 5 ° C unless o th e rw ise noted	OCR Scan	2N6427 MMBT6427 MPSA14 MMBT6427	PDF
2N6427 Abstract: MMBT6427 MPSA14 Text: 2N6427 I MMBT6427 Discrete POWER & Signal Technologies National S e m i c o n d u c t o r " MMBT6427 2N6427 SOT-23 B Mark: 1V NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from	OCR Scan	2N6427 MMBT6427 OT-23 MPSA14 bSG113D 2N6427 MMBT6427	PDF
Untitled Abstract: No abstract text available Text: 2N6427 MMBT6427 SOT-23 M ark: 1V NPN Darlington Transistor This device is designed for applications requiring extrem ely high current gain at collector currents to 1.0 A. Sourced from Process 05. See M PSA14 for characteristics. Absolute Maximum RâtinÇjS	OCR Scan	2N6427 MMBT6427 2N6427 OT-23 PSA14	PDF
Untitled Abstract: No abstract text available Text: 2N6428/6428A NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO -92 • C ollector-E m itter Voltage: V C e o = 50V • C ollecto r D issipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Sym bol C ollector-B ase Voltage C ollector-E m itter Voltage	OCR Scan	2N6428/6428A z-10K 2N6428 2N6428A 100Hz	PDF
2sc498 Abstract: 2SC875 2SA503 2sc1175 FT501 2N6428 2SA532 2SA606 2sa708 2N6714 Text: Medium Power Amplifiers and Switches TYPE NO. RITY HFE MAXIMUM RATINGS POLA CASE Pd IC VCEO mW (A) (V) min VCE(sat) fT Cob COMPLE min max MENTARY IC VCE max max (mA) (V) (V) (A) (MHz) (PF> TYPE . 2N6428 2N6714 2N6715 2N6716 2N6726 N N N N P TO-92A TO-237	OCR Scan	2N6428 O-92A 2N6714 O-237 2N6726 2N6715 2N6727 2N6716 2sc498 2SC875 2SA503 2sc1175 FT501 2SA532 2SA606 2sa708	PDF
Untitled Abstract: No abstract text available Text: SEMICONDUCTOR • 2N6426 . TO-92 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum RatinQS TA = 25°C unless otherwise noted	OCR Scan	2N6426 MPSA14	PDF
6428A Abstract: 2N6428 2n5088 transistor 2N5088 2N6428A N6428 Text: 2N6428/6428A NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO -92 • C ollector-E m itter Voltage: V Ceo= 50V • C ollector Dissipation: P c m a x = 62 5 m W ABSOLUTE MAXIMUM RATINGS (Ta=25°C) C haracteristic Sym bol C ollector-Base Voltage C ollector-E m itter Voltage	OCR Scan	2N6428/6428A 625mW 2N5088 100nA, 100HA 100mA, N6428 N6428A 100HA 100Hz 6428A 2N6428 2n5088 transistor 2N6428A N6428	PDF
2N6427 Abstract: MMBT6427 MPSA14 Text: N MMBT6427 2N6427 c TO-92 BE SOT-23 B M ark: 1V NPN Darlington Transistor This device is designed for applications requiring extrem ely high current gain at collector currents to 1.0 A. Sourced from Process 05. See M PSA14 for characteristics. Absolute Maximum Rstinys	OCR Scan	2N6427 MMBT6427 OT-23 MPSA14 2N6427 MMBT6427	PDF

2N642 Search Results

2N642 Price and Stock

Microchip Technology Inc 2N6420

Microchip Technology Inc 2N6421

onsemi 2N6427

Microchip Technology Inc 2N6425

Microchip Technology Inc 2N6424

2N642 Datasheets (238)

2N642 Datasheets Context Search

2N6427

2N6426G

2N6428

Untitled

Untitled

Untitled

Untitled

Untitled

2SA1402E

2N6420

2N3738 equivalent

2N6422

2N6421

2N6427

LB 124 transistor

clare mercury relay

2N6427

2N6427

Untitled

Untitled

2sc498

Untitled

6428A

2N6427