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    2N6350 EQUIVALENT Search Results

    2N6350 EQUIVALENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    2N6350 EQUIVALENT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6351

    Abstract: No abstract text available
    Text: 2N6350 and 2N6351 NPN Darlington Power Silicon Transistor Available on commercial versions Qualified per MIL-PRF-19500/472 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high speed NPN transistor is military qualified up to the JANTXV level. This TO-33


    Original     		PDF 2N6350 2N6351 MIL-PRF-19500/472 T4-LDS-0314, 2N6351

    2N6350

    Abstract: 2N6350 equivalent
    Text: 2N6350 and 2N6351 NPN Darlington Power Silicon Transistor Available on commercial versions Qualified per MIL-PRF-19500/472 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high speed NPN transistor is military qualified up to the JANTXV level. This TO-33


    Original     		PDF 2N6350 2N6351 MIL-PRF-19500/472 T4-LDS-0314, 2N6350 equivalent

    2N6350 equivalent

    Abstract: 2N6352 2N6351 2N6353 2N6350 JANTX 2N6351 JAN 2N6351
    Text: INCH POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 9 January 2007. MIL-PRF-19500/472E 9 October 2007 SUPERSEDING MIL-PRF-19500/472D 9 May 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, NPN, SILICON,


    Original     		PDF MIL-PRF-19500/472E MIL-PRF-19500/472D 2N6350, 2N6351, 2N6352, 2N6353, MIL-PRF-19500. 2N6350 equivalent 2N6352 2N6351 2N6353 2N6350 JANTX 2N6351 JAN 2N6351

    SDM3303

    Abstract: SL 100 NPN Transistor base emitter collector 2N6350 SDM3103 transistor c35 equivalent NPN Transistor VCEO 80V 100V DARLINGTON
    Text: -JSutron Devices. Inc. MEDIUM VOLTAGE, FAST SWITCHING, HIGH GAIN MONOLITHIC NPN EPITAXIAL PLANAR POWER DARLINGTON TRANSISTOR*« FORMERLY 03] CHIP NUMBER dTI CONTACT METALLIZATION A Base and emitter: > 30,000 Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver'' also available


    OCR Scan     		PDF 203mm) O-66/3 SDM3303 SL 100 NPN Transistor base emitter collector 2N6350 SDM3103 transistor c35 equivalent NPN Transistor VCEO 80V 100V DARLINGTON

    Untitled

    Abstract: No abstract text available
    Text: Contran Ä ¥Ä 1L© M E D IU M VOLTAGE, FAST SW ITCHING, HIGH GAIN Devices. Inc MONOLITHIC N P N EPITAXIAL PLANAR POWER DARLINGTON TR A N S IS TO R * (FORMERLY 0 3 ] CHIP NUMBER c -n CONTACT METALLIZATION B a se and emitter: > 30,000 A Aluminum Collector: Gold


    OCR Scan     		PDF 203mm)

    Solitron Devices

    Abstract: 452M
    Text: 8 3 6 8 6 0 2 SOL ITRON D E V I C E S INC 7 DF|fl3bflL0H DDG2flES S 95D 0 2 825 S0LITR0N DEVICES INC ^5 D MTÄ[L© Devices, Inc. M EDIUM VOLTAGE, FAST SWITCHING MONOLITHIC N PN EPITAXIAL PLANAR POWER DARLINGTON TRANSISTOR* [FORMERLY 03 ] CHIP NUMBER CONTACT METALLIZATION


    OCR Scan     		PDF 203mm) ultrasoniSDM3303; SDM3103; 2N6350 Solitron Devices 452M

    triacs bt 804 600v

    Abstract: UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier
    Text: UNITRODE SEMICONDUCTOR DATABOOK 1976 C opyright 1976 U nitrode C orporation, W atertown, MA. A ll rights reserved. INTRODUCTION From its inception 16 years ago, Unitrode has acquired a reputa­ tion for maintaining an unusually high level of quality, perfor­


    OCR Scan     		PDF Comp27-1296 triacs bt 804 600v UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711