IDC2555
Abstract: TIPL763A BU526 2N630B 250n
Text: POWER SILICON NPN Item Number Part Number V I C) 5 10 15 20 25 30 55 60 65 70 75 BO B5 90 95 Max (Hz) leBO Max (A t, Max Tope, Max (I) eC) Package Style >= 5 A, (Cont'd) B.O B.O B.O B.O B.O B.O B.O B.O B.O B.O 350 350 350 350 350 350 350 350 350 350 4.0 4.0
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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2N6306
Abstract: 2N6307 2n6308 zn63 2N6307 Motorola
Text: #% • im-_ -4 ^ iy ^ « M > - jw y g .'á MOTOROLA SEM ICO NDUCTO R TECHNICAL DATA 2N6306 2N6307, 2N6308 HIGH VO LTAG E NPN SILICON POWER TRANSISTORS 8 AMPERE POWER TRANSISTORS NPN SILICON . . . designed for high voltage Inverters, switching regulators and lineoperated amplifier applications. Especially well suited for switching
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2N6306
2N6307,
2N6308
2NS306
2N6307
--2N6306,
2N6308
2N6306
2N6307
zn63
2N6307 Motorola
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