2N6304

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N6304 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • Silicon RF NPN, TO-72, UHF general purpose Low Noise Transistor Noise Figure = 5.0 dB (typ) @ f = 450 MHz

2N6303

Contextual Info: 2N6303 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 120V 0.41 (0.016)

2N6298

Abstract: 2N6299 2N6300 2N6301
Contextual Info: 2N6298, 2N6299 PNP I 2N6300, 2N6301 NPN ELECTRICAL CHARACTERISTICS Tc = 25°C unless otherwise noted Symbol Characteristic Min Max Unit OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage (1) ( lc = 100 mA, lB = 0 ) Collector Cutoff Current ( V CE = 30 V, lB = 0 )

2n6304

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N6304 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • Silicon RF NPN, TO-72, UHF general purpose Low Noise Transistor Noise Figure = 5.0 dB (typ) @ f = 450 MHz

2NG307

Abstract: 2N6306 ns802 2N6307 2N6308 unitrode 655
Contextual Info: POWER TRANSISTORS S 8 Amp, 700V, Triple Diffused NPN Mesa 2N6308 FEATURES • Collector-Base Voltage: up to 700V • Peak Collector Current: 16A • Rise Time: ^ 600 n s • Fall Time: < 400 ns f @ ' c “ 3A D E S C R IP T IO N These high voltage triple diffused glass

2N6300

Contextual Info: 2N6300 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a

2N6304

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N6304 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • Silicon RF NPN, TO-72, UHF general purpose Low Noise Transistor Noise Figure = 5.0 dB (typ) @ f = 450 MHz

2N6306

Abstract: 2n6307 TO-204aa MICROSEMI PACKAGE OUTLINE 2N6308
Contextual Info: 61 1 5 9 5 0 MICROSEMI CORP/POWER DB DE j b l l S i S O 02E~W£12 OODOms D a |~ 2N6306 2N6307 2N6308 TECHN O LO G Y Power Technology Components HIGH VOLTAGE NPN TRANSISTORS 8 AMPERES 700 VOLTS FEATURES APPLICATIONS • • • • • • • • • High Voltage Rating 700 Volts

2N6307 Motorola

Abstract: 2N6308 2N6306 2N6303 2n6308 motorola
Contextual Info: MOTOROLA SC XSTRS/R F g . . - ï^ N _ - . - 12E D I k3k72S4 OOAIbeb 7 | MOTOROLA 7^ 33 -/3 2N6303 SEMICONDUCTOR TECHNICAL DATA 2N6306 2N6307, 2N6308 HIGH VOLTAGE NPN SILICON POWER TRANSISTORS 8 AMPERE POWER TRANSISTORS NPN SILICON . . . designed for high voltage inverters, switching regulators and lineoperated amplifier applications. Especially well suited for switching

Contextual Info: <Se.rn.i- Conductor £Ptoducts., inc. 20 STERN AVE. SPRINGFIELD, NEW JERSE\.'07081 2N3719. 2N3720 2N3867. 2N3868 2N6303 3 AMPERE POWER TRANSISTORS PNP SILICON 40.60,80 VOLTS 6 WATTS TELEPHONE: (201 376-2922 /^ (212)227-6005 ,0fe\: (201) 376-8960 •MAXIMUM RA1riNGS

Contextual Info: 2N6298 2N6299 2N6300 2N6301 PNP NPN COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6298 series devices are complementary silicon Darlington power transistors manufactured by the epitaxial base process

2N6303

Contextual Info: 7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: 561 842-0305 FAX: (561) 845-7813 2N6303 APPLICATIONS: • • • High-Speed Switching Medium-Current Switching High-Frequency Amplifiers FEATURES: • • • • Collector-Emitter Sustaining Voltage: VCEO(sus) = - 80 Vdc (Min)

60N60

Abstract: 2N6300
Contextual Info: 2N6300 60 V darlington complementary NPN silicon power transistor 9.00 Transistors D. Page 1 of 2 Enter Your Part # Home Part Number: 2N6300 Online Store 2N6300 Diodes 60 Transistors V darlington complementary NPN silicon transistor Integrated Circuits Optoelectronics

Contextual Info: 2N6306 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

Contextual Info: 2N6300 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a

2n6300

Contextual Info: NPN Darlington Power Silicon Transistor 2N6300 & 2N6301 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/539 • TO-66 TO-213AA Package Maximum Ratings Symbol 2N6300 2N6301 Units Collector - Emitter Voltage Ratings VCEO 60 80 Vdc Collector - Base Voltage

2N6301 applications

Abstract: TO-213AA 1000C 2N6300 2N6301
Contextual Info: TECHNICAL DATA 2N6300 JTX, JTXV 2N6301 JTX, JTXV Processed per MIL-PRF-19500/539 NPN DARLINGTON POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TC = 00C 1

Contextual Info: 2N6306 m \\ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N6306 is Designed for General Purpose High Voltage Amplifier and Switching Applications PACKAGE STYLE T O - 3 k. I MAX. MAXIMUM RATINGS lc 8.0 A Ib 4.0 A V ce 250 V P diss 125 W @ Tc = 25 °C 3 MAX.

2N6308

Contextual Info: Inchange Semiconductor Product Specification 2N6308 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High breakdown voltage ·High power dissipation APPLICATIONS ·Designed for high voltage inverters, switching regulators,line operated amplifiers,

2N6302

Contextual Info: Inchange Semiconductor Product Specification 2N6302 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·High DC current gain @IC=8A APPLICATIONS ·Designed for use in high power audio amplifier applications and high voltage

2N2880

Abstract: 2N5004 2N3055S 2N5672 TO111 2N2658 2N2814 2N3599 2N3741 2N3749
Contextual Info: Device Type 2N2658 2N2658 2N2814 2N2880 2N2880 2M2880 2N3055S 2N3599 2N3741 2N3749 2N5004 2N5005 2N5038 2N5074 2N5153 2N5539 2N5672 2N6307 SDT3229 SDT55907 SDT55907 Control Drawing 5203/02505B 5203/02506B 5203/031B 5203/02503B 5203/02501B 5203/02502B 5203/00301B

2N6304

Contextual Info: LE.I\E,UtJ tSe.ml-Condiicto'i ^Pioduct*., One. Cf TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N6304 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features Silicon RF NPN, TO-72, UHF general purpose Low Noise

2N6301

Contextual Info: 2N6300 and 2N6301 NPN Darlington Power Silicon Transistor Available Qualified per MIL-PRF-19500/539 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high speed NPN transistor is rated at 8 amps and is military qualified up to a JANTXV level. This TO-213AA isolated package features a 180 degree lead orientation.

2n6306

Abstract: 2N6307 2N6308 npn high voltage transistor 500v 8a NPN Transistor 600V NPN Transistor 600V 2A World transistors and ic vbe 10v, vce 500v NPN Transistor 250V transistor npn 2a
Contextual Info: Datasheet 2N6306 2N6307 2N6308 Central Sem iconductor Corp. NPN Silicon T r a n s i s t o r 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC T0-3 Case Manufacturers of World Class Discrete Semiconductors DESCRIPTION