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    2N6282 NEW ENGLAND SEMICONDUCTOR Search Results

    2N6282 NEW ENGLAND SEMICONDUCTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    2N6282 NEW ENGLAND SEMICONDUCTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6287 JANTX

    Abstract: 2N6282 amplifier transistor 2N6284 2N6283 2N6284 2N6285 2N6286 2N6287 2N6282 NEW ENGLAND SEMICONDUCTOR 2N62B
    Text: NPN PNP 2N6282 2N6285* 2N6283* 2N6286* 2N6284* 2N6287* *also a v a ila b le as JA N , JA N T X , JA N T X V DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for general-purpose am plifier and low frequency switching applications. Collector-Em itter Sustaining Voltage —


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    PDF 2N6282 2N6285* 2N6283* 2N6286* 2N6284* 2N6287* 2N6282, 2N6285 2N6283, 2N6286 2N6287 JANTX amplifier transistor 2N6284 2N6283 2N6284 2N6285 2N6286 2N6287 2N6282 NEW ENGLAND SEMICONDUCTOR 2N62B

    Untitled

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR DARLINGTON PNP TRANSISTOR VcEO sus VOLTS Ic (max) AMPS 2N6050 60 12 2N6051A 80 2N6052A PACKAGE DEVICE TYPE PNP TO-3 TO-204AA TO-254AA hrE @ Id VCE min/max @ A/V ^ C E (sa t) @ Ic/Iß V @ A/A c ¥* p fx (MHz) 750/18000@6/3


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    PDF 2N6050 2N6051A 2N6052A O-204AA 2N6285 2N6286A 2N6287A 2N7371A 2N6057A

    transistor 206

    Abstract: 2N7370 AN-750 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 2N6285
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR DARLINGTON PNP TRANSISTOR sus VOLTS Ic (max) AMPS 2N6050 60 12 2N6051 80 2N6052 PACKAGE DEVICE TYPE PNP TO-3 TO-204AA flCX TO-254AA V cE O Ic/ V c E min/max @ A/V 1*FE @ ^C E (sat) @ IC/IB V @ A/A C(P P Ît (MHz) 750/18000@6/3


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    PDF 2N6050 O-204AA 2N6051 2N6052 2N6285 2N6286 2N6287 O-254AA 2N7371 T0-204AA transistor 206 2N7370 AN-750 2N6057 2N6058 2N6059

    2N6057A

    Abstract: 2N6058A 2N6282 TO-204AA transistor transistor 206 2N7370 2N6050 2N6285
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR DARLINGTON PNP TRANSISTOR 2N6050 60 2N6051A hpE @ V VCE ^CE sat min/max @ A/V @ Ic/Iß V @ A/A C<p P (MHz) 12 750/18000@6/3 2.0@6/.024 500 4.0 80 12 750/18000@6/3 2.0@6/.024 500 4.0 2N6052A 100 12 750/18000@6/3 2.0@6/.024


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    PDF 2N6050 O-204AA 2N6051A 2N6052A 2N6285 2N6286A 2N6287A O-254AA 2N7371A 2N6057A 2N6058A 2N6282 TO-204AA transistor transistor 206 2N7370

    Germanium drift transistor

    Abstract: 2N4895 germanium transistor epitaxial mesa transistor sec tip31A halbleiter index transistor transistor BD222 BD699 EQUIVALENT kd 2060 transistor
    Text: POWER DATA BOOK FAIRCHILD 464 Ellis Street, Mountain View, California 94042 1976 Fairchild Camera and Instrum ent C orporation/464 Ellis Street, M ountain View, California 940 4 2 / 4 15 9 6 2 -5 0 1 1/TW X 910 -3 7 9-6 4 3 5 INTRODUCTION You, the customer, and your needs have dictated the form at and contents of


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    PDF orporation/464 CH-8105 Germanium drift transistor 2N4895 germanium transistor epitaxial mesa transistor sec tip31A halbleiter index transistor transistor BD222 BD699 EQUIVALENT kd 2060 transistor

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


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    PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711