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    2N6043 DATA SHEET Search Results

    2N6043 DATA SHEET Result Highlights (5)

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    NFMJMPC226R0G3D Murata Manufacturing Co Ltd Data Line Filter, Visit Murata Manufacturing Co Ltd
    NFM15PC755R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    NFM15PC435R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    NFM15PC915R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    MP-52RJ11SNNE-100 Amphenol Cables on Demand Amphenol MP-52RJ11SNNE-100 Shielded CAT5e 2-Pair RJ11 Data Cable [AT&T U-Verse & Verizon FiOS Data Cable] - CAT5e PBX Patch Cable with 6P6C RJ11 Connectors (Straight-Thru) 100ft Datasheet

    2N6043 DATA SHEET Datasheets Context Search

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    MJE34 pnp

    Abstract: 2N6041 application 2SC493 2SA1046 MJ15003 300 watts amplifier 2SC334 bc 617 transistor equivalent BUX98A pin configuration NPN transistor tip41c BU326
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors PNP 2N6040 thru 2N6042* NPN 2N6043 thru 2N6045* . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain —


    Original     		PDF 2N6040, 2N6043 2N6041, 2N6044 2N6042, 2N6045 2N6040 MJE34 pnp 2N6041 application 2SC493 2SA1046 MJ15003 300 watts amplifier 2SC334 bc 617 transistor equivalent BUX98A pin configuration NPN transistor tip41c BU326

    2N6041 MOTOROLA

    Abstract: 2N6045 MOTOROLA 2n6042 motorola 2N6043 MOTOROLA 2N6044 MOTOROLA 2N6041 1N5825 2N6040 2N6042 2N6041 application
    Text: MOTOROLA Order this document by 2N6040/D SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors PNP 2N6040 thru 2N6042* NPN 2N6043 thru 2N6045* . . . designed for general–purpose amplifier and low–speed switching applications.


    Original     		PDF 2N6040/D 2N6040 2N6042* 2N6043 2N6045* 2N6040, 2N6041, 2N6044 2N6042, 2N6041 MOTOROLA 2N6045 MOTOROLA 2n6042 motorola 2N6043 MOTOROLA 2N6044 MOTOROLA 2N6041 1N5825 2N6040 2N6042 2N6041 application

    2N6040

    Abstract: 2N6045G 2N6043G 2N6040G 2N6042 2N6045 2N6042G 2N6041 2N6043 2N6044
    Text: PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045 2N6043 and 2N6045 are Preferred Devices Plastic Medium-Power Complementary Silicon Transistors Plastic medium-power complementary silicon transistors are designed for general-purpose amplifier and low-speed switching


    Original     		PDF 2N6040, 2N6042, 2N6043, 2N6045 2N6043 2N6045 2N6043 2N6040 2N6045G 2N6043G 2N6040G 2N6042 2N6042G 2N6041 2N6044

    2N6045G

    Abstract: 2N6045 2N6040 2N6041 2N6042 2N6043 2N6044 2N6043G 2N6045 NPN POWER DARLINGTON
    Text: PNP − 2N6040, 2N6042, NPN − 2N6043, 2N6045 2N6043 and 2N6045 are Preferred Devices Plastic Medium−Power Complementary Silicon Transistors Plastic medium−power complementary silicon transistors are designed for general−purpose amplifier and low−speed switching


    Original     		PDF 2N6040, 2N6042, 2N6043, 2N6045 2N6043 2N6045 2N6043 2N6045G 2N6040 2N6041 2N6042 2N6044 2N6043G 2N6045 NPN POWER DARLINGTON

    Untitled

    Abstract: No abstract text available
    Text: PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045 Plastic Medium-Power Complementary Silicon Transistors Plastic medium−power complementary silicon transistors are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 Typ @ IC = 4.0 Adc


    Original     		PDF 2N6040, 2N6042, 2N6043, 2N6045 2N6043 2N6043

    2N6045G

    Abstract: 2N6040 2N6042 2N6045 2N6040G 2N6041 2N6043 2N6044 transistor marking T2
    Text: PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045 2N6043 and 2N6045 are Preferred Devices Plastic Medium-Power Complementary Silicon Transistors Plastic medium-power complementary silicon transistors are designed for general-purpose amplifier and low-speed switching


    Original     		PDF 2N6040, 2N6042, 2N6043, 2N6045 2N6043 2N6045 2N6043 2N6045G 2N6040 2N6042 2N6040G 2N6041 2N6044 transistor marking T2

    2N6040

    Abstract: 2N6041 2N6042 2N6043 2N6044 2N6045
    Text: ON Semiconductor PNP Plastic Medium-Power Complementary Silicon Transistors 2N6040 2N6042 2N6043 * NPN 2N6045* . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain – hFE = 2500 Typ) @ IC = 4.0 Adc


    Original     		PDF 2N6040 2N6042 2N6043 2N6045* 2N6040, 2N6042, 2N6045 2N6043 2N6040 2N6041 2N6042 2N6044 2N6045

    2N6042G

    Abstract: 2N6042 2n6043
    Text: PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045 Plastic Medium-Power Complementary Silicon Transistors Plastic medium−power complementary silicon transistors are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 Typ @ IC = 4.0 Adc


    Original     		PDF 2N6040, 2N6042, 2N6043, 2N6045 2N6040/D 2N6042G 2N6042 2n6043

    equivalent 2N6040

    Abstract: 2N6043 data sheet 400 watts amplifier circuit diagram 2N6040 2N6041 2N6042 2N6043 2N6044 2N6045 2NXXXX
    Text: PNP 2N6040, 2N6042, (NPN) 2N6043*, 2N6045* *Preferred Device Plastic Medium−Power Complementary Silicon Transistors . . . designed for general−purpose amplifier and low−speed switching applications. • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc


    Original     		PDF 2N6040, 2N6042, 2N6043* 2N6045* 2N6043 2N6045 2N6043 equivalent 2N6040 2N6043 data sheet 400 watts amplifier circuit diagram 2N6040 2N6041 2N6042 2N6044 2N6045 2NXXXX

    2NXXXX

    Abstract: 2nxxx
    Text: PNP 2N6040, 2N6042, (NPN) 2N6043*, 2N6045* *Preferred Device Plastic Medium−Power Complementary Silicon Transistors . . . designed for general−purpose amplifier and low−speed switching applications. • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc


    Original     		PDF 2N6040, 2N6042, 2N6043* 2N6045* 2N6043 2N6045 2N6043 2NXXXX 2nxxx

    2N6041

    Abstract: 2N6042 2N6043 data sheet 2N6040 2N6043 2N6044 2N6045 2N6041 application
    Text: ON Semiconductort PNP Plastic Medium-Power Complementary Silicon Transistors 2N6040 thru 2N6042 * NPN 2N6043 thru 2N6045* . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 Typ @ IC = 4.0 Adc


    Original     		PDF 2N6040 2N6042 2N6043 2N6045* 2N6040, 2N6041, 2N6044 2N6042, 2N6045 2N6041 2N6042 2N6043 data sheet 2N6040 2N6043 2N6044 2N6045 2N6041 application

    mj150* darlington

    Abstract: BJT BD139 TIP102 Darlington transistor MJ31193 npn darlington transistor 200 watts MJ11029 BJT transistor 400 volts.100 amperes 300 volt 16 ampere transistor npn darlington transistor 150 watts mj15004 pnp
    Text: Numeric Data Sheet Listing Data Sheet Function Page 2N3055A, MJ15015, MJ15016 15 Ampere Complementary Silicon Power Transistors 60, 120 Volts . . . . . . . . . . . . . . 29 2N3055, MJ2955 15 A Power Transistors Complementary Silicon 60 V 115 W . . . . . . . . . . . . . . . . . . . . 35


    Original     		PDF 2N3055A, MJ15015, MJ15016 2N3055, MJ2955 2N3442 2N3771, 2N3772 2N3773* 2N6609 mj150* darlington BJT BD139 TIP102 Darlington transistor MJ31193 npn darlington transistor 200 watts MJ11029 BJT transistor 400 volts.100 amperes 300 volt 16 ampere transistor npn darlington transistor 150 watts mj15004 pnp

    2N3773 NPN Audio Power AMP Transistor

    Abstract: 2N5192 BD441 mje15034 mj150* darlington transistor MJ15025 transistor Mj21194 TIP2955 application note MJ31193 mjl4281 MJE18006
    Text: BIPOLAR POWER TRANSISTORS SELECTOR GUIDE SELECTION BY PACKAGE IC Range Amps VCE Range (Volts) PD (Watts) SO−8 3.0 30 2.0 (Note 2) SOT−223 0.5−3.0 30 2.0 (Note 1) DPAK 0.5-10 40-450 12.5-25 D2PAK 5.0−15 80−450 50−75 DPAK 0.5-10 40-450 12.5-25


    Original     		PDF OT-223 O-225AA O-126) O-220AB O-220 O-218 O-247 O-264 O-204AA O-204AE 2N3773 NPN Audio Power AMP Transistor 2N5192 BD441 mje15034 mj150* darlington transistor MJ15025 transistor Mj21194 TIP2955 application note MJ31193 mjl4281 MJE18006

    sec tip41c

    Abstract: MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJL3281A* PNP MJL1302A*  Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS • The MJL3281A and MJL1302A are PowerBase power transistors for high power


    Original     		PDF MJL3281A MJL1302A MJL3281A* MJL1302A* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A sec tip41c MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943

    2SA1046

    Abstract: TIP147 pwm BU108 TO218 20A Darlington BU326 BU100 MJ423 motorola transistor 2N6547
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6547  Data Sheet Designer's Switchmode Series NPN Silicon Power Transistors The 2N6547 transistor is designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for 115 and


    Original     		PDF 2N6547 CASE32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SA1046 TIP147 pwm BU108 TO218 20A Darlington BU326 BU100 MJ423 motorola transistor 2N6547

    power transistors cross reference

    Abstract: motorola AN485 transistor master replacement guide buv18a motorola bipolar transistor GUIDE electronic ballast with MJE13003 mj150* darlington BUV488 mje15033 replacement bd135 TRANSISTOR REPLACEMENT GUIDE
    Text: Bipolar Power Transistors In Brief . . . Motorola’s broad line of Bipolar Power Transistors includes discrete and Darlington transistors in a variety of packages from the popular surface mount DPAK at 1.75 watts to the 250 watt TO-3 and TO–264. New products


    Original     		PDF MJW16212 225AA) MJE13003 BUH51 power transistors cross reference motorola AN485 transistor master replacement guide buv18a motorola bipolar transistor GUIDE electronic ballast with MJE13003 mj150* darlington BUV488 mje15033 replacement bd135 TRANSISTOR REPLACEMENT GUIDE

    MJ802 EQUIVALENT

    Abstract: 2N3055 equivalent transistor NUMBER MJ4502 EQUIVALENT bd131 equivalent bd139 equivalent ST T8 3580 MJ15025* equivalent MJ3055 equivalent BDX37 equivalent mje340 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ16110* MJW16110*  Data Sheet Designer's NPN Silicon Power Transistors *Motorola Preferred Device SWITCHMODE Bridge Series . . . specifically designed for use in half bridge and full bridge off line converters. •


    Original     		PDF MJ16110* MJW16110* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C MJ802 EQUIVALENT 2N3055 equivalent transistor NUMBER MJ4502 EQUIVALENT bd131 equivalent bd139 equivalent ST T8 3580 MJ15025* equivalent MJ3055 equivalent BDX37 equivalent mje340 equivalent

    TRANSISTOR 2SC2366 TO220

    Abstract: K 3569 7.v equivalent 2N3792 MOTOROLA 2N3055 transistor equivalent BU108 mjf18204 equivalent TRANSISTOR 2SC1669 motorola AN485 RCA1C07 D45H111
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18204 MJF18204  Data Sheet SWITCHMODE NPN Designer's Bipolar Power Transistor for Electronic Light Ballast and Switching Power Supply Applications POWER TRANSISTORS 5 AMPERES 1200 VOLTS 35 and 75 WATTS The MJE/MJF18204 have an application specific state–of–the–art die dedicated to


    Original     		PDF MJE/MJF18204 MJE18204 MJF18204 POW32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TRANSISTOR 2SC2366 TO220 K 3569 7.v equivalent 2N3792 MOTOROLA 2N3055 transistor equivalent BU108 mjf18204 equivalent TRANSISTOR 2SC1669 motorola AN485 RCA1C07 D45H111

    BU108

    Abstract: 2SA101 electronic ballast with MJE13002 2sa135 BUS47P BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18009 MJF18009  Data Sheet SWITCHMODE NPN Designer's Silicon Planar Power Transistor The MJE/MJF18009 has an application specific state–of–the–art die designed for use in 220 V line–operated Switchmode Power supplies and electronic ballast “light


    Original     		PDF MJE/MJF18009 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 2SA101 electronic ballast with MJE13002 2sa135 BUS47P BU326 BU100

    transistor cross reference

    Abstract: BD139 fall time motorola MJ15003 BU108 2SA1046 bd139 140 TIP42A equivalent motorola 2n3772 transistor mj3001 TL MJE2955T
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUH100  Data Sheet Designer's SWITCHMODE NPN Silicon Planar Power Transistor POWER TRANSISTOR 10 AMPERES 700 VOLTS 100 WATTS The BUH100 has an application specific state–of–art die designed for use in 100 Watts Halogen electronic transformers.


    Original     		PDF BUH100 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C transistor cross reference BD139 fall time motorola MJ15003 BU108 2SA1046 bd139 140 TIP42A equivalent motorola 2n3772 transistor mj3001 TL MJE2955T

    D45H11 equivalent replacement

    Abstract: transistor equivalent book 2SC2073 BDX36 equivalent bd139 equivalent transistor BUT11Af equivalent BU108 334 bdw93c f P6042 2SA818 equivalent transistor mj11028 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE16002* MJE16004*  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Transistors *Motorola Preferred Device These transistors are designed for high–voltage, high–speed switching of inductive circuits where fall time and RBSOA are critical. They are particularly well–suited for


    Original     		PDF MJE16004 MJE16002 MJH16002 Designe32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A D45H11 equivalent replacement transistor equivalent book 2SC2073 BDX36 equivalent bd139 equivalent transistor BUT11Af equivalent BU108 334 bdw93c f P6042 2SA818 equivalent transistor mj11028 equivalent

    BD140 application circuits circuits

    Abstract: equivalent 2n6488 2N6044 equivalent BU108 bd139 3v 2N3055 blocking TR TIP2955 st mje13005 2N3713 MOTOROLA TIP2955 DATA
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE13005*  Data Sheet *Motorola Preferred Device Designer's SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and


    Original     		PDF MJE13005* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BD140 application circuits circuits equivalent 2n6488 2N6044 equivalent BU108 bd139 3v 2N3055 blocking TR TIP2955 st mje13005 2N3713 MOTOROLA TIP2955 DATA

    tektronix type 576 curve tracer

    Abstract: tektronix 576 curve tracer Tracer 176 MR756 2n4401 die DIODO 4001 real time application of ASTABLE mode AN915 MOTOROLA line frequency diode AN915
    Text: AN915 MOTOROLA Semiconductor Products Inc. Application Note CHARACTERIZING COLLECTOR-TO-EMITTER AND DRAIN-TO-SOURCE DIODES FOR SWITCHMODE APPLICATIONS Prepared by Al Pshaenich Motorola Inc., Semiconductor Group Phoenix, Arizona ABSTRACT Most power Darlington transistors and power MOSFETs con­


    OCR Scan     		PDF AN915 AN915/D AN915/D tektronix type 576 curve tracer tektronix 576 curve tracer Tracer 176 MR756 2n4401 die DIODO 4001 real time application of ASTABLE mode AN915 MOTOROLA line frequency diode AN915

    diode D45C

    Abstract: JE 800 transistor L146 IC BD800
    Text: STYLE 1: PIN 1. BASE 2. COLLECTOR CASE 340B-03 R e s is tiv e S w itc h in g Ic C o n t Am ps V C E O s u s V o lts M ax M in 8 500 700 f*FE M in /M a x @ lc |XS tf ps Amp M ax M ax M JF16006A 5 min 8 2.5 0.25 5 B U 1008A F 3 min 3 min 4.5 4.5 8* 8* 0.5*


    OCR Scan     		PDF 340B-03 JF16006A JF10012# 100/12k JF16212* JF16018* JF16206 D44VH10 D45VH diode D45C JE 800 transistor L146 IC BD800