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    2N5912 JFET Search Results

    2N5912 JFET Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    LT8393JFE#TRPBF Analog Devices 60VIN, 100VOUT Sync Buck-Boost Visit Analog Devices Buy
    LT8392JFE#TRPBF Analog Devices 60V Sync 4-Switch Buck-Boost L Visit Analog Devices Buy
    LT3967JFE#TRPBF Analog Devices 1.3A 8-Switch Mtrx LED Dimmer Visit Analog Devices Buy
    LT8390JFE#TRPBF Analog Devices 60V Sync 4-Switch Buck-Boost C Visit Analog Devices Buy
    AD8510ARZ-REEL Analog Devices PRECISION LOW NOISE JFET AMPLI Visit Analog Devices Buy
    AD8512ARZ-REEL Analog Devices PRECISION LOW NOISE JFET AMPLI Visit Analog Devices Buy
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    2N5912 JFET Price and Stock

    National Semiconductor Corporation 2N5912

    Trans JFET N-CH 7-Pin TO-78
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 2N5912 67
    • 1 $36.9
    • 10 $36.9
    • 100 $8.29
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    2N5912 JFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N5912

    Abstract: Siliconix 2N5912 2N5912 jfet
    Text: 2N5912 MONOLITHIC DUAL N-CHANNEL JFET Linear Systems replaces discontinued Siliconix & National 2N5912 FEATURES Improved Direct Replacement for SILICONIX & NATIONAL 2N5912 LOW NOISE 10KHz en~ 4nV/√Hz HIGH TRANSCONDUCTANCE (100MHz)


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    PDF 2N5912 2N5912 2N5912. 10KHz) Siliconix 2N5912 2N5912 jfet

    A561 transistor

    Abstract: transistor a561 2N5911 2N5912 AN102 2N5912 jfet
    Text: 2N5911/5912 Siliconix Matched NĆChannel JFET Pairs Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) jVGS1 - VGS2j Max (mV) 2N5911 -1 to -5 -25 5 -1 10 2N5912 -1 to -5 -25 5 -1 15 2N5912, For applications information see AN102, page 6.


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    PDF 2N5911/5912 2N5911 2N5912 2N5912, AN102, P-37407--Rev. A561 transistor transistor a561 2N5911 2N5912 AN102 2N5912 jfet

    2N5911

    Abstract: matched pair JFET Siliconix AN102 Siliconix JFET Pairs Siliconix N-Channel JFET 2N5912 AN102
    Text: 2N5911/5912 Matched N-Channel JFET Pairs Product Summary gfs Min mS IG Typ (pA) jVGS1 – VGS2j Max (mV) Part Number VGS(off) (V) V(BR)GSS Min (V) 2N5911 –1 to -5 –25 5 –1 10 2N5912 –1 to -5 –25 5 –1 15 2N5912, For applications information see AN102, page 1.


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    PDF 2N5911/5912 2N5911 2N5912 2N5912, AN102, P-37407--Rev. 04-Jul-94 2N5911 matched pair JFET Siliconix AN102 Siliconix JFET Pairs Siliconix N-Channel JFET 2N5912 AN102

    2N5912

    Abstract: 2N5911 2N5911-12 X2N5912
    Text: Dual N-Channel JFET High Frequency Amplifier CORPORATION 2N5911 / 2N5912 FEATURES ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise specified • Tight Tracking • Low Insertion Loss • Good Matching Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -25V


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    PDF 2N5911 2N5912 -65oC 200oC -55oC 150oC 10sec) 300oC 367mW 500mW 2N5912 2N5911-12 X2N5912

    J201 Replacement

    Abstract: "DUAL N-Channel JFET" 2n4416 transistor die fairchild Dual N-Channel JFET n-channel JFET sot23-6 2n3956 equivalent transistor G1 TRANSISTOR SOT 23 PNP Siliconix "low noise jfet" J507 Replacement LS5912C
    Text: LS5911 LS5912 LS5912C IMPROVED LOW NOISE WIDEBAND MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES Improved Replacement for SILICONIX, FAIRCHILD, & NATIONAL: 2N5911 & 2N5912 LOW NOISE 10kHz en ~ 4nV/√Hz HIGH TRANSCONDUCTANCE (100MHz) gfs ≥ 4000µS


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    PDF LS5911 LS5912 LS5912C 2N5911 2N5912 10kHz) 100MHz) 500mW OT-23 J201 Replacement "DUAL N-Channel JFET" 2n4416 transistor die fairchild Dual N-Channel JFET n-channel JFET sot23-6 2n3956 equivalent transistor G1 TRANSISTOR SOT 23 PNP Siliconix "low noise jfet" J507 Replacement LS5912C

    2N5912

    Abstract: No abstract text available
    Text: LS5912 MONOLITHIC DUAL N-CHANNEL JFET Linear Systems replaces discontinued Siliconix & National 2N5912 FEATURES Improved Direct Replacement for SILICONIX & NATIONAL 2N5912 LOW NOISE 10KHz en~ 4nV/√Hz HIGH TRANSCONDUCTANCE (100MHz)


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    PDF LS5912 2N5912 2N5912. OT-23 10KHz) 100MHum 2N5912

    2N5911

    Abstract: 2N5912 2N5911-12 DS013 X2N5912 2N5912 jfet
    Text: Dual N-Channel JFET High Frequency Amplifier LLC 2N5911 / 2N5912 ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise specified FEATURES • Tight Tracking • Low Insertion Loss • Good Matching Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -25V


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    PDF 2N5911 2N5912 -65oC 200oC -55oC 150oC 10sec) 300oC 367mW 500mW 2N5912 2N5911-12 DS013 X2N5912 2N5912 jfet

    Untitled

    Abstract: No abstract text available
    Text: Dual N-Channel JFET High Frequency Amplifier LLC 2N5911 / 2N5912 FEATURES ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise specified • Tight Tracking • Low Insertion Loss • Good Matching Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -25V


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    PDF 2N5911 2N5912 -65oC 200oC -55oC 150oC 10sec) 300oC 367mW 500mW

    Untitled

    Abstract: No abstract text available
    Text: LS5911 LS5912 LS5912C IMPROVED LOW NOISE WIDEBAND MONOLITHIC DUAL N-CHANNEL JFET FEATURES Improved Replacement for SILICONIX, FAIRCHILD, & NATIONAL: 2N5911 & 2N5912 LOW NOISE 10kHz en ~ 4nV/√Hz gfs ≥ 4000µS HIGH TRANSCONDUCTANCE (100MHz) ABSOLUTE MAXIMUM RATINGS


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    PDF LS5911 LS5912 LS5912C 2N5911 2N5912 10kHz) 100MHz) OT-23 25-year-old,

    2N5911

    Abstract: LS5911 LS5912C n-channel JFET sot23-6 dss2 ls5912 2N5912 S1 SOT-23 "DUAL N-Channel JFET" 6D24
    Text: LS5911 LS5912 LS5912C IMPROVED LOW NOISE WIDEBAND MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES Improved Replacement for SILICONIX, FAIRCHILD, & NATIONAL: 2N5911 & 2N5912 LOW NOISE 10kHz en ~ 4nV/√Hz HIGH TRANSCONDUCTANCE (100MHz) gfs ≥ 4000µS


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    PDF LS5911 LS5912 LS5912C 2N5911 2N5912 10kHz) 100MHz) OT-23 2N5911 LS5912C n-channel JFET sot23-6 dss2 2N5912 S1 SOT-23 "DUAL N-Channel JFET" 6D24

    2N5912

    Abstract: No abstract text available
    Text: LS5912 MONOLITHIC DUAL N-CHANNEL JFET Linear Systems replaces discontinued Siliconix & National 2N5912 FEATURES Improved Direct Replacement for SILICONIX & NATIONAL 2N5912 LOW NOISE 10KHz en~ 4nV/√Hz HIGH TRANSCONDUCTANCE (100MHz)


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    PDF LS5912 2N5912 2N5912. 10KHz) 2N5912

    ls5912

    Abstract: No abstract text available
    Text: LS5912 MONOLITHIC DUAL N-CHANNEL JFET Linear Systems replaces discontinued Siliconix & National 2N5912 FEATURES Improved Direct Replacement for SILICONIX & NATIONAL 2N5912 LOW NOISE 10KHz en~ 4nV/√Hz HIGH TRANSCONDUCTANCE (100MHz)


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    PDF LS5912 2N5912 LS5912. 10KHz)

    Untitled

    Abstract: No abstract text available
    Text: LS5911 LS5912 LS5912C IMPROVED LOW NOISE WIDEBAND MONOLITHIC DUAL N-CHANNEL JFET FEATURES Improved Replacement for SILICONIX, FAIRCHILD, & NATIONAL: 2N5911 & 2N5912 LOW NOISE 10kHz en ~ 4nV/√Hz G1 D1 S1 gfs ≥ 4000µS HIGH TRANSCONDUCTANCE (100MHz) ABSOLUTE MAXIMUM RATINGS


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    PDF LS5911 LS5912 LS5912C 2N5911 2N5912 10kHz) 100MHz) OT-23 25-year-old,

    2N5911

    Abstract: matched pair JFET 2N5912 TO78 package AN102
    Text: 2N5911/5912 Vishay Siliconix Matched N-Channel JFET Pairs PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) jVGS1 – VGS2j Max (mV) 2N5911 –1 to –5 –25 5 –1 10 2N5912 –1 to –5 –25 5 –1 15 FEATURES BENEFITS


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    PDF 2N5911/5912 2N5911 2N5912 S-04031--Rev. 04-Jun-01 2N5911 matched pair JFET 2N5912 TO78 package AN102

    2N5911

    Abstract: U421 2N5912 AN102
    Text: 2N5911/5912 Vishay Siliconix Matched N-Channel JFET Pairs PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) jVGS1 – VGS2j Max (mV) 2N5911 –1 to –5 –25 5 –1 10 2N5912 –1 to –5 –25 5 –1 15 FEATURES BENEFITS


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    PDF 2N5911/5912 2N5911 2N5912 18-Jul-08 2N5911 U421 2N5912 AN102

    2N5911

    Abstract: 2N5912
    Text: 2N5911/5912 Matched N-Channel JFET Pairs Product Summary gfs Min mS IG Typ (pA) jVGS1 – VGS2j Max (mV) Part Number VGS(off) (V) V(BR)GSS Min (V) 2N5911 –1 to -5 –25 5 –1 10 2N5912 –1 to -5 –25 5 –1 15 Features Benefits Applications D D D D


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    PDF 2N5911/5912 2N5911 2N5912 Hig00 P-37407--Rev. 04-Jul-94 2N5911 2N5912

    2N5911

    Abstract: 2N5912
    Text: 2N5911/5912 Matched N-Channel JFET Pairs Product Summary gfs Min mS IG Typ (pA) jVGS1 – VGS2j Max (mV) Part Number VGS(off) (V) V(BR)GSS Min (V) 2N5911 –1 to -5 –25 5 –1 10 2N5912 –1 to -5 –25 5 –1 15 Features Benefits Applications D D D D


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    PDF 2N5911/5912 2N5911 2N5912 P-37407--Rev. 04-Jul-94 2N5911 2N5912

    Siliconix 2N5912

    Abstract: 2N5911 2n5912
    Text: Tem ic — _ 2N5911/5912 Matched N-Channel JFET Pairs Product Summary P a rt N um ber Vg $ oB (V) V(BR)GSS M in (V) gfs M in (mS) Ig iy p (pA) 2N5911 - 1 to - 5 -25 5 -l 10 2N5912 - 1 to -5 -25 5 -l 15 |VGsi - Voszl Max (mV) 2N5912, For applications information seeAN102, page 12-6.


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    PDF 2N5911/5912 2N5911 2N5912 2N5912, seeAN102, P-37407-- P-37407--Rev. Siliconix 2N5912

    Untitled

    Abstract: No abstract text available
    Text: Dual N-Channel JFET High Frequency Amplifier caiooic CORPORATION 2N5911/2N5912 ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise specified FEATURES • Tight Tracking • Low Insertion Loss • Good Matching Gate-Drain or Gate-Source Voltage . -25V


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    PDF 2N5911/2N5912 367mW 500mW 2N5911 2N5912 DDDCH33 300nA,

    2N5911

    Abstract: 2n5912 2N5911-12 X2N5912 2NS912
    Text: Dual N-Channel JFET High Frequency Amplifier CORPORATION 2N5911/2N5912 FEATURES ABSOLUTE MAXIMUM RATINGS T a = 25°C unless otherwise specified • Tight Tracking • Low Insertion Loss • Good Matching Gate-Drain or Gate-Source Voltage . -25V


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    PDF 2N5911 /2N5912 10sec) 367mW 500mW 2N5911 2NS912 300nA, 1A4432S 000CH33 2n5912 2N5911-12 X2N5912 2NS912

    U440

    Abstract: JFET Matched
    Text: NZFD1 DIE N-Channel JFETs C3TSiliconix J L J r incorporated The NZFD1 Die is a JFET matched pair. This two-chip design reduces high-frequency matching. parasitic while The NZFD1 ensuring performance extremely NZFD1CHP* at tight 2N5912 U440 U441 Die features high speed


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    PDF 2N5912 MIL-STD-750C, U440 JFET Matched

    U257

    Abstract: 2N5911-12 2N5912 2N5912CHP U312 U312CHP Siliconix Dual N-Channel JFETs
    Text: • • Performance Curves NZF See Section 5 • BENEFITS • High Gain through 100 MHz gfs > 5000 ¿¿mho • Matching Characteristics Specified • Wideband D ifferential Amplifiers 2N5912 designed fo r H S ilic o n ix 2N5911 matched dual n-channel JFETs


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    PDF

    Dual N-Channel JFET

    Abstract: 2N5912 2N5911 CA2N5911H CA2N5911X CA2N5912H CA2N5912X 2N5912 jfet "DUAL N-Channel JFET"
    Text: CALOGIC CORP EIE D • 1ÖM432S OOGOG? 3 _ Wideband Mafched Dual N-Channel JFETs caloriC CORPORATION r-3hzs Ü 2N5911/2N5912 FEATURES • • • • DESCRIPTION I High Gain through 100 M H z. g 3>5000/imho Low O ffset . 10mV Max.


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    PDF M432S 2N5911/2N5912 CA2N5911 /CA2N5912 Dual N-Channel JFET 2N5912 2N5911 CA2N5911H CA2N5911X CA2N5912H CA2N5912X 2N5912 jfet "DUAL N-Channel JFET"

    2N5912

    Abstract: 2N5911
    Text: WFBW ALPHA a l.W SEMICONDUCTOR 2N5911/2N5912 Excellence in Analog Power Products Wide Band Matched Dual N-Channel JFETs FEATURES APPLICATIONS • • • • • • • • • High Gain Through lOOMhz gfs>5000iranho Low Offset lOmV Max Low Noise N F=ldB Max


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    PDF 2N5911/2N5912 5000iranho 2N5911/2N5912 2N5911 2N5912 2N5912 2N5911