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    2N5398 Datasheets (21)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N5398 InterFET N-Channel silicon junction field-effect transistor Original PDF
    2N5398 InterFET N-Channel Silicon Junction Field-Effect Transistor Original PDF
    2N5398 Calogic N-Channel JFET High Frequency Amplifier Scan PDF
    2N5398 Intersil N-channel JFET. High frequency amplifier. Scan PDF
    2N5398 Intersil Shortform Data Book 1983/4 Short Form PDF
    2N5398 Intersil Data Book 1981 Scan PDF
    2N5398 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N5398 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N5398 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N5398 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N5398 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N5398 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5398 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2N5398 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2N5398 National Semiconductor RF, VHF, UHF Amplifiers Scan PDF
    2N5398 National Semiconductor N-Channel JFETs Scan PDF
    2N5398 National Semiconductor Shortform National Semiconductor Datasheet Short Form PDF
    2N5398 Solitron Devices Low Power FET, RF Amplifiers, N-Channel FETS Scan PDF
    2N5398/D Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2N5398T092 Unknown Shortform Datasheet & Cross References Data Short Form PDF

    2N5398 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N5397

    Abstract: SMP5398 2N5398 SMP5397 1na30
    Text: Databook.fxp 1/13/99 2:09 PM Page B-20 B-20 01/99 2N5397, 2N5398 N-Channel Silicon Junction Field-Effect Transistor ¥ ¥ ¥ ¥ ¥ ¥ Absolute maximum ratings at TA = 25¡C Low-Noise High Power Gain High Transconductance Mixers Oscillators VHF Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage


    Original     		PDF 2N5397, 2N5398 2N5397 SMP5397, SMP5398 2N5397 SMP5398 2N5398 SMP5397 1na30

    2N3819 equivalent

    Abstract: UC734 2N5668 2N5078 2N3822 equivalent 2n5105 2N5485 U1994E DSASW0036854 2N3821
    Text: *BVDgo Case Ciss or Type Style Geometry Max BVgss Number TO (pF) Min (V) 2N3819 72 FN2.5 25 8.0 2N3821 72 FN3.6 50 6.0 2N3822 72 FN3.6 50 6.0 2N3823 72 FN2.5 30 6.0 2N4223 72 FN2.5 30 6.0 2N4224 72 FN2.5 30 6.0 2N4416 72 FN2.5 30 4.0 2N4416A 72 FN2.5 30


    Original     		PDF 2N3819 2N3821 2N3822 2N3823 2N4223 2N4224 2N4416 2N4416A 2N5078 2N5103 2N3819 equivalent UC734 2N5668 2N3822 equivalent 2n5105 2N5485 U1994E DSASW0036854

    TCA780

    Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
    Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP


    Original     		PDF 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP TCA780 TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G

    2N6449

    Abstract: MIXER U350 TR320 2N4861 2N4858A 2n4117 equivalent J231 2N5461 2N6450 CD860 SMP5116
    Text: Databook.fxp 1/13/99 2:09 PM Page B-3 B-3 01/99 2N3821, 2N3822 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ VHF Amplifiers ¥ Small Signal Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current


    Original     		PDF 2N3821, 2N3822 2N3821 2N6449 MIXER U350 TR320 2N4861 2N4858A 2n4117 equivalent J231 2N5461 2N6450 CD860 SMP5116

    transistor F13

    Abstract: transistor j210 2N5397 equivalent 2N5397 2N5398 J210 J211 J212
    Text: Databook.fxp 1/13/99 2:09 PM Page F-12 F-12 01/99 NJ26L Process Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifier G Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts


    Original     		PDF NJ26L 2N5397, 2N5398 30ion transistor F13 transistor j210 2N5397 equivalent 2N5397 2N5398 J210 J211 J212

    2N5396

    Abstract: 2n5397
    Text: 9-97 B 20 2N5397, 2N5398 N -C H A N N E L S IL IC O N J U N C T IO N FIELD-EFFECT T R A N SIST O R LOW NOISE HIGH POWER GAIN HIGH TRANSCONDUCTANCE MIXERS OSCILLATORS VHF AMPLIFIERS Absolute maximum ratings at T* * 25"C Reverse Gate Source & Reverse Gate Drain Voltage


    OCR Scan     		PDF 2N5397, 2N5398 2N5397 000074G 2N5396 2n5397

    Untitled

    Abstract: No abstract text available
    Text: TYPE 2N5398 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR B U L L E T IN N O . D L -S 7 1 1 1 4 2 5 , A U G U S T 1971 FOR V H F A M P L IF IE R A N D M IX E R A PPLICATIO N S • High Transconductance . . . 5000 ¿¿mho Min at 450 M Hz • Low Crss . . . 1.3 pF Max


    OCR Scan     		PDF 2N5398

    2N5397

    Abstract: 2NS397 2N5398
    Text: C A L OG I C 4ÖE CORP D 1Ô44322 G0 GG3 E 4 S mCGC N-Channel JFET High Frequency Amplifier CORPORATION V 2N5397 / 2N5398 calotfic • T-3>\-zS 2N5397/2N5398 FEATURES ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise noted • Gps = 15dB Minimum (Common Gate) at 450MHz


    OCR Scan     		PDF 2N5397 2N5398 2N5397/2N5398 450MHz 2NS397 450MHz 2N5398

    2N5397

    Abstract: 2N5398 X2N5397 X2N5398
    Text: CALOGI C CORP 4ÖE D 1 ÔH4 3 S2 GGGG3E4 S mCGC N-Channel JFET High Frequency Amplifier CORPORATION ' * _ 2N5397 / 2N5398 /<m Ia#i^î/< C Q IO O IC • T-^2N5397/2N5398 FEATURES ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise noted • Gps = 15dB Minimum (Comm on Gate) at 450MHz


    OCR Scan     		PDF H4352 GG00324 2N5397/2N5398 450MHz 10sec) 300mW 2NS397 2N5398 2N5397 2N5398 X2N5397 X2N5398

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    n-channel fet to-92

    Abstract: 2N4117A fet j310 2N5464 j310 fet 2N5485 FET J202 2N4119 FET 2N5459 2n4117 jan
    Text: 1. DISCRETES Amplifiers— Junction FET Ordering Information Preferred Part Number Bis min Package n mho •g s s Vp m ín/m ax ta s s m in/max mA V max BVq s s min max Crss max n max pA V pF PF n v / s /líz" 4 C |SS N -c h a n n e l: 2N3684 TO-72 2N3685


    OCR Scan     		PDF 2N3684 2N3685 2N3686 2N3687 T0-72 2N3821 2N3822 2N3823 n-channel fet to-92 2N4117A fet j310 2N5464 j310 fet 2N5485 FET J202 2N4119 FET 2N5459 2n4117 jan

    2n5105

    Abstract: 2N5245 2N5485 2N5670 pin 2N3819 2N3821 2N3822 2N3823 2N4223 2N4224
    Text: /ÄYM,© 1 ^©[nlÄMKlIlIL [FITP L O W P O W E R F IE L D E F F E C T T R A N S I S T O R S Case Type Style Humber (TO- Geometry 2N3819 72 2N3821» 72 2N3822» 72 2N3823« 72 2N4223 72 2N4224 72 72 2N4416 2N4416A 72 2N5078 72 2N5103 72 2N5104 72 72 2N5105


    OCR Scan     		PDF 2N3819 2N3821* 2N3822Â 2N3823Â 2N4223 2N4224 2N4416 2N4416A 2N5078 2n5105 2N5245 2N5485 2N5670 pin 2N3821 2N3822 2N3823

    Untitled

    Abstract: No abstract text available
    Text: N-CH ANNEL JU N C TIO N FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS . 021“ 0.533mm It is advisable that: a) the die be eutectically mounted with gold silicon prelonn 98/2%.


    OCR Scan     		PDF 533mm) 0254mm) flb02 D0D41G3

    Untitled

    Abstract: No abstract text available
    Text: SPRAGUE/SEMICOND 8514019 SPRAGUE. GROUP T3 D • f i S 1 3 ôSQ SEMICONDS/ ICS 93D GG 0 3 b l S 03615 b ■ j METAL-CASE JUNCTION FIELD-EFFECT TRANSISTORS Switches ELECTRIC/IL CHARACTERISTICS at TA = 25°C ^6S 0ff) Limits Ig s s V(BR)6SS Max. (V) -3 0 _ -8 .0


    OCR Scan     		PDF 2N4393 2N4856 2N4856A 2N4857 2N3824

    2N5911

    Abstract: Junction-FET 2N5397 2N5398 2N5912 U257 FS3D
    Text: -Ælitron [F> ®®[yj Tr N -C H A N N E L J U N C T IO N FET Devices. Inc. CHIP NUMBER IN CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS . Hr (0.533mm It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%.


    OCR Scan     		PDF 533mm) 0254mm) 2N5911 Junction-FET 2N5397 2N5398 2N5912 U257 FS3D

    Untitled

    Abstract: No abstract text available
    Text: ALLEGRO MICROSYSTEMS INC 85 14019 SPRAGUE. =13 D □SGM33Ô SEM ICO ND S/ IC S D003bl5 5 IALGR 93D 03615 j METAL-CASE JUNCTION FIELD-EFFECT TRA N SISTO R S N-Channel JFETs Switches ELECTRICAL CHARACTERISTICS at TA = 25°C loss V g S o!I) V(BR)G SS Device


    OCR Scan     		PDF SGM33Ã D003bl5 2N3824 2N3966 2N3970 2N3971 2N3972 2N4091 2N4092 2N4093

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


    OCR Scan     		PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680

    2N5397

    Abstract: 2N5398
    Text: E SOLI » □1 S T AT E D Ey3fl75aa]i cm:Lcm3 5 | 01E 3875081 G E SOLID STATE 10993 T - J / - * 2-T D N-Channel JF E T High Frequency Amplifier FEATURES ABSOLUTE MAXIMUM RATINGS • G ps= 15dB Minimum Com mon Gate at 450MHz • L ow N oise • L ow Capacitance


    OCR Scan     		PDF 3fl75Dfll 2N5397, 2N5398 450MHz 10sec) 300mW 2N5397 2N5398

    IN5314

    Abstract: IN5309 IN5286 2N5163 2NB906 IN5313 U1897E 2N3456 UC4250 in5297
    Text: 95D 02926 8368602 SOLITRON DEVICES INC SOLITRON DEVICES INC "ts f - z- f de I " a a tf tto a ooos^ab ~ Devices, Inc L O W P O W E R F IE L D E F F E C T T R A N S I S T O R S Type N um ber C ase Style TO- Avol Min V/mV lb Max (nA) Ios. Max (nA) Vos Max (mV)


    OCR Scan     		PDF UC4250* UC42500 MIL-STD-883C, 19S00/ 2N7109* SDF8200 FMN35 SDF8201Â FMNZ35 SDF8202 IN5314 IN5309 IN5286 2N5163 2NB906 IN5313 U1897E 2N3456 UC4250 in5297

    2NB906

    Abstract: IN5313 2NB90 IN5286 IN5296 solitrondevices IN5302 in5287 IN5306 2N5902 TO-92
    Text: 8 3 6 8 6 0 2 SO L ITRON D E V I C E S INC T - 2- 95D 0 2 9 2 6 S0LITR0N DEVICES INC D F Jfl3 b ö t,G 2 2.jr OOOSTEb M o [ M i r ©ÄTTÄ[L ( L O W P O W E R FIELD EFFECT T R A N S IS T O R S Devices, Inc © [P U C W O O lM tL Type Number Case Style


    OCR Scan     		PDF UC4250» UC4250C» MIL-STD-883C, 2N2609 2N3821 2N3822 2N3823 2N4856 2N4857 2N48S8 2NB906 IN5313 2NB90 IN5286 IN5296 solitrondevices IN5302 in5287 IN5306 2N5902 TO-92

    Untitled

    Abstract: No abstract text available
    Text: "H INTER F E T CORP DE I 4fl21.ßflñ DOOOQflfl 5 METAL-CASE JUNCTION FIELD-EFFECT TRANSISTORS ’ v.; ">r ELECTRICAL CHARACTERISTICS al TA = 25°C ? ' V BRJGSS limits less @Vgs (V Min. (V) Max. (V) 2N3824 -50 -1.0 -0.1 -30 -30 -1.0 -0.1 -20 2N3966 2N3970


    OCR Scan     		PDF 2N3824 2N3966 2N3970 2N3971 2N3972 2N4091 2N4092 2N4093 2N4391 2N4392

    Untitled

    Abstract: No abstract text available
    Text: INTER F E T CORP 2bE D • MÖZbflßö OGOGlö^ Q ■ T-'q -(fO A3 N-Channel JFETs Switches ELECTRICAL CHARACTERISTICS at TA = 25°C 'os; V G Siom VfBmcss Device Type Limits Ig s s Conditions ISV«* (V Min (V) M u. (V) - 0 .1 - 0 .1 -0 3 - 0 .3 - 0 .3 -30


    OCR Scan     		PDF 2N3824 2N3966 2N3970 2N3971 2N3972 2N4091 2N4092 2N4093 2N4391 2N4392

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF 3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007

    siliconix fet

    Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
    Text: s S ilic o n ix FET Design Catalog 1979 Siliconix incorporated Printed in U.S.A. Siliconix incorporated reserves the right to make changes in the circuitry or specifications in this book at any time w ithout notice. Siliconix incorporated assumes no responsibility


    OCR Scan     		PDF J-23548 K24123 i39-40i NZ3766 53-C-03 siliconix fet Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10