2N5179
Abstract: No abstract text available
Text: 2N5179 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N5179 Availability Online Store
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2N5179
2N5179
STV3208
LM3909N
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2N5179
Abstract: schematic diagram dc converter 72 v to 12 v 714PS
Text: 2N5179 VHF/UHF AMPLIFIER DESCRIPTION The 2N5179 is a silicon planar epitaxial NPN transistor in Jedec TO-72 metal case, intended for lownoise tuned-amplifier and converter applications up to 500 MHz. TO-72 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS
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2N5179
2N5179
schematic diagram dc converter 72 v to 12 v
714PS
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Untitled
Abstract: No abstract text available
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTOR 2N5179 TO-72 Low Noise Tuned Amplifiers. ABSOLUTE MAXIMUM RATINGS DESCRIPTION
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2N5179
C-120
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2N5179
Abstract: No abstract text available
Text: , Dna. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2N5179 TO-72 NPN SILICON PLANAR TRANSISTOR Low Noise Tuned Amplifiers. ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE VCBO Collector -Base Voltage
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2N5179
12DEG
48DEG
325gm/1Kpcs
32kgs
2N5179
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transistor 2N5179
Abstract: 2N5179
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N5179 TO-72 Low Noise Tuned Amplifiers. ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE VCBO 20 Collector -Base Voltage VCEO 12 Collector -Emitter Voltage
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ISO/TS16949
2N5179
C-120
transistor 2N5179
2N5179
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2N5179
Abstract: D 431
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTOR 2N5179 TO-72 Boca Semiconductor Corp BSC Low Noise Tuned Amplifiers. ABSOLUTE MAXIMUM RATINGS
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2N5179
C-120
2N5179
D 431
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npn UHF transistor 2N5179
Abstract: No abstract text available
Text: 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB max @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc 2 • 1 Characterized with S-Parameters
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2N5179
npn UHF transistor 2N5179
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Untitled
Abstract: No abstract text available
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB (max) @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10
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2N5179
2N5179
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2N5179
Abstract: npn UHF transistor 2N5179 rf power amplifier transistor with s-parameters
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB (max) @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10
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2N5179
2N5179
npn UHF transistor 2N5179
rf power amplifier transistor with s-parameters
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2N5179
Abstract: ic 741 datasheet pdf of 741 ic IC 741 MSC1305 transistor 2N5179 datasheet of ic 741 ic 741 equivalent uA 741 IC data sheet npn UHF transistor 2N5179
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB (max) @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc
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2N5179
MSC1305
2N5179
ic 741 datasheet
pdf of 741 ic
IC 741
transistor 2N5179
datasheet of ic 741
ic 741 equivalent
uA 741 IC data sheet
npn UHF transistor 2N5179
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2N5179
Abstract: transistor 2N5179 pdf of 741 ic 420 NPN Silicon RF Transistor npn UHF transistor 2N5179
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB (max) @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc
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2N5179
2N5179
transistor 2N5179
pdf of 741 ic
420 NPN Silicon RF Transistor
npn UHF transistor 2N5179
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Untitled
Abstract: No abstract text available
Text: 2N5179 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)12 V(BR)CBO (V)20 I(C) Max. (A)50m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175þ I(CBO) Max. (A)20nØ @V(CBO) (V) (Test Condition)
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2N5179
Freq900M
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RCA-2N5179
Abstract: 2n5179 equivalent TA7319 2N5179 solid state 2n5179 2n5179 rca npn UHF transistor 2N5179 2N517 TIC 2460 rca transistor
Text: File No. 288 RF Power Tran sisto rs Solid State Division 2N5179 RCA-2N5179* is a double-diffused epitaxial planar transistor of the silicon n-p-n type. It is extremely useful in low-noise tuned-amplifier and converter applications at UHF frequencies, and as
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2N5179
RCA-2N5179*
2N5179
TA7319.
482mm)
RCA-2N5179
2n5179 equivalent
TA7319
solid state 2n5179
2n5179 rca
npn UHF transistor 2N5179
2N517
TIC 2460
rca transistor
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2n5179
Abstract: t-31-21 MMBT5179
Text: 2N5179/PN5179/MMBT5179 p - NATL SEMICOND DISCRETE - H E D | bS011i30 National _ Semiconductor PN5179 2N5179 Q[]372Mfl fl | T-3/-2I MMBT5179 TL/G/10100-5 NPN RF Transistor Electrical Characteristics T a = 25°C unless otherwise noted Min P aram eter Sym b o l
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2N5179
TL/Q/10100-12
D037EMÃ
MMBT5179
TL/G/10100-5
TL/Q/10100-1
bsail30
T-31-21
2n5179
t-31-21
MMBT5179
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2n5179 motorola
Abstract: MMBR5179
Text: 1EE D I I MOTOROLA SC XSTRS/R T - 3 i- n F MOTOROLA S E M IC O N D U C T O R h h h b TECHNICAL DATA The RF Line MMBR5179 Die Source S am e as 2N5179 NPN Silicon High Frequency Transistor . . . designed for small-signal amplification at frequencies to 500 MHz. Specif
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MMBR5179
2N5179
2n5179 motorola
MMBR5179
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TCA 875
Abstract: 2n5179
Text: SGS-THOMSON RülDOæilLICTiOiDeS 2N 5179 VHF/UHF AMPLIFIER D E S C R IP T IO N The 2N5179 is a silicon planar epitaxial NPN tran sistor in Jedec TO-72 metal case, intended for lownoisetuned-amplifier and converter applications up to 500 MHz. IN T E R N A L S C H E M A T IC D IA G R A M
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2N5179
2N5179
TCA 875
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MMBR5179L
Abstract: 2n5179 gs noise
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBR5179L The RF Line Die S ource S am e as 2N5179 NPN Silicon High Frequency Transistor . . . designed fo r sm alt-sig n a l a m p lific a tio n at fre q u en cies to 500 MHz. S p e cif ically packaged fo r use in th ick and th in -film circuits using surface m o u n t
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MMBR5179L
2N5179
MMBR5179L
2n5179 gs noise
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marking 25b sot23
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F 4bE D b3b72SM 0Cm 25b no Tb b MOTOROLA •l SEM ICONDUCTOR TECHNICAL DATA The RF Line MMBR5179L Die S ource S am e as 2N5179 NPN Silicon High Frequency Transistor . . . d e s ig n e d fo r sm a ll-sig n a l a m p lifica tio n at fre q u e n cie s to 500 M H z. S p e c if
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b3b72SM
MMBR5179L
2N5179
marking 25b sot23
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D0312
Abstract: HA20 T3115
Text: 3QE D • o o a i s s 6 7 m s f Z 7 S G S -T H O M S O N “ 7# [f [L IO T s« S T T 2 N5179 S-THOMSON VHF/UHF AMPLIFIER DESC RIPTIO N The 2N5179 Is a silicon planar epitaxial NPN tran sistor in Jedec TO-72 metal case, intended for lownoise tuned-amplifier and converter applications up
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N5179
2N5179
D0312
HA20
T3115
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schematic diagram dc converter 72 v to 12 v
Abstract: M 500 ma, 250 V 2N5179
Text: 3QE P • T'ìe'ìsa? Q O a i S S 6 7 S C S -T H O M S O N t^D g[H](s)iQ3i(Sir[R] [M10 i m — ■ ' 2N 5179 S G S-THOMSON VHF/UHF AMPLIFIER DESC RIPTIO N The 2N5179 Is a silicon planar epitaxial NPN tran sistor in Jedec TO-72 metal case, intended for lownoise tuned-amplifier and converter applications up
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2N5179
2N5179
schematic diagram dc converter 72 v to 12 v
M 500 ma, 250 V
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2N517
Abstract: 2N5179
Text: 3QE P • T'ìe'ìsa? Q O a i S S 6 7 S C S -T H O M S O N t^D g[H](s)iQ3i(Sir[R] [M10 i m — ■ ' 2N 5179 S G S-THOMSON VHF/UHF AMPLIFIER DESC RIPTIO N The 2N5179 Is a silicon planar epitaxial NPN tran sistor in Jedec TO-72 metal case, intended for lownoise tuned-amplifier and converter applications up
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2N5179
2N5179
Q03153
2N517
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MOTOROLA 2N5179
Abstract: 2N5179 motorola 2n5179
Text: MOTOROLA SC XSTRS/R F 4bE b3 b 7 2 S 4 OGT HÜT b 4 • MOTb D MOTOROLA “T=3l-lS ■ SEMICONDUCTOR i TECHNICAL DATA 2N5179 The RF Line 4.5 dB @200 MHz HIGH FR E Q U E N C Y TR A N S IS TO R NPN SILIC O N NPN S ILIC O N R F HIGH F R E Q U E N C Y TR A N S IS TO R
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2N5179
MOTOROLA 2N5179
2N5179 motorola
2n5179
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2N3866 MOTOROLA
Abstract: 2N3866 MOTOROLA s parameters 2n5179 10 GHz PNP transistor npn UHF transistor 2N5179 2N2857 MOTOROLA MOTOROLA 2N5179 2n2857 RF POWER TRANSISTOR NPN, motorola 2n4957
Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro
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17A-01
05A-01
2N5829
2N5031
MRF904
MRF571
RF572/M
RF2369
2N3866 MOTOROLA
2N3866 MOTOROLA s parameters
2n5179
10 GHz PNP transistor
npn UHF transistor 2N5179
2N2857 MOTOROLA
MOTOROLA 2N5179
2n2857
RF POWER TRANSISTOR NPN, motorola
2n4957
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2N5179
Abstract: high gain PNP RF TRANSISTOR 2N4957 2N2857 2N3866 MOTOROLA 2N2857 MOTOROLA MOTOROLA 2N5179 motorola european master selection 2n4958 Y parameters of transistors
Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro
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17A-01
05A-01
Gain-200
MRF502
BFX89
BFY90
2N5179
2N2857
MRF904
MRF914
high gain PNP RF TRANSISTOR
2N4957
2N3866 MOTOROLA
2N2857 MOTOROLA
MOTOROLA 2N5179
motorola european master selection
2n4958
Y parameters of transistors
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