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    2N5096 Search Results

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    2N5096 Price and Stock

    New England Semiconductor 2N5096

    POWER BIPOLAR TRANSISTOR, 1A I(C), 500V V(BR)CEO, 1-ELEMENT, PNP, SILICON, METAL, 3 PIN
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    Quest Components 2N5096 9
    • 1 $66.6306
    • 10 $59.9675
    • 100 $59.9675
    • 1000 $59.9675
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    GTCAP 2N5096

    POWER BIPOLAR TRANSISTOR, 1A I(C), 500V V(BR)CEO, 1-ELEMENT, PNP, SILICON, METAL, 3 PIN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N5096 5
    • 1 $79.9568
    • 10 $75.959
    • 100 $75.959
    • 1000 $75.959
    • 10000 $75.959
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    NEW COMPONENTS 2N5096

    POWER BIPOLAR TRANSISTOR, 1A I(C), 500V V(BR)CEO, 1-ELEMENT, PNP, SILICON, METAL, 3 PIN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N5096 1
    • 1 $66.6306
    • 10 $66.6306
    • 100 $66.6306
    • 1000 $66.6306
    • 10000 $66.6306
    		Buy Now

    Microchip Technology Inc 2N5096

    MS 2N5096
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ES Components 2N5096 90
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    2N5096 Datasheets (26)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N5096 Semelab High Voltage PNP Transistor Original PDF
    2N5096 Diode Transistor Transistor Short Form Data Scan PDF
    2N5096 General Diode Silicon Power Transistors Scan PDF
    2N5096 General Transistor Power Transistor Selection Guide Scan PDF
    2N5096 High Voltage Semi-Conductor Specialists Silicon PNP Power Transistors Scan PDF
    2N5096 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N5096 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N5096 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N5096 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5096 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N5096 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N5096 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N5096 New England Semiconductor Transistor Selection Guide Scan PDF
    2N5096 New England Semiconductor BIPOLAR PNP TRANSISTOR TO-39 TO-5 Scan PDF
    2N5096 New England Semiconductor NPN TO-39 / TO-5 Transistor Scan PDF
    2N5096 New England Semiconductor BIPOLAR PNP TRANSISTOR TO-39 / TO-5 Scan PDF
    2N5096 PPC Products Transistor Short Form Data Scan PDF
    2N5096 Semiconductor Technology High Voltage Silicon Low and Medium Power Transistors Scan PDF
    2N5096 Semiconductor Technology High Voltage Silicon Low and Medium Power Transistors Scan PDF
    2N5096 Solid State 500 V, 1 A high voltage PNP transistor Scan PDF

    2N5096 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N5096 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 450V 0.41 (0.016)


    Original     		2N5096 O205AD) 1-Aug-02 PDF

    transistor c 4058

    Abstract: pnp 500v TO-205AA ic 4058 DATASHEET ic 4058 2N5096 C 4058
    Text: 2N5096 MECHANICAL DATA Dimensions in mm inches HIGH VOLTAGE PNP TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 38.00 (1.5) min. FEATURES 0.89 max. (0.035) • LOW SATURATION VOLTAGE 0.41 (0.016) 0.53 (0.021) dia. • LOW LEAKAGE AT HIGH TEMPERATURE


    Original     		2N5096 O-205AA) 100mA transistor c 4058 pnp 500v TO-205AA ic 4058 DATASHEET ic 4058 2N5096 C 4058 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N5096 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 450V 0.41 (0.016)


    Original     		2N5096 O205AD) 19-Jun-02 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N5096 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)450 V(BR)CBO (V)500 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)175’ I(CBO) Max. (A)500nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		2N5096 Freq20M PDF

    Untitled

    Abstract: No abstract text available
    Text: tJ zSsmi-Conauatoi ZPioaucti, Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N5096 HIGH VOLTAGE PNP TRANSISTOR 1 5s- 11 SEATINQ PLJWE FEATURES • LOW SATURATION VOLTAGE • LOW LEAKAGE AT HIGH TEMPERATURE


    Original     		2N5096 100mA PDF

    2n5096

    Abstract: No abstract text available
    Text: 2N5096 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 450V 0.41 (0.016)


    Original     		2N5096 O205AD) 17-Jul-02 2n5096 PDF

    SMD transistor 562

    Abstract: 562 SMD, 6 pin 562 smd ic 2N5094 2N5096 SFT5094 TO-5 amps pnp transistor
    Text: SFT5094 and SFT5096 Series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 1 AMP, 500 Volts High Voltage PNP Transistor DESIGNER’S DATA SHEET Part Number / Ordering Information 1/


    Original     		SFT5094 SFT5096 SFT5094 200oC SFT5015 TR0081E SMD transistor 562 562 SMD, 6 pin 562 smd ic 2N5094 2N5096 TO-5 amps pnp transistor PDF

    10 35 DIODE

    Abstract: BFT19B diode 15 35
    Text: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 2N5282 STIP30 STIP305 TRSP3743 2N5345 MJE5730 MJE5730 MJE5730 g~~~~ 25 30 BST16 MJ5416 MJ5416 MM5416 MM5416 MM5416 ST5416 2N5416 +RSP5~~6 35 40 TRSP3006 TRSP30X TRSP30X TRSP30X5 TRSP30X5 TRLP3504 TRLP3504


    Original     		37var 220AB 10 35 DIODE BFT19B diode 15 35 PDF

    pnp 50 VOLTS 5 amp smd TRANSISTOR

    Abstract: 2N5096 2N5094 transistor smd P.D 1 SFT5094 TO-5 amps pnp transistor
    Text: SFT5094 and SFT5096 Series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 1 AMP, 500 Volts High Voltage PNP Transistor DESIGNER’S DATA SHEET Part Number / Ordering Information 1/


    Original     		SFT5094 SFT5096 SFT5094 200oC SFT5015 TR0081C pnp 50 VOLTS 5 amp smd TRANSISTOR 2N5096 2N5094 transistor smd P.D 1 TO-5 amps pnp transistor PDF

    L0050A

    Abstract: 2N5096A lt 0210 2N5091A 2N5093A 2N5094A
    Text: HIGH VOLTAGE SILICON DIFFUSED PNP TRANSISTORS TYPES 2N5091A, 2N5093A, 2N5094A 2N5096A Solid State Devices Incorporated 14 830 Valley V iew Avenue La Mirada, California 9 0 638 Telephone 213 9 2 1 -9 6 6 0 TW X -910-583-4807 Z


    OCR Scan     		TWX-910-583-4807 2N5091A, 2N5093A, 2N5094A 2N5096A 50mAdc 25mAdc, 150Vdc 100mAde, L0050A 2N5096A lt 0210 2N5091A 2N5093A 2N5094A PDF

    ic 23721

    Abstract: 23732 23721
    Text: Micmsemi PNP Transistors | Part Number ' PNP JANTXV2N3763 JANTXV2N3763L 2N4126 2N3906 2N4403 PN2907A 2N5401 2N2907A 2NS091 2NS093 2N5094 2N5096 2N3053 2N3774 2N3778 2N3245 2N3775 2N3779 2N3776 2N3780 2N3777 2N3781 2N3660 2N3661 2N3782 2N3719 2N3867 2N3867S


    OCR Scan     		JANTXV2N3763 JANTXV2N3763L 2N4126 2N3906 2N4403 PN2907A 2N5401 2N2907A 2NS091 2NS093 ic 23721 23732 23721 PDF

    PNP TO-39

    Abstract: 2N6191
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-39/TO-5 pr D* ix 1.3@2.5/.25 6 60 >20@2.5/3 1.3@2.5/.25 6 60 1 20-200@. 1/15 3@.025/.0025 4 10* 350 1 20-200@.l/15 3@.025/.0025 4 10‘ 2N5094 400 1 20-200@.l/15 3@.025/.0025 4 10' 2N5096 450 1 20-200@.l/15


    OCR Scan     		O-39/TO-5 2N3867A 2N3868A 2N5091 2N5093 2N5094 2N5096 2N5149 2N5151 2N5153 PNP TO-39 2N6191 PDF

    2N5094

    Abstract: 2N5091 2N5096 2N5093 C178T Transistor 2N5093 2N5095 2N5097
    Text: ÿ o & m l 2N5094 AND 2N5096 £ £ I D I I s)s>U»'ll 1 AMP HIGH VOLTAGE PNP TRANSISTOR 450-500 VOLTS 14830 Valley View Avenue La Mirada. Calitornia 90638 TW X 910-583-4807 FAX 213-921-2396 CASE STYLE W JEDECTO—5 FEATURES • BVCBO TO 500 V O LTS • LOW SATURATION VOLTAGE


    OCR Scan     		2N5094 2N5096 2N5095 2N5097 2N5091 2N5093 C178T Transistor 2N5093 2N5097 PDF

    E50U

    Abstract: No abstract text available
    Text: SOLI» STATE DEVICES INC 15E D Jù3t.bDll □ □ □ S U D □ | 2N5094 AND 2N5096 1 AMP HIGH VOLTAGE PNP TRANSISTOR 4 5 0 -5 0 0 VOLTS CASE STYLE W JEDECTO—5 14830 Valley View Avenue La Mirada, California 90638 213 921-9660 TW X 910-583-4807 FAX 213-921-2396


    OCR Scan     		2N5094 2N5096 E50U PDF

    PDTC

    Abstract: 2N5282 2N3795 2N3868 2N4999 2N5001 2N5005 2N5281 2N5333 SFT5333
    Text: PNP TRANSISTORS h F E @ 1C Device Type V C E O sus Volts Min 1 120 150 2N3795 2N5281 80 2N4999 2 25 SFT5333 2N3868 50 20 1.0 2.0 2.5 60 2.5 2.5 60 70 30 30 15 15 50 50 100 100 6 50 25 50 50 50 TO-59 TO-59 TO-5 TO-5 TO-5 2N5003 30 2N5005 2M6190 70 30 2.0


    OCR Scan     		2N3795 2N5281 2N4999 T0-59 2N5001 2N5333 SFT5333 2N3868 2M5003 PDTC 2N5282 2N5005 PDF

    2N5415

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-39/TO-5 PACKAGE PNP TO-39 PNP TO-5 tr 1 V ceo Ic hFE@ V VcE VcE sat (sus) VOLTS (max) AMPS (min/max @ A/V) @ IC/IB (V @ A/A) 2N3867 40 3 >25@2.5/3 2N3868 60 3 2N4930 200 2N4931 p * rD Ìt WATTS (MHz) 1.3@2.5/.25


    OCR Scan     		O-39/TO-5 2N3867 2N3868 2N4930 2N4931 2N5094 2N5149 2N5153 2N5415 PDF

    2N3743

    Abstract: 2N4930 2N4931 2N5096 2N5282
    Text: 3869720 G EN ER A L ' O I D D E CORP 07C 0 02 54 GENERAL DIODE CORP 07 D -p-33 - DE | 301^750 DDODSSM Ö | ~ SILICON N P N - Power Transistors rvP E i, M AX . TH ER M AL ;s Junction lo Cáse M AX. C O LL. DI SS. t< net A li 925* C A B S O L U T E M A X . R A T IN G S { » ' C .


    OCR Scan     		-p-33 lcs50MA trm7015 MD-14 trm7505 MO-14 trm8015 TRSP3014S TRSP3504 TRSP3514S 2N3743 2N4930 2N4931 2N5096 2N5282 PDF

    2N4839

    Abstract: TO114 package 2N5860 2N1724A 2N3714 2N3715 2N3716 2N3789 2N3790 2N3792
    Text: GENERAL TRANSISTOR CORP 24E D • 3^SaD01 DODOD^ fi ■ General Transistor Corporation CASE TO-3, TO-39 lc MAX =3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905 T - 3 3 - o i


    OCR Scan     		2N3789 2N3713 2N3790 2N3714 2N3791 2N3715 2N3792 050-H O-107 O-126 2N4839 TO114 package 2N5860 2N1724A 2N3716 PDF

    741 IC

    Abstract: 2N5093 741i IC 741 to 2N5415 2N3868 2N4930 2N4931 2N5091 2N5096
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-39/TO-5 PACKAGE PNP TO-39 PNP TO-5 » I 1 sus VOLTS Ic (max) AMPS 2N3867 40 3 >25@2.5/3 1.3@2.5/.25 6 60 2N3868 60 3 >20@2.5/3 1.3@2.5/.25 6 60 2N4930 200 .05 20-200@.01/10 5@.01/.001 5 10* 2N4931 250 .05


    OCR Scan     		O-39/TO-5 2N3867 2N3868 2N4930 2N4931 2N5091 2N5093 2N5094 2N5096 2N5149 741 IC 741i IC 741 to 2N5415 PDF

    2N5286

    Abstract: 2N4236 2N4387 2N4388 2N4398 2N4399 2N4898 2N4899 2N4900 2N4901
    Text: H P II PNP DEVICE PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST BREiA K D O V VN V OLTAGE S SAT . V O L T A GES M<ax. h F: E CASE V CB VΠV EB (V) 'c (A) M in. Max. (A) 'b (A) V CE (V) V BE (V) 2N4236 TO -5 80 80 7 1 0.25 30 150 0.25 0.125 0.6 2 2N4387


    OCR Scan     		2N4236 2N4387 2N4388 2N4398 2N4399 2N4898 2N4899 2N4900 2N4901 2N4902 2N5286 PDF

    MD14

    Abstract: 2N4069 2N4358 2N4438 2N2726 2N2727 2N2858 2N2859 2N2989 2N2990
    Text: SEM ICO NDUCTO R TECHNOLOGY O SE D I fll3 h 4 5 fl O D D O S l? s £ Jay Sueet SEMICONDUCTOR TECHNOLOGY, INC. HIGH VOLTAGE SILICON LOW AND MEDIUM POWER TRANSISTORS Stuart. Florida 34S37 407 283-4500 • TWX - 5 1 0 -9 5 - W b '• FAX 407-286-891'! MPN & p n p


    OCR Scan     		34S37 510-953-7b' 2N2726 2N2727 2N2858 2N2859 N2988 2N2989 2N5058 N5059 MD14 2N4069 2N4358 2N4438 2N2990 PDF

    1040B

    Abstract: 2N3910 svt6062 2n5100
    Text: =1 TYPE 1015 NPN 1 GEOMETRY PHYSICAL CHARACTERISTICS 1. 2. 3. 4. Chip size. Chip hickness. Top metal. Back metal. 5. Backside. 6. Bonding pad. 2020 PNP 1. 2. 3. 4. Chip size. Chip thickness. Top metal.


    OCR Scan     		1020B 15X19 3kA/10kA/I0kA 3kA/10kA/10kA 2N6674 2N6675 2N6676 2N6677 1040B 2N3910 svt6062 2n5100 PDF

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


    OCR Scan     		11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680 PDF

    2n2222A

    Abstract: pin configuration transistor 2N2222A transistor 2n2222a pnp transistor bipolar 2n2222a NPN transistor 2n2222A
    Text: SÓLI» STATE DEVICES INC 3SE D • Ô3bbüll 00053Ü4 2 * S S I Dual & Quad Bipolar Transistors 25°C Elcctrical Characteristics Per Transistor Configuration ; PolaritylfV - IC: ••A'«' NPN/PNP 0.8/0.6 50/60 Dual Uncommitted Quad NPN Uncommitted 0.8 50


    OCR Scan     		2N2222A/2N2907A) SLC6259-16Q 2N2222A) SFT700D-16Q 2N2222A/2N2907A SFT9596-20D 2N5095/2N5096) SFT3507-20D SFT4353-20D SFT4300/SFT5333) 2n2222A pin configuration transistor 2N2222A transistor 2n2222a pnp transistor bipolar 2n2222a NPN transistor 2n2222A PDF