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    2N4416 TRANSISTOR DIE Search Results

    2N4416 TRANSISTOR DIE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2N4416 TRANSISTOR DIE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LM103 zener

    Abstract: jfet cascode 2N3069 J FET RF Cascode Input 2N3070 FM3954 pierce crystal oscillator 2n4416 jfet HI-FI tone control transistors FM1208
    Text: FET Circuit Applications FET Circuit Applications National Semiconductor Application Note 32 February 1970 Polycarbonate dielectric TL H 6791 – 1 Sample and Hold With Offset Adjustment The 2N4339 JFET was selected because of its low lGSS k100 pA very-low lD(OFF) (k50 pA) and low pinchoff volt-


    Original     		PDF 2N4339 2N4393 2N4393 LM103 zener jfet cascode 2N3069 J FET RF Cascode Input 2N3070 FM3954 pierce crystal oscillator 2n4416 jfet HI-FI tone control transistors FM1208

    2n5485 equivalent transistor

    Abstract: J305 equivalent transistor OF TRANSISTOR 2N5485 2n4416 transistor die DATASHEET OF TRANSISTOR 2N5485 VCR11N 2N5485 j305 2N4416 2N4416A
    Text: Databook.fxp 1/13/99 2:09 PM Page F-8 F-8 01/99 NJ26 Process Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifier G Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA


    Original     		PDF NJ26A 2N4416, 2N4416A 2N5484, 2N5485 2N5486 VCR11N 2n5485 equivalent transistor J305 equivalent transistor OF TRANSISTOR 2N5485 2n4416 transistor die DATASHEET OF TRANSISTOR 2N5485 VCR11N 2N5485 j305 2N4416 2N4416A

    2n4416 transistor die

    Abstract: 2n4416 transistor all transistor databook 2N4416 2N4416A NJ26A
    Text: Databook.fxp 1/13/99 2:09 PM Page F-10 F-10 01/99 NJ26A Process Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifier G Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts


    Original     		PDF NJ26A 2N4416, 2N4416A 2n4416 transistor die 2n4416 transistor all transistor databook 2N4416 2N4416A

    TO72 package n-channel jfet

    Abstract: 2N5019 "direct replacement" 2n4416 transistor spice SST4500 Ultra High Input Impedance N-Channel JFET Amplifier J201 Replacement 2n4416 transistor die n-channel JFET sot23-6 JFET power transistor 2n3956 equivalent transistor
    Text: 2N/SST4416 2N4416A N-CHANNEL JFET HIGH FREQUENCY AMPLIFIER Linear Integrated Systems FEATURES Direct Replacement For SILICONIX 2N/SST4416 & 2N4416A VERY LOW NOISE FIGURE 400 MHz 4 dB (max) EXCEPTIONAL GAIN (400 MHz) 10 dB (min) 1 2N SERIES ABSOLUTE MAXIMUM RATINGS


    Original     		PDF 2N/SST4416 2N4416A 2N/SST4416 2N4416A LS4416 LS4416A 2N4416 300mW OT-23 TO72 package n-channel jfet 2N5019 "direct replacement" 2n4416 transistor spice SST4500 Ultra High Input Impedance N-Channel JFET Amplifier J201 Replacement 2n4416 transistor die n-channel JFET sot23-6 JFET power transistor 2n3956 equivalent transistor

    MRD721

    Abstract: OPA37EJ LF156A OPA606 OPA606KM OPA606KP OPA606LM 2n4416 transistor die JUNG FA 10
    Text: OPA606 Wide-Bandwidth Difet ® OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 13MHz typ ● OPTOELECTRONICS ● HIGH SLEW RATE: 35V/µs typ ● LOW BIAS CURRENT: 10pA max at TA = +25°C ● LOW OFFSET VOLTAGE: 500µV max ● LOW DISTORTION: 0.0035% typ at 10kHz


    Original     		PDF OPA606 13MHz 10kHz OPA606 LF156A OPA37EJ 150pF MRD721 OPA37EJ OPA606KM OPA606KP OPA606LM 2n4416 transistor die JUNG FA 10

    MRD721

    Abstract: OPA606KM riaa preamplifier circuit diagram LF156A OPA606 OPA606KP OPA606LM 2n4416 transistor die 2N4416
    Text: OPA606 Wide-Bandwidth Difet ® OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 13MHz typ ● OPTOELECTRONICS ● HIGH SLEW RATE: 35V/µs typ ● LOW BIAS CURRENT: 10pA max at TA = +25°C ● LOW OFFSET VOLTAGE: 500µV max ● LOW DISTORTION: 0.0035% typ at 10kHz


    Original     		PDF OPA606 13MHz 10kHz OPA606 LF156A OPA37EJ 150pF MRD721 OPA606KM riaa preamplifier circuit diagram OPA606KP OPA606LM 2n4416 transistor die 2N4416

    qd33

    Abstract: qp35 HA-5137A QD60 AN553 HA3-5137A-5 HA-5137 OP06 OP07 OP25
    Text: HA-5137A Data Sheet September 1998 File Number 2908.4 63MHz, Ultra-Low Noise Precision Operational Amplifier Features The HA-5137 operational amplifier features an unparalleled combination of precision DC and wideband high speed characteristics. Utilizing the Intersil Dielectric Isolation


    Original     		PDF HA-5137A 63MHz, HA-5137 63MHz 63MHzoducts qd33 qp35 HA-5137A QD60 AN553 HA3-5137A-5 OP06 OP07 OP25

    HA3-2505-5

    Abstract: HA2505 2N4416 HA-2505 HA-2515 HP5082-2810 a2 2505-5
    Text: HA-2505 Data Sheet 12MHz, High Input Impedance, Operational Amplifier May 1999 • Slew Rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V/µs This dielectrically isolated amplifier is ideally suited for applications such as data acquisition, RF, video, and pulse


    Original     		PDF HA-2505 12MHz, 330ns 12MHz 500kHz HA-2505 HA3-2505-5 HA2505 2N4416 HA-2515 HP5082-2810 a2 2505-5

    LF156A

    Abstract: OPA606 OPA606KM OPA606KP OPA606LM 2n4416 transistor die RIAA preamplifier
    Text: OPA606 Wide-Bandwidth Difet ® OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 13MHz typ ● OPTOELECTRONICS ● HIGH SLEW RATE: 35V/µs typ ● LOW BIAS CURRENT: 10pA max at TA = +25°C ● LOW OFFSET VOLTAGE: 500µV max ● LOW DISTORTION: 0.0035% typ at 10kHz


    Original     		PDF OPA606 13MHz 10kHz OPA606 LF156A OPA606KM OPA606KP OPA606LM 2n4416 transistor die RIAA preamplifier

    OP06

    Abstract: OP07 OP25 OP27 OP37 AN553 HA-5137 HA-5137A HA7-5137A-5
    Text: HA-5137A TM Data Sheet April 2000 File Number 2908.5 63MHz, Ultra-Low Noise Precision Operational Amplifier Features The HA-5137 operational amplifier features an unparalleled combination of precision DC and wideband high speed characteristics. Utilizing the Intersil Dielectric Isolation


    Original     		PDF HA-5137A 63MHz, HA-5137 63MHz 63MHz) 800V/mV) 126dB) OP06 OP07 OP25 OP27 OP37 AN553 HA-5137A HA7-5137A-5

    lmC 470

    Abstract: MRD721 LF156A OPA606 OPA606KM OPA606KP OPA606LM FET 2N4416 PDS-598D
    Text: OPA606 Wide-Bandwidth Difet ® OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 13MHz typ ● OPTOELECTRONICS ● HIGH SLEW RATE: 35V/µs typ ● LOW BIAS CURRENT: 10pA max at TA = +25°C ● LOW OFFSET VOLTAGE: 500µV max ● LOW DISTORTION: 0.0035% typ at 10kHz


    Original     		PDF OPA606 13MHz 10kHz OPA606 LF156A lmC 470 MRD721 OPA606KM OPA606KP OPA606LM FET 2N4416 PDS-598D

    high speed Zener Diode

    Abstract: "Dual PNP Transistor" PAD1 Spice a7 P-CHANNEL LS320 j177 TRANSISTOR "Dual npn Transistor" LS3250 2n5019 ultra low noise
    Text: NC G2 G1 NC NC G2 G1 NC Linear Integrated Systems - Lead Pb Free / RoHS Compliant Parts List MAIN MENU Home Page Page 1 of 3 Linear Integrated Systems Lead-Free / RoHS Fact Sheet Products Support Literature Spice Models Downloads Contact Us Distributors


    Original     		PDF

    HA-2515

    Abstract: HA7-2515-5 HA3-2515-5 HA2515 hp5082-2810 2N4416 2n4416 transistor die
    Text: HA-2515 Data Sheet September 1998 File Number 2893.3 12MHz, High Input Impedance, Operational Amplifier Features HA-2515 is a high performance operational amplifier which sets the standards for maximum slew rate, highest accuracy and widest bandwidths for internally compensated devices.


    Original     		PDF HA-2515 12MHz, HA-2515 250ns HA7-2515-5 HA3-2515-5 HA2515 hp5082-2810 2N4416 2n4416 transistor die

    Untitled

    Abstract: No abstract text available
    Text: OPA606 Wide-Bandwidth Difet ® OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 13MHz typ ● OPTOELECTRONICS ● HIGH SLEW RATE: 35V/µs typ ● LOW BIAS CURRENT: 10pA max at TA = +25°C ● LOW OFFSET VOLTAGE: 500µV max ● LOW DISTORTION: 0.0035% typ at 10kHz


    Original     		PDF OPA606 13MHz 10kHz OPA606 LF156A

    N-Channel jfet 100V depletion

    Abstract: transistor j113 15 A PNP POWER TRANSISTOR P-Channel FET 100v to92 Ultra High Input Impedance N-Channel JFET Amplifier Dual N P-Channel 100V P-Channel JFET Switch
    Text: LS320 HIGH INPUT IMPEDANCE BiFET AMPLIFIER Linear Integrated Systems FEATURES HIGH INPUT IMPEDANCE rGs = 100GΩ HIGH TRANSCONDUCTANCE YFS = 30,000µS ABSOLUTE MAXIMUM RATINGS1 TO-72 BOTTOM VIEW @ 25 °C unless otherwise stated Maximum Temperatures Storage Temperature


    Original     		PDF LS320 200mW N-Channel jfet 100V depletion transistor j113 15 A PNP POWER TRANSISTOR P-Channel FET 100v to92 Ultra High Input Impedance N-Channel JFET Amplifier Dual N P-Channel 100V P-Channel JFET Switch

    diode ZENER A8

    Abstract: P-Channel Depletion Mosfets Siliconix Dual N-Channel JFET bare die zener Bi-Directional N-Channel mosfet Siliconix 2N5912 diode ZENER A8 5400 sd211de spice
    Text: SD5000/5001/5400/5401 QUAD N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED Linear Integrated Systems Product Summary Features Benefits Applications • Quad SPST Switch with Zener Input Protection • Low Interelectrode Capacitance and Leakage • Ultra-High Speed Switching—tON: 1 ns


    Original     		PDF SD5000/5001/5400/5401 SD5000/5400 diode ZENER A8 P-Channel Depletion Mosfets Siliconix Dual N-Channel JFET bare die zener Bi-Directional N-Channel mosfet Siliconix 2N5912 diode ZENER A8 5400 sd211de spice

    ultra low igss pA

    Abstract: ultra low igss pA mosfet n channel
    Text: LS5301, PF5301 VERY HIGH INPUT IMPEDANCE N-CHANNEL JFET Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR LF5301, PF5301, & 2N5301 HIGH INPUT INPEDANCE HIGH GAIN IG = 0.100 pA gfs = 70 µS ABSOLUTE MAXIMUM RATINGS1 @ 25 °C unless otherwise stated


    Original     		PDF LS5301, PF5301 LF5301, PF5301, 2N5301 300mW ultra low igss pA ultra low igss pA mosfet n channel

    intersil jfet

    Abstract: intersil JFET TO 18 U308 DIODE A6 P-channel N-Channel power mosfet ENHANCEMENT 2n3955 transistor spice
    Text: 3N170 3N171 N-CHANNEL MOSFET ENHANCEMENT MODE Linear Integrated Systems FEATURES Direct Replacement for INTERSIL 3N170 & 3N171 LOW DRAIN TO SOURCE RESISTANCE rds on ≤ 200Ω FAST SWITCHING td(on) ≤ 3.0ns TO-72 BOTTOM VIEW 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated)


    Original     		PDF 3N170 3N171 3N170 3N171 300mW intersil jfet intersil JFET TO 18 U308 DIODE A6 P-channel N-Channel power mosfet ENHANCEMENT 2n3955 transistor spice

    2N4351

    Abstract: A6 ZENER DIODE "Dual npn Transistor" J201 spice intersil JFET TO 18 J201 N-channel JFET to 90 intersil JFET JFET NPN AMPLIFIER bare Die mosfet
    Text: 2N4351 N-CHANNEL MOSFET ENHANCEMENT MODE Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR INTERSIL 2N4351 HIGH DRAIN CURRENT ID = 100mA HIGH GAIN TO-72 BOTTOM VIEW gfs = 1000µS 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C unless otherwise stated Maximum Temperatures


    Original     		PDF 2N4351 2N4351 100mA 375mW 100mA A6 ZENER DIODE "Dual npn Transistor" J201 spice intersil JFET TO 18 J201 N-channel JFET to 90 intersil JFET JFET NPN AMPLIFIER bare Die mosfet

    Untitled

    Abstract: No abstract text available
    Text: OPA606 Wide-Bandwidth Difet ® OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 13MHz typ ● OPTOELECTRONICS ● HIGH SLEW RATE: 35V/µs typ ● LOW BIAS CURRENT: 10pA max at TA = +25°C ● LOW OFFSET VOLTAGE: 500µV max ● LOW DISTORTION: 0.0035% typ at 10kHz


    Original     		PDF OPA606 13MHz 10kHz OPA606 LF156A

    ultra low igss pA mosfet

    Abstract: n-channel JFET sot23-6 Ultra High Input Impedance N-Channel JFET Amplifier N channel jfet 3N191 SPICE P-Channel Depletion Mode FET 2n4117 jfet jfet transistor 2n4391 U422 ultra low igss pA mosfet n channel
    Text: LS4117, 4118, 4119 ULTRA-HIGH INPUT IMPEDANCE N-CHANNEL JFET Linear Integrated Systems FEATURES LOW POWER IDSS<90 µA 2N4117 MINIMUM CIRCUIT LOADING IGSS<1 pA (2N4117A Series) ABSOLUTE MAXIMUM RATINGS (NOTE 1) @ 25°C (unless otherwise noted) Gate-Source or Gate-Drain Voltage (NOTE 1)


    Original     		PDF LS4117, 2N4117) 2N4117A 300mW 2N4117/A 2N4118 FN4117/A 2N4118A ultra low igss pA mosfet n-channel JFET sot23-6 Ultra High Input Impedance N-Channel JFET Amplifier N channel jfet 3N191 SPICE P-Channel Depletion Mode FET 2n4117 jfet jfet transistor 2n4391 U422 ultra low igss pA mosfet n channel

    N CHANNEL jfet Low Noise Audio Amplifier

    Abstract: diode ZENER A8 P-Channel Depletion Mosfets SST214 N CHANNEL jfet ultra Low Noise Audio Amplifier 2N4351 bare die zener sd214de ultra FAST DMOS FET Switches sst210 sot-143
    Text: SD-SST210/214 N-CHANNEL LATERAL DMOS SWITCH Linear Integrated Systems Product Summary Part Number V BR DS Min(V) VGS(th) Max (V) rDS(on) Max(Ω) Crss Max (pF) tON Max (ns) SD210DE 30 1.5 45 @ VGS = 10V 0.5 2 SD214DE 20 1.5 45 @ VGS = 10V 0.5 2 SST210 30 1.5


    Original     		PDF SD-SST210/214 SD210DE SD214DE SST210 SST214 N CHANNEL jfet Low Noise Audio Amplifier diode ZENER A8 P-Channel Depletion Mosfets N CHANNEL jfet ultra Low Noise Audio Amplifier 2N4351 bare die zener ultra FAST DMOS FET Switches sst210 sot-143

    riaa preamplifier circuit diagram

    Abstract: LF156A OPA606 OPA606KM OPA606KP OPA606LM riaa
    Text: OPA606 Wide-Bandwidth Difet ® OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 13MHz typ ● OPTOELECTRONICS ● HIGH SLEW RATE: 35V/µs typ ● LOW BIAS CURRENT: 10pA max at TA = +25°C ● LOW OFFSET VOLTAGE: 500µV max ● LOW DISTORTION: 0.0035% typ at 10kHz


    Original     		PDF OPA606 13MHz 10kHz OPA606 LF156A riaa preamplifier circuit diagram OPA606KM OPA606KP OPA606LM riaa

    H2525

    Abstract: HA2-2525-5 ha2520 HA2-2520-2 A2525-5
    Text: HA-2520, HA-2522, 2525 h iA R R is S E M I C O N D U C T O R N o vem b er 1996 20MHz, High Slew Rate, Uncompensated, High Input Impedance, Operational Amplifiers Features Description • High Slew Rate. 120V/ns


    OCR Scan     		PDF HA-2520, HA-2522, 20MHz, 200ns HA-2525 HA-2525 H2525 HA2-2525-5 ha2520 HA2-2520-2 A2525-5